arXiv subjects

Shisheng Lin

Publications and source records attributed to Shisheng Lin.

At least 19 recordsLinked to original sources

arXiv2026

The boron-hydrogen-phosphorus tri-elements co-doped stable N-type single crystalline Diamond

Diamond is an outstanding semiconductor for extreme electronics, yet reproducible n-type doping remains a long-standing challenge. Here we demonstrate stable n-type single-crystal diamond grown in a single step by a precisely controlled boron-hydrogen-phosphorus co-doping strategy. Hall measurements yield electron concentrations up to 1.0*1019 cm-3 with a resistivity as low as 0.249 ohmic.cm. Secondary-ion mass spectrometry shows that tri-elements doping is the key for achieving n-type conductivity as the electron density exceeds the incorporated phosphorus concentration and is the same level of that of hydrogen and boron concentrations, supporting a donor mechanism beyond an isolated substitutional phosphorus or just boron-hydrogen co-doping. Temperature-dependent photoluminescence (PL) reveals this tri-elements codoping method induces the impurity band, and the donor level is quite shallow around 61.6 meV, consistent with the temperature dependent resistance measurements. Moreover, the co-doped diamond also exhibits strong ultraviolet emission near 270-285 nm, and the internal quantum efficiency is estimated to be 69.4%, while the undoped diamond or only boron doped diamond shows negligible UV emission. These results establish a practical route to low-resistance high luminous n-type diamond and its based chips.

physics.app-ph↗

arXiv2025

Excitonic Insulator and Possible Superfluid Based on Two-Dimensional Diamond

Recent research on excitonic insulator has progressed mainly based on narrow bandgap semiconductor or semimetal. Herein, we realize excitonic insulator based on two-dimensional (2D) wide band gap diamond with transition temperature as high as 220K. The resistance rises dramatically by more than three orders, which can be explained by the Bose-Einstein condensation (BEC) of excitons. While cooling down below transition temperature, the wavelength of the bound excitons caused by boron and nitrogen centers becomes highly overlapped, leading to BEC process. Furthermore, the variable range hopping mechanism is used to simulate the resistance as a function of temperature, which reveals the formation of excitonic insulator. When temperature drops down further, a sudden drop of resistance over three orders was observed around 60K, possibly due to the formation of non-equilibrium excitonic superfluid resulting from highly overlap of wavelength of the large density bound excitons at lower temperature. This study provides evidences for excitonic insulator and possible superfluid phase based on wide bandgap semiconductor.

quant-ph↗

arXiv2025

Water Heterostructure Photodetector for Calculation of Semiconductor Minority Carrier Lifetime

The minority carrier lifetime of semiconductor materials is a crucial performance parameter for optoelectronic devices. However, the existing minority carrier lifetime measurement techniques necessitate delicate optical measurement systems and harmful treatment of the samples, which will definitely cause great constraints on the further development of the semiconductor industry. Here, an off-junction graphene/water/silicon photodetector is realized based on the charming dynamic polarization process of water molecules at the water/silicon and water/graphene interface, which shows a typical responsivity and detectivity of 36.55 mA W-1 and 1.62*1012 Jones respectively under 890 nm illumination with a distance of 0.2 cm away from the junction. This pulse-like photo-response arises from the diffusion and drift current toward the water/silicon interface generated by the illumination on an off-junction spot. Furthermore, by measuring the photo-current at a different distance from the junction combined with an exponential fitting method, the minority carrier lifetime calculation of silicon can be performed with the maximum accuracy rate reaches 98.8%, where water plays the key role of deducing the carrier lifetime. This study provides a straightforward method that paves the way for future minority carrier lifetime tests of semiconductor materials, which hold great potential for developing the nondestructive tests(NDT) in semiconductor industry.

physics.optics↗

arXiv2025

Water evaporation-driven dynamic diode for direct electricity generation

Harnessing energy from ubiquitous water resources via molecular-scale mechanisms remains a critical frontier in sustainable energy research. Herein, we present a novel evaporation-driven power generator based on a dynamic diode architecture that continuously harvests direct current (DC) electricity by leveraging the flipping of the strong built-in electric field (up to 10E10 V/cm) generated by polar molecules such as water to drive directional carrier migration. In our system, water molecules undergo sequential polarization and depolarization at the graphene-water-silicon interface, triggering cycles of charge trapping and release. This nonionic mechanism is driven primarily by the Fermi level difference between graphene and silicon, augmented by the intrinsic dipole moment of water molecules. Structural optimization using graphene enhances evaporation kinetics and interfacial contact, yielding an open-circuit voltage of 0.35 V from a 2 cm * 1 cm device. When four units are connected in series, the system delivers a stable 1.2V output. Unlike ion-mediated energy harvesters, this corrosion-free architecture ensures long-term stability and material compatibility. Our work introduces a fundamentally new approach to water-based power generation, establishing interfacial polarization engineering as a scalable strategy for low-cost, sustainable electricity production from ambient water.

physics.atom-ph↗

arXiv2025

Super high capacity of silicon carbon anode over 6500 mAh g-1 for lithium battery

As silicon is approaching its theoretical limit for the anode materials in lithium battery, searching for a higher limit is indispensable. Herein, we demonstrate the possible of achieving ultrahigh capacity over 6500 mAh g-1 in silicon-carbon composites. Considering the numerous defects inside the silicon nanostructures, it is deduced the formation of quasi-Bose Einstein condensation should be possible, which can lead to the low viscosity flow of lithium-ions through the anode. At a charge-discharge rate of 0.1C (0.42 A g-1), the initial discharge specific capacity reaches 6694.21 mAh g-1, with a Coulomb efficiency (CE) of 74.71%, significantly exceeding the theoretical capacity limit of silicon. Further optimization of the anode material ratio results in improved cycling stability, with a discharge specific capacity of 5542.98 mAh g-1 and a CE of 85.25% at 0.1C. When the initial discharge capacity is 4043.01 mAh g-1, the CE rises to 86.13%. By training a multilayer perceptron with material parameters as inputs and subsequently optimizing it using a constrained genetic algorithm, an initial discharge specific capacity of up to 7789.55 mAh g-1 can be achieved theoretically. This study demonstrates that silicon-carbon composites have great potential to significantly enhance the energy density of lithium-ion batteries.

physics.chem-ph↗

arXiv2025

DeepMath-Creative: A Benchmark for Evaluating Mathematical Creativity of Large Language Models

To advance the mathematical proficiency of large language models (LLMs), the DeepMath team has launched an open-source initiative aimed at developing an open mathematical LLM and systematically evaluating its mathematical creativity. This paper represents the initial contribution of this initiative. While recent developments in mathematical LLMs have predominantly emphasized reasoning skills, as evidenced by benchmarks on elementary to undergraduate-level mathematical tasks, the creative capabilities of these models have received comparatively little attention, and evaluation datasets remain scarce. To address this gap, we propose an evaluation criteria for mathematical creativity and introduce DeepMath-Creative, a novel, high-quality benchmark comprising constructive problems across algebra, geometry, analysis, and other domains. We conduct a systematic evaluation of mainstream LLMs' creative problem-solving abilities using this dataset. Experimental results show that even under lenient scoring criteria -- emphasizing core solution components and disregarding minor inaccuracies, such as small logical gaps, incomplete justifications, or redundant explanations -- the best-performing model, O3 Mini, achieves merely 70% accuracy, primarily on basic undergraduate-level constructive tasks. Performance declines sharply on more complex problems, with models failing to provide substantive strategies for open problems. These findings suggest that, although current LLMs display a degree of constructive proficiency on familiar and lower-difficulty problems, such performance is likely attributable to the recombination of memorized patterns rather than authentic creative insight or novel synthesis.

cs.AI↗

arXiv2024

Possible High temperature Superconductivity above 200K mediated by Bose Einstein Condensation of exciton

Exciton mediated superconductor is a fascinating quantum phase of matter that occurs when excitons become the dominant excitation in materials, which is also very promising for high temperature superconductor. However, there is no experimental report of exciton mediated superconductivity. Herein, we realize exciton mediated superconductivity from exciton insulator, where the onset transition temperature can reach larger than 200 K. More profoundly, Bose-Einstein condensation (BEC) of exciton can facilitate the formation of exciton insulator and a transition happened from extremely high resistivity of 107 {\Omega} at 153.5 K to 100 {\Omega} at 125 K, indicating a superconducting transition. The resistance of exciton mediated superconductivity can not be absolutely reach zero possibly as a result of drag effect between electrons/holes and excitons. We reveal one rule for exciton mediated superconductivity is that the resistivity is an inverse linear function of the current through the BEC superfluid state, which should be ascribed to the Andreev-Bashkin effect, which reflects the coupling between the BEC state of exciton and Cooper pairs mediated by excitons. Furthermore, a record transition temperature above 200 K has been found for one superconducting sample, which shows the Josephson oscillation dominated by a pendulum-like equation caused by the quantum coupling between superconductor and BEC superfluid of exciton.

cond-mat.supr-con↗

arXiv2024

Superconductivity and metallic behavior in heavily doped bulk single crystal diamond and graphene/diamond heterostructure

Owing to extremely large band gap of 5.5 eV and high thermal conductivity, diamond is recognized as the most important semiconductor. The superconductivity of polycrystalline diamond has always been reported, but there are also many controversies over the existence of superconductivity in bulk single crystal diamond and it remains a question whether a metallic state exists for such a large band gap semiconductor. Herein, we realize a single crystal superconducting diamond with a Hall carrier concentration larger than 3*1020 cm-3 by co-doped of boron and nitrogen. Furthermore, we show that diamond can transform from superconducting to metallic state under similar carrier concentration with tuned carrier mobility degrading from 9.10 cm2 V-1 s-1 or 5.30 cm2 V-1 s-1 to 2.66 cm2 V-1 s-1 or 1.34 cm2 V-1 s-1. Through integrating graphene on a nitrogen and boron heavily co-doped diamond, the monolayer graphene can be superconducting through combining Andreev reflection and exciton mediated superconductivity, which may intrigue more interesting superconducting behavior of diamond heterostructure.

cond-mat.supr-con↗

arXiv2024

Liquid water based optoelectronic computing chip

Solid-state electronics have revolutionized modern society due to their exceptional computational capabilities. However, the power consumption of chips rises dramatically with increasing integration levels as post-treatment of individual computing unit cost. Here, we introduce a water computing chip with exceptionally low power consumption based on graphene/water/semiconductor photodetectors, which relies on a unique exponential decay of water molecule polarization transfer function (PTF) along the signal transmission direction. Through a designed Ising model to picture the dynamic polarization and depolarization process of water molecules between graphene and silicon, we illustrate a longitude decay PTF which guarantees low energy consumption for the pulse current output. Furthermore, the lateral decay PTF is verified by the realization of linearly superimposed currents in the diameter of centimeter scale based on 3*3 water photodetector array. The molecular dynamic simulations reveal the timescale of 25 femtosecond (fs) for one flip of single water molecule. Subsequently, the single logical operation only needs an ideal energy consumption up to attojoule (10-18 J). The decay of lateral PTF at the centimeter scale ensures the ability to fabricate water computing chips containing a large number of photodetector arrays under micro/nano fabrication technology, which mimics the numerous neural cells inside hippocampus. As a proof of concept, we show the capability for Multiply-Accumulate (MAC) computations using an 8*8 water computing chip by successfully identifying the ASCII code of ZJU. The water computing chips utilize naturally-sourced water and straightforward manufacturing techniques, which hold great potential in creating a chip similar with human brain.

physics.comp-ph↗

arXiv2023

Mechanical motion tuned carrier transport characteristic of dynamic diode

Since the invention of dynamic diode, its physical properties and potential applications have attracted wide attentions. A lot of attempts have been made to harvest the rebounding current and voltage of dynamic diode. However, the underlying physical mechanism of its carrier transport characteristic was rarely explored carefully. Here, the electrical transport properties of the dynamic diode are systematically investigated with a mechanical motion tuned method, where the dynamic current-voltage curve shows a gentler growth trend compared to the static curve. The rebounding current increases with motion velocity and contact force, resulting in a reduced current with the same bias voltage and an oscillation current with a changing velocity and force. Besides, we propose a circuit model with an accurate mathematical formula expression to describe the oscillation current, where an imaginary parameter n0 is creatively added to the exponential growth term. This work shows a physical picture of adjust microscopic carrier motion with macroscopic mechanical motion, which provides strong theoretical support for designing dynamic diode devices with better performance in the future.

physics.app-ph↗

arXiv2022

Self-driven photo-polarized water molecule triggered graphene-based photodetector

Flowing water can be used as an energy source for generators, providing a major part of the energy for daily life. However, water is rarely used for information or electronic devices. Herein, we present the feasibility of a polarized liquid-triggered photodetector in which polarized water is sandwiched between graphene and semiconductor. Due to the polarization and depolarization processes of water molecular under the driven of photogenerated carriers, a photo-sensitive current can be repeatably produced, resulting in a high-performance photodetector. The response wavelength of the photodetector can be finely tuned as a result of the free choice of semiconductors as there is no requirement of lattice match between graphene and the semiconductors. Under zero voltage bias, the responsivity and specific detectivity of Gr/NaCl (0.5 M)/N-GaN reaches values of 130.7 mA/W and 2.8*10^12 Jones under 350 nm illumination. Meanwhile, using a polar liquid photodetector can successfully read the photoplethysmography signals to produce accurate oxygen blood saturation and heart rate. Compared with the commercial pulse oximetry sensor, the average errors of oxygen saturation and heart rate in the designed photoplethysmography sensor are~1.9% and ~2.1%, respectively. This study transfers the message that water can be used as high-performance photodetector in informative industries.

physics.app-ph↗

arXiv2022

Self-driven water or polarized liquid based ultraviolet photodetector

Traditionally, photodetector is based on solid materials constructed PN junction, which needs many delicate growth technologies. Herein, we demonstrate the feasibility of polarized liquid triggered photodetector where the liquid is sandwiched between P-type or N-type semiconductor which can be chosen freely according to the requirement of the specific response wavelength. Under the multiple cycles of optical switching, transient photo-polarized current, steady state photo-polarized current and depolarized current are repeatably observed in semiconductor/polar liquids/semiconductor structure. The responsivity and specific detectivity of transient photo-polarized current in N-GaN/water/P-GaN reach values of 104.2 mA/W and 4.4*10^12 Jones at 365 nm, and 52.8 mA/W and 1.9*10^12 Jones at 254 nm illumination under zero voltage bias. We anticipate that our research will have a profound impact on integrating self-powered photodetector with freely selectable wavelength bands.

physics.app-ph↗

arXiv2022

Infrared Radiation of Graphene Electrothermal Film Triggered Alpha and Theta Brainwaves

The alpha and theta frequency brainwave activity in Electroencephalogram (EEG) signal has been correlated with attention, inhibitory processes, memory, perceptual abilities, and sleep. The enhanced alpha and theta brainwave activity may bring positive behavioral modifications such as promoting creativity and a quick sleep. Herein, we discover that infrared radiation from multilayer graphene electrothermal film can obviously promote the appearance of alpha and theta brainwave in human mind. In particular, the occurrence frequency of the alpha and theta waves in EEG can be effectively enhanced up to 2.3 and 3.0 times, respectively. And the duration time of the alpha and theta waves in EEG can also be effectively extended. The mechanism may be attributed to the efficient infrared radiation caused by graphene mainly focused on the range from 7 to 14 micron, coinciding with the radiation wavelength of natural human body, which can be effectively absorbed by the human skin and speed up the blood microcirculation and metabolism. The comparative effect of different working temperature and heating materials such as water, Cu and even monolayer graphene are systematically investigated, indicating the infrared radiation from the multilayer graphene electrothermal film at 50 degrees has the largest enhancement effect of alpha and theta brainwaves. The multilayer graphene film electrical heater represents a convenient and surprising way for triggering the alpha and theta brainwaves, which has many potential applications in the area of enlarged health cerements.

physics.app-ph↗

arXiv2020

Wind Driven Semiconductor Electricity Generator With High Direct Current Output Based On a Dynamic Schottky Junction

As the fast development of internet of things (IoTs), distributed sensors have been frequently used and the small and portable power sources are highly demanded. However, the present portable power source such as lithium battery has low capacity and need to be replaced or recharged frequently. A portable power source which can continuously generate electrical power in situ will be an idea solution. Herein, we demonstrate a wind driven semiconductor electricity generator based on a dynamic Schottky junction, which can output a continuous direct current with an average value of 4.4 mA (the maximum value of 8.4 mA) over 360 seconds. Compared with the previous metal/semiconductor generator, the output current is one thousand times higher. Furthermore, this wind driven generator has been explored to function as a turn counter due to its stable output and also to drive a graphene ultraviolet photodetector, which shows a responsivity of 35.8 A/W under the 365 nm ultraviolet light. Our research provides a feasible method to achieve wind power generation and power supply for distributed sensors in the future.

physics.app-ph↗

arXiv2020

Direct-Current Generator Based on Dynamic Water-Semiconductor Junction with Polarized Water as Moving Dielectric Medium

There is a rising prospective in harvesting energy from water droplets, as microscale energy is required for the distributed sensors in the interconnected human society. However, achieving a sustainable direct-current generating device from water flow is rarely reported, and the quantum polarization principle of the water molecular remains uncovered. Herein, we propose a dynamic water-semiconductor junction with moving water sandwiched between two semiconductors as a moving dielectric medium, which outputs a sustainable direct-current voltage of 0.3 V and current of 0.64 uA with low internal resistance of 390 kilohm. The sustainable direct-current electricity is originating from the dynamic water polarization process in water-semiconductor junction, in which water molecules are continuously polarized and depolarized driven by the mechanical force and Fermi level difference, during the movement of the water on silicon. We further demonstrated an encapsulated portable power-generating device with simple structure and continuous direct-current voltage, which exhibits its promising potential application in the field of wearable electronic generators.

physics.app-ph↗

arXiv2020

DC electricity generation from dynamic polarized water-semiconductor interface

Liquid electricity generator and hydrovoltaic technology have received numerous attentions, which can be divided into horizontal movement generator and vertical movement generator. The horizontal movement generator is limited for powering the integrated and miniaturized energy chip as the current output direction is depending on the moving direction of the water droplet, which means a sustainable and continuous direct-current (DC) electricity output can be hardly achieved because of the film of limited length. On the other hand, the existing vertical movement generators include triboelectricity or humidity gradient-based liquid electricity generator, where the liquid or water resource must be sustainably supplied to ensure continuous current output. Herein, we have designed an integratable vertical generator by sandwiching water droplets with semiconductor and metal, such as graphene or aluminum. This generator, named as polarized liquid molecular generator (PLMG), directly converts the lateral kinetic energy of water droplet into vertical DC electricity with an output voltage of up to ~1.0 V from the dynamic water-semiconductor interface. The fundamental discovery of PLMG is related to the non-symmetric structure of liquid molecules, such as water and alcohols, which can be polarized under the guidance of built-in field caused by the Fermi level difference between metal and semiconductor, while the symmetric liquid molecules cannot produce any electricity on the opposite. Integratable PLMG with a large output power of ~90 nW and voltage of ~2.7 V has been demonstrated, meanwhile its small internal resistance of ~250 kilohm takes a huge advantage in resistance matching with the impedance of electron components. The PLMG shows potential application value in the Internet of Things (IoTs) after proper miniaturization and integration.

physics.app-ph↗

arXiv2019

High Performance Direct-Current Generator Based on Dynamic PN Junctions

After the electromagnetic generator, searching for novel electric generators without strong magnetic field is highly demanded. The generator without strong magnetic field calls for a physical picture distinct from the traditional generators. As the counterpart of the static PN junction has been widely used in the integrated circuits, we develop an electric generator named dynamic PN generator with a high current density and voltage output, which converts mechanical energy into electricity by sliding two semiconductors with different Fermi level. A dynamic N-GaAs/SiO2/P-Si generator with the open-circuit voltage of 3.1 V and short-circuit density of 1.0 A/m2 have been achieved. The physical mechanism of the dynamic PN generator is proposed based on the built-in electric field bounding back diffusing carriers in dynamic PN junctions, which breaks the equilibrium between drift and diffusion current in the PN junction. Moreover, the dynamic MoS2/AlN/Si generator with the open-circuit voltage of 5.1 V and short-circuit density of 112 A/m2 (11.2 mA/cm2) have also been achieved, which can effectively output a direct-current and light up a blue light-emitting diode directly. This dynamic MoS2/AlN/Si generator can continuously work for hours without obvious degradation, demonstrating its unique mechanism and potential applications in many fields where the mechanical energy is available.

physics.app-ph↗

arXiv2018

Direct-Current Generator Based on Moving Van der Waals Schottky Diode

Traditionally, Schottky diodes are used statically in the electronic information industry but dynamic state Schottky diodes based applications have been rarely explored. Herein, a novel Schottky diode named moving Schottky diode generator has been designed, which can convert mechanical energy into electrical energy with voltage output as high as 0.6V, by means of lateral movement between graphene/metal film and semiconductor, where the semiconductor can be non-piezoelectric materials. The mechanism is based on the built-in electric field separation of drifting electrons in moving van der Waals Schottky diode. The power output can be further increased in future through optimizing the Schottky diode. The graphene film/silicon moving van der Waals Schottky diode based generator behaves better stability. This direct-current generator has the potential of converting mechanical efficiently and vibrational energy into electricity and enables many promising applications.

physics.app-ph↗