arXiv subjects

Shisheng Lin

Publications and source records attributed to Shisheng Lin.

27 records · Page 2Linked to original sources

arXiv2016

Graphene induced mode bifurcation at low input power

We study analytically the plasmonic modes in the graphene-coated dielectric nanowire, based on the explicit form of nonlinear surface conductivity of graphene. The propagation constants of different plasmonic modes can be tuned by the input power at the order of a few tenths of mW. The lower and upper mode bifurcation branches are connected at the limitation value of the input power. Moreover, due to the nonlinearity of graphene, the dispersion curves of plasmonic modes at different input powers form an energy band, which is in sharp contrast with the single dispersion curve in the limit of zero input power.

physics.optics↗

arXiv2016

Monolayer MoS2/GaAs heterostructure self-driven photodetector with extremely high detectivity

Two dimensional material/semiconductor heterostructures offer alternative platforms for optoelectronic devices other than conventional Schottky and p-n junction devices. Herein, we use MoS2/GaAs heterojunction as a self-driven photodetector with wide response band width from ultraviolet to visible light, which exhibits high sensitivity to the incident light of 635 nm with responsivity as 446 mA/W and detectivity as 5.9*10^13 Jones (Jones = cm Hz1/2 W-1), respectively. Employing interface design by inserting h-BN and photo-induced doping by covering Si quantum dots on the device, the responsivity is increased to 419 mA/W for incident light of 635 nm. Distinctly, attributing to the low dark current of the MoS2/h-BN/GaAs sandwich structure based on the self-driven operation condition, the detectivity shows extremely high value of 1.9*10^14 Jones for incident light of 635 nm, which is higher than all the reported values of the MoS2 based photodetectors. Further investigations reveal that the MoS2/GaAs based photodetectors have response speed with the typical rise/fall time as 17/31 μs. The photodetectors are stable while sealed with polymethyl methacrylate after storage in air for one month. These results imply that monolayer MoS2/GaAs heterojunction may have great potential for practical applications as high performance self-driven photodetectors.

physics.ins-det↗

arXiv2016

Design of Ultra-compact Graphene-based Superscatterers

The energy-momentum dispersion relation is a fundamental property of plasmonic systems. In this paper, we show that the method of dispersion engineering can be used for the design of ultra-compact graphene-based superscatterers. Based on the Bohr model, the dispersion relation of the equivalent planar waveguide is engineered to enhance the scattering cross section of a dielectric cylinder. Bohr conditions with different orders are fulfilled in multiple dispersion curves at the same resonant frequency. Thus the resonance peaks from the first and second order scattering terms are overlapped in the deepsubwavelength scale by delicately tuning the gap thickness between two graphene layers. Using this ultra-compact graphene-based superscatterer, the scattering cross section of the dielectric cylinder can be enhanced by five orders of magnitude.

physics.optics↗

arXiv2015

Atomically thin spherical shell-shaped superscatterers based on Bohr model

Graphene monolayers can be used for atomically thin three-dimensional shell-shaped superscatterer designs. Due to the excitation of the first-order resonance of transverse magnetic (TM) graphene plasmons, the scattering cross section of the bare subwavelength dielectric particle is enhanced significantly by five orders of magnitude. The superscattering phenomenon can be intuitively understood and interpreted with Bohr model. Besides, based on the analysis of Bohr model, it is shown that contrary to the TM case, superscattering is hard to occur by exciting the resonance of transverse electric (TE) graphene plasmons due to their poor field confinements.

physics.optics↗

arXiv2015

Semiconductor quantum dots enhanced graphene/CdTe heterostructure solar cells by photo-induced doping

We report a type of solar cells based on graphene/CdTe Schottky heterostructure, which can be improved by surface engineering as graphene is one-atomic thin. By coating a layer of ultrathin CdSe quantum dots onto graphene/CdTe heterostructure, the power conversion efficiency is increased from 2.08% to 3.1%. Photo-induced doping is mainly accounted for this enhancement, as evidenced by transport, photoluminescence and quantum efficiency measurements. This work demonstrates a feasible way of designing solar cells with incorporating one dimensional and two dimensional materials.

physics.optics↗

arXiv2015

Opening the band gap of graphene through silicon doping for improved performance of graphene/GaAs heterojunction solar cells

Graphene has attracted increasing interests due to its remarkable properties, however, the zero band gap of monolayer graphene might limit its further electronic and optoelectronic applications. Herein, we have successfully synthesized monolayer silicon-doped graphene (SiG) in large area by chemical vapor deposition method. Raman spectroscopy and X-ray photoelectron spectroscopy measurements evidence silicon atoms are doped into graphene lattice with the doping level of 3.4 at%. The electrical measurement based on field effect transistor indicates that the band gap of graphene has been opened by silicon doping, which is around 0. 28 eV supported by the first-principle calculations, and the ultraviolet photoelectron spectroscopy demonstrates the work function of SiG is 0.13 eV larger than that of graphene. Moreover, the SiG/GaAs heterostructure solar cells show an improved power conversion efficiency of 33.7% in average than that of graphene/GaAs solar cells, which are attributed to the increased barrier height and improved interface quality. Our results suggest silicon doping can effectively engineer the band gap of monolayer graphene and SiG has great potential in optoelectronic device applications.

cond-mat.mtrl-sci↗

arXiv2015

High performance solar cells based on graphene-GaAs heterostructures

The honeycomb connection of carbon atoms by covalent bonds in a macroscopic two-dimensional scale leads to fascinating graphene and solar cell based on graphene/silicon Schottky diode has been widely studied. For solar cell applications, GaAs is superior to silicon as it has a direct band gap of 1.42 eV and its electron mobility is six times of that of silicon. However, graphene/GaAs solar cell has been rarely explored. Herein, we report graphene/GaAs solar cells with conversion efficiency (Eta) of 10.4% and 15.5% without and with anti-reflection layer on graphene, respectively. The Eta of 15.5% is higher than the state of art efficiency for graphene/Si system (14.5%). Furthermore, our calculation points out Eta of 25.8% can be reached by reasonably optimizing the open circuit voltage, junction ideality factor, resistance of graphene and metal/graphene contact. This research strongly support graphene/GaAs hetero-structure solar cell have great potential for practical applications.

cond-mat.mes-hall↗

arXiv2013

Electrical Tuning of Surface Plasmon Polariton Propagation in Graphene-Nanowire Hybrid Structure

We demonstrate a dynamic surface plasmonic modulation of graphene-nanowire hybrid structures in visible light range, which was thought to be a tough task for graphene based field effect transistor modulator previously. Static modulation depth of as high as 0.07 dB/μm has been achieved experimentally. Carefully simulation indicates the strongly focused electromagnetic field and dramatically enhanced electric field at the interface between a silver NW and a graphene sheet are key roles for bringing the optical response of the device to the visible range. Furthermore, the modulation behaviors near the Dirac point of monolayer graphene and the singularity of gap-induced bilayer graphene are investigated.

cond-mat.mes-hall↗

arXiv2012

Optical and electronic properties of two dimensional graphitic silicon carbide

Optical and electronic properties of two dimensional few layers graphitic silicon carbide (GSiC), in particular monolayer and bilayer, are investigated by density functional theory and found different from that of graphene and silicene. Monolayer GSiC has direct bandgap while few layers exhibit indirect bandgap. The bandgap of monolayer GSiC can be tuned by an in-plane strain. Properties of bilayer GSiC are extremely sensitive to the interlayer distance. These predictions promise that monolayer GSiC could be a remarkable candidate for novel type of light-emitting diodes utilizing its unique optical properties distinct from graphene, silicene and few layers GSiC.

cond-mat.mes-hall↗