arXiv subjects

Shonali Dhingra

Publications and source records attributed to Shonali Dhingra.

3 recordsLinked to original sources

arXiv2016

Method for Transferring High-Mobility CVD-Grown Graphene with Perfluoropolymers

The transfer of graphene grown by chemical vapor deposition (CVD) using amorphous polymers represents a widely implemented method for graphene-based electronic device fabrication. However, the most commonly used polymer, poly(methyl methacrylate) (PMMA), leaves a residue on the graphene that limits the mobility. Here we report a method for graphene transfer and patterning that employs a perfluoropolymer---Hyflon---as a transfer handle and to protect graphene against contamination from photoresists or other polymers. CVD-grown graphene transferred this way onto LaAlO$_3$/SrTiO$_3$ heterostructures is atomically clean, with high mobility (~30,000 cm$^2$V$^{-1}$s$^{-1}$) near the Dirac point at 2 K and clear, quantized Hall and magneto-resistance. Local control of the LaAlO$_3$/SrTiO$_3$ interfacial metal-insulator transition---through the graphene---is preserved with this transfer method. The use of perfluoropolymers such as Hyflon with CVD-grown graphene and other 2D materials can readily be implemented with other polymers or photoresists.

cond-mat.mtrl-sci↗

arXiv2015

Formation of hexagonal Boron Nitride on Graphene-covered Copper Surfaces

Graphene-covered copper surfaces have been exposed to borazine, (BH)3(NH)3, with the resulting surfaces characterized by low-energy electron microscopy. Although the intent of the experiment was to form hexagonal boron nitride (h-BN) on top of the graphene, such layers were not obtained. Rather, in isolated surface areas, h-BN is found to form micrometer-size islands that substitute for the graphene. Additionally, over nearly the entire surface, the properties of the layer that was originally graphene is observed to change in a manner that is consistent with the formation of a mixed h-BN/graphene alloy, i.e. h-BNC alloy. Furthermore, following the deposition of the borazine, a small fraction of the surface is found to consist of bare copper, indicating etching of the overlying graphene. The inability to form h-BN layers on top of graphene is discussed in terms of the catalytic behavior of the underlying copper surface and the decomposition of the borazine on top of the graphene.

cond-mat.mtrl-sci↗

arXiv2015

Nitrogen vacancy centers in diamond as angle-squared sensors

Nitrogen-vacancy (NV) centers are defects in diamonds, which, due to their electronic structure, have been extensively studied as magnetic field sensors. Such field detection applications usually employ the NV centers to detect field components aligned with the direction of the internally-defined spin axis of the NV center. In this work we detect magnetic fields which are slightly misaligned with the NV center axis. In particular, we demonstrate that the NV center can measure the square of the angle between the magnetic field and the NV center axis with high sensitivity which diverges as the external field approaches a value pre-defined by NV center's internal parameters, in agreement with predictions. These results show that NV centers could be used as sensitive transducers for making quantum nondemolition (QND) measurements on systems such as nanomechanical oscillators.

quant-ph↗