arXiv subjects

Shou-Cheng Zhang

Publications and source records attributed to Shou-Cheng Zhang.

At least 109 records · Page 6Linked to original sources

arXiv2011

Topological superconductivity and Majorana fermions in half-metal / superconductor heterostructure

As a half-metal is spin-polarized at its Fermi level by definition, it was conventionally thought to have little proximity effect to an s-wave superconductor. Here we show that, with interface spin-orbit coupling, $p_x +ip_y$ superconductivity without spin degeneracy is induced on the half-metal, and we give an estimate of its bulk energy gap. Therefore a single-band half-metal can give us a topological superconductor with a single chiral Majorana edge state. Our band calculation shows that two atomic layers of VTe or CrO$_2$ is a single-band half-metal for a wide range ($\sim$0.1eV) of Fermi energy and thus is a suitable candidate material.

cond-mat.supr-con↗

arXiv2011

Topological insulators for high performance terahertz to infrared applications

Topological insulators in the Bi2Se3 family have an energy gap in the bulk and a gapless surface state consisting of a single Dirac cone. Low frequency optical absorption due to the surface state is universally determined by the fine structure constant. When the thickness of these three dimensional topological insulators is reduced, they become quasi-two dimensional insulators with enhanced absorbance. The two dimensional insulators can be topologically trivial or non-trivial depending on the thickness, and we predict that the optical absorption is larger for topological non-trivial case compared with the trivial case. Since the three dimensional topological insulator surface state is intrinsically gapless, we propose its potential application in wide bandwidth, high performance photo-detection covering a broad spectrum ranging from terahertz to infrared. The performance of photodetection can be dramatically enhanced when the thickness is reduced to several quintuple layers, with a widely tunable band gap depending on the thickness.

cond-mat.mtrl-sci↗

arXiv2011

Generalized quantization condition in topological insulator

The topological magnetoelectric effect (TME) is the fundamental quantization effect for topological insulators in units of the fine structure constant $α$. In [Phys. Rev. Lett. 105, 166803(2010)], a topological quantization condition of the TME is given under orthogonal incidence of the optical beam, in which the wave length of the light or the thickness of the TI film must be tuned to some commensurate values. This fine tuning is difficult to realize experimentally. In this article, we give manifestly $SL(2,\mathbb{Z})$ covariant expressions for Kerr and Faraday angles at oblique incidence at a topological insulator thick film. We obtain a generalized quantization condition independent of material details, and propose a more easily realizable optical experiment, in which only the incidence angle is tuned, to directly measure the topological quantization associated with the TME.

cond-mat.str-el↗

arXiv2010

Topological Order Parameters for Interacting Topological Insulators

We propose a topological order parameter for interacting topological insulators, expressed in terms of the full Green's functions of the interacting system. We show that it is exactly quantized for a time reversal invariant topological insulator, and it can be experimentally measured through the topological magneto-electric effect. This topological order parameter can be applied to both interacting and disordered systems, and used for determining their phase diagrams.

cond-mat.str-el↗

arXiv2010

Critical theory of the topological quantum phase transition in a spin-2 chain

We systematically study the phase diagram of S=2 spin chain, by means of density-matrix renormalization group and exact diagonalization methods and confirm the presence of a dimer phase in the AKLT--SZH model. We find that the whole phase boundary between the dimer and SZH phases, including the multicritical point, is a critical line with the same central charge $c=5/2$. Finally, we propose and confirm that this line can be described by the $\rm SO(5)_1$ Wess-Zumino-Witten (WZW) conformal field theory.

cond-mat.str-el↗

arXiv2010

Fractional topological insulators in three dimensions

Topological insulators can be generally defined by a topological field theory with an axion angle theta of 0 or pi. In this work, we introduce the concept of fractional topological insulator defined by a fractional axion angle and show that it can be consistent with time reversal (T) invariance if ground state degeneracies are present. The fractional axion angle can be measured experimentally by the quantized fractional bulk magnetoelectric polarization P_3, and a `halved' fractional quantum Hall effect on the surface with Hall conductance of the form (p/q)(e^2/2h) with p,q odd. In the simplest of these states the electron behaves as a bound state of three fractionally charged `quarks' coupled to a deconfined non-Abelian SU(3) `color' gauge field, where the fractional charge of the quarks changes the quantization condition of P_3 and allows fractional values consistent with T-invariance.

cond-mat.str-el↗

arXiv2010

Electron interaction-driven insulating ground state in Bi2Se3 topological insulators in the two dimensional limit

We report a transport study of ultrathin Bi2Se3 topological insulators with thickness from one quintuple layer to six quintuple layers grown by molecular beam epitaxy. At low temperatures, the film resistance increases logarithmically with decreasing temperature, revealing an insulating ground state. The sharp increase of resistance with magnetic field, however, indicates the existence of weak antilocalization, which should reduce the resistance as temperature decreases. We show that these apparently contradictory behaviors can be understood by considering the electron interaction effect, which plays a crucial role in determining the electronic ground state of topological insulators in the two dimensional limit.

cond-mat.mtrl-sci↗

arXiv2010

Electrically controllable surface magnetism on the surface of topological insulator

We study theoretically the RKKY interaction between magnetic impurities on the surface of three-dimensional topological insulators, mediated by the helical Dirac electrons. Exact analytical expression shows that the RKKY interaction consists of the Heisenberg-like, Ising-like and DM-like terms. It provides us a new way to control surface magnetism electrically. The gap opened by doped magnetic ions can lead to a short-range Bloembergen-Rowland interaction. The competition among the Heisenberg, Ising and DM terms leads to rich spin configurations and anomalous Hall effect on different lattices.

cond-mat.mtrl-sci↗

arXiv2010

Topological quantization in units of the fine structure constant

Fundamental topological phenomena in condensed matter physics are associated with a quantized electromagnetic response in units of fundamental constants. Recently, it has been predicted theoretically that the time-reversal invariant topological insulator in three dimensions exhibits a topological magnetoelectric effect quantized in units of the fine structure constant $α=e^2/\hbar c$. In this work, we propose an optical experiment to directly measure this topological quantization phenomenon, independent of material details. Our proposal also provides a way to measure the half-quantized Hall conductances on the two surfaces of the topological insulator independently of each other.

cond-mat.str-el↗

arXiv2010

Topological Insulators in Ternary Compounds with a Honeycomb Lattice

One of the most exciting subjects in solid state physics is a single layer of graphite which exhibits a variety of unconventional novel properties. The key feature of its electronic structure are linear dispersive bands which cross in a single point at the Fermi energy. This so-called Dirac cone is closely related to the surface states of the recently discovered topological insulators. The ternary compounds, such as LiAuSe and KHgSb with a honeycomb structure of their Au-Se and Hg-Sb layers feature band inversion very similar to HgTe which is a strong precondition for existence of the topological surface states. In contrast to graphene with two Dirac cones at K and K' points, these materials exhibit the surface states formed by only a single Dirac cone at the Γ-point together with the small direct band gap opened by a strong spin-orbit coupling (SOC) in the bulk. These materials are centro-symmetric, therefore, it is possible to determine the parity of their wave functions, and hence, their topological character. Surprisingly, the compound KHgSb with the strong SOC is topologically trivial, whereas LiAuSe is found to be a topological non-trivial insulator.

cond-mat.mtrl-sci↗

arXiv2010

Magnetoconductance of the quantum spin Hall state

We study numerically the edge magnetoconductance of a quantum spin Hall insulator in the presence of quenched nonmagnetic disorder. For a finite magnetic field B and disorder strength W on the order of the bulk gap E_g, the conductance deviates from its quantized value in a manner which appears to be linear in |B| at small B. The observed behavior is in qualitative agreement with the cusp-like features observed in recent magnetotransport measurements on HgTe quantum wells. We propose a dimensional crossover scenario as a function of W, in which for weak disorder W < E_g the edge liquid is analogous to a disordered spinless 1D quantum wire, while for strong disorder W > E_g, the disorder causes frequent virtual transitions to the 2D bulk, where the originally 1D edge electrons can undergo 2D diffusive motion and 2D antilocalization.

cond-mat.mes-hall↗

arXiv2010

Topological Magnetic Insulators with Corundum Structure

Topological insulators are new states of quantum matter in which surface states residing in the bulk insulating gap are protected by time-reversal symmetry. When a proper kind of antiferromagnetic long range order is established in a topological insulator, the system supports axionic excitations. In this paper, we study theoretically the electronic states in a transition metal oxide of corundum structure, in which both spin-orbit interaction and electron-electron interaction play crucial roles. A tight-binding model analysis predicts that materials with this structure can be strong topological insulator. Because of the electron correlation, an antiferromagnetic order may develop, giving rise to a topological magnetic insulator phase with axionic excitations.

cond-mat.mes-hall↗

arXiv2010

Theoretical prediction of topological insulator in ternary rare earth chalcogenides

A new class of three-dimensional topological insulator, ternary rare earth chalcogenides, is theoretically investigated with ab initio calculations. Based on both bulk band structure analysis and the direct calculation of topological surface states, we demonstrate that LaBiTe3 is a topological insulator. La can be substituted by other rare earth elements, which provide candidates for novel topological states such as quantum anomalous Hall insulator, axionic insulator and topological Kondo insulator. Moreover, YBiTe3 and YSbTe3 are found to be normal insulators. They can be used as protecting barrier materials for both LaBiTe3 and Bi2Te3 families of topological insulators for their well matched lattice constants and chemical composition.

cond-mat.mtrl-sci↗

arXiv2010

Topological insulators and superconductors

Topological insulators are new states of quantum matter which can not be adiabatically connected to conventional insulators and semiconductors. They are characterized by a full insulating gap in the bulk and gapless edge or surface states which are protected by time-reversal symmetry. These topological materials have been theoretically predicted and experimentally observed in a variety of systems, including HgTe quantum wells, BiSb alloys, and Bi$_2$Te$_3$ and Bi$_2$Se$_3$ crystals. We review theoretical models, materials properties and experimental results on two-dimensional and three-dimensional topological insulators, and discuss both the topological band theory and the topological field theory. Topological superconductors have a full pairing gap in the bulk and gapless surface states consisting of Majorana fermions. We review the theory of topological superconductors in close analogy to the theory of topological insulators.

cond-mat.mes-hall↗

arXiv2010

Conductance and noise signatures of Majorana backscattering

We propose a conductance measurement to detect the backscattering of chiral Majorana edge states. Because normal and Andreev processes have equal probability for backscattering of a single chiral Majorana edge state, there is qualitative difference from backscattering of a chiral Dirac edge state, giving rise to half-integer Hall conductivity and decoupling of fluctuation in incoming and outgoing modes. The latter can be detected through thermal noise measurement. These experimental signatures of Majorana fermions are robust at finite temperature and do not require the size of the backscattering region to be mesoscopic.

cond-mat.mes-hall↗

arXiv2010

Crossover of Three-Dimensional Topological Insulator of Bi2Se3 to the Two-Dimensional Limit

Bi2Se3 is theoretically predicted1 2and experimentally observed2,3 to be a three dimensional topological insulator. For possible applications, it is important to understand the electronic structure of the planar device. In this work, thickness dependent band structure of molecular beam epitaxy grown ultrathin films of Bi2Se3 is investigated by in situ angle-resolved photoemission spectroscopy. An energy gap is observed for the first time in the topologically protected metallic surface states of bulk Bi2Se3 below the thickness of six quintuple layers, due to the coupling between the surface states from two opposite surfaces of the Bi2Se3 film. The gapped surface states exhibit sizable Rashba-type spin-orbit splitting, due to breaking of structural inversion symmetry induced by SiC substrate. The spin-splitting can be controlled by tuning the potential difference between the two surfaces.

cond-mat.mtrl-sci↗

arXiv2010

Topological insulator Bi2Se3 thin films grown on double-layer graphene by molecular beam epitaxy

Atomically flat thin films of topological insulator Bi2Se3 have been grown on double-layer graphene formed on 6H-SiC(0001) substrate by molecular beam epitaxy. By a combined study of reflection high energy electron diffraction and scanning tunneling microscopy, we identified the Se-rich condition and temperature criterion for layer-by-layer growth of epitaxial Bi2Se3 films. The as-grown films without doping exhibit a low defect density of 1.0\pm 0.2x1011/cm2, and become a bulk insulator at a thickness of 10 quintuple layers, as revealed by in situ angle resolved photoemission spectroscopy measurement.

cond-mat.mes-hall↗

arXiv2010

Topological quantum phase transition in an S=2 spin chain

We construct a model Hamiltonian for S = 2 spin chain, where a variable parameter $α$ is introduced. The edge spin is S = 1 for $α= 0$, and S = 3/2 for $α= 1$. Due to the topological distinction of the edge states, these two phases must be separated by one or several topological quantum phase transitions. We investigate the nature of the quantum phase transition by DMRG calculation, and propose a phase diagram for this model.

cond-mat.str-el↗