arXiv subjects

Shuigang Xu

Publications and source records attributed to Shuigang Xu.

At least 19 recordsLinked to original sources

arXiv2026

Simultaneous nanoscale imaging of local conductivity and chemical potential in a quantum Hall isospin ferromagnet

Quantum Hall isospin ferromagnetism in multilayer graphene offers a versatile playground for exploring flat band correlated physics, driven by the intricate coupling of spin, valley, orbital, and layer degrees of freedom. However, a nanoscale probe capable of simultaneously mapping local conductivity and chemical potential in these exotic phases has yet to be realized. Here, we introduce scanning conductivity and chemical potential microscopy (SCCM), a technique integrating scanning microwave impedance microscopy and Kelvin probe force microscopy. We demonstrate SCCM by probing the quantum Hall states and many-body Landau level energy spectrum in bilayer graphene. Applied to marginally twisted double bilayer graphene, SCCM then reveals a cascade of quantum Hall isospin ferromagnetic states with unexpected re-emergence behaviors. Significantly, experimental many-body Landau level energy spectrum further uncovers the intricate connections of these complex phenomena to inter-subband Landau level crossings and Landau level single-particle wavefunctions. These insights enable the construction of a comprehensive quantum Hall phase diagram. Our results demonstrate SCCM's capability in decoding complex quantum phenomena, establishing it as a versatile nanoscale probe for electron correlation and topology.

cond-mat.mes-hall↗

arXiv2026

Continuous correlated states and dual-flatness in a moir\'e heterostructure

Many-body effects in condensed matter yield novel quantum states when the electronic density of states is enhanced. A vivid example is flat bands, which suppress kinetic energy and let interactions dominate, when they are filled with an integer number of electrons in moire systems. Yet flat bands and commensurate fillings are not the only conditions for correlated phenomena. Situations may occur where the band structure develops locally enhanced density of states, leading to strong correlations even at non-integer fillings, although such cases often yield pseudogaps that make detection elusive. Here we demonstrate that small-angle twisted monolayer-bilayer graphene combines moire-induced global flat band and additional local band flattening. Their coexistence allows direct comparison of correlated effects. The global route stabilizes commensurate states, while the local mechanism produces nearly flat bands, lifting degeneracy and generating symmetry breaking at non-integer fillings, yet without opening a global gap. Because there is no global gapped signature, the system remains metallic, but the effect reveals itself in anomalous Hall responses, signaling time-reversal symmetry breaking and valley polarization. Our results demonstrate dual-flatness as a guiding principle, extending moire physics beyond commensurate fillings and identifying topological transport as a probe of gapless correlated metals.

cond-mat.str-el↗

arXiv2026

Spin-orbit-driven quarter semimetals in rhombohedral graphene

Semimetals exhibit intriguing characteristics attributed to the coexistence of both electrons and holes. In rhombohedral multilayer graphene, a strong trigonal warping effect gives rise to a semi-metallic state near the Fermi surface, offering unique opportunities to explore the interplay of semi-metallic properties with strong correlations and topologies. Here, the observation of quarter semimetals in rhombohedral multilayer graphene by introducing spin-orbit coupling (SOC) is reported. The semi-metallic characteristics of rhombohedral graphene manifest as nearly vanished Hall resistance and parabolic longitudinal resistance. The strong correlations arising from the surface flat band lead to spontaneous symmetry breaking. SOC proximitized by WSe2 further lifts the valley degeneracy, resulting in the spontaneous time-reversal symmetry breaking, as evidenced by the hysteretic anomalous Hall effect. The coexistence of fully polarized electrons and holes allows for the observation of a non-monotonic temperature dependence of the anomalous Hall resistance. Furthermore, the application of moderate magnetic fields induces a phase transition from quarter semimetals to Chern insulators. These findings establish rhombohedral multilayer graphene as an ideal platform for studying strong correlations and topologies in semimetals.

cond-mat.mes-hall↗

arXiv2026

Layer-engineered quantum anomalous Hall effect in twisted rhombohedral graphene

Realizing programmable topological states in quantum anomalous Hall (QAH) insulators requires the ability to design and dynamically tune their topological invariant, the Chern number C. Here, we report a designer QAH platform based on twisted rhombohedral graphene family, in which C becomes a programmable and electrically tunable degree of freedom. By engineering the layer configuration in twisted monolayer-rhombohedral N-layer graphene, denoted as (1+N)L, we realize QAH states with C=N at moire filling v=1, where the layer number N=3,4,5 directly sets the Chern number. Beyond such static layer programming, we demonstrate in-situ electrical control. In a twisted monolayer-trilayer device, the sign of C (chirality) can be switched by electrostatic doping or displacement field. Most strikingly, in twisted Bernal bilayer-rhombohedral tetralayer graphene denoted as (2+4)L, we drive a displacement-field-induced topological phase transition between two distinct QAH states with C=3 and C=4 in a single device. Our work establishes a layer-engineered and electrically tunable platform that transitions topological quantum matter from discovery to design, opening the way toward on-demand engineering of correlated topological states and reconfigurable topological electronics.

cond-mat.mes-hall↗

arXiv2025

Heavy fermion phase diagram in magic-angle twisted trilayer graphene

The interplay between localized magnetic moments and itinerant electrons gives rise to exotic quantum states in condensed matter systems. Here, we demonstrate an electrically tunable heavy fermion phase diagram in magic-angle twisted trilayer graphene, achieved by controlling the Kondo hybridization between localized flat-band electrons and itinerant Dirac electrons via a displacement field. Our results reveal a continuous quantum phase transition from an antiferromagnetic semimetal to a paramagnetic heavy fermion metal. At quantum critical point, we observe effective mass divergence and Fermi surface reconstruction. This highly tunable platform offers unprecedented control over heavy fermion physics, establishing moire heterostructures as a versatile arena for exploring correlated quantum phases-including potential unconventional superconductivity-in two-dimensional limit.

cond-mat.mes-hall↗

arXiv2025

Diverse high-Chern-number quantum anomalous Hall insulators in twisted rhombohedral graphene

Quantum anomalous Hall (QAH) insulators with high Chern number (C) enables multiple dissipationless edge channels for low-power-consumption electronics. We report the realization of multiple high-C QAH insulators including C=3,5,6, and 7 in twisted monolayer-rhombohedral pentalayer graphene. In twist angles of approximately 1.40°, we observe QAH effect with C=5 at a filling of one electron per moiré unit cell, persisting up to 2 Kelvin. Furthermore, incommensurate QAH insulators with C=5,6, and 7 emerge at partial fillings. In twist angles of 0.89°, Chern insulators with C=3 and C=6 appear at fillings of two and three electrons, respectively. Our findings establish twisted rhombohedral multilayer graphene as a highly tunable platform for multichannel, dissipationless electronics and for the exploration of exotic quantum Hall states beyond traditional Landau level paradigm.

cond-mat.mes-hall↗

arXiv2025

Stacking-induced ferroelectricity in tetralayer graphene

Recent studies have reported emergent ferroelectric behavior in twisted or moiré-engineered graphene-based van der Waals heterostructures, yet the microscopic origin of this effect remains under debate. Pristine mono- or few-layer graphene lacks a permanent dipole due to its centrosymmetric lattice, making the emergence of ferroelectricity unlikely. However, mixed-stacked graphene, such as the ABCB tetralayer configuration, breaks both inversion and mirror symmetry and has been theoretically predicted to support electrically switchable dipoles. ABCB graphene represents the simplest natural graphene polytype exhibiting intrinsic out-of-plane polarization, arising from asymmetric charge carrier distribution across its layers. Here, we report robust ferroelectric behavior in dual-gated, non-aligned ABCB tetralayer graphene encapsulated in hexagonal boron nitride. The device exhibits pronounced hysteresis in resistance under both top and bottom gate modulation, with the effect persisting up to room temperature. This hysteresis originates from reversible layer-polarized charge reordering, driven by gate-induced transitions between ABCB and BCBA stacking configurations -- without requiring moiré superlattices. Our findings establish stacking-order-induced symmetry breaking as a fundamental route to electronic ferroelectricity in graphene and open pathways for non-volatile memory applications based on naturally occurring mixed-stacked multilayer graphene.

cond-mat.mes-hall↗

arXiv2025

Continuously tunable anomalous Hall crystals in rhombohedral heptalayer graphene

The interplay of electronic interactions and nontrivial topology can give rise to a wealth of exotic quantum states. A notable example is the formation of Wigner crystals driven by strong electron-electron interactions. When these electronic crystals emerge in a parent band carrying a large Berry curvature, they can exhibit topologically nontrivial properties as anomalous Hall crystals, spontaneously breaking both continuous translational symmetry and time-reversal symmetry. Here, we report the experimental observation of tunable anomalous Hall crystals in rhombohedral heptalayer graphene moiré superlattices. At filling factors near one electron per moiré unit cell (v=1), we identify a series of incommensurate Chern insulators with a Chern number of C=1. Furthermore, we observe spontaneous time-reversal symmetry breaking spanning the entire filling range from v=1 to v=2, manifesting as anomalous Hall effects with pronounced magnetic hysteresis. Notably, anomalous Hall crystals with a high Chern number C=3 are observed over generic fillings ranging from v=1.5 to v=2. These anomalous Hall crystals are incommensurate with the moiré superlattice and exhibit dispersive fan diagrams consistent with the Streda formula, with their positions continuously tunable through displacement fields. Remarkably, these partially filled Chern insulators display Chern numbers distinct from their parent bands. Our findings demonstrate the rich variety of electronic crystalline states in rhombohedral graphene moiré superlattices, offering valuable insights into the strongly correlated topological phases.

cond-mat.mes-hall↗

arXiv2025

Electric-field switchable chirality in rhombohedral graphene Chern insulators stabilized by tungsten diselenide

Chern insulators host topologically protected chiral edge currents with quantized conductance characterized by their Chern number. Switching the chirality of a Chern insulator, namely, the direction of the edge current, is highly challenging due to topologically forbidden backscattering but is of considerable importance for the design of topological devices. Nevertheless, this can be achieved by reversing the sign of the Chern number through a topological phase transition. Here, we report electrically switchable chirality in rhombohedral multilayer graphene-based Chern insulators. By introducing moire superlattices in rhombohedral heptalayer graphene, we observed a cascade of topological phase transitions at quarter electron filling of a moire band with the Chern number tunable from -1, 1 to 2. Furthermore, integrating monolayer tungsten diselenide at the moireless interface of rhombohedral decalayer graphene/h-BN superlattices stabilizes the Chern insulators, enabling quantized anomalous Hall resistance of h/2e^2. Remarkably, the Chern number can be switched from -1 to 2 using displacement fields. Our work establishes rhombohedral multilayer graphene moire superlattices as a versatile platform for topological engineering, with switchable chirality offering significant promise for integrating chiral edge currents into topological electronic circuits.

cond-mat.mes-hall↗

arXiv2024

Coulomb screening of superconductivity in magic-angle twisted bilayer graphene

The origin of superconductivity in magic-angle twisted bilayer graphene has been a subject of intense debate. While some experimental evidence indicated an unconventional pairing mechanism, efforts to tune the critical temperature by screening the Coulomb interactions have been unsuccessful, possibly indicating a conventional phonon-mediated pairing. Here we study a double-layer electronic system consisting of two twisted graphene bilayers in immediate proximity of each other but remaining electronically decoupled. By increasing the carrier density in one bilayer, we completely suppressed both the superconductivity and the correlated-insulator state in the adjacent magic-angle graphene. The observation of such a screening effect offers strong support for an unconventional mechanism of Cooper pairing in magic-angle twisted bilayer graphene, shedding new light on the underlying physics governing their properties.

cond-mat.mes-hall↗

arXiv2024

Phase engineering of giant second harmonic generation in Bi$_2$O$_2$Se

Two-dimensional (2D) materials with remarkable second-harmonic generation (SHG) hold promise for future on-chip nonlinear optics. Relevant materials with both giant SHG response and environmental stability are long-sought targets. Here, we demonstrate the enormous SHG from the phase engineering of a high-performance semiconductor, Bi$_2$O$_2$Se (BOS), under uniaxial strain. SHG signals captured in strained 20 nm-BOS films exceed those of NbOI$_2$ and NbOCl$_2$ of similar thickness by a factor of 10, and are four orders of magnitude higher than monolayer-MoS$_2$, resulting in a significant second-order nonlinear susceptibility on the order of 1 nm V$^{-1}$. Intriguingly, the strain enables continuous adjustment of the ferroelectric phase transition across room temperature. Consequently, an exceptionally large tunability of SHG, approximately six orders of magnitude, is achieved through strain or thermal modulation. This colossal SHG, originating from the geometric phase of Bloch wave functions and coupled with sensitive tunability through multiple approaches in this air-stable 2D semiconductor, opens new possibilities for designing chip-scale, switchable nonlinear optical devices.

cond-mat.mtrl-sci↗

arXiv2024

Engineering band structures of two-dimensional materials with remote moire ferroelectricity

The stacking order and twist angle provide abundant opportunities for engineering band structures of two-dimensional materials, including the formation of moire bands, flat bands, and topologically nontrivial bands. The inversion symmetry breaking in rhombohedral-stacked transitional metal dichalcogenides (TMDCs) endows them with an interfacial ferroelectricity associated with an out-of-plane electric polarization. By utilizing twist angle as a knob to construct rhombohedral-stacked TMDCs, antiferroelectric domain networks with alternating out-of-plane polarization can be generated. Here, we demonstrate that such spatially periodic ferroelectric polarizations in parallel-stacked twisted WSe2 can imprint their moire potential onto a remote bilayer graphene. This remote moire potential gives rise to pronounced satellite resistance peaks besides the charge-neutrality point in graphene, which are tunable by the twist angle of WSe2. Our observations of ferroelectric hysteresis at finite displacement fields suggest the moire is delivered by a long-range electrostatic potential. The constructed superlattices by moire ferroelectricity represent a highly flexible approach, as they involve the separation of the moire construction layer from the electronic transport layer. This remote moire is identified as a weak potential and can coexist with conventional moire. Our results offer a comprehensive strategy for engineering band structures and properties of two-dimensional materials by utilizing moire ferroelectricity.

cond-mat.mtrl-sci↗

arXiv2024

Electronic ferroelectricity in monolayer graphene for multifunctional neuromorphic electronics

Ferroelectricity is intriguing for its spontaneous electric polarization, which is switchable by an external electric field. Expanding ferroelectric materials to two-dimensional limit will provide versatile applications for the development of next-generation nonvolatile devices. Conventional ferroelectricity requires the materials consisting of at least two constituent elements associated with polar crystalline structures. Monolayer graphene as an elementary two-dimensional material unlikely exhibits ferroelectric order due to its highly centrosymmetric hexagonal lattices. Nevertheless, two-dimensional moire superlattices offer a powerful way to engineer diverse electronic orders in non-polar materials. Here, we report the observations of electronic ferroelectricity in monolayer graphene by introducing asymmetric moire superlattice at the graphene/h-BN interface. Utilizing Hall measurements, the electric polarization is identified to stem from electron-hole dipoles, suggesting the electronic dynamics of the observed ferroelectricity. Standard polarization-electric field hysteresis loops, as well as unconventional multiple switchable polarization states, have been achieved. By in-situ comparing with control devices, we found that the electronic ferroelectricity in graphene moire systems is independent of layer number of graphene and the corresponding fine band structures. Furthermore, we demonstrate the applications of this ferroelectric moire structures in multi-state non-volatile data storage and the emulation of versatile synaptic behaviors, including short-term plasticity, long-term potentiation and long-term depression. This work not only enriches the fundamental understanding of ferroelectricity, but also demonstrates the promising applications of graphene in multi-state memories and neuromorphic computing.

cond-mat.mes-hall↗

arXiv2023

Inversion symmetry-broken tetralayer graphene probed by second harmonic generation

Symmetry breaking governs most fascinating phenomena in crystals, such as ferroelectricity, nonlinear optics, piezoelectricity, ferromagnetism, and superconductivity. In two-dimensional materials, a wide variety of tuning knobs presents extraordinary opportunities for engineering symmetry breaking, leading to the emergence and manipulation of novel physical properties. Recently, tetralayer graphene with ABCB stacking order is predicted to possess atypical elemental ferroelectricity arising from the symmetry breaking induced by its specific stacking configuration. Experimentally unveiling the stacking-order dependent symmetry in tetralayer graphene is crucial to understand the intricate properties in the emergent graphene allotropes. Here, we observe pronounced nonlinear optical second harmonic generation (SHG) in ABCB-stacked tetralayer graphene, but absent in both ABAB- and ABCA-stacked allotropes. Our results provide direct evidence of symmetry breaking in ABCB-stacked tetralayer graphene. The remarkable contrast in the SHG spectra of tetralayer graphene allows straightforward identification of ABCB domains from the other two kinds of stacking order and facilitates the characterization of their crystalline orientation. The employed SHG technique serves as a convenient tool for exploring the intriguing physics and novel nonlinear optics in ABCB-stacked graphene, where spontaneous polarization and intrinsic gapped flat bands coexist. Our results establish ABCB-stacked graphene as a unique platform for studying the rare ferroelectricity in non-centrosymmetric elemental structures.

cond-mat.mes-hall↗

arXiv2023

Surface ferromagnetism in rhombohedral heptalayer graphene moire superlattice

The topological electronic structure of crystalline materials often gives rise to intriguing surface states, such as Dirac surface states in topological insulators, Fermi arc surface states in Dirac semimetals, and topological superconductivity in iron-based superconductors. Recently, rhombohedral multilayer graphene has emerged as a promising platform for exploring exotic surface states due to its hosting of topologically protected surface flat bands at low energy, with the layer-dependent energy dispersion. These flat bands can promote electron correlations, leading to a plethora of quantum phenomena, including spontaneous symmetry breaking, superconductivity, ferromagnetism, and topological Chern insulators. Nevertheless, the intricate connection between the surface flat bands in rhombohedral multilayer graphene and the highly dispersive high-energy bands hinders the exploration of correlated surface states. Here, we present a method to isolate the surface flat bands of rhombohedral heptalayer (7L) graphene by introducing moire superlattices. The pronounced screening effects observed in the moire potential-modulated rhombohedral 7L graphene indicate its essential three-dimensional (3D) nature. The isolated surface flat bands favor correlated states on the surface in the regions away from charge-neutrality points. Most notably, we observe tunable surface ferromagnetism, manifested as an anomalous Hall effect with hysteresis loops, which is achieved by polarizing surface states using finite displacement fields. Our work establishes rhombohedral multilayer graphene moire superlattice as a unique 3D system for exploring correlated surface states.

cond-mat.mes-hall↗

arXiv2022

Mixing of surface and bulk electronic states at a graphite-hexagonal boron nitride interface

Van der Waals assembly enables exquisite design of electronic states in two-dimensional (2D) materials, often by superimposing a long-wavelength periodic potential on a crystal lattice using moiré superlattices. Here we show that electronic states in three-dimensional (3D) crystals such as graphite can also be tuned by the superlattice potential arising at the interface with another crystal, namely, crystallographically aligned hexagonal boron nitride. Such alignment is found to result in a multitude of Lifshitz transitions and Brown-Zak oscillations for near-surface 2D states whereas, in high magnetic fields, fractal states of Hofstadter's butterfly extend deep into graphite's bulk. Our work shows a venue to control 3D spectra by using the approach of 2D twistronics.

cond-mat.mes-hall↗

arXiv2022

Out-of-equilibrium criticalities in graphene superlattices

In thermodynamic equilibrium, current in metallic systems is carried by electronic states near the Fermi energy whereas the filled bands underneath contribute little to conduction. Here we describe a very different regime in which carrier distribution in graphene and its superlattices is shifted so far from equilibrium that the filled bands start playing an essential role, leading to a critical-current behavior. The criticalities develop upon the velocity of electron flow reaching the Fermi velocity. Key signatures of the out-of-equilibrium state are current-voltage characteristics resembling those of superconductors, sharp peaks in differential resistance, sign reversal of the Hall effect, and a marked anomaly caused by the Schwinger-like production of hot electron-hole plasma. The observed behavior is expected to be common for all graphene-based superlattices.

cond-mat.other↗

arXiv2021

Interfacial ferroelectricity in marginally twisted 2D semiconductors

Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of novel metamaterials. Here we demonstrate a room-temperature ferroelectric semiconductor that is assembled using mono- or few- layer MoS2. These van der Waals heterostructures feature broken inversion symmetry, which, together with the asymmetry of atomic arrangement at the interface of two 2D crystals, enables ferroelectric domains with alternating out-of-plane polarisation arranged into a twist-controlled network. The latter can be moved by applying out-of-plane electrical fields, as visualized in situ using channelling contrast electron microscopy. The interfacial charge transfer for the observed ferroelectric domains is quantified using Kelvin probe force microscopy and agrees well with theoretical calculations. The movement of domain walls and their bending rigidity also agrees well with our modelling results. Furthermore, we demonstrate proof-of-principle field-effect transistors, where the channel resistance exhibits a pronounced hysteresis governed by pinning of ferroelectric domain walls. Our results show a potential venue towards room temperature electronic and optoelectronic semiconductor devices with built-in ferroelectric memory functions.

cond-mat.mes-hall↗