arXiv subjects

Silvana Botti

Publications and source records attributed to Silvana Botti.

At least 55 records · Page 3Linked to original sources

arXiv2021

Giant optical oscillator strengths in perturbed hexagonal germanium

We present ab initio calculations of electronic and optical properties of perturbed hexagonal germanium and demonstrate that it is a superior material for active optoelectronic devices in the infrared spectral region. It is known that perfect lonsdaleite Ge is a pseudodirect semiconductor, i.e., with direct fundamental band gap but almost vanishing oscillator strength for the lowest-energy optical transitions. Perturbing the system by replacing a Ge atom in the unit cell with a Si atom boosts of the oscillator strength at the minimum direct gap by orders of magnitude, with a concurrent blue shift of the interband distances. This effect is mainly due to the increased s character of the lowest conduction band because of the perturbation-induced wave function mixing. A purely structural modification of the lonsdaleite unit cell of hexagonal Ge yields as well increased optical oscillator strengths, but their magnitude significantly depends on the actual details of the atomic geometry. In particular, moderate tensile uniaxial strain can induce an inversion of the order of the two lowest conduction bands, immediately leading to an extremely efficient enhancement of optical transitions. In general, chemical and/or structural perturbations of the lonsdaleite lattice are shown to be the key to make hexagonal germanium suitable for light emitting devices.

cond-mat.mtrl-sci↗

arXiv2021

Electronic Structure and Epitaxy of CdTe Shells on InSb Nanowires

Indium antimonide (InSb) nanowires are used as building blocks for quantum devices because of their unique properties, i.e., strong spin-orbit interaction and large Landé g-factor. Integrating InSb nanowires with other materials could potentially unfold novel devices with distinctive functionality. A prominent example is the combination of InSb nanowires with superconductors for the emerging topological particles research. Here, we combine the II-VI cadmium telluride (CdTe) with the III-V InSb in the form of core-shell (InSb-CdTe) nanowires and explore potential applications based on the electronic structure of the InSb-CdTe interface and the epitaxy of CdTe on the InSb nanowires. We determine the electronic structure of the InSb-CdTe interface using density functional theory and extract a type-I band alignment with a small conduction band offset ($\leq$ 0.3 eV). These results indicate the potential application of these shells for surface passivation or as tunnel barriers in combination with superconductors. In terms of the structural quality of these shells, we demonstrate that the lattice-matched CdTe can be grown epitaxially on the InSb nanowires without interfacial strain or defects. These epitaxial shells do not introduce disorder to the InSb nanowires as indicated by the comparable field-effect mobility we measure for both uncapped and CdTe-capped nanowires.

cond-mat.mtrl-sci↗

arXiv2021

Machine-learning correction to density-functional crystal structure optimization

Density functional theory is routinely applied to predict crystal structures. The most common exchange-correlation functionals used to this end are the Perdew-Burke-Ernzerhof (PBE) approximation and its variant PBEsol. We investigate the performance of these functionals for the prediction of lattice parameters and show how to enhance their accuracy using machine learning. Our dataset is constituted by experimental crystal structures of the Inorganic Crystal Structure Database matched with PBE-optmized structures stored in the materials project database. We complement these data with PBEsol calculations. We demonstrate that the accuracy and precision of PBE/PBEsol volume predictions can be noticeably improved a posteriori by employing simple, explainable machine learning models. These models can improve PBE unit cell volumes to match the accuracy of PBEsol calculations, and reduce the error of the latter with respect to experiment by 35%. Further, the error of PBE lattice constants is reduced by a factor of 3--5. A further benefit of our approach is the implicit correction of finite temperature effects without performing phonon calculations.

cond-mat.mtrl-sci↗

arXiv2021

From pseudo-direct hexagonal germanium to direct silicon-germanium alloys

We present ab initio calculations of the electronic and optical properties of hexagonal SiGe alloys in the lonsdaleite structure. Lattice constants and electronic band structures in excellent agreement with experiment are obtained using density-functional theory. Hexagonal Si has an indirect band gap, while hexagonal Ge has a pseudo-direct gap, i.e. the optical transitions at the minimum direct band gap are very weak. The pseudo-direct character of pure hexagonal Ge is efficiently lifted by alloying. Already for a small admixture of Si, symmetry reduction enhances the oscillator strength of the lowest direct optical transitions. The band gap is direct for a Si content below 45 %. We validate lonsdaleite group-IV alloys to be efficient optical emitters, suitable for integrated optoelectronic applications.

cond-mat.mtrl-sci↗

arXiv2021

Efficient strain-induced light emission in lonsdaleite germanium

Lonsdaleite germanium has a direct band gap, but it is not an efficient light emitter due to the vanishing oscillator strength of electronic transitions at the fundamental gap. Transitions involving the second lowest conduction band are instead at least three orders of magnitude stronger. The inversion of the two lowest conduction bands would therefore make hexagonal germanium ideal for optoelectronic applications. In this work, we investigate the possibility to achieve this band inversion by applying strain. To this end we perform ab initio calculations of the electronic band structure and optical properties of strained hexagonal germanium, using density functional theory with the modified Becke-Johnson exchange-correlation functional and including spin-orbit interaction. We consider hydrostatic pressure, uniaxial strain along the hexagonal c axis, as well as biaxial strain in planes perpendicular to and containing the hexagonal c axis to simulate the effect of a substrate. We find that the conduction-band inversion, and therefore the transition from a pseudo-direct to a direct band gap, is attainable for moderate tensile uniaxial strain parallel to the lonsdaleite c axis.

cond-mat.mtrl-sci↗

arXiv2020

Absorption mechanism of dopamine/DOPAC modified TiO 2 nanoparticles by time-dependent density functional theory calculations

Donor-modified TiO 2 nanoparticles are interesting hybrid systems shifting the absorption edge of this semiconductor from the ultra-violet to the visible or infrared light spectrum, which is a benefit for several applications ranging from photochemistry, photocatalysis, photovoltaics, or photodynamic therapy. Here, we investigate the absorption properties of two catechol-like molecules, i.e. dopamine and DOPAC ligands, when anchored to a spherical anatase TiO 2 nanoparticle of realistic size (2.2 nm), by means of time-dependent density functional theory calculations. By the differential absorbance spectra with the bare nanoparticle, we show how it is possible to determine the injection mechanism. Since new low-energy absorption peaks are observed, we infer a direct charge transfer injection, which, unexpectedly, does not involve the lowest energy conduction band states. We also find that the more perpendicular the molecular benzene ring is to the surface, the more intense is the absorption, which suggests aiming at high molecular packing in the synthesis. Through a comparative investigation with a flat TiO 2 surface model, we unravel both the curvature and coverage effects.

cond-mat.mtrl-sci↗

arXiv2020

Stable ordered phases of cuprous iodide with complexes of copper vacancies

We perform an exhaustive theoretical study of the phase diagram of Cu-I binaries, focusing on Cu-poor compositions, relevant for p-type transparent conduction. We find that the interaction between neighboring Cu vacancies is the determining factor that stabilizes non-stoichiometric zincblende phases. This interaction leads to defect complexes where Cu vacancies align preferentially along the [100] crystallographic direction. It turns out that these defect complexes have an important influence on hole conductivity, as they lead to dispersive conducting $p$-states that extend up to around 0.8 eV above the Fermi level. We furthermore observe a characteristic peak in the density of electronic states, which could provide an experimental signature for this type of defect complexes.

cond-mat.mtrl-sci↗

arXiv2020

Iodine molecule modifications with high pressure

Metallization and dissociation are key transformations in diatomic molecules at high densities particularly significant for modeling giant planets. Using X-ray absorption spectroscopy and atomistic modeling, we demonstrate that in halogens, the formation of a \textit{connected} molecular structure takes place at pressures well below metallization. Here we show that the iodine diatomic molecule first elongates of $\sim$0.007 Å~up to a critical pressure of $P_c$ $\backsim$7~GPa developing bonds between molecules. Then its length continuously decreases with pressure up to 15-20~GPa. Universal trends in halogens are shown and allow to predict for chlorine a pressure of 42$\pm$8~GPa for molecular bond-length reversal. Our findings tackle the molecule invariability paradigm in diatomic molecular phases at high pressures and may be generalized to other abundant diatomic molecules in the universe, including hydrogen.

physics.chem-ph↗

arXiv2020

First-principles identification of single photon emitters based on carbon clusters in hexagonal boron nitride

A recent study associate carbon with single photon emitters (SPEs) in hexagonal boron nitride (h-BN). This observation, together with the high mobility of carbon in h-BN suggest the existence of SPEs based on carbon clusters. Here, by means of density-functional theory calculations we studied clusters of substitutional carbon atoms up to tetramers in hexagonal boron nitride. Two different conformations of neutral carbon trimers have zero-point line energies and shifts of the phonon sideband compatible with typical photoluminescence spectra. Moreover, some conformations of two small C clusters next to each other result in photoluminescence spectra similar to those found in experiments. We also showed that vacancies are unable to reproduce the typical features of the phonon sideband observed in most measurements due to the large spectral weight of low-energy breathing modes, ubiquitous in such defects.

cond-mat.mtrl-sci↗

arXiv2020

Accurate electronic band gaps of two-dimensional materials from the local modified Becke-Johnson potential

The electronic band structures of two-dimensional materials are significantly different from those of their bulk counterparts, due to quantum confinement and strong modifications of electronic screening. An accurate determination of electronic states is a prerequisite to design electronic or optoelectronic applications of two-dimensional materials, however, most of the theoretical methods we have available to compute band gaps are either inaccurate, computationally expensive, or only applicable to bulk systems. Here we show that reliable band structures of nanostructured systems can now be efficiently calculated using density-functional theory with the local modified Becke-Johnson exchange-correlation functional that we recently proposed. After re-optimizing the parameters of this functional specifically for two-dimensional materials, we show, for a test set of almost 300 systems, that the obtained band gaps are of comparable quality as those obtained using the best hybrid functionals, but at a very reduced computational cost. These results open the way for accurate high-throughput studies of band-structures of two-dimensional materials and for the study of van der Waals heterostructures with large unit cells.

cond-mat.mes-hall↗

arXiv2020

Validation of pseudopotential calculations for the electronic band gap of solids

Nowadays pseudopotential density-functional theory calculations constitute the standard approach to tackle solid-state electronic problems. These rely on distributed pseudopotential tables that were built from all-electron atomic calculations using few popular semi-local exchange-correlation functionals, while pseudopotentials based on more modern functionals, like meta-GGA and hybrid functionals, or for many-body methods, such as $GW$, are often not available. Because of this, employing pseudopotentials created with inconsistent exchange-correlation functionals has become a common practice. Our aim is to quantify systematically the error in the determination of the electronic band gap when cross-functional pseudopotential calculations are performed. To this end we compare band gaps obtained with norm-conserving pseudopotentials or the projector-augmented wave method with all-electron calculations for a large dataset of 473 solids. We focus in particular on density functionals that were designed specifically for band-gap calculations. On average, the absolute error is about 0.1 eV, yielding absolute relative errors in the 5-10\% range. Considering that typical errors stemming from the choice of the functional are usually larger, we conclude that the effect of choosing an inconsistent pseudopotential is rather harmless for most applications. However, we find specific cases where absolute errors can be larger than 1 eV, or others where relative errors can amount to a large fraction of the band gap.

physics.comp-ph↗

arXiv2020

Local modified Becke-Johnson exchange-correlation potential for interfaces, surfaces, and two-dimensional materials

The modified Becke-Johnson meta-GGA potential of density functional theory has been shown to be the best exchange-correlation potential to determine band gaps of crystalline solids. However, it cannot be consistently used for the electronic structure of non-periodic or nanostructured systems. We propose an extension of this potential that enables its use to study heterogeneous, finite and low-dimensional systems. This is achieved by using a coordinate-dependent expression for the parameter $c$ that weights the Becke-Russel exchange, in contrast to the original global formulation, where $c$ is just a fitted number. Our potential takes advantage of the excellent description of band gaps provided by the modified Becke-Johnson potential and preserves its modest computational effort. Furthermore, it yields with one single calculation band diagrams and band offsets of heterostructures and surfaces. We exemplify the usefulness and efficiency of our local meta-GGA potential by testing it for a series of interfaces (Si/SiO$_2$, AlAs/GaAs, AlP/GaP, and GaP/Si), a Si surface, and boron nitride monolayer.

cond-mat.mes-hall↗

arXiv2019

On the calculation of the bandgap of periodic solids with MGGA functionals using the total energy

During the last few years, it has become more and more clear that functionals of the meta generalized gradient approximation (MGGA) are more accurate than GGA functionals for the geometry and energetics of electronic systems. However, MGGA functionals are also potentially more interesting for the electronic structure, in particular when the potential is non-multiplicative (i.e., when MGGAs are implemented in the generalized Kohn-Sham framework), which may help to get more accurate bandgaps. Here, we show that the calculation of bandgap of solids with MGGA functionals can be done very accurately also in a non-self-consistent manner. This scheme uses only the total energy and can, therefore, be very useful when the self-consistent implementation of a particular MGGA functional is not available. Since self-consistent MGGA calculations may be difficult to converge, the non-self-consistent scheme may also help to speed-up the calculations. Furthermore, it can be applied to any other types of functionals, for which the implementation of the corresponding potential is not trivial.

cond-mat.mtrl-sci↗

arXiv2018

Accurate electronic and optical properties of hexagonal germanium for optoelectronic applications

High-quality defect-free lonsdaleite Si and Ge can now be grown on hexagonal nanowire substrates. These hexagonal phases of group-IV semiconductors have been predicted to exhibit improved electronic and optical properties for optoelectronic applications. While lonsdaleite Si is a well-characterized indirect semiconductor, experimental data and reliable calculations on lonsdaleite Ge are scarce and not consistent regarding the nature of its gap. Using ab initio density-functional theory, we calculate accurate structural, electronic, and optical properties for hexagonal Ge. Given the well-known sensitivity of electronic-structure calculations for Ge to the underlying approximations, we systematically test the performance of several exchange-correlation functionals, including meta-GGA and hybrid functionals. We first validate our approach for cubic Ge, obtaining atomic geometries and band structures in excellent agreement with available experimental data. Then, the same approach is applied to predict electronic and optical properties of lonsdaleite Ge. We portray lonsdaleite Ge as a direct semiconductor with only weakly dipole-active lowest optical transitions, small band gap, huge crystal-field splitting, and strongly anisotropic effective masses. The unexpectedly small direct gap and the oscillator strengths of the lowest optical transitions are explained in terms of symmetry and back-folding of energy bands of the diamond structure.

cond-mat.mtrl-sci↗

arXiv2015

Low-density silicon allotropes for photovoltaic applications

Silicon materials play a key role in many technologically relevant fields, ranging from the electronic to the photovoltaic industry. A systematic search for silicon allotropes was performed by employing a modified ab initio minima hopping crystal structure prediction method. The algorithm was optimized to specifically investigate the hitherto barely explored low-density regime of the silicon phase diagram by imitating the guest-host concept of clathrate compounds. In total 44 metastable phases are presented, of which 11 exhibit direct or quasi-direct band-gaps in the range of $\approx$1.0-1.8 eV, close to the optimal Shockley-Queisser limit of $\approx$1.4 eV, with a stronger overlap of the absorption spectra with the solar spectrum compared to conventional diamond silicon. Due to the structural resemblance to known clathrate compounds it is expected that the predicted phases can be synthesized.

cond-mat.mtrl-sci↗

arXiv2015

Estimating Excitonic Effects in the Absorption Spectra of Solids: Problems and Insight from a Guided Iteration Scheme

A major obstacle for computing optical spectra of solids is the lack of reliable approximations for capturing excitonic effects within time-dependent density-functional theory. We show that the trustful prediction of strongly bound electron-hole pairs within this framework using simple approximations is still a challenge and that available promising results have to be revisited. Deriving a set of analytical formula we analyze and explain the difficulties. We deduce an alternative approximation from an iterative scheme guided by previously available knowledge, significantly improving the description of exciton binding energies. Finally, we show how one can "read" exciton binding energies from spectra determined in the random phase approximation, without any further calculation.

cond-mat.mtrl-sci↗

arXiv2015

Identification of novel Cu, Ag, and Au ternary oxides from global structural prediction

We use ab initio global structural prediction, and specifically the minima hopping method, to explore the periodic table in search of novel oxide phases. In total, we study 183 different compositions of the form MXO2, where M=(Cu, Ag, Au) and X is an element of the periodic table. This set includes the well-known Cu delafossite compounds that are, up to now, the best p-type transparent conductive oxides known to mankind. Our calculations discover 81 stable compositions, out of which only 36 are included in available databases. Some of these new phases are potentially good candidates for transparent electrodes. These results demonstrate, on one hand, how incomplete is still our knowledge of the phase-space of stable ternary materials. On the other hand, we show that structural prediction combined with high-throughput approaches is a powerful tool to extend that knowledge, paving the way for the experimental discovery of new materials on a large scale.

cond-mat.mtrl-sci↗

arXiv2014

First-principles predicted low-energy structures of NaSc(BH4)4

According to previous interpretations of experimental data, sodium-scandium double-cation borohydride NaSc(BH$_4$)$_4$ crystallizes in the crystallographic space group $Cmcm$ where each sodium (scandium) atom is surrounded by six scandium (sodium) atoms. A careful investigation of this phase based on \textit{ab initio} calculations indicates that the structure is dynamically unstable and gives rise to an energetically and dynamically more favorable phase with $C222_1$ symmetry and nearly identical x-ray diffraction pattern. By additionally performing extensive structural searches with the minima-hopping method we discover a class of new low-energy structures exhibiting a novel structural motif in which each sodium (scandium) atom is surrounded by four scandium (sodium) atoms arranged at the corners of either a rectangle with nearly equal sides or a tetrahedron. These new phases are all predicted to be insulators with band gaps of $7.9-8.2$ eV. Finally, we estimate the influence of these structures on the hydrogen-storage performance of NaSc(BH$_4$)$_4$.

cond-mat.mtrl-sci↗