arXiv subjects

Sinuo Zhang

Publications and source records attributed to Sinuo Zhang.

8 recordsLinked to original sources

arXiv2026

The RD50-MPW4: A Radiation Hard HV CMOS Sensor for Future Colliders

The former CERN RD50 collaboration develops monolithic active pixel high voltage (HV) CMOS sensors for future colliders with the aim of high radiation tolerance, good time resolution, and high granularity pixel detectors. The most recent prototype, the RD50-MPW4, was produced by LFoundry in December 2023 using a 150 nm CMOS process. It features a matrix of 64x64 pixels with a 62 $\mu$m pitch and employs a column-drain readout architecture. Compared to its predecessor, it now has separate analog and digital power domains and a new biasing scheme with a guard ring structure that supports bias voltages over 600 V. This contribution will discuss the design and latest results of the MPW4, where tests with unirradiated samples showed more than 99.9% efficiency, 16 $\mu$m spatial resolution and 10 ns timing resolution. Efficiencies of over 99% were achieved for samples irradiated to fluences of $1 \times 10^{15}$ 1 MeV n$_{\mathrm{eq}}/\mathrm{cm}^2$. A 3D map of the charge collection efficiency from a measurement with two-photon absorption laser is presented that nicely outlines the depletion depth of this radiation hard, high granularity monolithic active pixel sensor.

physics.ins-det↗

arXiv2026

TPA-TCT analysis of the RD50-MPW4 monolithic pixel particle detector

The RD50-MPW4, a Depleted Monolithic Active Pixel Sensor (DMAPS) was analyzed using a Two Photon Absorption Transient Current Technique (TPA-TCT). This technique provides sensitivity maps with micrometer-scale spatial resolution, enabling the resolution of the boundaries of the detector's sensitive volume, even for small-area pixels (62 x 62 $\mu$m$^2$ in this study). With a 3D resolution, the depletion depth, the boundaries of the detector electric field, the 3D hit detection efficiency and the charge sharing between neighboring pixels were measured. The RD50-MPW4, a multi-project wafer chip developed by the HV-CMOS working group within the CERN RD50 collaboration, features a 64 x 64 DMAPS pixel matrix. Illuminating the chip from the backside, the TPA-TCT technique can characterize any pixel element in the matrix because silicon is transparent for near infrared laser light (1550 nm). Electron-hole pairs are generated only around the light focal point, deep in the silicon, so that any charge collected is precisely only from the focal point. With the TPA-TCT technique, the RD50-MPW4 was found to be have a 100% hit detection efficiency under specified conditions and an effective depletion depth of 226 $\mu$m. It was also found that part of the charge in the periphery of the pixel was collected in the neighboring pixel. A 3D map of the sensor clearly shows the in-pixel electronics and the limits of the depletion region.

physics.ins-det↗

arXiv2025

Multi-Agent Conditional Diffusion Model with Mean Field Communication as Wireless Resource Allocation Planner

In wireless communication systems, efficient and adaptive resource allocation plays a crucial role in enhancing overall Quality of Service (QoS). Compared to the conventional Model-Free Reinforcement Learning (MFRL) scheme, Model-Based RL (MBRL) first learns a generative world model for subsequent planning. The reuse of historical experience in MBRL promises more stable training behavior, yet its deployment in large-scale wireless networks remains challenging due to high-dimensional stochastic dynamics, strong inter-agent cooperation, and communication constraints. To overcome these challenges, we propose the Multi-Agent Conditional Diffusion Model Planner (MA-CDMP) for decentralized communication resource management. Built upon the Distributed Training with Decentralized Execution (DTDE) paradigm, MA-CDMP models each communication node as an autonomous agent and employs Diffusion Models (DMs) to capture and predict environment dynamics. Meanwhile, an inverse dynamics model guides action generation, thereby enhancing sample efficiency and policy scalability. Moreover, to approximate large-scale agent interactions, a Mean-Field (MF) mechanism is introduced as an assistance to the classifier in DMs. This design mitigates inter-agent non-stationarity and enhances cooperation with minimal communication overhead in distributed settings. We further theoretically establish an upper bound on the distributional approximation error introduced by the MF-based diffusion generation, guaranteeing convergence stability and reliable modeling of multi-agent stochastic dynamics. Extensive experiments demonstrate that MA-CDMP consistently outperforms existing MARL baselines in terms of average reward and QoS metrics, showcasing its scalability and practicality for real-world wireless network optimization.

cs.AI↗

arXiv2025

Conditional Diffusion Model with OOD Mitigation as High-Dimensional Offline Resource Allocation Planner in Clustered Ad Hoc Networks

Due to network delays and scalability limitations, clustered ad hoc networks widely adopt Reinforcement Learning (RL) for on-demand resource allocation. Albeit its demonstrated agility, traditional Model-Free RL (MFRL) solutions struggle to tackle the huge action space, which generally explodes exponentially along with the number of resource allocation units, enduring low sampling efficiency and high interaction cost. In contrast to MFRL, Model-Based RL (MBRL) offers an alternative solution to boost sample efficiency and stabilize the training by explicitly leveraging a learned environment model. However, establishing an accurate dynamic model for complex and noisy environments necessitates a careful balance between model accuracy and computational complexity $\&$ stability. To address these issues, we propose a Conditional Diffusion Model Planner (CDMP) for high-dimensional offline resource allocation in clustered ad hoc networks. By leveraging the astonishing generative capability of Diffusion Models (DMs), our approach enables the accurate modeling of high-quality environmental dynamics while leveraging an inverse dynamics model to plan a superior policy. Beyond simply adopting DMs in offline RL, we further incorporate the CDMP algorithm with a theoretically guaranteed, uncertainty-aware penalty metric, which theoretically and empirically manifests itself in mitigating the Out-of-Distribution (OOD)-induced distribution shift issue underlying scarce training data. Extensive experiments also show that our model outperforms MFRL in average reward and Quality of Service (QoS) while demonstrating comparable performance to other MBRL algorithms.

cs.NI↗

arXiv2024

Cross talk of a large-scale depleted monolithic active pixel sensor (DMAPS) in 180 nm CMOS technology

Monolithic pixel detectors combine readout electronics and sensor in a single entity of silicon, which simplifies the production procedure and lowers the material budget compared to conventional hybrid pixel detector concepts. Benefiting from the advances in commercial CMOS processes towards large biasing voltage capabilities and the increasing availability of high-resistivity substrates, depleted monolithic active pixel sensors (DMAPS) are able to cope with the high-rate and high-radiation environments faced in modern high-energy physics experiments. TJ-Monopix2 is the latest iteration of a DMAPS development line designed in 180 nm TowerSemicondutor technology, which features a large scale (2 x 2) cm$^2$ chip divided into (512 x 512) pixels with a pitch of (33 x 33) um$^2$. All in-pixel electronics are separated from its small collection electrode and process modifications are implemented to improve charge collection efficiency especially after irradiation. The latest laboratory measurements and investigations of a threshold variation observed for TJ-Monopix2 in typical operating conditions are presented.

physics.ins-det↗

arXiv2023

Breakdown Performance of Guard Ring Designs for Pixel Detectors in $150~\mathrm{nm}$ CMOS Technology

Silicon pixel sensors manufactured using commercial CMOS processes are promising instruments for high-energy particle physics experiments due to their high yield and proven radiation hardness. As one of the essential factors for the operation of detectors, the breakdown performance of pixel sensors constitutes the upper limit of the operating voltage. Six types of passive CMOS test structures were fabricated on high-resistivity wafers. Each of them features a combination of different inter-pixel designs and sets of floating guard rings, which differ from each other in the geometrical layout, implantation type, and overhang structure. A comparative study based on leakage current measurements in the sensor substrate of unirradiated samples was carried out to identify correlations between guard ring designs and breakdown voltages. TCAD simulations using the design parameters of the test structures were performed to discuss the observations and, together with the measurements, ultimately provide design features targeting higher breakdown voltages.

physics.ins-det↗

arXiv2020

Improving the Spatial Resolution of Silicon Pixel Detectors through Sub-pixel Cross-coupling

We present a concept to improve the spatial resolution of silicon pixel-detectors via the implementation of a sub-pixel cross-coupling, which introduces directional charge sharing between pixels. The charge-collection electrode is segmented into sub-pixels and each sub-pixel is coupled to the closest sub-pixel of the neighboring pixel. Such coupling schema is evaluated for a model sensor design with $50 μm \times 50 μm$ pixels and AC-coupled sub-pixels. A first-order SPICE simulation is used, to determine feasible coupling strengths and assess the influence on the charge-collection efficiency. The impact of the coupling strength on spatial resolution is studied with a dedicated simulation, taking into account charge-cloud evolution, energy-loss straggling, electronic noise, and the charge detection-threshold. Using simplifying assumptions, such as perpendicular tracks and no gaps between charge-collection electrodes, an improvement of the spatial resolution by up to approximately $30\%$ is obtained in comparison to the standard planar pixel layout.

physics.ins-det↗

arXiv2020

DMAPS Monopix developments in large and small electrode designs

LF-Monopix1 and TJ-Monopix1 are depleted monolithic active pixel sensors (DMAPS) in 150 nm LFoundry and 180 nm TowerJazz CMOS technologies respectively. They are designed for usage in high-rate and high-radiation environments such as the ATLAS Inner Tracker at the High-Luminosity Large Hadron Collider (HL-LHC). Both chips are read out using a column-drain readout architecture. LF-Monopix1 follows a design with large charge collection electrode where readout electronics are placed inside. Generally, this offers a homogeneous electrical field in the sensor and short drift distances. TJ-Monopix1 employs a small charge collection electrode with readout electronics separated from the electrode and an additional n-type implant to achieve full depletion of the sensitive volume. This approach offers a low sensor capacitance and therefore low noise and is typically implemented with small pixel size. Both detectors have been characterized before and after irradiation using lab tests and particle beams.

physics.ins-det↗