arXiv subjects

Sohrab Ismail-Beigi

Publications and source records attributed to Sohrab Ismail-Beigi.

At least 55 records · Page 3Linked to original sources

arXiv2012

Ferroelectric control of magnetization in La_{1-x}Sr_xMnO3 manganites: A first-principle study

We present a first-principles study on the interface between perovskite ferroelectrics (PbTiO3) and conducting magnetic manganites La_{1-x}Sr_xMnO3. We show that by switching the ferroelectric polarization, additional carriers are accumulated or depleted at the interfacial region of the manganite and that this change in carrier density can modify the magnetic spin configuration of the interfacial Mn, which is consistent with the experimentally observed anomalously large change in the magnetization. We also describe an unexpected purely interfacial phenomenon whereby the ferroelectric polarization of the interfacial region changes the magnetic energetics --- a degree of freedom not present in bulk manganites. Theoretically, we show the the ground-state magnetic structure depends sensitively on the precise choice of Hubbard $U$ parameter within the widely-used DFT+U class of exchange correlation functionals. We provide a simple Ising-like model that explains the evolution of the magnetic structure with U in tandem with a discussion of various different ways in which one might try to choose an appropriate U parameter.

cond-mat.mtrl-sci↗

arXiv2010

Electronic and magnetic properties of SrTiO3/LaAlO3 interfaces from first principles

A number of intriguing properties emerge upon the formation of the epitaxial interface between the insulating oxides LaAlO3 and SrTiO3. These properties, which include a quasi two-dimensional conducting electron gas, low temperature superconductivity, and magnetism, are not present in the bulk materials, generating a great deal of interest in the fundamental physics of their origins. While it is generally accepted that the novel behavior arises as a result of a combination of electronic and atomic reconstructions and growth-induced defects, the complex interplay between these effects remains unclear. In this report, we review the progress that has been made towards unraveling the complete picture of the SrTiO3/LaAlO3 interface, focusing primarily on present ab initio theoretical work and its relation to the experimental data. In the process, we highlight some key unresolved issues and discuss how they might be addressed by future experimental and theoretical studies.

cond-mat.mtrl-sci↗

arXiv2010

A First-Principles Study of the Electronic Reconstructions of LaAlO3/SrTiO3 Heterointerfaces and Their Variants

We present a first-principles study of the electronic structures and properties of ideal (atomically sharp) LaAlO3/SrTiO3 (001) heterointerfaces and their variants such as a new class of quantum well systems. We demonstrate the insulating-to-metallic transition as a function of the LaAlO3 film thickness in these systems. After the phase transition, we find that conduction electrons are bound to the n-type interface while holes diffuse away from the p-type interface, and we explain this asymmetry in terms of a large hopping matrix element that is unique to the n-type interface. We build a tight-binding model based on these hopping matrix elements to illustrate how the conduction electron gas is bound to the n-type interface. Based on the `polar catastrophe' mechanism, we propose a new class of quantum wells at which we can manually control the spatial extent of the conduction electron gas. In addition, we develop a continuous model to unify the LaAlO3/SrTiO3 interfaces and quantum wells and predict the thickness dependence of sheet carrier densities of these systems. Finally, we study the external field effect on both LaAlO3/SrTiO3 interfaces and quantum well systems. Our systematic study of the electronic reconstruction of LaAlO3/SrTiO3 interfaces may serve as a guide to engineering transition metal oxide heterointerfaces.

cond-mat.mtrl-sci↗

arXiv2010

The correlation energy functional within the GW-RPA approximation: exact forms, approximate forms and challenges

In principle, the Luttinger-Ward Green's function formalism allows one to compute simultaneously the total energy and the quasiparticle band structure of a many-body electronic system from first principles. We present approximate and exact expressions for the correlation energy within the GW-RPA approximation that are more amenable to computation and allow for developing efficient approximations to the self-energy operator and correlation energy. The exact form is a sum over differences between plasmon and interband energies. The approximate forms are based on summing over screened interband transitions. We also demonstrate that blind extremization of such functionals leads to unphysical results: imposing physical constraints on the allowed solutions (Green's functions) is necessary. Finally, we present some relevant numerical results for atomic systems.

cond-mat.mtrl-sci↗

arXiv2009

Fundamental asymmetry in interfacial electronic reconstruction between insulating oxides

We present an ab initio study of the (001) interfaces between two insulating perovskites, the polar LaAlO3 and the nonpolar SrTiO3. We observe an insulating-to-metallic transition above a critical LaAlO3 thickness. We explain that the high conductivity observed at the TiO2 /LaO interface and the lack of similar conductivity at the SrO/AlO2 interface are inherent in the atomic geometry of the system. A large interfacial hopping matrix element between cations causes the formation of a bound electron state at the TiO2 /LaO interface. This mechanism for the formation of interfacial bound states suggests a robust means for tuning conductivities at various oxide heterointerfaces.

cond-mat.mtrl-sci↗

arXiv2007

Novel Precursors for Boron Nanotubes: The Competition of Two-Center and Three-Center Bonding in Boron Sheets

We present a new class of boron sheets, composed of triangular and hexagonal motifs, that are more stable than structures considered to date and thus are likely to be the precursors of boron nanotubes. We describe a simple and clear picture of electronic bonding in boron sheets and highlight the importance of three-center bonding and its competition with two-center bonding, which can also explain the stability of recently discovered boron fullerenes. Our findings call for reconsideration of the literature on boron sheets, nanotubes, and clusters.

cond-mat.mtrl-sci↗

arXiv2006

Selection Rules for One- and Two-Photon Absorption by Excitons in Carbon Nanotubes

Recent optical absorption/emission experiments showed that the lower energy optical transitions in carbon nanotubes are excitonic in nature, as predicted by theory. These experiments were based on the symmetry aspects of free electron-hole states and bound excitonic states. The present work shows, however, that group theory does not predict the selection rules needed to explain the two photon experiments. We obtain the symmetries and selection rules for the optical transitions of excitons in single-wall carbon nanotubes within the approach of the group of the wavevector, thus providing important information for the interpretation of theoretical and experimental optical spectra of these materials.

cond-mat.mtrl-sci↗

arXiv2006

Diameter and Chirality Dependence of Exciton Properties in Carbon Nanotubes

We calculate the diameter and chirality dependences of the binding energies, sizes, and bright-dark splittings of excitons in semiconducting single-wall carbon nanotubes (SWNTs). Using results and insights from {\it ab initio} calculations, we employ a symmetry-based, variational method based on the effective-mass and envelope-function approximations using tight-binding wavefunctions. Binding energies and spatial extents show a leading dependence with diameter as $1/d$ and $d$, respectively, with chirality corrections providing a spread of roughly 20% with a strong family behavior. Bright-dark exciton splittings show a $1/d^2$ leading dependence. We provide analytical expressions for the binding energies, sizes, and splittings that should be useful to guide future experiments.

cond-mat.mtrl-sci↗

arXiv2006

Truncation of Periodic Image Interactions for Confined Systems

First principles methods based on periodic boundary conditions are used extensively by materials theorists. However, applying these methods to systems with confined electronic states entails the use of large unit cells in order to avoid artificial image interactions. We present a general approach for truncating the Coulomb interaction that removes image effects directly and leads to well converged results for modest-sized periodic cells. As an illustration, we find the lowest-energy quasiparticle and exciton states in two-dimensional hexagonal GaN sheets. These sheets have been proposed as parent materials for single-walled GaN nanotubes which may be of interest for optoelectronics.

cond-mat.mtrl-sci↗

arXiv2005

Theory and it ab initio calculation of radiative lifetime of excitons in semiconducting carbon nanotubes

We present theoretical analysis and first-principles calculation of the radiative lifetime of excitons in semiconducting carbon nanotubes. An intrinsic lifetime of the order of 10 ps is computed for the lowest optically active bright excitons. The intrinsic lifetime is however a rapid increasing function of the exciton momentum. Moreover, the electronic structure of the nanotubes dictates the existence of dark excitons nearby in energy to each bright exciton. Both effects strongly influence measured lifetime. Assuming a thermal occupation of bright and dark exciton bands, we find an effective lifetime of the order of 10 ns at room temperature, in good accord with recent experiments.

cond-mat.mtrl-sci↗

arXiv2004

Excitonic Effects and Optical Spectra of Single-Walled Carbon Nanotubes

Many-electron effects often dramatically modify the properties of reduced dimensional systems. We report calculations, based on an many-electron Green's function approach, of electron-hole interaction effects on the optical spectra of small-diameter single-walled carbon nanotubes. Excitonic effects qualitatively alter the optical spectra of both semiconducting and metallic tubes. Excitons are bound by ~ 1 eV in the semiconducting (8,0) tube and by ~ 100 meV in the metallic (3,3) tube. These large many-electron effects explain the discrepancies between previous theories and experiments.

cond-mat.mtrl-sci↗

arXiv2003

Effect of Semicore Orbitals on the Electronic Band Gaps of Si, Ge, and GaAs within the GW Approximation

We study the effect of semicore states on the self-energy corrections and electronic energy gaps of silicon, germanium and GaAs. Self-energy effects are computed within the GW approach, and electronic states are expanded in a plane-wave basis. For these materials, we generate {\it ab initio} pseudopotentials treating as valence states the outermost two shells of atomic orbitals, rather than only the outermost valence shell as in traditional pseudopotential calculations. The resulting direct and indirect energy gaps are compared with experimental measurements and with previous calculations based on pseudopotential and ``all-electron'' approaches. Our results show that, contrary to recent claims, self-energy effects due to semicore states on the band gaps can be well accounted for in the standard valence-only pseudopotential formalism.

cond-mat.mtrl-sci↗

arXiv2002

Ab initio and finite-temperature molecular dynamics studies of lattice resistance in tantalum

This manuscript explores the apparent discrepancy between experimental data and theoretical calculations of the lattice resistance of bcc tantalum. We present the first results for the temperature dependence of the Peierls stress in this system and the first ab initio calculation of the zero-temperature Peierls stress to employ periodic boundary conditions, which are those best suited to the study of metallic systems at the electron-structure level. Our ab initio value for the Peierls stress is over five times larger than current extrapolations of experimental lattice resistance to zero-temperature. Although we do find that the common techniques for such extrapolation indeed tend to underestimate the zero-temperature limit, the amount of the underestimation which we observe is only 10-20%, leaving open the possibility that mechanisms other than the simple Peierls stress are important in controlling the process of low temperature slip.

cond-mat.mtrl-sci↗

arXiv2002

Elasticity of nanometer-sized objects

We initiate the development of a theory of the elasticity of nanoscale objects based upon new physical concepts which remain properly defined on the nanoscale. This theory provides a powerful way of understanding nanoscale elasticity in terms of local group contributions and gives insight into the breakdown of standard continuum relations. We also give two applications. In the first, we show how to use the theory to derive a new relation between the bending and stretching properties of nanomechanical resonators and to prove that it is much more accurate than the continuum-based relations currently employed in present experimental analyses. In the second, we use the new approach to link features of the underlining electronic structure to the elastic response of a silicon nanoresonator.

cond-mat.mtrl-sci↗

arXiv2001

Coupling of Nonlocal Potentials to Electromagnetic Fields

Nonlocal Hamiltonians are used widely in first-principles quantum calculations; the nonlocality stems from eliminating undesired degrees of freedom, e.g. core electrons. To date, attempts to couple nonlocal systems to external electromagnetic (EM) fields have been heuristic or limited to weak or long wavelength fields. Using Feynman path integrals, we derive an exact, closed-form coupling of arbitrary EM fields to nonlocal systems. Our results justify and clarify the couplings used to date and are essential for systematic computation of linear and especially nonlinear response.

cond-mat.mtrl-sci↗

arXiv2000

New Physics of the $30^\circ$ Partial Dislocation in Silicon Revealed through {\em Ab Initio} Calculation

Based on {\em ab initio} calculation, we propose a new structure for the fundamental excitation of the reconstructed 30$^\circ$ partial dislocation in silicon. This soliton has a rare structure involving a five-fold coordinated atom near the dislocation core. The unique electronic structure of this defect is consistent with the electron spin resonance signature of the hitherto enigmatic thermally stable R center of plastically deformed silicon. We present the first {\em ab initio} determination of the free energy of the soliton, which is also in agreement with the experimental observation. This identification suggests the possibility of an experimental determination of the density of solitons, a key defect in understanding the plastic flow of the material.

cond-mat.mtrl-sci↗

arXiv2000

A Priori Approach to Calculation of Energies of Solvation

We propose a systematic, {\em a priori} approach to the problem of the calculation of solvation energies using continuum dielectric models coupled to quantum mechanical description of reacting molecules. Our method does not rely on empirically scaled van der Waals radii to create a dielectric cavity, but rather uses the electron density of the reactants as the physical variable describing the cavity. In addition, the precise choice of cavity is made by ensuring that the dielectric reproduces the correct linear response of the solvent to electrostatic perturbations. As a model application which is interesting in its own right, we study the hydrolysis of methylene chloride, a representative model waste compound in supercritical oxidation experiments, and which has shown surprising solvation effects close to the critical point of pure water (T=394$^o$ C, P=221 bar). Using our {\em a priori} methodology, we find results in good agreement with available experimental reaction barriers. We then study, in a controlled manner, the relative importance of various further approximations that are routinely performed in the literature such as the use of spherical cavities, the replacement of the reactant by a dipole, or the neglect of self consistency in solving the electrostatic problem.

cond-mat.mtrl-sci↗

arXiv2000

New Algebraic Formulation of Density Functional Calculation

This article addresses a fundamental problem faced by the ab initio community: the lack of an effective formalism for the rapid exploration and exchange of new methods. To rectify this, we introduce a novel, basis-set independent, matrix-based formulation of generalized density functional theories which reduces the development, implementation, and dissemination of new ab initio techniques to the derivation and transcription of a few lines of algebra. This new framework enables us to concisely demystify the inner workings of fully functional, highly efficient modern ab initio codes and to give complete instructions for the construction of such for calculations employing arbitrary basis sets. Within this framework, we also discuss in full detail a variety of leading-edge ab initio techniques, minimization algorithms, and highly efficient computational kernels for use with scalar as well as shared and distributed-memory supercomputer architectures.

cond-mat.mtrl-sci↗