arXiv subjects

Soohyung Park

Publications and source records attributed to Soohyung Park.

5 recordsLinked to original sources

arXiv2026

GaN Nucleation Landscape on Patterned Sapphire Shaped by the Growth Temperature of Directly Grown Boron-Compound Masks

The growth temperature of directly grown boron-compound masks on patterned sapphire can modify the local accessibility of the underlying sapphire surface and thereby alter the subsequent nucleation behavior of GaN. In this work, we investigate how ammonia-borane-derived boron-compound masks grown at different temperatures shape the GaN nucleation landscape within circular SiO$_2$ openings during the initial stage of epitaxial lateral overgrowth. The preferential nucleation position of GaN changes systematically with mask growth temperature: masks grown at 700--750$^\circ$C produce pronounced edge-biased distributions, whereas higher-temperature masks lead to more inward-shifted and spatially sparse GaN domains. Quantitative analysis of the GaN areal fraction, the number of visibly isolated domains, and the radial distribution of domain centers shows that the mask growth temperature affects both the amount of GaN coverage and the spatial arrangement of GaN domains within each opening. The nonmonotonic change in the number of visibly isolated domains is interpreted as a consequence of competition between reduced lateral merging and reduced effective substrate accessibility, rather than as a direct measure of the number of active nucleation sites. Kinetic Monte Carlo simulations reproduce the essential experimental trends by varying the effective density and radial distribution of substrate-accessible sites. These results suggest that the growth temperature of directly formed boron-compound masks provides a practical means of reshaping the intra-opening GaN nucleation landscape by controlling the spatial distribution and effectiveness of local pathways through which GaN precursors can access the underlying sapphire surface.

cond-mat.mtrl-sci↗

arXiv2021

Temperature-dependent electronic ground state charge transfer in van der Waals heterostructures

Electronic charge rearrangement between components of a heterostructure is the fundamental principle to reach the electronic ground state. It is acknowledged that the density of states distribution of the components governs the amount of charge transfer, but a notable dependence on temperature has not yet been considered, particularly for weakly interacting systems. Here, we experimentally observe that the amount of ground state charge transfer in a van der Waals heterostructure formed by monolayer MoS2 sandwiched between graphite and a molecular electron acceptor layer increases by a factor of three when going from 7 K to room temperature. State-of-the-art electronic structure calculations of the full heterostructure that account for nuclear thermal fluctuations reveal intra-component electron-phonon coupling and inter-component electronic coupling as the key factors determining the amount of charge transfer. This conclusion is rationalized by a model applicable to multi-component van der Waals heterostructures.

cond-mat.mtrl-sci↗

arXiv2019

Pulsed thermal deposition of binary and ternary transition metal dichalcogenide monolayers and heterostructures

Application of transition metal dichalcogenides (TMDC) in photonic, optoelectronic or valleytronic devices requires the growth of continuous monolayers, heterostructures and alloys of different materials in a single process. We present a facile pulsed thermal deposition method which provides precise control over layer thickness and stoichiometry of two-dimensional systems. The versatility of the method is demonstrated on ternary monolayers of Mo$_{1-x}$W$_{x}$S$_{2}$ and on heterostructures combining metallic TaS$_{2}$ and semiconducting MoS$_{2}$ layers. The fabricated ternary monolayers cover the entire composition range of $x$ = 0...1 without phase separation. Band gap engineering and control over the spin-orbit coupling strength is demonstrated by absorption and photoluminescence spectroscopy. Vertical heterostructures are grown without intermixing. The formation of clean and atomically abrupt interfaces is evidenced by high-resolution transmission electron microscopy. Since both the metal components as well as the chalcogenides are thermally evaporated complex alloys and heterostructures can thus be prepared.

cond-mat.mtrl-sci↗

arXiv2018

Direct observation of state-filling at hybrid tin oxide/organic interfaces

Electroluminescence (EL) spectra from hybrid charge transfer excitons at metal oxide/organic type-II heterojunctions exhibit pronounced bias-induced spectral shifts. The reasons for this phenomenon have been discussed controversially and arguments for both electric field-induced effects as well as filling of trap states at the oxide surface have been put forward. Here, we combine the results from EL and photovoltaic measurements to eliminate the disguising effects of the series resistance. For SnOx combined with the conjugated polymer MeLPPP, we find a one-to-one correspondence between the blueshift of the EL peak and the increase of the quasi-Fermi level splitting at the hybrid heterojunction, which we unambiguously assign to state filling. Our data is resembled best by a model considering the combination an exponential density of states with a doped semiconductor.

cond-mat.mtrl-sci↗

arXiv2015

Observation of tunable bandgap and anisotropic Dirac semimetal state in black phosphorus

Black phosphorus consists of stacked layers of phosphorene, a two-dimensional semiconductor with promising device characteristics. We report the realization of a widely tunable bandgap in few-layer black phosphorus doped with potassium using an in-situ surface doping technique. Through band-structure measurements and calculations, we demonstrate that a vertical electric field from dopants modulates the bandgap owing to the giant Stark effect and tunes the material from a moderate-gap semiconductor to a band-inverted semimetal. At the critical field of this band inversion, the material becomes a Dirac semimetal with anisotropic dispersion, linear in armchair and quadratic in zigzag directions. The tunable band structure of black phosphorus may allow great flexibility in design and optimization of electronic and optoelectronic devices.

cond-mat.mtrl-sci↗