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Sorina Lazanu

Publications and source records attributed to Sorina Lazanu.

At least 19 recordsLinked to original sources
arXiv2020

About detecting very low mass black holes in LAr detectors

The nature of dark matter is still an open problem. The simplest assumption is that gravity is the only force coupled certainly to dark matter and thus the micro black holes could be a viable candidate. We investigated the possibility of direct detection of micro black holes with masses around and upward the Planck scale (10$^{-5}$ g), ensuring classical gravitational treatment of these objects in the next generation of huge LAr detectors. We show that the signals (ionization and scintillation) produced in LAr enable the discrimination between micro black holes or other particles. It is expected that the trajectories of these micro black holes will appear as crossing the whole active medium, in any direction, producing uniform ionization and scintillation on all the path.

hep-ph↗
arXiv2015

Contribution of the electron-phonon interaction to Lindhard energy partition at low energy in Ge and Si detectors for astroparticle physics applications

The influence of the transient thermal effects on the partition of the energy of selfrecoils in germanium and silicon into energy eventually given to electrons and to atomic recoils respectively is studied. The transient effects are treated in the frame of the thermal spike model, which considers the electronic and atomic subsystems coupled through the electron - phonon interaction. For low energies of selfrecoils, we show that the corrections to the energy partition curves due to the energy exchange during the transient processes modify the Lindhard predictions. These effects depend on the initial temperature of the target material, as the energies exchanged between electronic and lattice subsystems have different signs for temperatures lower and higher than about 15 K. Many of the experimental data reported in the literature support the model.

astro-ph.IM↗
arXiv2013

Analysis of defect formation in semiconductor cryogenic bolometric detectors created by heavy dark matter

The cryogenic detectors in the form of bolometers are presently used for different applications, in particular for very rare or hypothetical events associated with new forms of matter, specifically related to the existence of Dark Matter. In the detection of particles with a semiconductor as target and detector, usually two signals are measured: ionization and heat. The amplification of the thermal signal is obtained with the prescriptions from Luke-Neganov effect. The energy deposited in the semiconductor lattice as stable defects in the form of Frenkel pairs at cryogenic temperatures, following the interaction of a dark matter particle, is evaluated and consequences for measured quantities are discussed. This contribution is included in the energy balance of the Luke effect. Applying the present model to germanium and silicon, we found that for the same incident weakly interacting massive particle the energy deposited in defects in germanium is about twice the value for silicon.

astro-ph.IM↗
arXiv2011

Transient thermal effects in solid noble gases as materials for the detection of Dark Matter

The transient phenomena produced in solid noble gases by the stopping of the recoils resulting from the elastic scattering processes of WIMPs from the galactic halo were modelled, as dependencies of the temperatures of lattice and electronic subsystems on the distance to the recoil's trajectory, and time from its passage. The peculiarities of these thermal transients produced in Ar, Kr and Xe were analysed for different initial temperatures and WIMP energies, and were correlated with the characteristics of the targets and with the energy loss of the recoils. The results were compared with the thermal spikes produced by the same WIMPs in Si and Ge. In the range of the energy of interest, up to tens of keV for the self-recoil, local phase transitions solid - liquid and even liquid - gas were found possible, and the threshold parameters were established.

astro-ph.IM↗
arXiv2011

Stress-induced traps in multilayered structures

The trap parameters of defects in Si/CaF2 multilayered structures were determined from the analysis of optical charging spectroscopy measurements. Two kinds of maxima were observed. Some of them were rather broad, corresponding to "normal" traps, while the others, very sharp, were attributed to stress-induced traps. A procedure of optimal linear smoothing the noisy experimental data has been developed and applied. This procedure is based on finding the minimal value of the relative error with respect to the value of the smoothing window. In order to obtain a better accuracy for the description of the trapping-detrapping process, a Gaussian temperature dependence of the capture crosssections characterizing the stress-induced traps was introduced. Both the normal and the stress-induced traps have been characterized, including some previously considered as only noise features.

cond-mat.mes-hall↗
arXiv2010

Modelling the transient processes produced under heavy particle irradiation

A new model for the thermal spike produced by the nuclear energy loss, as source of transient processes, is derived analytically, for power law dependences of the diffusivity on temperature, as solution of the heat equation. The contribution of the ionizing energy loss to the spike is not included. The range of validity of the model is analysed, and the results are compared with numerical solutions obtained in the frame of the previous model of the authors, which takes into account both nuclear and ionization energy losses, as well as the coupling between the two subsystems in crystalline semiconductors. Particular solutions are discussed and the errors induced by these approximations are analysed.

physics.ins-det↗
arXiv2010

Gif Lectures on direct detection of Dark Matter

These notes cover some of the topics associated with direct detection of dark matter at an introductory level. The general principles of dark matter search are summarized. The current status of some experiments is described, with an emphasis on bolometric and noble liquid techniques. Plots and illustrations associated to these notes may be found on transparencies presented during the lecture, on the web site of Gif school 2009.

hep-ex↗
arXiv2009

Short remarks on possible production of defects in low temperature semiconductor detectors for dark matter physics experiments

The nature of dark matter is still an open problem, but there is evidence that a large part of the dark matter in the universe is non-baryonic, non-luminous and non-relativistic and hypothetical Weakly Interacting Massive Particles (WIMPs) are candidates that satisfy all of the above criteria. In order to minimize the ambiguities in the identification of WIMPs' interactions in their search, in more experiments, two distinct quantities are simultaneously measured: the ionization and phonon or light from scintillation signals. Silicon and germanium crystals are used in some experiments. In this paper we discuss the production of defects in semiconductors due to WIMP interactions and estimate their contribution in the energy balance. This phenomenon is present at all temperatures, is important in the range of keV energies, but is not taken into consideration in the usual analysis of experimental signals and could introduce errors in identification for WIMPs.

physics.ins-det↗
arXiv2006

Modelling spatial distribution of defects and estimation of electrical degradation of silicon detectors in radiation fields at high luminosity

The irradiation represents a useful tool for determining the characteristics of defects in semiconductors as well as a method to evaluate their degradation, fact with important technological consequences. In this contribution, starting from available data on the degradation of silicon detector characteristics in radiation fields, these effects are explained in the frame of a model that supposes also the production of the SiFFCD defect due to irradiation. The displacement threshold energies - different for different crystallographic axes, considered as parameters of the model, are established and the results obtained could contribute to clarify these controversial aspects. Predictions of the degradation of electrical parameters (leakage current, effective carrier concentration and effective trapping probabilities for electrons and holes) of DOFZ silicon detectors in the hadron background of the LHC accelerator, supposing operation at -10 grdC are done. The non uniformity of the rate of production of primary defects and of complexes, as a function of depth, for incident particles with low kinetic energy was obtained by simulations in some particular and very simplifying assumptions, suggesting the possible important contribution of the low energy component of the background spectra to detector degradation.

physics.ins-det↗
arXiv2006

Correlation between radiation processes in silicon and long-time degradation of detectors for high energy physics experiments

In this contribution, the correlation between fundamental interaction processes induced by radiation in silicon and observable effects which limit the use of silicon detectors in high energy physics experiments is investigated in the frame of a phenomenological model which includes: generation of primary defects at irradiation starting from elementary interactions in silicon; kinetics of defects, effects at the p-n junction detector level. The effects due to irradiating particles (pions, protons, neutrons), to their flux, to the anisotropy of the threshold energy in silicon, to the impurity concentrations and resistivity of the starting material are investigated as time, fluence and temperature dependences of detector characteristics. The expected degradation of the electrical parameters of detectors in the complex hadron background fields at LHC & SLHC are predicted.

physics.ins-det↗
arXiv2006

Silicon detectors: damage, modelling and expected long-time behaviour in physics experiments at ultra high energy

In this contribution, the structural modifications of the material and the degradation of devices is modelled and compared with experimental data for more resistivities, temperatures, crystal orientations and oxygen concentrations, considering the existence of the new primary fourfold coordinated defect, besides the vacancy and the interstitial. Some estimations of the behaviour of detectors in concrete environments at the next generations of high energy physics experiments as LHC, SLHC, VLHC, or ULHC are done.

physics.ins-det↗
arXiv2006

Time dependence of the behaviour of silicon detectors in intense radiation fields and the role of primary point defects

The bulk displacement damage in the detector, produces effects at the device level that limits the long time utilisation of detectors as position sensitive devices and thus the lifetime of detector systems. So, the prediction of time behaviour of detectors in hostile radiation environments represents a very useful tool. In this contribution we predict the time degradation of silicon detectors in the radiation environments expected in the LHC machine upgrade in luminosity and energy as SLHC, for detectors fabricated from silicon crystals obtained by different growth technologies, in the frame of the model developed by the authors, and which takes into account the contribution of primary defects.

physics.ins-det↗
arXiv2006

An Analysis of the Expected Degradation of Silicon Detectors in the Future Ultra High Energy Facilities

In this contribution we discuss how to prepare some possible detectors - only silicon option being considered, for the new era of HEP challenges because the bulk displacement damage in the detector, consequence of irradiation, produces effects at the device level that limit their long time utilisation, increasing the leakage current and the depletion potential, eventually up to breakdown, and thus affecting the lifetime of detector systems. Physical phenomena that conduce to the degradation of the detector are analysed both at the material and device levels, and some predictions of the time degradation of silicon detectors in the radiation environments expected in the LHC machine upgrade in luminosity and energy as SLHC or VLHC, or at ULHC are given. Possible effects at the detector level after high energy cosmic proton bombardment are investigated as well. Time dependences of these device parameters are studied in conditions of continuous irradiation and the technological options for detector materials are discussed, to obtain devices harder to radiation.

physics.ins-det↗
arXiv2004

Scenarios about the long-time damage of silicon as material and detectors operating beyond LHC collider conditions

For the new hadron collider LHC and some of its updates in luminosity and energy, as SLHC and VLHC, the silicon detectors could represent an important option, especially for the tracking system and calorimetry. The main goal of this paper is to analyse the expected long-time degradation in the bulk of the silicon as material and for silicon detectors, in continuous radiation field, in these hostile conditions. The behaviour of silicon in relation to various scenarios for upgrade in energy and luminosity is discussed in the frame a phenomenological model developed previously by the authors. Different silicon material parameters resulting from different technologies are considered to evaluate what materials are harder to radiation and consequently could minimise the degradation of device parameters in conditions of continuous long time operation.

hep-ph↗
arXiv2003

Systematic study related to the role of initial impurities and irradiation rates in the formation and evolution of complex defects in silicon for detectors in HEP experiments

The influence of oxygen and carbon impurities on the concentrations of defects in silicon for detector uses, in complex fields of radiation, characteristic to high energy physics experiments, is investigated in the frame of the quantitative phenomenological model developed previously by the authors and extended in the present paper. Continuous irradiation conditions are considered, simulating realistically the environments for these experiments. The generation rate of primary defects is calculated starting from the projectile - silicon interaction and from the recoil energy redistribution in the lattice. The mechanisms of formation of complex defects are explicitly analysed. Vacancy-interstitial annihilation, interstitial and vacancy migration to sinks, divacancy, vacancy- and interstitial-impurity complex formation and decomposition are considered. Oxygen and carbon impurities present in silicon could monitor the concentration of all stable defects, due to their interaction with vacancies and interstitials. Their role in the mechanisms of formation and decomposition of the following stable defects: V_2, VO, V_2O, C_i, C_iO_i, C_iC_s and VP, is studied. The model predictions cover a generation primary rate of defects between 10^2 pairs/cm3/s and 10^{11} pairs/cm3/s, and could be a useful clue in obtaining harder materials for detectors for space missions, at the new generation of accelerators, as, e.g. LHC, Super-LHC and Eloisatron, or for industrial applications.

hep-ph↗
arXiv2003

Role of Oxygen and Carbon Impurities in the Radiation Resistance of Silicon Detectors

The influence of oxygen and carbon impurities on the concentrations of defects in silicon for detector uses, in complex fields of radiation (proton cosmic field at low orbits around the Earth, at Large Hadron Collider and at the next generation of accelerators as Super-LHC) is investigated in the frame of the quantitative model developed previously by the authors. The generation rate of primary defects is calculated starting from the projectile - silicon interaction and from recoil energy redistribution in the lattice. The mechanisms of formation of complex defects are explicitly analysed. Vacancy-interstitial annihilation, interstitial and vacancy migration to sinks, divacancy, vacancy and interstitial impurity complex formation and decomposition are considered. Oxygen and carbon impurities present in silicon could monitor the concentration of all stable defects, due to their interaction with vacancies and interstitials. Their role in the mechanisms of formation and decomposition of the following stable defects: VP, VO, V_2, V_2O, C_i, C_iO_i and C_iC_s is studied. The model predictions could be a useful clue in obtaining harder materials for detectors at the new generation of accelerators, for space missions or for industrial applications.

physics.ins-det↗
arXiv2002

The influence of initial impurities and irradiation conditions on defect production and annealing in silicon for particle detectors

Silicon detectors in particle physics experiments at the new accelerators or in space missions for physics goals will be exposed to extreme radiation conditions. The principal obstacles to long-term operation in these environments are the changes in detector parameters, consequence of the modifications in material properties after irradiation. The phenomenological model developed in the present paper is able to explain quantitatively, without free parameters, the production of primary defects in silicon after particle irradiation and their evolution toward equilibrium, for a large range of generation rates of primary defects. Vacancy-interstitial annihilation, interstitial migration to sinks, divacancy and vacancy-impurity complex (VP, VO, V2O, CiOi and CiCs) formation are taken into account. The effects of different initial impurity concentrations of phosphorus, oxygen and carbon, as well as of irradiation conditions are systematically studied. The correlation between the rate of defect production, the temperature and the time evolution of defect concentrations is also investigated.

physics.ins-det↗