Searcharxiv⌕ Search

arXiv subjects

Srivatsa Chakravarthi

Publications and source records attributed to Srivatsa Chakravarthi.

14 recordsLinked to original sources

20 Second Parity Lifetime in an InAs--Pb Tetron Device

A central promise of topological quantum computing is that increasing the excitation gap improves device performance significantly. Here, we experimentally validate this principle in an InAs--Pb tetron device via interferometric single-shot parity measurements. By replacing aluminum with the higher-gap superconductor lead in our superconductor-semiconductor hybrid devices, we have improved the robustness of our topological phase. In addition, to enable fast and precise bring-up at scale, we have developed an rf measurement technique that resolves low-energy wire-end states and directly measures their energy splitting with $μ\text{eV}$ precision. We employ this technique to bring up a device in a multi-tetron array and perform parity measurements of one of the tetron's hybrid nanowires (NWs). By controllably switching the wire parity, we observe $h/2e$-periodic bimodal shifts in the quantum capacitance of a quantum dot coupled to the hybrid nanowire in an interference loop. Further time-resolved measurements reveal a characteristic parity switching time of $\sim 20$ s with some instances reaching minute-scale. Such extremely long parity lifetimes are orders of magnitude longer than typical qubit operation times, which are on the order of $μ\text{s}$. Finally, we discuss potential implications for the fidelity of Pauli measurements.

cond-mat.mes-hall↗

Distinct Lifetimes for $X$ and $Z$ Loop Measurements in a Majorana Tetron Device

We present a hardware realization and measurements of a tetron qubit device in a superconductor-semiconductor heterostructure. The device architecture contains two parallel superconducting nanowires, which support four Majorana zero modes (MZMs) when tuned into the topological phase, and a trivial superconducting backbone. Two distinct readout interferometers are formed by connecting the superconducting structure to a series of quantum dots. We perform single-shot interferometric measurements of the fermion parity for the two loops, designed to implement Pauli-$X$ and $Z$ measurements of the tetron. Performing repeated single-shot measurements yields two widely separated time scales $τ_X = 14.5\pm 0.3 \, \mathrm{μs}$ and $τ_Z = 12.4\pm 0.4\, \mathrm{ms}$ for parity switches observed in the $X$ and $Z$ measurement loops, which we attribute to intra-wire parity switches and external quasiparticle poisoning, respectively. We estimate assignment errors of $\mathrm{err}^X_a=16\%$ and $\mathrm{err}^Z_a=0.5\%$ for $X$ and $Z$ measurement-based operations, respectively.

cond-mat.mes-hall↗

Roadmap to fault tolerant quantum computation using topological qubit arrays

We describe a concrete device roadmap towards a fault-tolerant quantum computing architecture based on noise-resilient, topologically protected Majorana-based qubits. Our roadmap encompasses four generations of devices: a single-qubit device that enables a measurement-based qubit benchmarking protocol; a two-qubit device that uses measurement-based braiding to perform single-qubit Clifford operations; an eight-qubit device that can be used to show an improvement of a two-qubit operation when performed on logical qubits rather than directly on physical qubits; and a topological qubit array supporting lattice surgery demonstrations on two logical qubits. Devices that enable this path require a superconductor-semiconductor heterostructure that supports a topological phase, quantum dots and coupling between those quantum dots that can create the appropriate loops for interferometric measurements, and a microwave readout system that can perform fast, low-error single-shot measurements. We describe the key design components of these qubit devices, along with the associated protocols for demonstrations of single-qubit benchmarking, Clifford gate execution, quantum error detection, and quantum error correction, which differ greatly from those in more conventional qubits. Finally, we comment on implications and advantages of this architecture for utility-scale quantum computation.

quant-ph↗

Optomechanical ring resonator for efficient microwave-optical frequency conversion

Phonons traveling in solid-state devices are emerging as a universal excitation that can couple to different physical systems through mechanical interaction. At microwave frequencies and in solid-state materials, phonons have a similar wavelength to optical photons, enabling them to interact efficiently with light and produce strong optomechanical effects that are highly desirable for classical and quantum signal transduction between optical and microwave. It becomes conceivable to build optomechanical integrated circuits (OMIC) that guide both photons and phonons and interconnect discrete photonic and phononic devices. Here, we demonstrate an OMIC including an optomechanical ring resonator (OMR), in which infrared photons and GHz phonons co-resonate to induce significantly enhanced interconversion. The OMIC is built on a hybrid platform where wide bandgap semiconductor gallium phosphide (GaP) is used as the waveguiding material and piezoelectric zinc oxide (ZnO) is used for phonon generation. The OMR features photonic and phononic quality factors of $>1\times10^5$ and $3.2\times10^3$, respectively, and resonantly enhances the optomechanical conversion between photonic modes to achieve an internal conversion efficiency $η_i=(2.1\pm0.1)%$ and a total device efficiency $η_{tot}=0.57\times10^{-6}$ at a low acoustic pump power of 1.6 mW. The efficient conversion in OMICs enables microwave-optical transduction for many applications in quantum information processing and microwave photonics.

physics.optics↗

Silicon-lattice-matched boron-doped gallium phosphide: A scalable acousto-optic platform

The compact size, scalability, and strongly confined fields in integrated photonic devices enable new functionalities in photonic networking and information processing, both classical and quantum. Gallium phosphide (GaP) is a promising material for active integrated photonics due to its high refractive index, wide band gap, strong nonlinear properties, and large acousto-optic figure of merit. In this work we demonstrate that silicon-lattice-matched boron-doped GaP (BGaP), grown at the 12-inch wafer scale, provides similar functionalities as GaP. BGaP optical resonators exhibit intrinsic quality factors exceeding 25,000 and 200,000 at visible and telecom wavelengths respectively. We further demonstrate the electromechanical generation of low-loss acoustic waves and an integrated acousto-optic (AO) modulator. High-resolution spatial and compositional mapping, combined with ab initio calculations indicate two candidates for the excess optical loss in the visible band: the silicon-GaP interface and boron dimers. These results demonstrate the promise of the BGaP material platform for the development of scalable AO technologies at telecom and provide potential pathways toward higher performance at shorter wavelengths.

physics.optics↗

Tunable phononic coupling in excitonic quantum emitters

Engineering the coupling between fundamental quantum excitations is at the heart of quantum science and technologies. A significant case is the creation of quantum light sources in which coupling between single photons and phonons can be controlled and harnessed to enable quantum information transduction. Here, we report the deterministic creation of quantum emitters featuring highly tunable coupling between excitons and phonons. The quantum emitters are formed in strain-induced quantum dots created in homobilayer semiconductor WSe2. The colocalization of quantum confined interlayer excitons and THz interlayer breathing mode phonons, which directly modulate the exciton energy, leads to a uniquely strong phonon coupling to single-photon emission. The single-photon spectrum of interlayer exciton emission features a single-photon purity >83% and multiple phonon replicas, each heralding the creation of a phonon Fock state in the quantum emitter. Owing to the vertical dipole moment of the interlayer exciton, the phonon-photon interaction is electrically tunable in a wide range, promising to reach the strong coupling regime. Our result demonstrates a new type of solid-state quantum excitonic-optomechanical system at the atomic interface that emits flying photonic qubits coupled with stationary phonons, which could be exploited for quantum transduction and interconnection.

cond-mat.mes-hall↗

Hybrid Integration of GaP Photonic Crystal Cavities with Silicon-Vacancy Centers in Diamond by Stamp-Transfer

Optically addressable solid-state defects are emerging as one of the most promising qubit platforms for quantum networks. Maximizing photon-defect interaction by nanophotonic cavity coupling is key to network efficiency. We demonstrate fabrication of gallium phosphide 1-D photonic crystal waveguide cavities on a silicon oxide carrier and subsequent integration with implanted silicon-vacancy (SiV) centers in diamond using a stamp-transfer technique. The stamping process avoids diamond etching and allows fine-tuning of the cavities prior to integration. After transfer to diamond, we measure cavity quality factors ($Q$) of up to 8900 and perform resonant excitation of single SiV centers coupled to these cavities. For a cavity with $Q$ of 4100, we observe a three-fold lifetime reduction on-resonance, corresponding to a maximum potential cooperativity of $C = 2$. These results indicate promise for high photon-defect interaction in a platform which avoids fabrication of the quantum defect host crystal.

quant-ph↗

Triply-Resonant Sum Frequency Conversion with Gallium Phosphide Ring Resonators

We demonstrate quasi-phase matched, triply-resonant sum frequency conversion in 10.6-um-diameter integrated gallium phosphide ring resonators. A small-signal, waveguide-to-waveguide power conversion efficiency of 8%/mW is measured for conversion from telecom (1536 nm) and near infrared (1117 nm) to visible (647 nm) wavelengths with an absolute power conversion efficiency of 6.3% measured at saturation pump power. For the complementary difference frequency generation process, a single photon conversion efficiency of 7.2%/mW from visible to telecom is projected for resonators with optimized coupling. Efficient conversion from visible to telecom will facilitate long-distance transmission of spin-entangled photons from solid-state emitters such as the diamond NV center, allowing long-distance entanglement for quantum networks.

physics.optics↗

Target-wavelength-trimmed second harmonic generation with gallium phosphide-on-nitride ring resonators

We demonstrate post-fabrication target-wavelength trimming with a gallium phosphide on silicon nitride integrated photonic platform using controlled electron-beam exposure of hydrogen silsesquioxane cladding. A linear relationship between the electron-beam exposure dose and resonant wavelength red-shift enables deterministic, individual trimming of multiple devices on the same chip to within 30 pm of a single target wavelength. Second harmonic generation from telecom to near infrared at a target wavelength is shown in multiple devices with quality factors on the order of $10^4$. Post-fabrication tuning is an essential tool for targeted wavelength applications including quantum frequency conversion

physics.optics↗

Impact of surface and laser-induced noise on the spectral stability of implanted nitrogen-vacancy centers in diamond

Scalable realizations of quantum network technologies utilizing the nitrogen vacancy center in diamond require creation of optically coherent NV centers in close proximity to a surface for coupling to optical structures. We create single NV centers by $^{15}$N ion implantation and high-temperature vacuum annealing. Origin of the NV centers is established by optically detected magnetic resonance spectroscopy for nitrogen isotope identification. Near lifetime-limited optical linewidths ($<$ 60 MHz) are observed for the majority of the normal-implant (7$^\circ$, $\approx$ 100 nm deep) $^{15}$NV centers. Long-term stability of the NV$^-$ charge state and emission frequency is demonstrated. The effect of NV-surface interaction is investigated by varying the implantation angle for a fixed ion-energy, and thus lattice damage profile. In contrast to the normal implant condition, NVs from an oblique-implant (85$^\circ$, $\approx$ 20 nm deep) exhibit substantially reduced optical coherence. Our results imply that the surface is a larger source of perturbation than implantation damage for shallow implanted NVs. This work supports the viability of ion implantation for formation of optically stable NV centers. However, careful surface preparation will be necessary for scalable defect engineering.

cond-mat.mes-hall↗

Inverse-designed photon extractors for optically addressable defect qubits

Solid-state defect qubit systems with spin-photon interfaces show great promise for quantum information and metrology applications. Photon collection efficiency, however, presents a major challenge for defect qubits in high refractive index host materials. Inverse-design optimization of photonic devices enables unprecedented flexibility in tailoring critical parameters of a spin-photon interface including spectral response, photon polarization and collection mode. Further, the design process can incorporate additional constraints, such as fabrication tolerance and material processing limitations. Here we design and demonstrate a compact hybrid gallium phosphide on diamond inverse-design planar dielectric structure coupled to single near-surface nitrogen-vacancy centers formed by implantation and annealing. We observe device operation near the theoretical limit and measure up to a 14-fold broadband enhancement in photon extraction efficiency. We expect that such inverse-designed devices will enable realization of scalable arrays of single-photon emitters, rapid characterization of new quantum emitters, sensing and efficient heralded entanglement schemes.

physics.app-ph↗

A window into NV center kinetics via repeated annealing and spatial tracking of thousands of individual NV centers

Knowledge of the nitrogen-vacancy center formation kinetics in diamond is critical to engineering sensors and quantum information devices based on this defect. Here we utilize the longitudinal tracking of single NV centers to elucidate NV defect kinetics during high-temperature annealing from 800-1100 $^\circ$C in high-purity chemical-vapor-deposition diamond. We observe three phenomena which can coexist: NV formation, NV quenching, and NV orientation changes. Of relevance to NV-based applications, a 6 to 24-fold enhancement in the NV density, in the absence of sample irradiation, is observed by annealing at 980 $^\circ$C, and NV orientation changes are observed at 1050 $^\circ$C. With respect to the fundamental understanding of defect kinetics in ultra-pure diamond, our results indicate a significant vacancy source can be activated for NV creation between 950-980 $^\circ$C and suggests that native hydrogen from NVH$_y$ complexes plays a dominant role in NV quenching, in agreement with recent {\it ab initio} calculations. Finally, the direct observation of orientation changes allows us to estimate an NV diffusion barrier of 5.1~eV.

cond-mat.mtrl-sci↗

Frequency control of single quantum emitters in integrated photonic circuits

Generating entangled graph states of qubits requires high entanglement rates, with efficient detection of multiple indistinguishable photons from separate qubits. Integrating defect-based qubits into photonic devices results in an enhanced photon collection efficiency, however, typically at the cost of a reduced defect emission energy homogeneity. Here, we demonstrate that the reduction in defect homogeneity in an integrated device can be partially offset by electric field tuning. Using photonic device-coupled implanted nitrogen vacancy (NV) centers in a GaP-on-diamond platform, we demonstrate large field-dependent tuning ranges and partial stabilization of defect emission energies. These results address some of the challenges of chip-scale entanglement generation.

physics.app-ph↗

A Large-Scale GaP-on-Diamond Integrated Photonics Platform for NV Center-Based Quantum Information

We present chip-scale transmission measurements for three key components of a GaP-on-diamond integrated photonics platform: waveguide-coupled disk resonators, directional couplers, and grating couplers. We also present proof-of-principle measurements demonstrating nitrogen-vacancy (NV) center emission coupled into selected devices. The demonstrated device performance, uniformity and yield place the platform in a strong position to realize measurement-based quantum information protocols utilizing the NV center in diamond.

cond-mat.mes-hall↗