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arXiv · 2212.04670

Hybrid Integration of GaP Photonic Crystal Cavities with Silicon-Vacancy Centers in Diamond by Stamp-Transfer

Srivatsa Chakravarthi·Nicholas S. Yama·Alex Abulnaga·Ding Huang·Christian Pederson·Karine Hestroffer·Fariba Hatami·Nathalie P. de Leon·Kai-Mei C. Fu
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Abstract

Optically addressable solid-state defects are emerging as one of the most promising qubit platforms for quantum networks. Maximizing photon-defect interaction by nanophotonic cavity coupling is key to network efficiency. We demonstrate fabrication of gallium phosphide 1-D photonic crystal waveguide cavities on a silicon oxide carrier and subsequent integration with implanted silicon-vacancy (SiV) centers in diamond using a stamp-transfer technique. The stamping process avoids diamond etching and allows fine-tuning of the cavities prior to integration. After transfer to diamond, we measure cavity quality factors ($Q$) of up to 8900 and perform resonant excitation of single SiV centers coupled to these cavities. For a cavity with $Q$ of 4100, we observe a three-fold lifetime reduction on-resonance, corresponding to a maximum potential cooperativity of $C = 2$. These results indicate promise for high photon-defect interaction in a platform which avoids fabrication of the quantum defect host crystal.

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Srivatsa Chakravarthi, Nicholas S. Yama, Alex Abulnaga, Ding Huang, Christian Pederson, Karine Hestroffer, Fariba Hatami, Nathalie P. de Leon, Kai-Mei C. Fu. 2022-12-09. Hybrid Integration of GaP Photonic Crystal Cavities with Silicon-Vacancy Centers in Diamond by Stamp-Transfer. https://doi.org/10.1021/acs.nanolett.2c04890

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