SearcharxivSearch

arXiv subjects

Stefania Riva

Publications and source records attributed to Stefania Riva.

2 recordsLinked to original sources

Resolving the energy alignment between methylammonium lead iodide and C60: an in-situ photoelectron spectroscopy study

Understanding and controlling the energy level alignment at interfaces between lead halide perovskites and electron transport layers is crucial for optimizing perovskite-based devices such as solar cells. In this work, we investigated the energy level alignment of C60 on in-situ cleaved MAPbI3 single crystals in multiple repeat experiments using photoelectron spectroscopy aiming to resolve inconsistencies reported in earlier studies. Our results show that both materials remain chemically stable upon interface formation, in contrast to the strong reactions typically seen when metals are evaporated on perovskite surfaces. By analyzing the Pb 4f and C 1s binding energies in detail, we determined that C60 consistently exhibits a downward energy shift toward MAPbI3, which works against efficient charge extraction. The magnitude of this shift, however, varies between different sample positions, highlighting that small variations in sample surfaces can lead to significant differences in energetic alignment. At higher C60 coverages of more than 5 monolayers, a constant HOMO-valence band offset of 0.52 eV was obtained. These findings underscore the decisive role of surface chemistry on interfacial energetics, explain performance variability in perovskite devices, and demonstrate the need to control and accurately measure surface properties. Furthermore, the observed energetic alignment can explain why further interface modification by charge blocking layers or surface passivation is needed for optimized device efficiencies.

cond-mat.mtrl-sci

Charge Transport and Defects in Sulfur-Deficient Chalcogenide Perovskite BaZrS$_3$

Exploring the conduction mechanism in the chalcogenide perovskite BaZrS$_3$ is of significant interest due to its potential suitability as a top absorber layer in silicon-based tandem solar cells and other optoelectronic applications. Theoretical and experimental studies anticipate native ambipolar doping in BaZrS$_3$, although experimental validation remains limited. This study reveals a transition from highly insulating behavior to n-type conductivity in BaZrS$_3$ through annealing in an S-poor environment. BaZrS$_3$ thin films are synthesized $\textit{via}$ a two step process: co-sputtering of Ba-Zr followed by sulfurization at 600 $^{\circ}$C, and subsequent annealing in high vacuum. UV-Vis measurement reveal a red-shift in the absorption edge concurrent with sample color darkening after annealing. The increase in defect density with vacuum annealing, coupled with low activation energy and n-type character of defects, strongly suggests that sulfur vacancies (V$_{\mathrm{S}}$) are responsible, in agreement with theoretical predictions. The shift of the Fermi level towards conduction band minimum, quantified by Hard X-ray Photoelectron Spectroscopy (Ga K$α$, 9.25 keV), further corroborates the induced n-type of conductivity in annealed samples. Our findings indicate that vacuum annealing induces V$_{\mathrm{S}}$ defects that dominate the charge transport, thereby making BaZrS$_3$ an n-type semiconductor under S-poor conditions. This study offers crucial insights into understanding the defect properties of BaZrS$_3$, facilitating further improvements for its use in solar cell applications.

cond-mat.mtrl-sci