arXiv subjects

Stephane Fusil

Publications and source records attributed to Stephane Fusil.

6 recordsLinked to original sources

arXiv2025

Phonon-tunable THz magnonic emission in multiferroic heterostructures

Collective excitations such as magnons and polar phonons provide natural access to the terahertz (THz) regime, but efficient generation and tunability remain elusive. Multiferroic BiFeO3 combines both orders at room temperature, offering a unique platform for narrowband THz emission. Here, we achieve efficient sub-bandgap optical rectification of coupled phonon-polaritons near 2 THz in bare epitaxial thin films. In Pt/BiFeO3 bilayers, we demonstrate that coupling the electromagnon branch with ultrafast strain waves, optically generated in Pt layers with various thicknesses, can produce tunable and narrowband emission between 0.4-0.8 THz. These results uncover the intertwined role of phonons, magnons, and magneto-acoustic dynamics in antiferromagnetic multiferroics, and establish these hybrid platforms as versatile engineered narrowband THz sources.

cond-mat.mes-hall↗

arXiv2025

Light-induced photomechanical patterning of ferroelectric polarization

Tailoring at will polar textures in ferroelectrics is critical for the development of nanoscale electronics and functional oxide technologies. Freestanding ferroelectric membranes have enabled studies of strain-induced polarization responses, but the control over membrane shape and local polarization typically remains limited to spontaneous buckling or uniaxial mechanical deformations. In this work, we employ a versatile photosensitive-polymer patterning approach to impose programmable bending strain profiles in ferroelectric membranes. Using BaTiO3 as a model system, we demonstrate deterministic 90{\deg} polarization rotation driven by engineered in-plane strain, and 180{\deg} polarization reversal arising from flexoelectric coupling through a controlled strain gradient. These results establish this programmable bending as a powerful approach to investigate strain-dependent domain structures, leverage flexoelectric effects, and engineer custom ferroelectric landscapes across a wide range of oxide membranes.

cond-mat.mtrl-sci↗

arXiv2023

Voltage-based magnetization switching and reading in magnetoelectric spin-orbit nanodevices

As CMOS technologies face challenges in dimensional and voltage scaling, the demand for novel logic devices has never been greater, with spin-based devices offering scaling potential, at the cost of significantly high switching energies. Alternatively, magnetoelectric materials are predicted to enable low-power magnetization control, a solution with limited device-level results. Here, we demonstrate voltage-based magnetization switching and reading in nanodevices at room temperature, enabled by exchange coupling between multiferroic BiFeO$_3$ and ferromagnetic CoFe, for writing, and spin-to-charge current conversion between CoFe and Pt, for reading. We show that upon the electrical switching of the BiFeO$_3$, the magnetization of the CoFe can be reversed, giving rise to different voltage outputs. Through additional microscopy techniques, magnetization reversal is linked with the polarization state and antiferromagnetic cycloid propagation direction in the BiFeO$_3$. This study constitutes the building block for magnetoelectric spin-orbit logic, opening a new avenue for low-power beyond-CMOS technologies.

cond-mat.mes-hall↗

arXiv2007

Room temperature coexistence of large electric polarization and magnetic order in BiFeO3 single crystals

From an experimental point of view, room temperature ferroelectricity in BiFeO3 is raising many questions. Electric measurements made a long time ago on solid-solutions of BiFeO3 with Pb(Ti,Zr)O3 indicate that a spontaneous electric polarization exists in BiFeO3 below the Curie temperature TC=1143K. Yet in most reported works, the synthesised samples are too conductive at room temperature to get a clear polarization loop in the bulk without any effects of extrinsic physical or chemical parameters. Surprisingly, up to now there has been no report of a P(E) (polarization versus electric field) loop at room temperature on single crystals of BiFeO3. We describe here our procedure to synthesize ceramics and to grow good quality sizeable single crystals by a flux method. We demonstrate that BiFeO3 is indeed ferroelectric at room-temperature through evidence by Piezoresponse Force Microscopy and P(E) loops. The polarization is found to be large, around 60 microC/cm2, a value that has only been reached in thin films. Magnetic measurements using a SQUID magnetometer and Mossbauer spectroscopy are also presented. The latter confirms the results of NMR measurements concerning the anisotropy of the hyperfine field attributed to the magnetic cycloidal structure.

cond-mat.mtrl-sci↗

arXiv2006

Multiferroic tunnel junctions

Multiferroics are singular materials that can display simultaneously electric and magnetic orders. Some of them can be ferroelectric and ferromagnetic and, for example, provide the unique opportunity of encoding information independently in electric polarization and magnetization to obtain four different logic states. However, schemes allowing a simple electrical readout of these different states have not been demonstrated so far. In this article, we show that this can be achieved if a multiferroic material is used as the tunnel barrier in a magnetic tunnel junction. We demonstrate that thin films of ferromagnetic-ferroelectric La0.1Bi0.9MnO3 (LBMO) retain both ferroic properties down to a thickness of only 2 nm. We have used such films as spin-filtering tunnel barriers the magnetization and electric polarization of which can be switched independently. In that case, the tunnel current across the structure is controlled by both the magnetic and ferroelectric configuration of the barrier, which gives rise to four distinct resistance states. This can be explained by the combination of spin filtering by the ferromagnetic LBMO barrier and the partial charge screening of electrical charges at the barrier/electrode interfaces due to ferroelectricity. We anticipate our results to be a starting point for more studies on the interplay between ferroelectricity and spin-dependent tunneling, and for the use of nanometric multiferroic elements in prototype devices. On a wider perspective, they may open the way towards novel reconfigurable logic spintronics architectures and to electrically controlled readout in quantum computing schemes using the spin-filter effect.

cond-mat.mtrl-sci↗

arXiv2005

Spinel ferrites: old materials bring new opportunities for spintronics

Over the past few years, intensive studies of ultrathin epitaxial films of perovskite oxides have often revealed exciting properties like giant magnetoresistive tunnelling and electric field effects. Spinel oxides appear as even more versatile due to their more complex structure and the resulting many degrees of freedom. Here we show that the epitaxial growth of nanometric NiFe2O4 films onto perovskite substrates allows the stabilization of novel ferrite phases with properties dramatically differing from bulk ones. Indeed, NiFe2O4 films few nanometres thick have a saturation magnetization at least twice that of the bulk compound and their resistivity can be tuned by orders of magnitude, depending on the growth conditions. By integrating such thin NiFe2O4 layers into spin-dependent tunnelling heterostructures, we demonstrate that this versatile material can be useful for spintronics, either as a conductive electrode in magnetic tunnel junctions or as a spin-filtering insulating barrier in the little explored type of tunnel junction called spin-filter. Our findings are thus opening the way for the realisation of monolithic spintronics architectures integrating several layers of a single material, where the layers are functionalised in a controlled manner.

cond-mat.mtrl-sci↗