arXiv subjects

Stephen Goodnick

Publications and source records attributed to Stephen Goodnick.

4 recordsLinked to original sources

arXiv2026

Diamond Diode for Extreme Venus Environments

A diamond Schottky PIN diode (SPIND) with the highest reported current density to date of ~116 kA/cm2 is demonstrated carrying a total current of ~1.3 A through a 50 micron wide pseudo-vertical diode structure. The diamond SPIND also provides a maximum power handling capacity of 1.85 MW/cm2 and a low specific on-resistance Ron,S of 0.05 mOhm-cm2 at a forward bias of ~16 V. The diamond SPIN diode also shows excellent rectification characteristics with a current on-off ratio of ~6e12. An analytical model including thermionic emission and space charge limited current is presented together with Silvaco ATLAS TCAD simulations, to accurately reproduce the experimental J-V characteristics using multiple single trap levels and other physical models emulating a real device. Theoretical analysis from the analytical models in conjunction with ATLAS simulations shows that further improvement in the device turn on voltage and Ron,S can be achieved by reducing the defect density and contact resistance in order to approach the ultimate performance in the Mott-Gurney space charge limited current regime

cond-mat.mtrl-sci↗

arXiv2023

Hydrogen-induced degradation dynamics in silicon heterojunction solar cells via machine learning

Among silicon-based solar cells, heterojunction cells hold the world efficiency record. However, their market acceptance is hindered by an initial 0.5\% per year degradation of their open circuit voltage which doubles the overall cell degradation rate. Here, we study the performance degradation of crystalline-Si/amorphous-Si:H heterojunction stacks. First, we experimentally measure the interface defect density over a year, the primary driver of the degradation. Second, we develop SolDeg, a multiscale, hierarchical simulator to analyze this degradation by combining Machine Learning, Molecular Dynamics, Density Functional Theory, and Nudged Elastic Band methods with analytical modeling. We discover that the chemical potential for mobile hydrogen develops a gradient, forcing the hydrogen to drift from the interface, leaving behind recombination-active defects. We find quantitative correspondence between the calculated and experimentally determined defect generation dynamics. Finally, we propose a reversed Si-density gradient architecture for the amorphous-Si:H layer that promises to reduce the initial open circuit voltage degradation from 0.5\% per year to 0.1\% per year.

cond-mat.mtrl-sci↗

arXiv2023

Low-Frequency Electronic Noise in the Aluminum Gallium Oxide Schottky Barrier Diodes

We report on the low-frequency electronic noise in (Al$_x$Ga$_{1-x}$)$_2$O$_3$ Schottky barrier diodes. The noise spectral density reveals 1/f dependence, characteristic of the flicker noise, with superimposed Lorentzian bulges at the intermediate current levels (f is the frequency). The normalized noise spectral density in such diodes was determined to be on the order of 10$^{-12}$ cm$^2$/Hz (f=10 Hz) at 1 A/cm$^2$ current density. At the intermediate current regime, we observed the random telegraph signal noise, correlated with the appearance of Lorentzian bulges in the noise spectrum. The random telegraph signal noise was attributed to the defects near the Schottky barrier. The defects can affect the local electric field and the potential barrier, and correspondingly, impact the electric current. The obtained results help to understand noise in Schottky barrier diodes made of ultra-wide-band-gap semiconductors and can be used for the material and device quality assessment.

cond-mat.mtrl-sci↗

arXiv2021

Excess Noise in High-Current Diamond Diodes -- Physical Mechanisms and Implications for Reliability Assessment

We report results of an investigation of low-frequency excess noise in high-current diamond diodes. It was found that the electronic excess noise of the diamond diodes is dominated by generation - recombination noise, which reveals itself either as Lorentzian spectral features or as a 1/f noise spectrum (f is the frequency). The generation - recombination bulges are characteristic for diamond diodes with lower turn-on voltages. The noise spectral density dependence on forward current, I, reveals three distinctive regions in all examined devices - it scales as I^2 at the low (I<10 uA) and high (I>10 mA) currents, and, rather unusually, remain nearly constant at the intermediate current range. The characteristic trap time constants, extracted from the noise data, reveal a uniquely strong dependence on current. Interestingly, the performance of the diamond diodes improves with increasing temperature. The obtained results are important for development of noise spectroscopy-based approaches for device reliability assessment for the high-power diamond electronics.

physics.app-ph↗