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Steven R. Spurgeon

Publications and source records attributed to Steven R. Spurgeon.

36 records · Page 2Linked to original sources

Oxygen Reduction Electrocatalysis with Epitaxially Grown Spinel MnFe$_{2}$O$_{4}$ and Fe$_{3}$O$_{4}$

Nanocrystalline MnFe$_{2}$O$_{4}$ has shown promise as a catalyst for the oxygen reduction reaction (ORR) in alkaline solutions, but the material has been lightly studied as highly ordered thin film catalysts. To examine the role of surface termination and Mn and Fe site occupancy, epitaxial MnFe$_{2}$O$_{4}$ and Fe$_{3}$O$_{4}$ spinel oxide films were grown on (001) and (111) oriented Nb:SrTiO$_{3}$ perovskite substrates using molecular beam epitaxy and studied as electrocatalysts for the oxygen reduction reaction (ORR). HRXRD and XPS show synthesis of pure phase materials while STEM and RHEED analysis demonstrate island-like growth of (111) surface terminated pyramids on both (001) and (111) oriented substrates, consistent with the literature and attributed to lattice mismatch between the spinel films and perovskite substrate. Cyclic voltammograms under an N$_{2}$ atmosphere revealed distinct redox features for Mn and Fe surface termination based on comparison of MnFe$_{2}$O$_{4}$ and Fe$_{3}$O$_{4}$. Under O$_{2}$ atmosphere, electrocatalytic reduction of oxygen was observed at both Mn and Fe redox features; however, diffusion limited current was only achieved at potentials consistent with Fe reduction. This result contrasts with that of nanocrystalline MnFe$_{2}$O$_{4}$ reported in the literature where diffusion limited current is achieved with Mn-based catalysis. This difference is attributed to a low density of Mn surface termination, as determined by the integration of current from CVs collected under N$_{2}$, in addition to low conductivity through the MnFe$_{2}$O$_{4}$ film due to the degree of inversion. Such low densities are attributed to the synthetic method and island-like growth pattern and highlight challenges in studying ORR catalysis with single-crystal spinel materials.

cond-mat.mtrl-sci↗

An Automated Scanning Transmission Electron Microscope Guided by Sparse Data Analytics

Artificial intelligence (AI) promises to reshape scientific inquiry and enable breakthrough discoveries in areas such as energy storage, quantum computing, and biomedicine. Scanning transmission electron microscopy (STEM), a cornerstone of the study of chemical and materials systems, stands to benefit greatly from AI-driven automation. However, present barriers to low-level instrument control, as well as generalizable and interpretable feature detection, make truly automated microscopy impractical. Here, we discuss the design of a closed-loop instrument control platform guided by emerging sparse data analytics. We demonstrate how a centralized controller, informed by machine learning combining limited $a$ $priori$ knowledge and task-based discrimination, can drive on-the-fly experimental decision-making. This platform unlocks practical, automated analysis of a variety of material features, enabling new high-throughput and statistical studies.

cond-mat.mtrl-sci↗

Thickness Dependent OER Electrocatalysis of Epitaxial LaFeO$_{3}$ Thin Films

Transition metal oxides have long been an area of interest for water electrocatalysis through the oxygen evolution and oxygen reduction reactions. Iron oxides, such as LaFeO$_{3}$, are particularly promising due to the favorable energy alignment of the valence and conduction bands comprised of Fe$^{3+}$ cations and the visible light band gap of such materials. In this work, we examine the role of band alignment on the electrocatalytic oxygen evolution reaction (OER) in the intrinsic semiconductor LaFeO$_{3}$ by growing epitaxial films of varying thicknesses on Nb-doped SrTiO$_{3}$. Using cyclic voltammetry and electrochemical impedance spectroscopy, we find that there is a strong thickness dependence on the efficiency of electrocatalysis for OER. These measurements are understood based on interfacial band alignment in the system as confirmed by layer-resolved electron energy loss spectroscopy and electrochemical Mott-Schottky measurements. Our results demonstrate the importance of band engineering for the rational design of thin film electrocatalysts for renewable energy sources.

cond-mat.mtrl-sci↗

Design of a Graphical User Interface for Few-Shot Machine Learning Classification of Electron Microscopy Data

The recent growth in data volumes produced by modern electron microscopes requires rapid, scalable, and flexible approaches to image segmentation and analysis. Few-shot machine learning, which can richly classify images from a handful of user-provided examples, is a promising route to high-throughput analysis. However, current command-line implementations of such approaches can be slow and unintuitive to use, lacking the real-time feedback necessary to perform effective classification. Here we report on the development of a Python-based graphical user interface that enables end users to easily conduct and visualize the output of few-shot learning models. This interface is lightweight and can be hosted locally or on the web, providing the opportunity to reproducibly conduct, share, and crowd-source few-shot analyses.

cond-mat.mtrl-sci↗

Percolation of Ion-Irradiation-Induced Disorder in Complex Oxide Interfaces

Mastery of order-disorder processes in highly non-equilibrium nanostructured oxides has significant implications for the development of emerging energy technologies. However, we are presently limited in our ability to quantify and harness these processes at high spatial, chemical, and temporal resolution, particularly in extreme environments. Here we describe the percolation of disorder at the model oxide interface LaMnO$_3$ / SrTiO$_3$, which we visualize during in situ ion irradiation in the transmission electron microscope. We observe the formation of a network of disorder during the initial stages of ion irradiation and track the global progression of the system to full disorder. We couple these measurements with detailed structural and chemical probes, examining possible underlying defect mechanisms responsible for this unique percolative behavior.

cond-mat.mtrl-sci↗

Order-Disorder Behavior at Thin Film Oxide Interfaces

Order-disorder processes fundamentally determine the structure and properties of many important oxide systems for energy and computing applications. While these processes have been intensively studied in bulk materials, they are less investigated and understood for nanostructured oxides in highly non-equilibrium conditions. These systems can now be realized through a range of deposition techniques and probed at exceptional spatial and chemical resolution, leading to a greater focus on interface dynamics. Here we survey a selection of recent studies of order-disorder behavior at thin film oxide interfaces, with a particular emphasis on the emergence of order during synthesis and disorder in extreme irradiation environments. We summarize key trends and identify directions for future study in this growing research area.

cond-mat.mtrl-sci↗

Scanning Transmission Electron Microscopy of Oxide Interfaces and Heterostructures

Thin film oxides are a source of endless fascination for the materials scientist. These materials are highly flexible, can be integrated into almost limitless combinations, and exhibit many useful functionalities for device applications. While precision synthesis techniques, such as molecular beam epitaxy (MBE) and pulsed laser deposition (PLD), provide a high degree of control over these systems, there remains a disconnect between ideal and realized materials. Because thin films adopt structures and chemistries distinct from their bulk counterparts, it is often difficult to predict what properties will emerge. The complex energy landscape of the synthesis process is also strongly influenced by non-equilibrium growth conditions imposed by the substrate, as well as the kinetics of thin film crystallization and fluctuations in process variables, all of which can lead to significant deviations from targeted outcomes. High-resolution structural and chemical characterization techniques, as described in this volume, are needed to verify growth models, bound theoretical calculations, and guide materials design. While many characterization options exist, most are spatially-averaged or indirect, providing only partial insight into the complex behavior of these systems. Over the past several decades, scanning transmission electron microscopy (STEM) has become a cornerstone of oxide heterostructure characterization owing to its ability to simultaneously resolve structure, chemistry, and defects at the highest spatial resolution. STEM methods are an essential complement to averaged scattering techniques, offering a direct picture of resulting materials that can inform and refine the growth process to achieve targeted properties. There is arguably no other technique that can provide such a broad array of information at the atomic-scale, all within a single experimental session.

cond-mat.mtrl-sci↗

Asymmetric Lattice Disorder Induced at Oxide Interfaces

Control of order-disorder phase transitions is a fundamental materials science challenge, underpinning the development of energy storage technologies such as solid oxide fuel cells and batteries, ultra-high temperature ceramics, and durable nuclear waste forms. At present, the development of promising complex oxides for these applications is hindered by a poor understanding of how interfaces affect lattice disordering processes and defect transport. Here we explore the evolution of local disorder in ion-irradiated La$_2$Ti$_2$O$_7$ / SrTiO$_3$ thin film heterostructures using a combination of high-resolution scanning transmission electron microscopy (STEM), position-averaged convergent beam electron diffraction (PACBED), electron energy loss spectroscopy (STEM-EELS), and \textit{ab initio} theory calculations. We observe highly non-uniform lattice disordering driven by asymmetric oxygen vacancy formation across the interface. Our calculations indicate that this asymmetry results from differences in the polyhedral connectivity and vacancy formation energies of the two interface components, suggesting ways to manipulate lattice disorder in functional oxide heterostructures.

cond-mat.mtrl-sci↗

Microscopic model of stacking-fault potential and exciton wave function in GaAs

Two-dimensional stacking fault defects embedded in a bulk crystal can provide a homogeneous trapping potential for carriers and excitons. Here we utilize state-of-the-art structural imaging coupled with density functional and effective-mass theory to build a microscopic model of the stacking-fault exciton. The diamagnetic shift and exciton dipole moment at different magnetic fields are calculated and compared with the experimental photoluminescence of excitons bound to a single stacking fault in GaAs. The model is used to further provide insight into the properties of excitons bound to the double-well potential formed by stacking fault pairs. This microscopic exciton model can be used as an input into models which include exciton-exciton interactions to determine the excitonic phases accessible in this system.

cond-mat.mes-hall↗

Nanoscale Oxygen Defect Gradients in the Actinide Oxides

Oxygen defects govern the behavior of a range of materials spanning catalysis, quantum computing, and nuclear energy. Understanding and controlling these defects is particularly important for the safe use, storage, and disposal of actinide oxides in the nuclear fuel cycle, since their oxidation state influences fuel lifetimes, stability, and the contamination of groundwater. However, poorly understood nanoscale fluctuations in these systems can lead to significant deviations from bulk oxidation behavior. Here we describe the first use of aberration-corrected scanning transmission electron microscopy and electron energy loss spectroscopy to resolve changes in the local oxygen defect environment in UO$_2$ surfaces. We observe large image contrast and spectral changes that reflect the presence of sizable gradients in interstitial oxygen content at the nanoscale, which we quantify through first principles calculations and image simulations. These findings reveal an unprecedented level of excess oxygen incorporated in a complex near-surface spatial distribution, offering new insight into defect formation pathways and kinetics during UO$_2$ oxidation.

cond-mat.mtrl-sci↗

Effect of structure and composition on the electronic excitation induced amorphization of La$_2$Ti$_{2-x}$Zr$_x$O$_7$ ceramics

Understanding the response of ceramics operating in extreme environments is of interest for a variety of applications. Ab initio molecular dynamic simulations have been used to investigate the effect of structure and $B$-site (=Ti, Zr) cation composition of lanthanum-based oxides (La$_2$$B_2$O$_7$) on electronic-excitation-induced amorphization. We find that the amorphous transition in monoclinic layered perovskite La$_2$Ti$_2$O$_7$ occurs for a lower degree of electronic excitation than for cubic pyrochlore La$_2$Zr$_2$O$_7$. While in each case the formation of O$_2$-like molecules drives the structure to an amorphous state, an analysis of the polyhedral connection network reveals that the rotation of TiO$_6$ octahedra in the monoclinic phase can promote such molecule formation, while such octahedral rotation is not possible in the cubic phase. However, once the symmetry of the cubic structure is broken by substituting Ti for Zr, it becomes less resistant to amorphization. A compound made of 50% Ti and 50% Zr (La$_2$TiZrO$_7$) is found to be more resistant in the monoclinic than in the cubic phase, which may be related to the lower bandgap of the cubic phase. These results illustrate the complex interplay of structure and composition that give rise to the radiation resistance of these important functional materials.

cond-mat.mtrl-sci↗

Ionic Tuning of Cobaltites at the Nanoscale

Control of materials through custom design of ionic distributions represents a powerful new approach to develop future technologies ranging from spintronic logic and memory devices to energy storage. Perovskites have shown particular promise for ionic devices due to their high ion mobility and sensitivity to chemical stoichiometry. In this work, we demonstrate a solid-state approach to control of ionic distributions in (La,Sr)CoO$_{3}$ thin films. Depositing a Gd capping layer on the perovskite film, oxygen is controllably extracted from the structure, up-to 0.5 O/u.c. throughout the entire 36 nm thickness. Commensurate with the oxygen extraction, the Co valence state and saturation magnetization show a smooth continuous variation. In contrast, magnetoresistance measurements show no-change in the magnetic anisotropy and a rapid increase in the resistivity over the same range of oxygen stoichiometry. These results suggest significant phase separation, with metallic ferromagnetic regions and oxygen-deficient, insulating, non-ferromagnetic regions, forming percolated networks. Indeed, X-ray diffraction identifies oxygen-vacancy ordering, including transformation to a brownmillerite crystal structure. The unexpected transformation to the brownmillerite phase at ambient temperature is further confirmed by high-resolution scanning transmission electron microscopy which shows significant structural - and correspondingly chemical - phase separation. This work demonstrates room-temperature ionic control of magnetism, electrical resistivity, and crystalline structure in a 36 nm thick film, presenting new opportunities for ionic devices that leverage multiple material functionalities.

cond-mat.mtrl-sci↗

Interface properties and built-in potential profile of a LaCrO$_3$/SrTiO$_3$ superlattice determined by standing-wave excited photoemission spectroscopy

LaCrO$_3$ (LCO) / SrTiO$_3$ (STO) heterojunctions are intriguing due to a polar discontinuity along (001), two distinct and controllable interface structures [(LaO)$^+$/(TiO$_2$)$^0$ and (SrO)$^0$/(CrO$_2$)$^-$], and interface-induced polarization. In this study, we have used soft- and hard x-ray standing-wave excited photoemission spectroscopy (SW-XPS) to generate a quantitative determination of the elemental depth profiles and interface properties, band alignments, and the depth distribution of the interface-induced built-in potentials in the two constituent oxides. We observe an alternating charged interface configuration: a positively charged (LaO)$^+$/(TiO$_2$)$^0$ intermediate layer at the LCO$_\textbf{top}$/STO$_\textbf{bottom}$ interface and a negatively charged (SrO)$^0$/(CrO$_2$)$^-$ intermediate layer at the STO$_\textbf{top}$/LCO$_\textbf{bottom}$ interface. Using core-level SW data, we have determined the depth distribution of species, including through the interfaces, and these results are in excellent agreement with scanning transmission electron microscopy and electron energy loss spectroscopy (STEM-EELS) mapping of local structure and composition. SW-XPS also enabled deconvolution of the LCO-contributed and STO- contributed matrix-element-weighted density of states (MEWDOSs) from the valence band (VB) spectra for the LCO/STO superlattice (SL). Monitoring the VB edges of the deconvoluted MEWDOS shifts with a change in probing profile, the alternating charge- induced built-in potentials are observed in both constituent oxides. Finally, using a two-step simulation approach involving first core-level binding energy shifts and then valence-band modeling, the built-in potential gradients across the SL are resolved in detail and represented by the depth distribution of VB edges.

cond-mat.mtrl-sci↗

The Onset of Phase Separation in the Double Perovskite Oxide La$_2$MnNiO$_6$

Identification of kinetic and thermodynamic factors that control crystal nucleation and growth represents a central challenge in materials synthesis. Here we report that apparently defect-free growth of La$_2$MnNiO$_6$ (LMNO) thin films supported on SrTiO$_3$ (STO) proceeds up to $1-5$ nm, after which it is disrupted by precipitation of NiO phases. Local geometric phase analysis and ensemble-averaged X-ray reciprocal space mapping show no change in the film strain away from the interface, indicating that mechanisms other than strain relaxation induce the formation of the NiO phases. $Ab \, initio$ simulations suggest that oxygen vacancies become more likely with increasing thickness, due to the electrostatic potential build-up associated with the polarity mismatch at the film-substrate interface, this, in turn, promotes the formation of Ni-rich regions. These results suggest that the precipitate-free region could be extended further by increasing the oxygen chemical potential through the use of an elevated oxygen pressure or by incorporating electron redistributing dopants to suppress the built-in potential.

cond-mat.mtrl-sci↗

Dynamic Interface Rearrangement in LaFeO$_3$ / $n$-SrTiO$_3$ Heterojunctions

Thin film synthesis methods developed over the past decades have unlocked emergent interface properties ranging from conductivity to ferroelectricity. However, our attempts to exercise precise control over interfaces are constrained by a limited understanding of growth pathways and kinetics. Here we demonstrate that shuttered molecular beam epitaxy induces rearrangements of atomic planes at a polar / non-polar junction of LaFeO$_3$ (LFO) / $n$-SrTiO$_3$ (STO) depending on the substrate termination. Surface characterization confirms that substrates with two different (TiO$_2$ and SrO) terminations were prepared prior to LFO deposition; however, local electron energy loss spectroscopy measurements of the final heterojunctions show a predominantly LaO / TiO$_2$ interfacial junction in both cases. Ab initio simulations suggest that the interfaces can be stabilized by trapping extra oxygen (in LaO / TiO$_2$) and forming oxygen vacancies (in FeO$_2$ / SrO), which points to different growth kinetics in each case and may explain the apparent disappearance of the FeO$_2$ / SrO interface. We conclude that judicious control of deposition timescales can be used to modify growth pathways, opening new avenues to control the structure and properties of interfacial systems.

cond-mat.mtrl-sci↗

Measurement Error in Atomic-Scale STEM-EDS Mapping of a Model Oxide Interface

With the development of affordable aberration-correctors, analytical scanning transmission electron microscopy (STEM) studies of complex interfaces can now be conducted at high spatial resolution at laboratories worldwide. Energy-dispersive X-ray spectroscopy (STEM-EDS) in particular has grown in popularity, since it enables elemental mapping over a wide range of ionization energies. However, the interpretation of atomically-resolved data is greatly complicated by beam-sample interactions that are often overlooked by novice users. Here we describe the practical factors---namely, sample thickness and the choice of ionization edge---that affect the quantification of a model perovskite oxide interface. Our measurements of the same sample in regions of different thickness indicate that interface profiles can vary by as much as 2-5 unit cells, depending on the spectral feature. This finding is supported by multislice simulations, which reveal that on-axis maps of even perfectly abrupt interfaces exhibit significant delocalization. Quantification of thicker samples is further complicated by channeling to heavier sites across the interface, as well as an increased signal background. We show that extreme care must be taken to prepare samples to minimize channeling effects and argue that it may not be possible to extract atomically-resolved information from many chemical maps.

cond-mat.mtrl-sci↗

Interface-induced Polarization in SrTiO$_3$-LaCrO$_3$ Superlattices

Epitaxial interfaces and superlattices comprised of polar and non-polar perovskite oxides have generated considerable interest because they possess a range of desirable properties for functional devices. In this work, emergent polarization in superlattices of SrTiO$_3$ (STO) and LaCrO$_3$ (LCO) is demonstrated. By controlling the interfaces between polar LCO and non-polar STO, polarization is induced throughout the STO layers of the superlattice. Using x-ray absorption near-edge spectroscopy and aberration-corrected scanning transmission electron microscopy displacements of the Ti cations off-center within TiO6 octahedra along the superlattice growth direction are measured. This distortion gives rise to built-in potential gradients within the STO and LCO layers, as measured by in situ x-ray photoelectron spectroscopy. Density functional theory models explain the mechanisms underlying this behavior, revealing the existence of both an intrinsic polar distortion and a built-in electric field, which are due to alternately positively and negatively charged interfaces in the superlattice. This study paves the way for controllable polarization for carrier separation in multilayer materials and highlights the crucial role that interface structure plays in governing such behavior.

cond-mat.mtrl-sci↗

Exchange Bias and Bistable Magneto-Resistance States in Amorphous TbFeCo thin Films

Amorphous TbFeCo thin films sputter deposited at room temperature on thermally oxidized Si substrate are found to exhibit strong perpendicular magnetic anisotropy (PMA). Atom probe tomography (APT), scanning transmission electron microscopy (STEM), and energy dispersive spectroscopy (EDS) mapping have revealed two nanoscale amorphous phases with different Tb atomic percentages distributed within the amorphous film. Exchange bias accompanied by bistable magneto-resistance states has been uncovered near room temperature by magnetization and magneto-transport measurements. The exchange anisotropy originates from the exchange interaction between the ferrimagnetic and ferromagnetic components corresponding to the two amorphous phases. This study provides a platform for exchange bias and magneto-resistance switching using single-layer amorphous ferrimagnetic thin films that require no epitaxial growth.

cond-mat.mtrl-sci↗