arXiv subjects

Steven Randolph

Publications and source records attributed to Steven Randolph.

4 recordsLinked to original sources

arXiv2026

Understanding multiscale disorder in superconducting nanowire single photon detectors

Superconducting nanowire single-photon detectors are central to applications across quantum information science. Yet, their performance is limited by the effects of disorder and electrodynamic inhomogeneities that are not well understood. By combining DC transport, dark-count measurements, and bias-dependent microwave transmission spectroscopy in the presence of controlled nanoscale disorder introduced through helium-ion irradiation, we distinguish local instability-driven processes from intrinsic superconducting depairing and kinetic inductance nonlinearities. This approach enables systematic tuning of kinetic inductance, depairing currents, microwave dissipation, and mode structure within a single device. Bias- and temperature-dependent resonance shifts quantify disorder-induced modifications of the superconducting density of states through the nonlinear kinetic inductance, while the emergence of multiple resonant modes reveals the formation of electrodynamically distinct superconducting regions. Comparing depairing under current, field, and temperature isolates the dominant microwave loss mechanisms, separating vortex, quasiparticle, and two-level-system contributions, thus providing a robust multifunctional foundation for disorder engineering of superconducting nanowire detectors and resonators.

quant-ph↗

arXiv2025

Probing Boron Vacancy Defects in hBN via Single Spin Relaxometry

Spin defects in solids offer promising platforms for quantum sensing and memory due to their long coherence times and optical addressability. Here, we integrate a single nitrogen-vacancy (NV) center in diamond with scanning probe microscopy to discover, read out, and spatially map arbitrary spin-based quantum sensors at the nanoscale. Using the boron vacancy ($\mathrm{V}_\mathrm{B}^-$) center in hexagonal boron nitride$\unicode{x2013}$an emerging two-dimensional spin system$\unicode{x2013}$as a model, we detect its electron spin resonance indirectly via changes in the spin relaxation time ($T_1$) of a nearby NV center, eliminating the need for optical excitation or fluorescence detection of the $\mathrm{V}_\mathrm{B}^-$. Cross-relaxation between NV and $\mathrm{V}_\mathrm{B}^-$ ensembles significantly reduces NV $T_1$, enabling quantitative nanoscale mapping of defect densities beyond the optical diffraction limit and clear resolution of hyperfine splitting in isotopically enriched h$^{10}$B$^{15}$N. Our method demonstrates interactions between 3D and 2D spin sensors, establishing NV centers as versatile probes for characterizing otherwise inaccessible spin defects.

cond-mat.mtrl-sci↗

arXiv2025

Defect Engineering in Large-Scale CVD-Grown Hexagonal Boron Nitride: Formation, Spectroscopy, and Spin Relaxation Dynamics

Recently, numerous techniques have been reported for generating optically active defects in exfoliated hexagonal boron nitride (hBN), which hold transformative potential for quantum photonic devices. However, achieving on-demand generation of desirable defect types in scalable hBN films remains a significant challenge. Here, we demonstrate that formation of negative boron vacancy defects, VB-, in suspended, large-area CVD-grown hBN is strongly dependent on the type of bombarding particles (ions, neutrons, and electrons) and irradiation conditions. In contrast to suspended hBN, defect formation in substrate-supported hBN is more complex due to the uncontrollable generation of secondary particles from the substrate, and the outcome strongly depends on the thickness of the hBN. We identify different defect types by correlating spectroscopic and optically detected magnetic resonance features, distinguishing boron vacancies (formed by light ions and neutrons) from other optically active defects emitting at 650 nm assigned to anti-site nitrogen vacancy (NBVN) and reveal the presence of additional dark paramagnetic defects that influence spin-lattice relaxation time (T1) and zero-field splitting parameters, all of which strongly depend on the defect density. These results underscore the potential for precisely engineered defect formation in large-scale CVD-grown hBN, paving the way for the scalable fabrication of quantum photonic devices.

cond-mat.mtrl-sci↗

arXiv2015

Direct-write milling of diamond by a focused oxygen ion beam

Recent advances in focused ion beam technology have enabled high-resolution, direct-write nanofabrication using light ions. Studies with light ions to date have, however, focused on milling of materials where sub-surface ion beam damage does not inhibit device performance. Here we report on direct-write milling of single crystal diamond using a focused beam of oxygen ions. Material quality is assessed by Raman and luminescence analysis, and reveals that the damage layer generated by oxygen ions can be removed by nonintrusive post-processing methods such as localised electron beam induced chemical etching.

cond-mat.mtrl-sci↗