arXiv subjects

Stuart S. P. Parkin

Publications and source records attributed to Stuart S. P. Parkin.

At least 73 records · Page 4Linked to original sources

arXiv2020

An ac-susceptibility study of magnetic relaxation phenomena in the antiskyrmion hosting tetragonal Mn-Pt(Pd)-Sn system

Here, we report an exhaustive study of the frequency-dependent ac-magnetic susceptibility of the $D_{2d}$ symmetric Heusler system Mn-Pt(Pd)-Sn that hosts antiskyrmions over a wide temperature range. Magnetic relaxation studies using Cole-Cole formalism reveal a Debye-type relaxation with a nearly negligible distribution in relaxation times. In contrast to the archetypical skyrmion hosts, the high Curie temperature ($ T_C $) of the present system ensures shorter switching times, and, correspondingly, higher frequencies are required to probe the relaxation dynamics. We find a non-monotonic variation in the characteristic relaxation time with distinct maxima at the phase boundaries \textit{via} helical $\longrightarrow$ antiskyrmion $\longrightarrow$ field-polarized states, indicating slower magnetization dynamics over the region of phase coexistence. The temperature-dependent relaxation time across different phases is of the order of $ 10^{-5} - 10^{-4} $ s and follows the well-known Arrhenius law with reasonable values of the energy barriers. The present study concerning the magnetization dynamics in the antiskyrmion host tetragonal Heusler system is an important contribution towards the basic understanding of the dynamical aspects of antiskyrmions for their potential applications.

cond-mat.str-el↗

arXiv2020

Competing energy scales in topological superconducting heterostructures

Artificially engineered topological superconductivity has emerged as a viable route to create Majorana modes, exotic quasiparticles which have raised great expectations for storing and manipulating information in topological quantum computational schemes. The essential ingredients for their realization are spin non-degenerate metallic states proximitized to an s-wave superconductor. In this context, proximity-induced superconductivity in materials with a sizable spin-orbit coupling has been heavily investigated in recent years. Although there is convincing evidence that superconductivity may indeed be induced, it has been difficult to elucidate its topological nature. In this work, we systematically engineer an artificial topological superconductor by progressively introducing superconductivity (Nb) into metals with strong spin-orbital coupling (Pt) and 3D topological surface states (Bi2Te3). Through a longitudinal study of the character of superconducting vortices within s-wave superconducting Nb and proximity-coupled Nb/Pt and Nb/Bi2Te3, we detect the emergence of a zero-bias peak that is directly linked to the presence of topological surface states. Supported by a detailed theoretical model, our results are rationalized in terms of competing energy trends which are found to impose an upper limit to the size of the minigap separating Majorana and trivial modes, its size being ultimately linked to fundamental materials properties.

cond-mat.supr-con↗

arXiv2020

Observation of photoelectric nonvolatile memory and oscillations in VO2 at room temperature

Vanadium dioxide (VO2) is a phase change material that can reversibly change between high and low resistivity states through electronic and structural phase transitions. Thus far, VO2 memory devices have essentially been volatile at room temperature, and nonvolatile memory has required non-ambient surroundings (e.g., elevated temperatures, electrolytes) and long write times. Here, we report the first observation of optically addressable nonvolatile memory in VO2 at room temperature with a readout by voltage oscillations. The read and write times had to be kept shorter than about 150 μs. The writing of the memory and onset of the voltage oscillations had a minimum optical power threshold. This discovery demonstrates the potential of VO2 for new computing devices and architectures, such as artificial neurons and oscillatory neural networks.

physics.app-ph↗

arXiv2020

Colloquium: Physical properties of group-IV monochalcogenide monolayers

We survey the state-of-the-art knowledge of ferroelectric and ferroelastic group-IV monochalcogenide monolayers. These semiconductors feature remarkable structural and mechanical properties, such as a switchable in-plane spontaneous polarization, soft elastic constants, structural degeneracies, and thermally-driven two-dimensional structural transformations. Additionally, these 2D materials also display selective valley excitations, valley Hall effects, and persistent spin helix behavior. After a description of their Raman spectra, a discussion of optical properties arising from their lack of centrosymmetry---such as an unusually strong second-harmonic intensity, large bulk photovoltaic effects, photostriction, and tunable exciton binding energies---is provided as well. The physical properties observed in these materials originate from (correlate with) their intrinsic and switchable electric polarization, and the physical behavior hereby reviewed could be of use in non-volatile memory, valleytronic, spintronic, and optoelectronic devices: these 2D multiferroics enrich and diversify the 2D materials toolbox.

cond-mat.mes-hall↗

arXiv2020

Giant transition-state enhancement of quasiparticle spin-Hall effect in an exchange-spin-split superconductor detected by non-local magnon spin-transport

Although recent experiments and theories have shown a variety of exotic transport properties of non-equilibrium quasiparticles (QPs) in superconductor (SC)-based devices with either Zeeman or exchange spin-splitting, how QP interplays with magnon spin currents remains elusive. Here, using non-local magnon spin-transport devices where a singlet SC (Nb) on top of a ferrimagnetic insulator (Y3Fe5O12) serves as a magnon spin detector, we demonstrate that the conversion efficiency of magnon spin to QP charge via inverse spin-Hall effect (iSHE) in such an exchange-spin-split SC can be greatly enhanced by up to 3 orders of magnitude compared with that in the normal state, particularly when its interface superconducting gap matches the magnon spin accumulation. Through systematic measurements with varying the current density and SC thickness, we identify that superconducting coherence peaks and exchange spin-splitting of the QP density-of-states, yielding a larger spin excitation while retaining a modest QP charge-imbalance relaxation, are responsible for the giant QP iSHE. The latter exchange-field-modified QP relaxation is experimentally proved by spatially resolved measurements with varying the separation of electrical contacts on the spin-split Nb.

cond-mat.mes-hall↗

arXiv2020

Microscopic manipulation of ferroelectric domains in SnSe monolayers at room temperature

Two-dimensional (2D) van der Waals ferroelectrics provide an unprecedented architectural freedom for the creation of artificial multiferroics and non-volatile electronic devices based on vertical and co-planar heterojunctions of 2D ferroic materials. Nevertheless, controlled microscopic manipulation of ferroelectric domains is still rare in monolayer-thick 2D ferroelectrics with in-plane polarization. Here we report the discovery of robust ferroelectricity with a critical temperature close to 400 K in SnSe monolayer plates grown on graphene, and the demonstration of controlled room temperature ferroelectric domain manipulation by applying appropriate bias voltage pulses to the tip of a scanning tunneling microscope (STM). This study shows that STM is a powerful tool for detecting and manipulating the microscopic domain structures in 2D ferroelectric monolayers, which is difficult for conventional approaches such as piezoresponse force microscopy, thus facilitating the hunt for other 2D ferroelectric monolayers with in-plane polarization with important technological applications.

cond-mat.mtrl-sci↗

arXiv2020

Experimental formation of monolayer group-IV monochalcogenides

Monolayer group-IV monochalcogenides (MX, M = Ge, Sn, Pb; X = S, Se, Te) are a family of novel two-dimensional (2D) materials that have atomic structures closely related to that of the staggered black phosphorus lattice. The structure of most monolayer MX materials exhibits a broken inversion symmetry, and many of them exhibit ferroelectricity with a reversible in-plane electric polarization. A further consequence of the noncentrosymmetric structure is that when coupled with strong spin-orbit coupling, many MX materials are promising for the future applications in non-linear optics, photovoltaics, spintronics and valleytronics. Nevertheless, because of the relatively large exfoliation energy, the creation of monolayer MX materials is not easy, which hinders the integration of these materials into the fast-developing field of 2D material heterostructures. In this Perspective, we review recent developments in experimental routes to the creation of monolayer MX, including molecular beam epitaxy and two-step etching methods. Other approaches that could be used to prepare monolayer MX are also discussed, such as liquid phase exfoliation and solution phase synthesis. A quantitative comparison between these different methods is also presented.

cond-mat.mtrl-sci↗

arXiv2020

Doping-induced spin Hall ratio enhancement in A15-phase, Ta-doped Beta-W thin films

As spintronic devices become more and more prevalent, the desire to find Pt free materials with large spin Hall effects is increasing. Previously it was shown that Beta W, the metastable A15 structured variant of pure W, has charge-spin conversion efficiencies on par with Pt, and it was predicted that Beta W(Ta) alloys should be even more efficient. Here we demonstrate the enhancement of the spin Hall ratio (SHR) in A15-phase Beta W films doped with Ta (W(4-x)Tax where x is between 0.28 and 0.4, deposited at room temperature using DC magnetron co-sputtering. In close agreement with theoretical predictions, we find that the SHR of the doped films was approx. 9 percent larger than pure Beta W films. We also found that the SHRs in devices with Co2Fe6B2 were nearly twice as large as the SHRs in devices with Co4Fe4B2. This work shows that by optimizing deposition parameters and substrates, the fabrication of the optimum W3Ta alloy should be feasible, opening the door to commercially viable, Pt free, spintronic devices.

cond-mat.mtrl-sci↗

arXiv2020

Direct observation of handedness-dependent quasiparticle interference in the two enantiomers of topological chiral semimetal PdGa

It has recently been proposed that combining chirality with topological band theory may result in a totally new class of fermions. These particles have distinct properties: they appear at high symmetry points of the reciprocal lattice, they are connected by helicoidal surface Fermi arcs spanning the entire Brillouin zone, and they are expected to exist over a large energy range. Additionally, they are expected to give rise to totally new effects forbidden in other topological classes. Understanding how these unconventional quasiparticles propagate and interact is crucial for exploiting their potential in innovative chirality-driven device architectures. These aspects necessarily rely on the detection of handedness-dependent effects in the two enantiomers and remain largely unexplored so far. Here, we use scanning tunnelling microscopy to visualize the electronic properties of both enantiomers of the prototypical chiral topological semimetal PdGa at the atomic scale. We reveal that the surface-bulk connectivity goes beyond ensuring the existence of topological Fermi arcs, but also determines how quasiparticles propagate and scatter at impurities, giving rise to chiral quantum interference patterns of opposite handedness and opposite spiralling direction for the two different enantiomers, a direct manifestation of the change of sign of their Chern number. Additionally, we demonstrate that PdGa remains topologically non-trivial over a large energy range, experimentally detecting Fermi arcs in an energy window of more than 1.6 eV symmetrically centerd around the Fermi level. These results are rationalized in terms of the deep connection between chirality in real and reciprocal space in this class of materials, and they allow to identify PdGa as an ideal topological chiral semimetal.

cond-mat.mes-hall↗

arXiv2020

Thermopower and Unconventional Nernst in the Predicted Type-II Weyl Semi-metal WTe$_2$

WTe$_2$ is one of a series of recently discovered high mobility semimetals, some of whose properties are characteristic of topological Dirac or Weyl metals. One of its most interesting properties is the unsaturated giant magnetoresistance that it exhibits at low temperatures. An important question is the degree to which this property can be ascribed to a conventional semi-metallic model in which a highly compensated, high mobility metal exhibits large magnetoresistance. Here we show that the longitudinal thermopower (Seebeck effect) of semi-metallic WTe$_2$ exfoliated flakes exhibits periodic sign changes about zero with increasing magnetic field that indicates distinct electron and hole Landau levels and nearly fully compensated electron and hole carrier densities. However, inconsistent with a conventional semi-metallic picture, we find a rapid enhancement of the Nernst effect at low temperatures that is nonlinear in magnetic field, which is consistent with Weyl points in proximity to the Fermi energy. Hence, we demonstrate the role played by the Weyl character of WTe$_2$ in its transport properties.

cond-mat.mes-hall↗

arXiv2019

Anomalous, anomalous Hall effect in the layered, Kagome, Dirac semimetal KV$_3$Sb$_5$

The electronic anomalous Hall effect (AHE), where charge carriers acquire a velocity component orthogonal to an applied electric field, is one of the most fundamental and widely studied phenomena in physics. There are several different AHE mechanisms known, and material examples are highly sought after, however in the highly conductive (skew scattering) regime the focus has centered around ferromagnetic metals. Here we report the observation of a giant extrinsic AHE in KV$_3$Sb$_5$, an exfoliable, Dirac semimetal with a Kagome layer of Vanadium atoms. Although there has been no reports of magnetic ordering down to 0.25 K, the anomalous Hall conductivity (AHC) reaches $\approx$ 15,507 $Ω^{-1}$cm$^{-1}$ with an anomalous Hall ratio (AHR) of $\approx$ 1.8$ \%$; an order of magnitude larger than Fe. Defying expectations from skew scattering theory, KV$_3$Sb$_5$ shows an enhanced skew scattering effect that scales quadratically, not linearly, with the longitudinal conductivity ($σ_{xx}$), opening the possibility of reaching an anomalous Hall angle (AHA) of 90$^{\circ}$ in metals; an effect thought reserved for quantum anomalous Hall insulators. This observation raises fundamental questions about the AHE and opens a new frontier for AHE (and correspondingly SHE) exploration, stimulating investigation in a new direction of materials, including metallic geometrically frustrated magnets, spin-liquid candidates, and cluster magnets.

cond-mat.mtrl-sci↗

arXiv2019

Anomalous and topological Hall effects in epitaxial thin films of the noncollinear antiferromagnet Mn$_{3}$Sn

Noncollinear antiferromagnets with a D0$_{19}$ (space group = 194, P6$_{3}$/mmc) hexagonal structure have garnered much attention for their potential applications in topological spintronics. Here, we report the deposition of continuous epitaxial thin films of such a material, Mn$_{3}$Sn, and characterize their crystal structure using a combination of x-ray diffraction and transmission electron microscopy. Growth of Mn$_{3}$Sn films with both (0001) c-axis orientation and (40$\bar{4}$3) texture is achieved. In the latter case, the thin films exhibit a small uncompensated Mn moment in the basal plane, quantified via magnetometry and x-ray magnetic circular dichroism experiments. This cannot account for the large anomalous Hall effect simultaneously observed in these films, even at room temperature, with magnitude $σ_{\mathrm{xy}}$ ($μ_{0}H$ = 0 T) = 21 $\mathrmΩ^{-1}\mathrm{cm}^{-1}$ and coercive field $μ_{0}H_{\mathrm{C}}$ = 1.3 T. We attribute the origin of this anomalous Hall effect to momentum-space Berry curvature arising from the symmetry-breaking inverse triangular spin structure of Mn$_{3}$Sn. Upon cooling through the transition to a glassy ferromagnetic state at around 50 K, a peak in the Hall resistivity close to the coercive field indicates the onset of a topological Hall effect contribution, due to the emergence of a scalar spin chirality generating a real-space Berry phase. We demonstrate that the polarity of this topological Hall effect, and hence the chiral-nature of the noncoplanar magnetic structure driving it, can be controlled using different field cooling conditions.

cond-mat.mes-hall↗

arXiv2019

Anomalous thickness-dependent electrical conductivity in van der Waals layered transition metal halide, Nb_3Cl_8

Understanding the electronic transport properties of layered, van der Waals transition metal halides (TMHs) and chalcogenides is a highly active research topic today. Of particular interest is the evolution of those properties with changing thickness as the 2D limit is approached. Here, we present the electrical conductivity of exfoliated single crystals of the TMH, cluster magnet, Nb3Cl8, over a wide range of thicknesses both with and without hexagonal boron nitride (hBN) encapsulation. The conductivity is found to increase by more than three orders of magnitude when the thickness is decreased from 280 μm to 5 nm, at 300 K. At low temperatures and below ~50 nm, the conductance becomes thickness independent, implying surface conduction is dominating. Temperature dependent conductivity measurements indicate Nb3Cl8 is an insulator, however the effective activation energy decreases from a bulk value of 310 meV to 140 meV by 5nm. X-ray photoelectron spectroscopy (XPS) shows mild surface oxidation in devices without hBN capping, however, no significant difference in transport is observed when compared to the capped devices, implying the thickness dependent transport behavior is intrinsic to the material. A conduction mechanism comprised of a higher conductivity surface channel in parallel with a lower conductivity interlayer channel is discussed.

cond-mat.mtrl-sci↗

arXiv2019

Nonlinear magnetization dynamics driven by strong terahertz fields

We present a comprehensive experimental and numerical study of magnetization dynamics triggered in a thin metallic film by single-cycle terahertz pulses of $\sim20$ MV/m electric field amplitude and $\sim1$ ps duration. The experimental dynamics is probed using the femtosecond magneto-optical Kerr effect (MOKE), and it is reproduced numerically using macrospin simulations. The magnetization dynamics can be decomposed in three distinct processes: a coherent precession of the magnetization around the terahertz magnetic field, an ultrafast demagnetization that suddenly changes the anisotropy of the film, and a uniform precession around the equilibrium effective field that is relaxed on the nanosecond time scale, consistent with a Gilbert damping process. Macrospin simulations quantitatively reproduce the observed dynamics, and allow us to predict that novel nonlinear magnetization dynamics regimes can be attained with existing table-top terahertz sources.

cond-mat.mes-hall↗

arXiv2019

Electrical writing, deleting, reading, and moving of magnetic skyrmioniums in a racetrack device

A magnetic skyrmionium (also called 2$π$-skyrmion) can be understood as a skyrmion - a topologically non-trivial magnetic whirl - which is situated in the center of a second skyrmion with reversed magnetization. Here, we propose a new optoelectrical writing and deleting mechanism for skyrmioniums in thin films, as well as a reading mechanism based on the topological Hall voltage. Furthermore, we point out advantages for utilizing skyrmioniums as carriers of information in comparison to skyrmions with respect to the current-driven motion. We simulate all four constituents of an operating skyrmionium-based racetrack storage device: creation, motion, detection and deletion of bits. The existence of a skyrmionium is thereby interpreted as a '1' and its absence as a '0' bit.

cond-mat.str-el↗

arXiv2019

Current-Induced magnetization switching by the high spin Hall conductivity $α$-W

The spin Hall effect originating from 5d heavy transition metal thin films such as Pt, Ta, and W is able to generate efficient spin-orbit torques that can switch adjacent magnetic layers. This mechanism can serve as an alternative to conventional spin-transfer torque for controlling next-generation magnetic memories. Among all 5d transition metals, W in its resistive amorphous phase typically shows the largest spin-orbit torque efficiency ~ 0.20-0.50. In contrast, its conductive and crystalline $α$ phase possesses a significantly smaller efficiency ~ 0.03 and no spin-orbit torque switching has yet been realized using $α$-W thin films as the spin Hall source. In this work, through a comprehensive study of high quality W/CoFeB/MgO and the reversed MgO/CoFeB/W magnetic heterostructures, we show that although amorphous-W has a greater spin-orbit torque efficiency, the spin Hall conductivity of $α$-W ($|σ_{\operatorname{SH}}^{α\operatorname{-W}}|=3.71\times10^{5}\operatornameΩ^{-1}\operatorname{m}^{-1}$) is ~3.5 times larger than that of amorphous-W ($|σ_{\operatorname{SH}}^{\operatorname{amorphous-W}}|=1.05\times10^{5}\operatornameΩ^{-1}\operatorname{m}^{-1}$). Moreover, we demonstrate spin-orbit torque driven magnetization switching using a MgO/CoFeB/$α$-W heterostructure. Our findings suggest that the conductive and high spin Hall conductivity $α$-W can be a potential candidate for future low power consumption spin-orbit torque memory applications.

cond-mat.mtrl-sci↗

arXiv2019

Localized Triggering of the Insulator-Metal Transition in VO2 using a Single Carbon Nanotube

Vanadium dioxide (VO2) has been widely studied for its rich physics and potential applications, undergoing a prominent insulator-metal transition (IMT) near room temperature. The transition mechanism remains highly debated, and little is known about the IMT at nanoscale dimensions. To shed light on this problem, here we use ~1 nm wide carbon nanotube (CNT) heaters to trigger the IMT in VO2. Single metallic CNTs switch the adjacent VO2 at less than half the voltage and power required by control devices without a CNT, with switching power as low as ~85 $μW$ at 300 nm device lengths. We also obtain potential and temperature maps of devices during operation using Kelvin Probe Microscopy (KPM) and Scanning Thermal Microscopy (SThM). Comparing these with three-dimensional electrothermal simulations, we find that the local heating of the VO2 by the CNT play a key role in the IMT. These results demonstrate the ability to trigger IMT in VO2 using nanoscale heaters, and highlight the significance of thermal engineering to improve device behaviour.

cond-mat.mtrl-sci↗

arXiv2019

Extremely high conductivity observed in the triple point topological metal MoP

Weyl and Dirac fermions have created much attention in condensed matter physics and materials science. Recently, several additional distinct types of fermions have been predicted. Here, we report ultra-high electrical conductivity in MoP at low temperature, which has recently been established as a triple point Fermion material. Here we show that the electrical resistivity is 6 n-ohm cm at 2 K with a large mean free path of 11 microns. de Haas-van Alphen oscillations reveal spin splitting of the Fermi surfaces. In contrast to noble metals with similar conductivity and number of carriers, the magnetoresistance in MoP does not saturate up to 9 T at 2 K. Interestingly, the momentum relaxing time of the electrons is found to be more than 15 times larger than the quantum coherence time. This difference between the scattering scales shows that momentum conserving scattering dominates in MoP at low temperatures.

cond-mat.mtrl-sci↗