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Stuart S. P. Parkin

Publications and source records attributed to Stuart S. P. Parkin.

At least 91 records · Page 5Linked to original sources

Magnetic and electrical transport signatures of uncompensated moments in epitaxial thin films of the non-collinear antiferromagnet Mn$_{3}$Ir

Non-collinear antiferromagnets, with either an L1$_{2}$ cubic crystal lattice (e.g. Mn$_{3}$Ir and Mn$_{3}$Pt) or a D0$_{19}$ hexagonal structure (e.g. Mn$_{3}$Sn and Mn$_{3}$Ge), exhibit a number of novel phenomena of interest to topological spintronics. Amongst the cubic systems, for example, tetragonally distorted Mn$_{3}$Pt exhibits an intrinsic anomalous Hall effect (AHE). However, Mn$_{3}$Pt only enters a non-collinear magnetic phase close to the stoichiometric composition and at suitably large thicknesses. Therefore, we turn our attention to Mn$_{3}$Ir, the material of choice for use in exchange bias heterostructures. In this paper, we investigate the magnetic and electrical transport properties of epitaxially grown, face-centered-cubic $γ$-Mn$_{3}$Ir thin films with (111) crystal orientation. Relaxed films of 10 nm thickness exhibit an ordinary Hall effect, with a hole-type carrier concentration of (2.24 $\pm$ 0.08) $\times$ 10$^{23}$ cm$^{-3}$. On the other hand, TEM characterization demonstrates that ultrathin 3 nm films grow with significant in-plane tensile strain. This may explain a small remanent moment, observed at low temperatures, shown by XMCD spectroscopy to arise from uncompensated Mn spins. Of the order 0.02 $μ_{B}$ / atom, this dominates electrical transport behavior, leading to a small AHE and negative magnetoresistance. These results are discussed in terms of crystal microstructure and chiral domain behavior, with spatially resolved XML(C)D-PEEM supporting the conclusion that small antiferromagnetic domains, < 20 nm in size, of differing chirality account for the absence of observed Berry curvature driven magnetotransport effects.

cond-mat.mtrl-sci↗

From atomic layer to the bulk: low-temperature atomistic structure, ferroelectric and electronic properties of SnTe films

SnTe hosts ferroelectricity that competes with its weak non-trivial band topology: in the high-symmetry rocksalt structure--in which its intrinsic electric dipole is quenched--this material develops metallic surface bands, but in its rhombic ground-state configuration--that hosts a non-zero spontaneous electric dipole--the crystalline symmetry is lowered and the presence of surface electronic bands is not guaranteed. Here, the type of ferroelectric coupling and the atomistic and electronic structure of SnTe films ranging from 2 to 40 ALs are examined on freestanding samples, to which atomic layers were gradually added. 4 AL SnTe films are antiferroelectrically-coupled, while thicker freestanding SnTe films are ferroelectrically-coupled. The electronic band gap reduces its magnitude in going from 2 ALs to 40 ALs but it does not close due to the rhombic nature of the structure. These results bridge the structure of SnTe films from the monolayer to the bulk.

cond-mat.mes-hall↗

Epitaxial growth, structural characterization and exchange bias of non-collinear antiferromagnetic Mn$_{3}$Ir thin films

Antiferromagnetic materials are of great interest for spintronics. Here we present a comprehensive study of the growth, structural characterization, and resulting magnetic properties of thin films of the non-collinear antiferromagnet Mn$_{3}$Ir. Using epitaxial engineering on MgO (001) and Al$_{2}$O$_{3}$ (0001) single crystal substrates, we control the growth of cubic $γ$-Mn$_{3}$Ir in both (001) and (111) crystal orientations, and discuss the optimization of growth conditions to achieve high-quality crystal structures with low surface roughness. Exchange bias is studied in bilayers, with exchange bias fields as large as -29 mT (equivalent to a unidirectional anisotropy constant of 11.5 nJ cm$^{-2}$) measured in Mn$_{3}$Ir (111) / permalloy heterostructures at room temperature. In addition, a distinct dependence of blocking temperature on in-plane crystallographic direction in Mn$_{3}$Ir (001) / Py bilayers is observed. These findings are discussed in the context of chiral antiferromagnetic domain structures, and will inform progress towards topological antiferromagnetic spintronic devices.

cond-mat.mtrl-sci↗

Fast Spiking of a Mott VO2-Carbon Nanotube Composite Device

The recent surge of interest in brain-inspired computing and power-efficient electronics has dramatically bolstered development of computation and communication using neuron-like spiking signals. Devices that can produce rapid and energy-efficient spiking could significantly advance these applications. Here we demonstrate DC-current or voltage-driven periodic spiking with sub-20 ns pulse widths from a single device composed of a thin VO2 film with a metallic carbon nanotube as a nanoscale heater. Compared with VO2-only devices, adding the nanotube heater dramatically decreases the transient duration and pulse energy, and increases the spiking frequency, by up to three orders of magnitude. This is caused by heating and cooling of the VO2 across its insulator-metal transition being localized to a nanoscale conduction channel in an otherwise bulk medium. This result provides an important component of energy-efficient neuromorphic computing systems, and a lithography-free technique for power-scaling of electronic devices that operate via bulk mechanisms.

physics.app-ph↗

The role of ionic liquid breakdown in the electrochemical metallization of VO2: An NMR study of gating mechanisms and VO2 reduction

Metallization of initially insulating VO2 via ionic liquid electrolytes (electrolyte gating) has recently been a topic of much interest. It is clear that the metallization takes place electrochemically and there has previously been extensive evidence for the removal of small amounts of oxygen during ionic liquid gating. Hydrogen intercalation has also been proposed, but the source of the hydrogen has remained unclear. In this work, solid-state magic angle spinning NMR spectroscopy is used to investigate the thermal metal-insulator transition in VO2, before progressing to catalytically hydrogenated and electrochemically metallized VO2. Electrochemical metallization of bulk VO2 particles is shown to be associated with intercalation of hydrogen, the degree of which can be measured with quantitative 1H NMR spectroscopy. Possible sources of the hydrogen are explored, and by using a selectively deuterated ionic liquid, it is revealed that the hydrogenation is due to deprotonation of the ionic liquid; specifically, for the commonly used dialkylimidazolium based ionic liquids, it is the "carbene" proton that is responsible. Increasing the temperature of the electrochemistry is shown to increase the degree of hydrogenation, forming first a less hydrogenated metallic phase then a more hydrogenated insulating Curie-Weiss paramagnetic phase, both of which were also observed for catalytically hydrogenated VO2. The NMR results are supported by magnetic susceptibility measurements, which corroborate the degree of Pauli and Curie-Weiss paramagnetism. NMR spectroscopy is used to identify the presence of hydrogen in an electrolyte gated thin film of VO2, suggesting that electrolyte breakdown, proton intercalation and reactions with decomposition products within the electrolyte should not be ignored when interpreting the electronic and structural changes observed in electrochemical gating experiments.

cond-mat.str-el↗

Adaptive modulation in Ni2Mn1.4In0.6 magnetic shape memory Heusler alloy

The origin of incommensurate structural modulation in Ni-Mn based Heusler type magnetic shape memory alloys (MSMAs) is still an unresolved issue inspite of intense focus on this due to its role in the magnetic field induced ultra-high strains. In the archetypal MSMA Ni2MnGa, the observation of non-uniform displacement of atoms from their mean positions in the modulated martensite phase, premartensite phase and charge density wave as well as the presence of phason broadening of satellite peaks have been taken in support of the electronic instability model linked with a soft acoustic phonon. We present here results of a combined high resolution synchrotron x-ray powder diffraction (SXRPD) and neutron powder diffraction (NPD) study on Ni2Mn1.4In0.6 using (3+1)D superspace group approach, which reveal not only uniform atomic displacements in the modulated structure of the martensite phase with physically acceptable ordered magnetic moments in the antiferromagnetic phase at low temperatures but also the absence of any premartensite phase and phason broadening of the satellite peaks. Our HRTEM studies and first principles calculations of the ground state also support uniform atomic displacements predicted by powder diffraction studies. All these observations suggest that the structural modulation in the martensite phase of Ni2Mn1.4In0.6 MSMA can be explained in terms of the adaptive phase model. The present study underlines the importance of superspace group analysis using complimentary SXRPD and NPD in understanding the physics of the origin of modulation as well as the magnetic and the modulated ground states of the Heusler type MSMAs. Our work also highlights the fact that the mechanism responsible for the origin of modulated structure in different Ni-Mn based MSMAs may not be universal and it must be investigated thoroughly in different alloy compositions.

cond-mat.mtrl-sci↗

Higher-Order Topological Insulators

Three-dimensional topological (crystalline) insulators are materials with an insulating bulk, but conducting surface states which are topologically protected by time-reversal (or spatial) symmetries. Here, we extend the notion of three-dimensional topological insulators to systems that host no gapless surface states, but exhibit topologically protected gapless hinge states. Their topological character is protected by spatio-temporal symmetries, of which we present two cases: (1) Chiral higher-order topological insulators protected by the combination of time-reversal and a four-fold rotation symmetry. Their hinge states are chiral modes and the bulk topology is $\mathbb{Z}_2$-classified. (2) Helical higher-order topological insulators protected by time-reversal and mirror symmetries. Their hinge states come in Kramers pairs and the bulk topology is $\mathbb{Z}$-classified. We provide the topological invariants for both cases. Furthermore we show that SnTe as well as surface-modified Bi$_2$TeI, BiSe, and BiTe are helical higher-order topological insulators and propose a realistic experimental setup to detect the hinge states.

cond-mat.mes-hall↗

Thermoelectric signatures of the electron-phonon fluid in PtSn4

In most materials, transport can be described by the motion of distinct species of quasiparticles, such as electrons and phonons. Strong interactions between quasiparticles, however, can lead to collective behaviour, including the possibility of viscous hydrodynamic flow. In the case of electrons and phonons, an electron-phonon fluid is expected to exhibit strong phonon-drag transport signatures and an anomalously low thermal conductivity. The Dirac semi-metal PtSn4 has a very low resistivity at low temperatures and shows a pronounced phonon drag peak in the low temperature thermopower; it is therefore an excellent candidate for hosting a hydrodynamic electron-phonon fluid. Here we report measurements of the temperature and magnetic field dependence of the longitudinal and Hall electrical resistivities, the thermopower and the thermal conductivity of PtSn4. We confirm a phonon drag peak in the thermopower near 14 K and observe a concurrent breakdown of the Lorenz ratio below the Sommerfeld value. Both of these facts are expected for an electron-phonon fluid with a quasi-conserved total momentum. A hierarchy between momentum-conserving and momentum-relaxing scattering timescales is corroborated through measurements of the magnetic field dependence of the electrical and Hall resistivity and of the thermal conductivity. These results show that PtSn4 exhibits key features of hydrodynamic transport.

cond-mat.mtrl-sci↗

Similar ultrafast dynamics of several dissimilar Dirac and Weyl semimetals

Recent years have seen the rapid discovery of solids whose low-energy electrons have a massless, linear dispersion, such as Weyl, line-node, and Dirac semimetals. The remarkable optical properties predicted in these materials show their versatile potential for optoelectronic uses. However, little is known of their response in the picoseconds after absorbing a photon. Here we measure the ultrafast dynamics of four materials that share non-trivial band structure topology but that differ chemically, structurally, and in their low-energy band structures: ZrSiS, which hosts a Dirac line node and Dirac points; TaAs and NbP, which are Weyl semimetals; and Sr$_{1-y}$Mn$_{1-z}$Sb$_2$, in which Dirac fermions coexist with broken time-reversal symmetry. After photoexcitation by a short pulse, all four relax in two stages, first sub-picosecond, and then few-picosecond. Their rapid relaxation suggests that these and related materials may be suited for optical switches and fast infrared detectors. The complex change of refractive index shows that photoexcited carrier populations persist for a few picoseconds.

cond-mat.mtrl-sci↗

Symmetry Demanded Topological Nodal-line Materials

The realization of Dirac and Weyl physics in solids has made topological materials one of the main focuses of condensed matter physics. Recently, the topic of topological nodal line semimetals, materials in which Dirac or Weyl-like crossings along special lines in momentum space create either a closed ring or line of degeneracies, rather than discrete points, has become a hot topic in topological quantum matter. Here we review the experimentally confirmed and theoretically predicted topological nodal line semimetals, focusing in particular on the symmetry protection mechanisms of the nodal lines in various materials. Three different mechanisms: a combination of inversion and time-reversal symmetry, mirror reflection symmetry, and non-symmorphic symmetry, and their robustness under the effect of spin orbit coupling are discussed. We also present a new Weyl nodal line material, the Te-square net compound KCu$_2$EuTe$_4$, which has several Weyl nodal lines including one extremely close to the Fermi level ($<$30 meV below E$_F$). Finally, we discuss potential experimental signatures for observing exotic properties of nodal line physics.

cond-mat.mtrl-sci↗

Prediction of triple point fermions in simple half-Heusler topological insulators

We predict the existence of triple point fermions in the band structure of several half-Heusler topological insulators by $ab~initio$ calculations and the Kane model. We find that many half-Heusler compounds exhibit multiple triple points along four independent $C_3$ axes, through which the doubly degenerate conduction bands and the nondegenerate valence band cross each other linearly nearby the Fermi energy. When projected from the bulk to the (111) surface, most of these triple points are located far away from the surface $\barΓ$ point, as distinct from previously reported triple point fermion candidates. These isolated triple points give rise to Fermi arcs on the surface, that can be readily detected by photoemission spectroscopy or scanning tunneling spectroscopy.

cond-mat.mtrl-sci↗

Synthetic Antiferromagnetic Spintronics: Part of a collection of reviews on antiferromagnetic spintronics

Spintronic and nanomagnetic devices often derive their functionality from layers of different materials and the interfaces between them. This is especially true for synthetic antiferromagnets - two or more ferromagnetic layers that are separated by metallic spacers or tunnel barriers and which have antiparallel magnetizations. Here, we discuss the new opportunities that arise from synthetic antiferromagnets, as compared to crystal antiferromagnets or ferromagnets.

cond-mat.mes-hall↗

Discovery of Magnetic Antiskyrmions Beyond Room Temperature in Tetragonal Heusler Materials

Skyrmions, topologically stable spin textures, are of great interest for new generations of spintronic devices. In general, the stabilization of skyrmions has been achieved in systems with broken inversion symmetry, where the asymmetric Dzyaloshinskii-Moriya interaction (DMI) modifies the uniform magnetic state to a swirling state. Depending on the crystal symmetries, two distinct types of skyrmions, Bloch and Néel types, have been observed experimentally. Here, we present, the experimental manifestation of a special type of spin-swirling, namely antiskyrmions, in a family of acentric tetragonal Heusler compounds with D2d crystal symmetry. A spiral magnetic ground-state, which propagates in the tetragonal basal plane, is transformed into a skyrmion lattice-state under magnetic fields applied along the tetragonal axis over a wide temperature interval. Direct imaging by Lorentz Transmission Electron Microscopy (LTEM) shows field stabilized antiskyrmion lattices and isolated antiskyrmions between 100 K and 400 K, and zero-field metastable antiskyrmions at low temperatures.

cond-mat.mtrl-sci↗

Heusler 4.0: Tunable Materials

Heusler compounds are a large family of binary, ternary and quaternary compounds that exhibit a wide range of properties of both fundamental and potential technological interest. The extensive tunability of the Heusler compounds through chemical substitutions and structural motifs makes the family especially interesting. In this article we highlight recent major developments in the field of Heusler compounds and put these in the historical context. The evolution of the Heusler compounds can be described by four major periods of research. In the latest period, Heusler 4.0 has led to the observation of a variety of properties derived from topology that includes: topological metals with Weyl and Dirac points; a variety of non-collinear spin textures including the very recent observation of skyrmions at room temperature; and giant anomalous Hall effects in antiferromagnetic Heuslers with triangular magnetic structures. Here we give a comprehensive overview of these major achievements and set research into Heusler materials within the context of recent emerging trends in condensed matter physics.

cond-mat.mtrl-sci↗

Topological Weyl semimetals in the chiral antiferromagnetic materials Mn3Ge and Mn3Sn

Recent experiments revealed that Mn3Sn and Mn3Ge exhibit a strong anomalous Hall effect at room temperature, provoking us to explore their electronic structures for topological properties. By ab initio band structure calculations, we have observed the existence of multiple Weyl points in the bulk and corresponding Fermi arcs on the surface, predicting antiferromagnetic Weyl semimetals in Mn3Ge and Mn3Sn. Here the chiral antiferromagnetism in the Kagome-type lattice structure is essential to determine the positions and numbers of Weyl points. Our work further reveals a new guiding principle to search for magnetic Weyl semimetals among materials that exhibit a strong anomalous Hall effect.

cond-mat.mtrl-sci↗

Multiple Dirac cones at the surface of the topological metal LaBi

The rare-earth monopnictide LaBi exhibits exotic magneto-transport properties including an extremely large and anisotropic magnetoresistance. Experimental evidence for topological surface states is still missing although band inversions have been postulated to induce a topological phase in LaBi. By employing angle-resolved photoemission spectroscopy (ARPES) in conjunction with $ab~initio$ calculations, we have revealed the existence of surface states of LaBi through the observation of three Dirac cones: two coexist at the corners and one appears at the center of the Brillouin zone. The odd number of surface Dirac cones is a direct consequence of the odd number of band inversions in the bulk band structure, thereby proving that LaBi is a topological, compensated semi-metal, which is equivalent to a time-reversal invariant topological insulator. Our findings provide insight into the topological surface states of LaBi's semi-metallicity and related magneto-transport properties.

cond-mat.mtrl-sci↗

Compensated ferrimagnetic tetragonal Heusler thin films for antiferromagnetic spintronics

In recent years, antiferromagnetic spintronics has received much attention since ideal antiferromagnets do not produce stray fields and are much more stable to external magnetic fields compared to materials with net magnetization. Akin to antiferromagnets, compensated ferrimagnets have zero net magnetization but have the potential for large spin-polarization and strong out of plane magnetic anisotropy, and, hence, are ideal candidates for high density memory applications. Here, we demonstrate that a fully compensated magnetic state with a tunable magnetic anisotropy is realized in Mn-Pt-Ga based tetragonal Heusler thin films. Furthermore, we show that a bilayer formed from a fully compensated and a partially compensated Mn-Pt-Ga layer, exhibits a large interfacial exchange bias up to room temperature. The present work establishes a novel design principle for spintronic devices that are formed from materials with similar elemental compositions and nearly identical crystal and electronic structures. Such devices are of significant practical value due to their improved properties such as thermal stability. The flexible nature of Heusler materials to achieve tunable magnetizations, and anisotropies within closely matched materials provides a new direction to the growing field of antiferromagnetic spintronics.

cond-mat.mtrl-sci↗

Classical limit of Rabi nutations in spins of ferromagnets

Rabi oscillations describe the interaction of a two-level system with a rotating electromagnetic field. As such, they serve as the principle method for manipulating quantum bits. By using a combination of femtosecond laser pulses and microwave excitations, we have observed the classical form of Rabi nutations in a ferromagnetic system whose equations of motion mirror the case of a precessing quantum two-level system. Key to our experiments is the selection of a subset of spins that is in resonance with the microwave excitation and whose coherence time is thereby extended. Taking advantage of Gilbert damping, the relaxation times are further increased such that mode-locking takes place. The observation of such Rabi nutations is the first step towards potential applications based on phase-coherent spin manipulation in ferromagnets.

cond-mat.mes-hall↗