arXiv subjects

Sung-Hoon Lee

Publications and source records attributed to Sung-Hoon Lee.

15 recordsLinked to original sources

arXiv2026

Landau diamagnetism and the de Haas-van Alphen effect from a single geometric construction

Landau diamagnetism is usually derived from the grand canonical potential, a calculation that yields the correct susceptibility but little physical insight, while the rule that extremal cross sections govern the de Haas-van Alphen (dHvA) oscillations is commonly asserted rather than exhibited. We present an elementary zero-temperature construction in which the occupied states of a free-electron gas are grouped, interval by interval along the field direction, into the Landau levels onto which they condense. Within each interval the field-induced energy cost reduces to a transfer of states between two congruent triangles, and center-of-mass arithmetic yields the Landau susceptibility. The construction fails only in a narrow neighborhood of an extremal cross section of the Fermi surface; there the contribution oscillates with the dHvA period, one oscillation for each Landau level that passes through the extremal cross section. Direct zero-temperature state counting locates the oscillation: the residual is concentrated in the few intervals nearest the extremal cross section, the summed contribution of the distant ones being negligible on the scale of the peak oscillation amplitude.

cond-mat.stat-mech↗

arXiv2026

Surface Reconstruction-Driven Insulating Behavior in Metallic Charge-Density-Wave 1T-TaSe$_{2}$

Bulk 1T-TaSe$_2$ is metallic, yet its surface consistently exhibits an insulating gap -- a dichotomy long attributed to a surface Mott insulator driven by enhanced electron correlations. Using density functional theory calculations, we show that this insulating surface instead originates from a charge-density-wave (CDW) stacking reconstruction. Whereas the bulk stabilizes a single-layer CDW stacking that supports metallic transport, the surface energetically favors a bilayer stacking, in which interlayer hybridization of Ta $5d_{z^2}$ orbitals opens a $\sim$0.4 eV gap -- a band insulator requiring no on-site Coulomb repulsion. This reconstruction is the thermodynamic ground state for slab thicknesses from two to eight layers, and the calculated surface density of states quantitatively reproduces scanning tunneling spectra of both insulating and metallic domains. CDW surface reconstruction, rather than Mott physics, thus governs the surface electronic structure of 1T-TaSe$_2$, providing a unified explanation for the observed coexistence of metallic and insulating domains.

cond-mat.mtrl-sci↗

arXiv2026

Crystal structure and collective oxygen transport in high-temperature Ta$_{2}$O$_{5}$

Ionic conduction in crystalline solids is conventionally understood to proceed via atomic-scale defects such as vacancies or interstitials. Here, by addressing the long-standing structural ambiguity of high-temperature tetragonal tantalum pentoxide (H-Ta$_2$O$_5$), we identify a qualitatively different transport mechanism. Based on first-principles calculations, we propose that H-Ta$_2$O$_5$ adopts a chiral framework composed of orthorhombic building units interconnected by screw-rotation planes, with a tantalum sublattice consistent with available transmission electron microscopy observations. Our ab initio molecular dynamics simulations reveal collective, one-dimensional oxygen migration within this stoichiometric lattice at temperatures of a few hundred degrees Celsius. This cooperative transport is enabled by the structural flexibility of octahedral coordination at the screw-rotation planes, which allows extensive lattice relaxation and dynamic charge redistribution, yielding a migration barrier of $\sim$0.2 eV. These results provide a microscopic interpretation of the reported high and anisotropic oxygen conductivity in H-Ta$_2$O$_5$.

cond-mat.mtrl-sci↗

arXiv2024

Origin of Distinct Insulating Domains in the Layered Charge Density Wave Material 1T-TaS2

Vertical charge order shapes the electronic properties in layered charge density wave (CDW) materials. Various stacking orders inevitably create nanoscale domains with distinct electronic structures inaccessible to bulk probes. Here, the stacking characteristics of bulk 1$T$-TaS$2$ are analyzed using scanning tunneling spectroscopy (STS) and density functional theory (DFT) calculations. It is observed that Mott-insulating domains undergo a transition to band-insulating domains restoring vertical dimerization of the CDWs. Furthermore, STS measurements covering a wide terrace reveal two distinct band insulating domains differentiated by band edge broadening. These DFT calculations reveal that the Mott insulating layers preferably reside on the subsurface, forming broader band edges in the neighboring band insulating layers. Ultimately, buried Mott insulating layers believed to harbor the quantum spin liquid phase are identified. These results resolve persistent issues regarding vertical charge order in 1$T$-TaS$2$, providing a new perspective for investigating emergent quantum phenomena in layered CDW materials.

cond-mat.str-el↗

arXiv2024

Generative Unlearning for Any Identity

Recent advances in generative models trained on large-scale datasets have made it possible to synthesize high-quality samples across various domains. Moreover, the emergence of strong inversion networks enables not only a reconstruction of real-world images but also the modification of attributes through various editing methods. However, in certain domains related to privacy issues, e.g., human faces, advanced generative models along with strong inversion methods can lead to potential misuses. In this paper, we propose an essential yet under-explored task called generative identity unlearning, which steers the model not to generate an image of a specific identity. In the generative identity unlearning, we target the following objectives: (i) preventing the generation of images with a certain identity, and (ii) preserving the overall quality of the generative model. To satisfy these goals, we propose a novel framework, Generative Unlearning for Any Identity (GUIDE), which prevents the reconstruction of a specific identity by unlearning the generator with only a single image. GUIDE consists of two parts: (i) finding a target point for optimization that un-identifies the source latent code and (ii) novel loss functions that facilitate the unlearning procedure while less affecting the learned distribution. Our extensive experiments demonstrate that our proposed method achieves state-of-the-art performance in the generative machine unlearning task. The code is available at https://github.com/KHU-AGI/GUIDE.

cs.CV↗

arXiv2024

Nonvolatile optical control of interlayer stacking order in 1T-TaS2

Nonvolatile optical manipulation of material properties on demand is a highly sought-after feature in the advancement of future optoelectronic applications. While the discovery of such metastable transition in various materials holds good promise for achieving this goal, their practical implementation is still in the nascent stage. Here, we unravel the nature of the ultrafast laser-induced hidden state in 1T-TaS2 by systematically characterizing the electronic structure evolution throughout the reversible transition cycle. We identify it as a mixed-stacking state involving two similarly low-energy interlayer orders, which is manifested as the charge density wave phase disruption. Furthermore, our comparative experiments utilizing the single-pulse writing, pulse-train erasing and pulse-pair control explicitly reveal the distinct mechanism of the bidirectional transformations -- the ultrafast formation of the hidden state is initiated by a coherent phonon which triggers a competition of interlayer stacking orders, while its recovery to the initial state is governed by the progressive domain coarsening. Our work highlights the deterministic role of the competing interlayer orders in the nonvolatile phase transition in the layered material 1T-TaS2, and promises the coherent control of the phase transition and switching speed. More importantly, these results establish all-optical engineering of stacking orders in low-dimensional materials as a viable strategy for achieving desirable nonvolatile electronic devices.

cond-mat.mtrl-sci↗

arXiv2023

Charge density wave surface reconstruction in a van der Waals layered material

Surface reconstruction plays a vital role in determining the surface electronic structure and chemistry of semiconductors and metal oxides. However, it has been commonly believed that surface reconstruction does not occur in van der Waals layered materials, as they do not undergo significant bond breaking during surface formation. In this study, we present evidence that charge density wave (CDW) order in these materials can, in fact, cause CDW surface reconstruction through interlayer coupling. Using density functional theory calculations on the 1T-TaS2 surface, we reveal that CDW reconstruction, involving concerted small atomic displacements in the subsurface layer, results in a significant modification of the surface electronic structure, transforming it from a Mott insulator to a band insulator. This new form of surface reconstruction explains several previously unexplained observations on the 1T-TaS2 surface and has important implications for interpreting surface phenomena in CDW-ordered layered materials.

cond-mat.mtrl-sci↗

arXiv2017

Correlated electronic states at domain walls of a Mott-charge-density-wave insulator 1T-TaS2

Domain walls in interacting electronic systems can have distinct localized states, which often govern physical properties and may lead to unprecedented functionalities and novel devices. However, electronic states within domain walls themselves have not been clearly identified and understood for strongly correlated electron systems. Here, we resolve the electronic states localized on domain walls in a Mott-charge-density-wave(CDW) insulator 1T-TaS2 using scanning tunneling spectroscopy. We establish that the domain wall state decomposes into two nonconducting states located at the center of domain walls and edges of domains. Theoretical calculations reveal their atomistic origin as the local reconstruction of domain walls under the strong influence of electron correlation. Our results introduce a concept for the domain wall electronic property, the wall's own internal degrees of freedom, which is potentially related to the controllability of domain wall electronic properties.

cond-mat.str-el↗

arXiv2016

A mechano-chemical feedback underlies co-existence of qualitatively distinct cell polarity patterns within diverse cell populations

Cell polarization and directional cell migration can display random, persistent and oscillatory dynamic patterns. However, it is not clear if these polarity patterns can be explained by the same underlying regulatory mechanism. Here, we show that random, persistent and oscillatory migration accompanied by polarization can simultaneously occur in populations of melanoma cells derived from tumors with different degrees of aggressiveness. We demonstrate that all these patterns and the probabilities of their occurrence are quantitatively accounted for by a simple mechanism involving a spatially distributed, mechano-chemical feedback coupling the dynamically changing extracellular matrix (ECM)-cell contacts to the activation of signaling downstream of the Rho-family small GTPases. This mechanism is supported by a predictive mathematical model and extensive experimental validation, and can explain previously reported results for diverse cell types. In melanoma, this mechanism also accounts for the effects of genetic and environmental perturbations, including mutations linked to invasive cell spread. The resulting mechanistic understanding of cell polarity quantitatively captures the relationship between population variability and phenotypic plasticity, with the potential to account for a wide variety of cell migration states in diverse pathological and physiological conditions.

q-bio.CB↗

arXiv2015

Nanoscale manipulation of the Mott insulating state coupled to charge order in 1T-TaS2

Quantum states of strongly correlated electrons are of prime importance to understand exotic properties of condensed matter systems and the controllability over those states promises unique electronic devices such as a Mott memory. As a recent example, a ultrafast switching device was demonstrated using the transition between the correlated Mott insulating state and a hidden-order metallic state of a layered transition metal dichalcogenides 1T-TaS2. However, the origin of the hidden metallic state was not clear and only the macroscopic switching by laser pulse and carrier injection was reported. Here, we demonstrate the nanoscale manipulation of the Mott insulating state of 1T-TaS2. The electron pulse from a scanning tunneling microscope switches the insulating phase locally into a metallic phase which is textured with irregular domain walls in the charge density wave (CDW) order inherent to this Mott state. The metallic state is a novel correlated phase near the Mott criticality with a coherent feature at the Fermi energy, which is induced by the moderate reduction of electron correlation due to the decoherence in CDW. This work paves the avenue toward novel nanoscale electronic devices based on correlated electrons.

cond-mat.mtrl-sci↗

arXiv2013

Hidden Structural Order in Orthorhombic Tantalum Pentoxide (Ta$_2$O$_5$)

We investigate using first-principles calculations the atomic structure of the orthorhombic phase of Ta$_2$O$_5$. Although this structure has been studied for decades, the correct structural model is controversial owing to the complication of structural disorder. We identify a new low-energy high-symmetry structural model where all Ta and O atoms have correct formal oxidation states of +5 and -2, respectively, and the experimentally reported triangular lattice symmetry of the Ta sublattice appears dynamically at finite temperatures. To understand the complex atomic structure of the Ta$_2$O$_3$ plane, a triangular graph-paper representation is devised and used alongside oxidation state analysis to reveal infinite variations of the low-energy structural model. The structural disorder of Ta$_2$O$_5$ observed in experiments is attributed to the intrinsic structural variations, and oxygen vacancies that drive collective relaxation of the O sublattice.

cond-mat.mtrl-sci↗

arXiv2012

Semimetal-antiferromagnetic insulator transition in graphene induced by biaxial strain

We report first-principles calculations on antiferromagnetic spin ordering in graphene under biaxial strain. Using hybrid functional calculations, we found that semimetallic graphene sheets undergo a transition to antiferromagnetic insulators at a biaxial strain of 7.7% and that the band gap rapidly increases after the onset of this transition before reaching 0.9 eV at a biaxial strain of 12%. We examined the competition of the antiferromagnetic spin ordering with two-dimensional Peierls distortions upon biaxial strain, and found that the preceding antiferromagnetic insulator phase impedes the Peierls insulator phase. The antiferromagnetic insulator phase is destabilized upon carrier filling but robust up to moderate carrier densities. This work indicates that biaxially strained graphene represents a noble system where the electron-electron and electron-lattice interactions compete with each other in a simple but nontrivial way.

cond-mat.mtrl-sci↗

arXiv2011

Non-monotonic temperature dependent transport in graphene grown by Chemical Vapor Deposition

Temperature-dependent resistivity of graphene grown by chemical vapor deposition (CVD) is investigated. We observe in low mobility CVD graphene device a strong insulating behavior at low temperatures and a metallic behavior at high temperatures manifesting a non-monotonic in the temperature dependent resistivity.This feature is strongly affected by carrier density modulation. To understand this anomalous temperature dependence, we introduce thermal activation of charge carriers in electron-hole puddles induced by randomly distributed charged impurities. Observed temperature evolution of resistivity is then understood from the competition among thermal activation of charge carriers, temperature-dependent screening and phonon scattering effects. Our results imply that the transport property of transferred CVD-grown graphene is strongly influenced by the details of the environment

cond-mat.mes-hall↗

arXiv2011

Band gap opening by two-dimensional manifestation of Peierls instability in graphene

Using first-principles calculations of graphene having high-symmetry distortion or defects, we investigate band gap opening by chiral symmetry breaking, or intervalley mixing, in graphene and show an intuitive picture of understanding the gap opening in terms of local bonding and antibonding hybridizations. We identify that the gap opening by chiral symmetry breaking in honeycomb lattices is an ideal two-dimensional (2D) extension of the Peierls metal-insulator transition in 1D linear lattices. We show that the spontaneous Kekule distortion, a 2D version of the Peierls distortion, takes place in biaxially strained graphene, leading to structural failure. We also show that the gap opening in graphene antidots and armchair nanoribbons, which has been attributed usually to quantum confinement effects, can be understood with the chiral symmetry breaking.

cond-mat.mtrl-sci↗

arXiv2002

First-principles study of nucleation, growth, and interface structure of Fe/GaAs

We use density-functional theory to describe the initial stages of Fe film growth on GaAs(001), focusing on the interplay between chemistry and magnetism at the interface. Four features appear to be generic: (1) At submonolayer coverages, a strong chemical interaction between Fe and substrate atoms leads to substitutional adsorption and intermixing. (2) For films of several monolayers and more, atomically abrupt interfaces are energetically favored. (3) For Fe films over a range of thicknesses, both Ga- and As-adlayers dramatically reduce the formation energies of the films, suggesting a surfactant-like action. (4) During the first few monolayers of growth, Ga or As atoms are likely to be liberated from the interface and diffuse to the Fe film surface. Magnetism plays an important auxiliary role for these processes, even in the dilute limit of atomic adsorption. Most of the films exhibit ferromagnetic order even at half-monolayer coverage, while certain adlayer-capped films show a slight preference for antiferromagnetic order.

cond-mat.mtrl-sci↗