arXiv subjects

Supriyo Bandyopadhyay

Publications and source records attributed to Supriyo Bandyopadhyay.

At least 55 records · Page 3Linked to original sources

arXiv2019

Simulated annealing with time-varying strain in a dipole-coupled array of magnetostrictive nanomagnets

In a two-dimensional arrangement of closely spaced elliptical nanomagnets with in-plane magnetic anisotropy, whose major axes are aligned along columns and minor axes along rows, dipole coupling will make the magnetic ordering "ferromagnetic" along the columns and "anti-ferromagnetic" along the rows. Noise and other perturbations can drive the system out of this ground state configuration and pin it in a metastable state where the magnetization orientations will not follow this pattern. Internal energy barriers, sufficiently larger than the thermal energy kT, will prevent the system from leaving the metastable state and decaying spontaneously to the ground state. These barriers can be temporarily eroded by globally straining the nanomagnets with time-varying strain if the nanomagnets are magnetostrictive, which will allow the system to return to ground state after strain is removed. This is a hardware emulation of simulated annealing in an interacting many body system. Here, we demonstrate this function experimentally.

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arXiv2019

A Nanomagnetic Voltage-Tunable Correlation Generator between Two Random Bit Streams for Stochastic Computing

Graphical probabilistic circuit models of stochastic computing are more powerful than the predominant deep learning models, but also have more demanding requirements. For example, they require "programmable stochasticity", e.g. generating two random binary bit streams with tunable amount of correlation between the corresponding bits in the two streams. Electronic implementation of such a system would call for several components leaving a large footprint on a chip and dissipating excessive amount of energy. Here, we show an elegant implementation with just two dipole-coupled magneto-tunneling junctions (MTJ), with magnetostrictive soft layers, fabricated on a piezoelectric film. The resistance states of the two MTJs (high or low) encode the bits in the two streams. The first MTJ is driven to a random resistance state via a current or voltage generating spin transfer torque and/or voltage controlled magnetic anisotropy, while the second MTJ's resistance state is determined solely by dipole coupling with the first. The effect of dipole coupling can be varied with local strain applied to the second MTJ with a local voltage (~0.2 V) and that varies the correlation between the resistance states of the two MTJs and hence between the bits in the two streams (from 0% to 100%). This paradigm can be extended to arbitrary number of bit streams.

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arXiv2019

A Microwave Oscillator Based on a Single Straintronic Magneto-tunneling Junction

There is growing interest in exploring nanomagnetic devices as potential replacements for electronic devices (e.g. transistors) in digital switching circuits and systems. A special class of nanomagnetic devices are switched with electrically generated mechanical strain leading to electrical control of magnetism. Straintronic magneto-tunneling junctions (s-MTJ) belong to this category. Their soft layers are composed of two-phase multiferroics comprising a magnetostrictive layer elastically coupled to a piezoelectric layer. Here, we show that a single straintronic magneto-tunneling junction with a passive resistor can act as a microwave oscillator whose traditional implementation would have required microwave operational amplifiers, capacitors and resistors. This reduces device footprint and cost, while improving device reliability. This is an analog application of magnetic devices where magnetic interactions (interaction between the shape anisotropy, strain anisotropy, dipolar coupling field and spin transfer torque in the soft layer of the s-MTJ) are exploited to implement an oscillator with reduced footprint.

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arXiv2019

Low Barrier Nanomagnet Design for Binary Stochastic Neurons: Design Challenges for Real Nanomagnets with Fabrication Defects

Much attention has been focused on the design of low barrier nanomagnets (LBM), whose magnetizations vary randomly in time owing to thermal noise, for use in binary stochastic neurons (BSN) which are hardware accelerators for machine learning. The performance of BSNs depend on two important parameters: the correlation time associated with the random magnetization dynamics in a LBM, and the spin-polarized pinning current which stabilizes the magnetization of a LBM in a chosen direction within a chosen time. Here, we show that common fabrication defects in LBMs make these two parameters unpredictable since they are strongly sensitive to the defects. That makes the design of BSNs with real LBMs very challenging. Unless the LBMs are fabricated with extremely tight control, the BSNs which use them could be unreliable or suffer from poor yield.

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arXiv2019

Sensitivity of the Power Spectra of Magnetization Fluctuations in Low Barrier Nanomagnets to Barrier Height Modulation and Defects

Nanomagnets with small shape anisotropy energy barriers on the order of the thermal energy have unstable magnetization that fluctuates randomly in time. They have recently emerged as promising hardware platforms for stochastic computing and machine learning because the random magnetization states can be harnessed for probabilistic bits. Here, we have studied how the statistics of the magnetization fluctuations (e.g. the power spectral density) is affected by (i) moderate variations in the barrier height of the nanomagnet and (ii) the presence of structural defects, in order to assess how robust the computing platform is. We found that the power spectral density is relatively insensitive to moderate barrier height change and also relatively insensitive to the presence of small localized defects. However, extended (delocalized) defects, such as thickness variations over a significant fraction of the nanomagnet, affect the power spectral density very noticeably. As a result, small variations in the shape (causing small variations in the barrier height), or small localized defects, are relatively innocuous and tolerable, but significant variation of the nanomagnet thickness is not. Consequently, tight control over the nanomagnet thickness must be maintained for stochastic computing applications.

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arXiv2018

Hybrid magneto-dynamical modes in a single magnetostrictive nanomagnet on a piezoelectric substrate arising from magneto-elastic modulation of precessional dynamics

Magneto-elastic (or "straintronic") switching has emerged as an extremely energy-efficient mechanism for switching the magnetization of magnetostrictive nanomagnets in magnetic memory, logic and non-Boolean circuits. Here, we investigate the ultrafast magneto-dynamics associated with straintronic switching in a single quasi-elliptical magnetostrictive Co nanomagnet deposited on a piezoelectric PMN-PT substrate using time-resolved magneto-optical Kerr effect (TR-MOKE) measurements. The pulsed laser pump beam in the TR-MOKE plays a dual role: it causes precession of the nanomagnet's magnetization about an applied bias magnetic field and it also generates surface acoustic waves (SAWs) in the piezoelectric substrate that produce periodic strains in the magnetostrictive nanomagnet and modulate the precessional dynamics. This modulation gives rise to intriguing hybrid magneto-dynamical modes in the nanomagnet, with rich spin wave texture. The characteristic frequencies of these modes are 5-15 GHz, indicating that strain can affect magnetization in a magnetostrictive nanomagnet in time scales much smaller than 1 ns (~100 ps). This can enable ~10 GHz-range magneto-elastic nano-oscillators that are actuated by strain instead of a spin-polarized current, as well as ultrafast magneto-electric generation of spin waves for magnonic logic circuits, holograms, etc.

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arXiv2018

Magneto-elastic switching of magnetostrictive nanomagnets with in-plane shape anisotropy

We theoretically study the effect of a material defect (material void) on switching errors associated with magneto-elastic switching of magnetization in elliptical magnetostrictive nanomagnets having in-plane magnetic anisotropy. We find that the error probability increases significantly in the presence of the defect, indicating that magneto-elastic switching is particularly vulnerable to material imperfections. Curiously, there is a critical stress value that gives the lowest error probability in both defect-free and defective nanomagnets. The critical stress is much higher in defective nanomagnets than in defect-free ones. Since it is more difficult to generate the critical stress in small nanomagnets than in large nanomagnets (having the same energy barrier for thermal stability), it would be a challenge to downscale magneto-elastically switched nanomagnets in memory and other applications where reliable switching is required. This is likely to be further exacerbated by the presence of defects.

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arXiv2018

Energy-efficient switching of nanomagnets for computing: Straintronics and other methodologies

The need for increasingly powerful computing hardware has spawned many ideas stipulating, primarily, the replacement of traditional transistors with alternate "switches" that dissipate miniscule amounts of energy when they switch and provide additional functionality that are beneficial for information processing. An interesting idea that has emerged recently is the notion of using two-phase (piezoelectric/magnetostrictive) multiferroic nanomagnets with bistable (or multi-stable) magnetization states to encode digital information (bits), and switching the magnetization between these states with small voltages (that strain the nanomagnets) to carry out digital information processing. The switching delay is ~1 ns and the energy dissipated in the switching operation can be few to tens of aJ, which is comparable to, or smaller than, the energy dissipated in switching a modern-day transistor. Unlike a transistor, a nanomagnet is "non-volatile", so a nanomagnetic processing unit can store the result of a computation locally without refresh cycles, thereby allowing it to double as both logic and memory. These dual-role elements promise new, robust, energy-efficient, high-speed computing and signal processing architectures (usually non-Boolean and often non-von-Neumann) that can be more powerful, architecturally superior (fewer circuit elements needed to implement a given function) and sometimes faster than their traditional transistor-based counterparts. This topical review covers the important advances in computing and information processing with nanomagnets with emphasis on strain-switched multiferroic nanomagnets acting as non-volatile and energy-efficient switches - a field known as "straintronics". It also outlines key challenges in straintronics.

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arXiv2017

Hybrid straintronics and voltage-controlled-magnetic-anisotropy: Precessional switching of a perpendicular anisotropy magneto-tunneling junction without a magnetic field

We propose an all-electric implementation of a precessionally switched perpendicular magnetic anisotropy magneto-tunneling-junction (p-MTJ) based toggle memory cell where data is written with voltage-controlled-magnetic-anisotropy (VCMA) without requiring an in-plane magnetic field. The soft layer of the MTJ is a two-phase (magnetostrictive/piezoelectric) multiferroic which is electrically stressed to produce an effective in-plane magnetic field around which the magnetization precesses to complete a flip when the VCMA voltage pulse duration and the stress duration are independently adjusted to obtain a high switching probability. A two-terminal energy-efficient cell, that is compatible with crossbar architecture and high cell density, is designed.

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arXiv2016

Experimental demonstration of complete 180 degree reversal of magnetization in isolated Co-nanomagnets on a PMN-PT substrate with voltage generated strain

Rotating the magnetization of a shape anisotropic magnetostrictive nanomagnet with voltage-generated stress/strain dissipates much less energy than most other magnetization rotation schemes, but its application to writing bits in non-volatile magnetic memory has been hindered by the fundamental inability of stress/strain to rotate magnetization by full 180 degrees. Normally, stress/strain can rotate the magnetization of a shape anisotropic elliptical nanomagnet by only up to 90 degrees, resulting in incomplete magnetization reversal. Recently, we predicted that applying uniaxial stress sequentially along two different axes that are not collinear with the major or minor axis of the elliptical nanomagnet will rotate the magnetization by full 180 degrees. Here, we demonstrate this complete 180 degree rotation in elliptical Co-nanomagnets (fabricated on a piezoelectric substrate) at room temperature. The two stresses are generated by sequentially applying voltages to two pairs of shorted electrodes placed on the substrate such that the line joining the centers of the electrodes in one pair intersects the major axis of a nanomagnet at ~+30 degrees and the line joining the centers of the electrodes in the other pair intersects at ~ -30 degrees. A finite element analysis has been performed to determine the stress distribution underneath the nanomagnets when one or both pairs of electrodes are activated, and this has been approximately incorporated into a micromagnetic simulation of magnetization dynamics to confirm that the generated stress can produce the observed magnetization rotations. This result portends an extremely energy-efficient non-volatile "straintronic" memory technology predicated on writing bits in nanomagnets with electrically generated stress.

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arXiv2016

Image Processing with Dipole-Coupled Nanomagnets: Noise Suppression and Edge Enhancement Detection

Hardware based image processing offers speed and convenience not found in software-centric approaches. Here, we show theoretically that a two-dimensional periodic array of dipole-coupled elliptical nanomagnets, delineated on a piezoelectric substrate, can act as a dynamical system for specific image processing functions. Each nanomagnet has two stable magnetization states that encode pixel color (black or white). An image containing black and white pixels is first converted to voltage states and then mapped into the magnetization states of a nanomagnet array with magneto-tunneling junctions (MTJs). The same MTJs are employed to read out the processed pixel colors later. Dipole interaction between the nanomagnets implements specific image processing tasks such as noise reduction and edge enhancement detection. These functions are triggered by applying a global strain to the nanomagnets with a voltage dropped across the piezoelectric substrate. An image containing an arbitrary number of black and white pixels can be processed in few nanoseconds with very low energy cost.

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arXiv2016

Giant Voltage Manipulation of MgO-based Magnetic Tunnel Junctions via Localized Anisotropic Strain: a Potential Pathway to Ultra-Energy-Efficient Memory Technology

Strain-mediated voltage control of magnetization in piezoelectric/ferromagnetic systems is a promising mechanism to implement energy-efficient spintronic memory devices. Here, we demonstrate giant voltage manipulation of MgO magnetic tunnel junctions (MTJ) on a Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT) piezoelectric substrate with (001) orientation. It is found that the magnetic easy axis, switching field, and the tunnel magnetoresistance (TMR) of the MTJ can be efficiently controlled by strain from the underlying piezoelectric layer upon the application of a gate voltage. Repeatable voltage controlled MTJ toggling between high/low-resistance states is demonstrated. More importantly, instead of relying on the intrinsic anisotropy of the piezoelectric substrate to generate the required strain, we utilize anisotropic strain produced using local gating scheme, which is scalable and amenable to practical memory applications. Additionally, the adoption of crystalline MgO-based MTJ on piezoelectric layer lends itself to high TMR in the strain-mediated MRAM devices.

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arXiv2016

Geometry Effects in Switching of Nanomagnets with Strain: Reliability, Energy Dissipation and Clock Speed in Dipole-Coupled Nanomagnetic Logic

Strain-clocked dipole-coupled nanomagnetic logic is an energy-efficient Boolean logic paradigm whose progress has been stymied by its propensity for high error rates. In an effort to mitigate this problem, we have studied the effect of nanomagnet geometry on error rates, focusing on elliptical and cylindrical geometries. We had previously reported that the out-of-plane excursion of the magnetization vector during switching creates a precessional torque that is responsible for high switching error probability in elliptical nanomagnet geometries. The absence of this torque in cylindrical magnets portends lower error rates, but our simulations show that the error rate actually does not improve significantly compared to elliptical magnets while the switching becomes unacceptably slow. Here, we show that dipole coupled nanomagnetic logic can offer relatively high reliability (switching error probability < 10^-8), moderate clock speed (~ 100 MHz) and 2-3 orders of magnitude energy saving compared to CMOS devices, provided the shape anisotropy energy barrier of the magnet is increased to at least ~5.5 eV to allow engineering a stronger dipole coupling between neighboring nanomagnets.

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arXiv2016

Switching of Dipole Coupled Multiferroic Nanomagnets in the Presence of Thermal Noise: Reliability of Nanomagnetic Logic

The stress-induced switching behavior of a multiferroic nanomagnet, dipole coupled to a hard nanomagnet, is numerically studied by solving the stochastic Landau-Lifshitz-Gilbert (LLG) equation for a single domain macro-spin state. Different factors were found to affect the switching probability in the presence of thermal noise at room temperature: (i) dipole coupling strength, (ii) stress levels, and (iii) stress withdrawal rates (ramp rates). We report that the thermal broadening of the magnetization distribution causes large switching error rates. This could render nanomagnetic logic schemes that rely on dipole coupling to perform Boolean logic operations impractical whether they are clocked by stress or field or other means.

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arXiv2016

Experimental demonstration of acoustic wave induced magnetization switching of dipole coupled magnetostrictive nanomagnets for ultralow power computing

We report nanomagnetic switching with Acoustic Waves (AW) launched from interdigitated electrodes that modulate the stress anisotropy of elliptical cobalt nanoscale magnetostrictive magnets (340 nm x 270 nm x 12 nm) delineated on 128 degree Y-cut lithium niobate. The dipole-coupled nanomagnet pairs are in a single-domain state and are initially magnetized along the major axis of the ellipse, with their magnetizations parallel to each other. The magnetizations of nanomagnets having lower shape anisotropy are reversed upon acoustic wave propagation. Thereafter, the magnetization of these nanomagnets remains in the reversed state and demonstrate non-volatility. This executes a 'NOT' operation. This proof of acoustic wave induced magnetic state reversal in dipole-coupled nanomagnets implementing a 'NOT' gate operation could potentially lead to the development of extremely energy-efficient nanomagnetic logic. Furthermore, fabrication complexity is reduced immensely due to the absence of individual contacts to the nanomagnets, leading to lower energy dissipation

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arXiv2016

Switching the magnetization of magnetostrictive nanomagnets from single-domain to non-volatile vortex states with a surface acoustic wave

We report manipulation of the magnetic states of elliptical cobalt magnetostrictive nanomagnets (of nominal dimensions ~ 340 nm x 270 nm x 12 nm) delineated on bulk 128° Y-cut lithium niobate with Surface Acoustic Waves (SAWs) launched from interdigitated electrodes. Isolated nanomagnets that are initially magnetized to a single domain state with magnetization pointing along the major axis of the ellipse are driven into a vortex state by surface acoustic waves that modulate the stress anisotropy of these nanomagnets. The nanomagnets remain in the vortex state until they are reset by a strong magnetic field to the initial single domain state, making the vortex state non-volatile. This phenomenon is modeled and explained using a micromagnetic framework and could lead to the development of extremely energy efficient magnetization switching methodologies.

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arXiv2015

Incoherent magnetization dynamics in strain mediated switching of magnetostrictive nanomagnets

Micromagnetic studies of the magnetization change in magnetostrictive nanomagnets subjected to stress are performed for nanomagnets of different sizes. The interplay between demagnetization, exchange and stress anisotropy energies is used to explain the rich physics of size-dependent magnetization dynamics induced by modulating stress anisotropy in planar nanomagnets. These studies have important implications for strain mediated ultralow energy magnetization change in nanomagnets and its application in energy-efficient nanomagnetic computing systems.

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arXiv2015

Modulating spin relaxation in nanowires with infrared light at room temperature

Spintronic devices usually rely on long spin relaxation times and/or lengths for optimum performance. Therefore, the ability to modulate these quantities with an external agent offers unique possibilities. The dominant spin relaxation mechanism in most technologically important semiconductors is the D'yakonov-Perel' (DP) mechanism which vanishes if the spin carriers (electrons) are confined to a single conduction subband in a quantum wire grown in certain crystallographic directions, or polycrystalline quantum wires. Here, we report modulating the DP spin relaxation rate (and hence the spin relaxation length) in self assembled 50-nm diameter InSb nanowires with infrared light at room temperature. In the dark, almost all the electrons in the nanowires are in the lowest conduction subband at room temperature, resulting in near-complete absence of DP relaxation. This allows observation of spin-sensitive effects in the magnetoresistance. Under infrared illumination, electrons are photoexcited to higher subbands and the DP spin relaxation mechanism is revived, leading to a three-fold decrease in the spin relaxation length. Consequently, the spin sensitive effects are no longer observable under illumination. This phenomenon may have applications in spintronic room-temperature infrared photodetection.

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