arXiv subjects

Sven Mägdefessel

Publications and source records attributed to Sven Mägdefessel.

4 recordsLinked to original sources

arXiv2026

Characterizing the nitrogen-vacancy center singlet transition and its phonon sideband for absorption-based room-temperature magnetometry

Magnetometry with nitrogen-vacancy (NV) centers in diamond has shown great promise in recent years. In particular, absorption-based magnetometry techniques, employing a cavity to enhance the absorption length, can improve the contrast and sensitivity compared to conventional techniques based on reading out the NV$^-$ triplet fluorescence. The absorption techniques rely on magnetic-field-dependent absorption at the NV$^-$ singlet zero phonon line at 1042$\,$nm and its phonon sideband. In a cavity-enhanced spectroscopy approach, we study pump-laser- and microwave-induced cavity signal changes at room temperature over a spectral range of 680-1050$\,$nm. Through normalization, we eliminate the cavity-enhancement effect and provide quasi-single-pass values for the absorption and optically detected magnetic resonance (ODMR) contrast. The highest contrast is found at 1042$\,$nm, but multiple points of high contrast are found at the peaks of the phonon sideband. Additionally, cavity-enhanced ODMR contrasts in the range of 50-80$\,\%$ are presented. We further measure the broadband singlet absorption cross section at room temperature with a novel method through microwave-induced signal changes. This method is insensitive to pump-laser-induced signal changes by other defects and quantifies the room-temperature absorption strength of the singlet transition and its entire phonon sideband. We determine the absorption cross section at 1042$\,$nm to be $σ^{\,\bigstar}_{1042}=(0.89\pm0.14)\cdot 10^{-21}\,\text{m}^2$ or $σ^{\,\blacktriangle}_{1042}=(2.9\pm0.5)\cdot 10^{-21}\,\text{m}^2$. depending on the employed 532$\,$nm NV$^-$ absorption cross section.

quant-ph↗

arXiv2026

Delta-Doped Diamond via in-situ Plasma-Distance Control

We present an approach for the CVD growth of diamond, where the sample is placed in a defined distance from the reactor baseplate, to which the plasma couples. We observe two previously unknown growth regimes. In the first case, the sample is positioned within three to five millimeters of the plasma, leading to a decreased growth rate, compared to a position inside the plasma and, additionally, to an increased nitrogen incorporation, allowing the fabrication of delta-doped layers with a thickness below 30 nm. In another regime, where the sample is more than 10 mm away from the plasma, no growth is observed. Instead, we assume a deposition of nitrogen-rich species on the diamond surface, which is incorporated during the growth of the following layer. All fabricated layers show NV emission, where the intensity correlates with the nitrogen incorporation. The growth techniques could allow the fabrication of highly doped thin films for quantum sensing applications, as well as layers with low NV concentration, for quantum computing. The new approaches are applicable not only for nitrogen incorporation but also for other defects, for example, phosphorus, which could open up new avenues for diamond-based electronics.

cond-mat.mtrl-sci↗

arXiv2023

Understanding the Frequency Dependence of Capacitance Measurements of Irradiated Silicon Detectors

Capacitance-voltage (CV) measurements are a widely used technique in silicon detector physics. It gives direct information about the full depletion voltage and the effective doping concentration. However, for highly irradiated sensors, the measured data differs significantly from the usual shape which makes the extraction of the afore mentioned parameters less precise to not possible. We present an explanation for the obseved frequency dependence and based on that, a method to extract the desired sensor parameters.

physics.ins-det↗

arXiv2022

Characterization of Passive CMOS Strip Sensors

Recent advances in CMOS imaging sensor technology , e.g. in CMOS pixel sensors, have proven that the CMOS process is radiation tolerant enough to cope with certain radiation levels required for tracking layers in hadron collider experiments. With the ever-increasing area covered by silicon tracking detectors cost effective alternatives to the current silicon sensors and more integrated designs are desirable. This article describes results obtained from laboratory measurements of silicon strip sensors produced in a passive p-CMOS process. Electrical characterization and charge collection measurements with a 90Sr source and a laser with infrared wavelength showed no effect of the stitching process on the performance of the sensor.

physics.ins-det↗