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arXiv · 2301.09371

Understanding the Frequency Dependence of Capacitance Measurements of Irradiated Silicon Detectors

Sven Mägdefessel·Riccardo Mori·Niels Sorgenfrei·Ulrich Parzefall
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Abstract

Capacitance-voltage (CV) measurements are a widely used technique in silicon detector physics. It gives direct information about the full depletion voltage and the effective doping concentration. However, for highly irradiated sensors, the measured data differs significantly from the usual shape which makes the extraction of the afore mentioned parameters less precise to not possible. We present an explanation for the obseved frequency dependence and based on that, a method to extract the desired sensor parameters.

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Sven Mägdefessel, Riccardo Mori, Niels Sorgenfrei, Ulrich Parzefall. 2023-01-23. Understanding the Frequency Dependence of Capacitance Measurements of Irradiated Silicon Detectors. https://arxiv.org/abs/2301.09371

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