arXiv subjects

T. Heinzel

Publications and source records attributed to T. Heinzel.

46 records · Page 3Linked to original sources

arXiv1999

Metal-Insulator Transition in a 2-Dimensional System with an Easy Spin Axis

The low-temperature resistivity of a SiGe 2-dimensional hole gas has been studied using the gate controlled carrier density as a parameter. A metal-insulator transition is seen both in the temperature and in the electric field behaviour. Values of 1 for the dynamical exponent and 2.85 for the correlation length exponent are obtained from scaling plots. No quenching of the metallic phase in a parallel magnetic field is observed. Since in our system there is an easy axis for magnetization, this result supports the hypothesis that the transition is related to spin interactions.

cond-mat.mes-hall↗

arXiv1999

Coexistence of Weak Localization and a Metallic Phase in Si/SiGe Quantum Wells

Magnetoresistivity measurements on p-type Si/SiGe quantum wells reveal the coexistence of a metallic behavior and weak localization. Deep in the metallic regime, pronounced weak localization reduces the metallic behavior around zero magnetic field without destroying it. In the insulating phase, a positive magnetoresistivity emerges close to B=0, possibly related to spin-orbit interactions.

cond-mat.mes-hall↗

arXiv1999

In-plane gate single-electron transistor in Ga[Al]As fabricated by scanning probe lithography

A single-electron transistor has been realized in a Ga[Al]As heterostructure by oxidizing lines in the GaAs cap layer with an atomic force microscope. The oxide lines define the boundaries of the quantum dot, the in-plane gate electrodes, and the contacts of the dot to source and drain. Both the number of electrons in the dot as well as its coupling to the leads can be tuned with an additional, homogeneous top gate electrode. Pronounced Coulomb blockade oscillations are observed as a function of voltages applied to different gates. We find that, for positive top-gate voltages, the lithographic pattern is transferred with high accuracy to the electron gas. Furthermore, the dot shape does not change significantly when in-plane voltages are tuned.

cond-mat.mes-hall↗

arXiv1999

Shifting a Quantum Wire through a Disordered Crystal: Observation of Conductance Fluctuations in Real Space

A quantum wire is spatially displaced by suitable electric fields with respect to the scatterers inside a semiconductor crystal. As a function of the wire position, the low-temperature resistance shows reproducible fluctuations. Their characteristic temperature scale is a few hundred millikelvin, indicating a phase-coherent effect. Each fluctuation corresponds to a single scatterer entering or leaving the wire. This way, scattering centers can be counted one by one.

cond-mat.mes-hall↗

arXiv1999

Non-Gaussian distribution of nearest-neighbour Coulomb peak spacings in metallic single electron transistors

The distribution of nearest-neighbour spacings of Coulomb blockade oscillation peaks in normal conducting aluminum single electron transistors is found to be non-Gaussian. A pronounced tail to reduced spacings is observed, which we attribute to impurity-specific parametric charge rearrangements close to the transistor. Our observation may explain the absence of a Wigner-Dyson distribution in the experimental nearest-neighbour spacing distributions in semiconductor quantum dots.

cond-mat.mes-hall↗

arXiv1999

Mode Spectroscopy and Level Coupling in Ballistic Electron Waveguides

A tunable quantum point contact with modes occupied in both transverse directions is studied by magnetotransport experiments. We use conductance quantization of the one-dimensional subbands as a tool to determine the mode spectrum. A magnetic field applied along the direction of the current flow couples the modes. This can be described by an extension of the Darwin-Fock model. Anticrossings are observed as a function of the magnetic field, but not for zero field or perpendicular field directions, indicating coupling of the subbands due to nonparabolicity in the electrical confinement.

cond-mat.mes-hall↗

arXiv1998

Variation of elastic scattering across a quantum well

The Drude scattering times of electrons in two subbands of a parabolic quantum well have been studied at constant electron sheet density and different positions of the electron distribution along the growth direction. The scattering times obtained by magnetotransport measurements decrease as the electrons are displaced towards the well edges, although the lowest-subband density increases. By comparing the measurements with calculations of the scattering times of a two-subband system, new information on the location of the relevant scatterers and the anisotropy of intersubband scattering is obtained. It is found that the scattering time of electrons in the lower subband depends sensitively on the position of the scatterers, which also explains the measured dependence of the scattering on the carrier density. The measurements indicate segregation of scatterers from the substrate side towards the quantum well during growth.

cond-mat.mes-hall↗

arXiv1998

Individual scatterers as microscopic origin of equilibration between spin- polarized edge channels in the quantum Hall regime

The equilibration length between spin-polarized edge states in the Quantum Hall regime is measured as a function of a gate voltage applied to an electrode on top of the edge channels. Reproducible fluctuations in the coupling are observed and interpreted as a mesoscopic fingerprint of single spin-flip scatterers which are turned on and off. A model to analyze macroscopic edge state coupling in terms of individual scatterers is developed, and characteristic values for these scatterers in our samples are extracted. For all samples investigated, the distance between spin-flip scatterers lies between the Drude and the quantum scattering length.

cond-mat.mes-hall↗

arXiv1998

Metal-Insulator Transition in a Disordered Two-Dimensional Electron Gas in GaAs-AlGaAs at zero Magnetic Field

A metal-insulator transition in two-dimensional electron gases at B=0 is found in Ga(Al)As heterostructures, where a high density of self-assembled InAs quantum dots is incorporated just 3 nm below the heterointerface. The transition occurs at resistances around h/e^2 and critical carrier densities of 1.2 10^11cm^-2. Effects of electron-electron interactions are expected to be rather weak in our samples, while disorder plays a crucial role.

cond-mat.mes-hall↗

arXiv1997

Statistics of conductance oscillations of a quantum dot in the Coulomb-blockade regime

The fluctuations and the distribution of the conductance peak spacings of a quantum dot in the Coulomb-blockade regime are studied and compared with the predictions of random matrix theory (RMT). The experimental data were obtained in transport measurements performed on a semiconductor quantum dot fabricated in a GaAs-AlGaAs heterostructure. It is found that the fluctuations in the peak spacings are considerably larger than the mean level spacing in the quantum dot. The distribution of the spacings appears Gaussian both for zero and for non-zero magnetic field and deviates strongly from the RMT-predictions.

cond-mat.mes-hall↗