arXiv subjects

T. Hofmann

Publications and source records attributed to T. Hofmann.

17 recordsLinked to original sources

arXiv2021

Microwave graphs analogs for the voltage drop in three-terminal devices with orthogonal, unitary and symplectic symmetry

Transmission measurements through three-port microwave graphs are performed in a symmetric setting, in analogy to three-terminal voltage drop devices with orthogonal, unitary, and symplectic symmetry. The terminal used as a probe is symmetrically located between two chaotic graphs, each graph is connected to one port, the input and the output, respectively. The analysis of the experimental data exhibit the weak localization and antilocalization phenomena in a clear fashion. We find a good agreement with theoretical predictions, provided that the effect of dissipation and imperfect coupling to the ports are taken into account.

cond-mat.other↗

arXiv2019

Recent Results from Polycrystalline CVD Diamond Detectors

Diamond is a material in use at many nuclear and high energy facilities due to its inherent radiation tolerance and ease of use. We have characterized detectors based on chemical vapor deposition (CVD) diamond before and after proton irradiation. We present preliminary results of the spatial resolution of unirradiated and irradiated CVD diamond strip sensors. In addition, we measured the pulse height versus particle rate of unirradiated and irradiated polycrystalline CVD (pCVD) diamond pad detectors up to a particle flux of $20\,\mathrm{MHz/cm^2}$ and a fluence up to $4 \times 10^{15}\,n/\mathrm{cm^2}$.

physics.ins-det↗

arXiv2019

Fabrication of optical components with nm- to mm-scale critical features using three-dimensional direct laser writing

A powerful fabrication strategy based on three-dimensional direct laser writing for the rapid prototyping of opto-mechanical components with critical features ranging from several hundred nm to a few mm is demonstrated here. As an example, a simple optical fiber connector with optical and mechanical guides as well as integrated micro-optical elements with nano-structured surfaces is designed and fabricated. In contrast to established three-dimensional direct laser writing, two different polymers are combined in the fabrication process in order to achieve a drastic reduction in fabrication time by substantially reducing the "optical tool path". A good agreement between the as-fabricated connector and nominal dimensions has been obtained. The developed approach allows the rapid prototyping of optomechanical components with multi-scale critical features. It is, therefore, envisioned to substantially accelerate the development cycle by integrating functional mechanical and optical elements in a single component.

physics.app-ph↗

arXiv2017

Broadband near-infrared antireflection coatings fabricated by three dimensional direct laser writing

Three-dimensional direct laser writing via two photon polymerization is used to fabricate anti-reflective structured surfaces composed of sub-wavelength conicoid features optimized to operate over a wide bandwidth in the near-infrared range from 3700 cm$^{-1}$ to 6600 cm$^{-1}$ (2.7 to 1.52 $\mu$m). Analytic Bruggemann effective medium calculations are used to predict nominal geometric parameters such as the fill factor of the constitutive conicoid features of the anti-reflective structured surfaces presented here. The performance of the anti-reflective structured surfaces was investigated experimentally using infrared transmission measurements. An enhancement of the transmittance by 1.35\% to 2.14\% over a broadband spectral range from 3700 cm$ ^{-1} $ to 6600 cm$^{-1}$ (2.7 to 1.52 $\mu$m) was achieved. We further report on finite-element-based reflection and transmission data using three-dimensional model geometries for comparison. A good agreement between experimental results and the finite-element-based numerical analysis is observed once as-fabricated deviations from the nominal conicoid forms are included in the model. Three-dimensional direct laser writing is demonstrated here as an efficient method for the fabrication and optimization of anti-reflective structured surfaces designed for the infrared spectral range.

physics.optics↗

arXiv2016

Anisotropic Contrast Optical Microscope

An optical microscope is described that reveals contrast in the Mueller matrix images of a thin, transparent or semi-transparent specimen located within an anisotropic object plane (anisotropic filter). The specimen changes the anisotropy of the filter and thereby produces contrast within the Mueller matrix images. Here we use an anisotropic filter composed of a semi-transparent, nanostructured thin film with sub-wavelength thickness placed within the object plane. The sample is illuminated as in common optical microscopy but the light is modulated in its polarization using combinations of linear polarizers and phase plate (compensator) to control and analyze the state of polarization. Direct generalized ellipsometry data analysis approaches permit extraction of fundamental Mueller matrix object plane images dispensing with the need of Fourier expansion methods. Generalized ellipsometry model approaches are used for quantitative image analyses. We demonstrate the anisotropic contrast optical microscope by measuring lithographically defined micro-patterned anisotropic filters, and we quantify the adsorption of an organic self-assembled monolayer film onto the anisotropic filter. In our current instrument we estimate the limit of detection for organic volumetric mass within the object plane of $\approx$ 49 fg within $\approx$ 7$\times$7~$\mu$m$^2$ object surface area. Compared to a quartz crystal microbalance with dissipation instrumentation, where contemporary limits require a total load of $\approx$ 500~pg for detection, the instrumentation demonstrated here improves sensitivity to a total mass required for detection by 4 orders of magnitude. We present further applications to detection of nanoparticles, to novel approaches for imaging chromatography, and to new contrast modalities for observations on living cells.

physics.ins-det↗

arXiv2015

Anisotropy, phonon modes, and free charge carrier parameters in monoclinic $\beta$-gallium oxide single crystals

We derive a dielectric function tensor model approach to render the optical response of monoclinic and triclinic symmetry materials with multiple uncoupled infrared and farinfrared active modes. We apply our model approach to monoclinic $\beta$-Ga$_2$O$_3$ single crystal samples. Surfaces cut under different angles from a bulk crystal, (010) and ($\bar{2}$01), are investigated by generalized spectroscopic ellipsometry within infrared and farinfrared spectral regions. We determine the frequency dependence of 4 independent $\beta$-Ga$_2$O$_3$ Cartesian dielectric function tensor elements by matching large sets of experimental data using a point by point data inversion approach. From matching our monoclinic model to the obtained 4 dielectric function tensor components, we determine all infared and farinfrared active transverse optic phonon modes with $A_u$ and $B_u$ symmetry, and their eigenvectors within the monoclinic lattice. We find excellent agreement between our model results and results of density functional theory calculations. We derive and discuss the frequencies of longitudinal optical phonons in $\beta$-Ga$_2$O$_3$. We derive and report density and anisotropic mobility parameters of the free charge carriers within the tin doped crystals. We discuss the occurrence of longitudinal phonon plasmon coupled modes in $\beta$-Ga$_2$O$_3$ and provide their frequencies and eigenvectors. We also discuss and present monoclinic dielectric constants for static electric fields and frequencies above the reststrahlen range, and we provide a generalization of the Lyddane-Sachs-Teller relation for monoclinic lattices with infrared and farinfrared active modes. We find that the generalized Lyddane-Sachs-Teller relation is fulfilled excellently for $\beta$-Ga$_2$O$_3$.

cond-mat.mtrl-sci↗

arXiv2015

Infrared dielectric function, phonon modes and free-charge carrier properties of high-Al-content Al$_x$Ga$_{1-x}$N alloys determined by mid-infrared spectroscopic ellipsometry and optical Hall effect

The phonon mode parameters and anisotropic mid-infrared dielectric function tensor components of high- Al-content Al$_x$Ga$_{1-x}$N alloys in dependence of the Al content $x$ are precisely determined from mid-infrared spectroscopic ellipsometry measurements for a set of high-quality Si-doped Al$_x$Ga$_{1-x}$N epitaxial layers on 4H-SiC substrates. Two-mode behavior of the $E_1$(TO) modes and one-mode behavior of the $A_1$(LO) mode are found in agreement with previous Raman scattering spectroscopy reports. The composition dependencies of the IR active phonon frequency parameters are established and a discussion on the silent $B_1$ mode that may be disorder activated is provided. The static dielectric constants in dependence of $x$ are determined by using the best-match model derived phonon mode frequency and high-frequency dielectric constant parameters and applying the Lydanne-Sachs-Teller relation. The effective mass parameter in high-Al-content Al$_x$Ga$_{1-x}$N alloys and its composition dependence are determined from mid-infrared optical Hall effect measurements. Furtheremore, the free electron concentration $N$ and mobility parameters $\mu$ of Al$_x$Ga$_{1-x}$N films with similar Si doping levels are investigated as function of the Al content, $x$ and discussed.

cond-mat.mtrl-sci↗

arXiv2015

Experimental results of the laserwire emittance scanner for LINAC4 at CERN

Within the framework of the LHC Injector Upgrade (LIU), the new LINAC4 is currently being commissioned to replace the existing LINAC2 proton source at CERN. After the expected completion at the end of 2016, the LINAC4 will accelerate H- ions to 160 MeV. To measure the transverse emittance of the H- beam, a method based on photo-detachment is proposed. This system will operate using a pulsed laser with light delivered via an optical fibre and subsequently focused through a thin slice of the H- beam. The laser photons have sufficient energy to detach the outer electron and create H0/e- pairs. In a downstream dipole, the created H0 particles are separated from the unstripped H- ions and their distribution is measured with a dedicated detector. By scanning the focused laser across the H- beam, the transverse emittance of the H- beam can be reconstructed. This paper will first discuss the concept, design and simulations of the laser

physics.acc-ph↗

arXiv2015

Demonstration of a laserwire emittance scanner for the CERN LINAC4 H- Beam

A non-invasive, compact laserwire system has been developed to measure the transverse emittance of an H- beam and has been demonstrated at the new LINAC4 injector for the LHC at CERN. Light from a low power, pulsed laser source is conveyed via fibre to collide with the H- beam, a fraction of which is neutralized and then intercepted by a downstream diamond detector. Scanning the focused laser across the H- beam and measuring the distribution of the photo-neutralized particles enables the transverse emittance to be reconstructed. The vertical phase-space distribution of a 3 MeV beam during LINAC4 commissioning has been measured by the laserwire and verified with a conventional slit and grid method.

physics.acc-ph↗

arXiv2015

Cavity-enhanced optical Hall effect in two-dimensional free charge carrier gases detected at terahertz frequencies

The effect of a tunable, externally coupled Fabry-P\'{e}rot cavity to resonantly enhance the optical Hall effect signatures at terahertz frequencies produced by a traditional Drude-like two-dimensional electron gas is shown and discussed in this communication. As a result, the detection of optical Hall effect signatures at conveniently obtainable magnetic fields, for example by neodymium permanent magnets, is demonstrated. An AlInN/GaN-based high electron mobility transistor structure grown on a sapphire substrate is used for the experiment. The optical Hall effect signatures and their dispersions, which are governed by the frequency and the reflectance minima and maxima of the externally coupled Fabry-P\'{e}rot cavity, are presented and discussed. Tuning the externally coupled Fabry-P\'{e}rot cavity strongly modifies the optical Hall effect signatures, which provides a new degree of freedom for optical Hall effect experiments in addition to frequency, angle of incidence and magnetic field direction and strength.

cond-mat.mes-hall↗

arXiv2014

An integrated mid-infrared, far-infrared and terahertz optical Hall effect instrument

We report on the development of the first integrated mid-infrared, far-infrared and terahertz optical Hall effect instrument, covering an ultra wide spectral range from 3 cm$^{-1}$ to 7000 cm$^{-1}$ (0.1-210 THz or 0.4-870 meV). The instrument comprises four sub-systems, where the magneto-cryostat-transfer sub-system enables the usage of the magneto-cryostat sub-system with the mid-infrared ellipsometer sub-system, and the far-infrared/terahertz ellipsometer sub-system. Both ellipsometer sub-systems can be used as variable angle-of-incidence spectroscopic ellipsometers in reflection or transmission mode, and are equipped with multiple light sources and detectors. The ellipsometer sub-systems are operated in polarizer-sample-rotating-analyzer configuration granting access to the upper left $3\times 3$ block of the normalized $4\times 4$ Mueller matrix. The closed cycle magneto-cryostat sub-system provides sample temperatures between room temperature and 1.4 K and magnetic fields up to 8 T, enabling the detection of transverse and longitudinal magnetic field-induced birefringence. We discuss theoretical background and practical realization of the integrated mid-infrared, far-infrared and terahertz optical Hall effect instrument, as well as acquisition of optical Hall effect data and the corresponding model analysis procedures. Exemplarily, epitaxial graphene grown on 6H-SiC, a tellurium doped bulk GaAs sample and an AlGaN/GaN high electron mobility transistor structure are investigated. The selected experimental datasets display the full spectral, magnetic field and temperature range of the instrument and demonstrate data analysis strategies. Effects from free charge carriers in two dimensional confinement and in a volume material, as well as quantum mechanical effects (inter-Landau-level transitions) are observed and discussed exemplarily.

cond-mat.mes-hall↗

arXiv2013

Structural and optical properties of cobalt slanted columnar thin films conformally coated with graphene by chemical vapor deposition

A slanted cobalt sculptured columnar thin film was fabricated using glancing angle deposition, and coated subsequently with graphene using a low temperature chemical vapor deposition process. The graphene deposition process preserves shape and geometry of the sculptured thin film, which was confirmed by scanning electron microscopy. According to the Raman spectroscopy results, the graphene coating is two to three monolayers thick and has a high defect concentration. The graphene coverage within the sculptured thin film is determined from generalized spectroscopic ellipsometry using a generalized anisotropic Bruggeman effective medium approximation. The graphene coverage as well as structural parameters of the thin film agree excellently with electron microscopy and Raman observations, and suggest that the graphene coating is conformal.

cond-mat.mtrl-sci↗

arXiv2013

Free-charge carrier parameters of n-type, p-type and compensated InN:Mg determined by Infrared Spectroscopic Ellipsometry

Infrared spectroscopic ellipsometry is applied to investigate the free-charge carrier properties of Mg-doped InN films. Two representative sets of In-polar InN grown by molecular beam epitaxy with Mg concentrations ranging from $1.2\times10^{17}$ cm$^{-3}$ to $8\times10^{20}$ cm$^{-3}$ are compared. P-type conductivity is indicated for the Mg concentration range of $1\times10^{18}$ cm$^{-3}$ to $9\times10^{19}$ cm$^{-3}$ from a systematic investigation of the longitudinal optical phonon plasmon broadening and the mobility parameter in dependence of the Mg concentration. A parameterized model that accounts for the phonon-plasmon coupling is applied to determine the free-charge carrier concentration and mobility parameters in the doped bulk InN layer as well as the GaN template and undoped InN buffer layer for each sample. The free-charge carrier properties in the second sample set are consistent with the results determined in a comprehensive analysis of the first sample set reported earlier [Sch\"oche et al., J. Appl. Phys. 113, 013502 (2013)]. In the second set, two samples with Mg concentration of $2.3\times10^{20}$ cm$^{-3}$ are identified as compensated n-type InN with very low electron concentrations which are suitable for further investigation of intrinsic material properties that are typically governed by high electron concentrations even in undoped InN. The compensated n-type InN samples can be clearly distinguished from the p-type conductive material of similar plasma frequencies by strongly reduced phonon plasmon broadening.

physics.optics↗

arXiv2013

Electron effective mass in Al$_{0.72}$Ga$_{0.28}$N alloys determined by mid-infrared optical Hall effect

The effective electron mass parameter in Si-doped Al$_{0.72}$Ga$_{0.28}$N is determined to be $m^\ast=(0.336\pm0.020)\,m_0$ from mid-infrared optical Hall effect measurements. No significant anisotropy of the effective electron mass parameter is found supporting theoretical predictions. Assuming a linear change of the effective electron mass with the Al content in AlGaN alloys and $m^\ast=0.232\,m_0$ for GaN, an average effective electron mass of $m^\ast=0.376\,m_0$ can be extrapolated for AlN. The analysis of mid-infrared spectroscopic ellipsometry measurements further confirms the two phonon mode behavior of the E$_1$(TO) and one phonon mode behavior of the A$_1$(LO) phonon mode in high-Al-content AlGaN alloys as seen in previous Raman scattering studies.

physics.optics↗

arXiv2013

Polarization selection rules for inter-Landau level transitions in epitaxial graphene revealed by infrared optical Hall effect

We report on polarization selection rules of inter-Landau level transitions using reflection-type optical Hall effect measurements from 600 to 4000 cm-1 on epitaxial graphene grown by thermal decomposition of silicon carbide. We observe symmetric and anti-symmetric signatures in our data due to polarization preserving and polarization mixing inter-Landau level transitions, respectively. From field-dependent measurements we identify that transitions in decoupled graphene mono-layers are governed by polarization mixing selection rules, whereas transitions in coupled graphene mono-layers are governed by polarization preserving selection rules. The selection rules may find explanation by different coupling mechanisms of inter-Landau level transitions with free charge carrier magneto-optic plasma oscillations.

cond-mat.mes-hall↗

arXiv2012

Neutron diffraction study of spin and charge ordering in SrFeO(3-delta)

We report a comprehensive neutron diffraction study of the crystal structure and magnetic order in a series of single-crystal and powder samples of SrFeO$_{3-\delta}$ in the vacancy range $0 \leq \delta \leq 0.23$. The data provide detailed insights into the interplay between the oxygen vacancy order and the magnetic structure of this system. In particular, a crystallographic analysis of data on Sr8Fe8O23 revealed a structural transition between the high-temperature tetragonal and a low-temperature monoclinic phase with a critical temperature T = 75 K, which originates from charge ordering on the Fe sublattice and is associated with a metal-insulator transition. Our experiments also revealed a total of seven different magnetic structures of SrFeO$_{3-\delta}$ in this range of $\delta$, only two of which (namely an incommensurate helix state in SrFeO3 and a commensurate, collinear antiferromagnetic state in Sr4Fe4O11) had been identified previously. We present a detailed refinement of some of the magnetic ordering patterns and discuss the relationship between the magneto-transport properties of SrFeO$_{3-\delta}$ samples and their phase composition and magnetic microstructure.

cond-mat.str-el↗

arXiv2011

A phantom force induced by the tunneling current, characterized on Si(111)

Simultaneous measurements of tunneling currents and atomic forces on surfaces and adsorbates provide new insights into the electronic and structural properties of matter on the atomic scale. We report on experimental observations and calculations of a strong impact the tunneling current can have on the measured force, which arises when the resistivity of the sample cannot be neglected. We present a study on Si(111)-7\times7 with various doping levels, but this effect is expected to occur on other low-conductance samples like adsorbed molecules, and is likely to strongly affect Kelvin probe measurements on the atomic scale.

cond-mat.mtrl-sci↗