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T. Ihn

Publications and source records attributed to T. Ihn.

130 records · Page 8Linked to original sources

Metal-Insulator Transition in a 2-Dimensional System with an Easy Spin Axis

The low-temperature resistivity of a SiGe 2-dimensional hole gas has been studied using the gate controlled carrier density as a parameter. A metal-insulator transition is seen both in the temperature and in the electric field behaviour. Values of 1 for the dynamical exponent and 2.85 for the correlation length exponent are obtained from scaling plots. No quenching of the metallic phase in a parallel magnetic field is observed. Since in our system there is an easy axis for magnetization, this result supports the hypothesis that the transition is related to spin interactions.

cond-mat.mes-hall↗

Coexistence of Weak Localization and a Metallic Phase in Si/SiGe Quantum Wells

Magnetoresistivity measurements on p-type Si/SiGe quantum wells reveal the coexistence of a metallic behavior and weak localization. Deep in the metallic regime, pronounced weak localization reduces the metallic behavior around zero magnetic field without destroying it. In the insulating phase, a positive magnetoresistivity emerges close to B=0, possibly related to spin-orbit interactions.

cond-mat.mes-hall↗

A low-temperature dynamic mode scanning force microscope operating in high magnetic fields

A scanning force microscope was implemented operating at temperatures below 4.2K and in magnetic fields up to 8T. Piezoelectric quartz tuning forks were employed for non optical tip-sample distance control in the dynamic operation mode. Fast response was achieved by using a phase-locked loop for driving the mechanical oscillator. Possible applications of this setup for various scanning probe techniques are discussed.

cond-mat↗

Variation of elastic scattering across a quantum well

The Drude scattering times of electrons in two subbands of a parabolic quantum well have been studied at constant electron sheet density and different positions of the electron distribution along the growth direction. The scattering times obtained by magnetotransport measurements decrease as the electrons are displaced towards the well edges, although the lowest-subband density increases. By comparing the measurements with calculations of the scattering times of a two-subband system, new information on the location of the relevant scatterers and the anisotropy of intersubband scattering is obtained. It is found that the scattering time of electrons in the lower subband depends sensitively on the position of the scatterers, which also explains the measured dependence of the scattering on the carrier density. The measurements indicate segregation of scatterers from the substrate side towards the quantum well during growth.

cond-mat.mes-hall↗