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T. Nozaki

Publications and source records attributed to T. Nozaki.

13 recordsLinked to original sources
arXiv2019

Search for the magnetic monopole at a magnetoelectric surface

We show, by solving Maxwell's equations, that an electric charge on the surface of a slab of a linear magnetoelectric material generates an image magnetic monopole below the surface provided that the magnetoelectric has a diagonal component in its magnetoelectric response. The image monopole, in turn, generates an ideal monopolar magnetic field outside of the slab. Using realistic values of the electric- and magnetic- field susceptibilties, we calculate the magnitude of the effect for the prototypical magnetoelectric material Cr$_2$O$_3$. We use low energy muon spin rotation to measure the strength of the magnetic field generated by charged muons as a function of their distance from the surface of a Cr$_2$O$_3$ films, and show that the results are consistent with the existence of the monopole. We discuss other possible routes to detecting the monopolar field, and show that, while the predicted monopolar field generated by Cr$_2$O$_3$ is above the detection limit for standard magnetic force microscopy, detection of the field using this technique is prevented by surface charging effects.

cond-mat.mtrl-sci↗
arXiv2018

Voltage-induced precessional switching at zero-bias magnetic field in a conically magnetized free layer

Voltage-induced magnetization dynamics in a conically magnetized free layer with an elliptic cylinder shape is theoretically studied on the basis of the macrospin model. It is found that an application of voltage pulse can induce the precessional switching of magnetization even at zero-bias magnetic field, which is of substantial importance for device applications such as voltage-controlled nonvolatile memory. Analytical expressions of the conditions for precessional switching are derived.

cond-mat.mtrl-sci↗
arXiv2017

Lateral ferromagnetic domain control in Cr2O3/Pt/Co positive exchange bias system

We investigated the perpendicular exchange bias (PEB) switching from negative- to positive-exchange bias state for Cr2O3/Pt/Co exchange coupling thin film system exhibiting positive exchange bias phenomena. By changing Pt spacer layer thickness or measurements temperature, we demonstrated the control of two kind of intermediate state of the switching; the double hysteresis loop indicating local, non-averaged PEB, and single hysteresis loop indicating averaged PEB. We proposed the way to control the lateral ferromagnetic domain though the control of PEB magnitude.

cond-mat.mtrl-sci↗
arXiv2016

Enhancement of perpendicular magnetic anisotropy and its electric field-induced change through interface engineering in Cr/Fe/MgO

Recently, perpendicular magnetic anisotropy (PMA) and its voltage control (VC) was demonstrated for Cr/Fe/MgO (Physical Review Applied 5, 044006 (2016)). In this study, we shed a light on the origin of large voltage-induced anisotropy change in Cr/Fe/MgO. Analysis of the chemical structure of Cr/Fe/MgO revealed the existence of Cr atoms in the proximity of the Fe/MgO interface, which can affect both magnetic anisotropy (MA) and its VC. We showed that PMA and its VC can be enhanced by controlled Cr doping at the Fe/MgO interface. For Cr/Fe (5.9 Å)/Cr (0.7 Å)/MgO with an effective PMA of 0.8 MJ/m3, a maximum value of the voltage-controlled magnetic anisotropy (VCMA) effect of 370 fJ/Vm was demonstrated.

cond-mat.mtrl-sci↗
arXiv2016

Magnetoelectric properties of 500 nm Cr2O3 films

The linear magnetoelectric effect was measured in 500 nm Cr2O3 films grown by rf sputtering on Al2O3 substrates between top and bottom thin film Pt electrodes. Magnetoelectric susceptibility was measured directly by applying an AC electric field and measuring the induced AC magnetic moment using superconducting quantum interference device magnetometry. A linear dependence of the induced AC magnetic moment on the AC electric field amplitude was found. The temperature dependence of the magnetoelectric susceptibility agreed qualitatively and quantitatively with prior measurements of bulk single crystals, but the characteristic temperatures of the film were lower than those of single crystals. It was also possible to reverse the sign of the magnetoelectric susceptibility by reversing the sign of the magnetic field applied during cooling through the Néel temperature. A competition between total magnetoelectric and Zeeman energies is proposed to explain the difference between film and bulk Cr2O3 regarding the cooling field dependence of the magnetoelectric effect.

cond-mat.mtrl-sci↗
arXiv2013

RF amplification property of the MgO-based magnetic tunnel junction using field-induced ferromagnetic resonance

The radio-frequency (RF) voltage amplification property of a tunnel magnetoresistance device driven by an RF external-magnetic-field-induced ferromagnetic resonance was studied. The proposed device consists of a magnetic tunnel junction (MTJ) and an electrically isolated coplanar waveguide. The input RF voltage applied to the waveguide can excite the resonant dynamics in the free layer magnetization, leading to the generation of an output RF voltage under a DC bias current. The dependences of the RF voltage gain on the static external magnetic field strength and angle were systematically investigated. The design principles for the enhancement of the gain factor are also discussed.

cond-mat.mtrl-sci↗
arXiv2013

Study of Exclusive B->X_u l nu Decays and Extraction of |V_{ub}| using Full Reconstruction Tagging at the Belle Experiment

We report the results of a study of the exclusive semileptonic decays B->pi0lnu, B->pi+lnu, B->rho0lnu, B->rho+lnu and B->omegalnu, where l represents an electron or a muon. The events are tagged by fully reconstructing a second B meson in the event in a hadronic decay mode. The measured branching fractions are Br(B->pi0lnu) = (0.80 +- 0.08 +- 0.04)x10^-4, Br(B->pi+lnu) = (1.49 +- 0.09 +- 0.07)x10^-4, Br(B->rho0lnu) = (1.83 +- 0.10 +- 0.10)x10^-4, Br(B->rho+lnu) = (3.22 +- 0.27 +- 0.24)x10^-4, and Br(B->omegalnu) =(1.07 +- 0.16 +- 0.07)x10^-4, where the first error is statistical and the second one is systematic. The obtained branching fractions are inclusive of soft photon emission. We also determine the branching fractions as a function of the 4-momentum transfer squared to the leptonic system q^2=(p_l+p_nu)^2, where p_l and p_nu are the lepton and neutrino 4-momenta, respectively. Using the pion modes, a recent LCSR calculation, lattice QCD results and a model-independent description of the hadronic form factor, a value of the CKM matrix element |V_{ub}| = (3.52 +- 0.29)x10^-3 is extracted. For the first time, a charmless state with invariant mass greater than 1 GeV/c^2, which might be dominated by the decay B->f2lnu, is observed. These results are obtained from a 711 1/fb data sample that contains 772 millions BB pairs, collected near the Upsilon(4S) resonance with the Belle detector at the KEKB asymmetric-energy e^+ e^- collider.

hep-ex↗
arXiv2011

Search for CP Violation in D Meson Decays to phi pi+

We search for CP violation in Cabibbo-suppressed charged D meson decays by measuring the difference between the CP violating asymmetries for the Cabibbo-suppressed decays D+ -> K+K-pi+ and the Cabibbo-favored decays Ds -> K+K-pi+ in the K+K- mass region of the phi resonance. Using 955/fb of data collected with the Belle detector we obtain A_CP(D+ -> phi pi+) = (+0.51 +- 0.28 +- 0.05)%. The measurement improves the sensitivity of previous searches by more than a factor of five. We find no evidence for direct CP violation.

hep-ex↗
arXiv2011

Measurement of the decay $B^0\toπ^-\ell^+ν$ and determination of $|V_{ub}|$

We present a measurement of the charmless semileptonic decay $B^0\toπ^-\ell^+ν$ using a data sample containing 657$\times 10^6$ $B\bar{B}$ events collected with the Belle detector at the KEKB asymmetric-energy $e^+e^-$ collider operating near the $Υ(4S)$ resonance. We determine the total branching fraction of the decay, $\mathcal{B}(B^0\toπ^-\ell^+ν)=(1.49\pm 0.04{(\mathrm{stat})}\pm 0.07{(\mathrm{syst})})\times 10^{-4}$. We also report a new precise measurement of the differential decay rate, and extract the Cabibbo-Kobayashi-Maskawa matrix element $|V_{ub}|$ using model-independent and -dependent approaches. From a simultaneous fit to the measured differential decay rate and lattice QCD results, we obtain $|V_{ub}|=(3.43\pm 0.33)\times 10^{-3}$, where the error includes both statistical and systematic uncertainties.

hep-ex↗
arXiv2010

Measurement of CP violating asymmetries in B^0 -> K^+K^- K^0_S decays with a time-dependent Dalitz approach

We report a measurement of $CP$ violating asymmetries in $B^0(\overline{B}^0) \to K^+ K^- K^0_S$ decays with a time-dependent Dalitz approach. This analysis is based on a data sample of $657\times 10^6$ $B\overline{B}$ pairs accumulated at the $Υ(4S)$ resonance with the Belle detector at the KEKB asymmetric-energy $e^+e^-$ collider. As the result of an unbinned maximum likelihood fit to the selected candidates, the mixing-induced and direct $CP$ violation parameters, $ϕ^{\rm eff}_1$ and ${\cal A}_{CP}$ are obtained for $B^0 \to ϕ(1020) K^0_S$, $B^0 \to f_0(980) K^0_S$ and other $B^0 \to K^+ K^- K^0_S$ decays. We find four solutions that describe the data. There are \{eqnarray*} ϕ_1^{\rm eff}(B^0\to ϕ(1020) K^0_S) & = & (32.2 \pm 9.0 \pm 2.6 \pm 1.4)^{\circ}; ϕ_1^{\rm eff}(B^0\to ϕ(1020) K^0_S) & = & (26.2 \pm 8.8 \pm 2.7 \pm 1.2)^{\circ};\\ ϕ_1^{\rm eff}(B^0\to ϕ(1020) K^0_S) & = & (27.3 \pm 8.6 \pm 2.8 \pm 1.3)^{\circ}\; {\rm and}\\ ϕ_1^{\rm eff}(B^0\to ϕ(1020) K^0_S) & = & (24.3 \pm 8.0 \pm 2.9 \pm 5.2)^{\circ}.{eqnarray*}\ The values for the $CP$ violating phase in $B^0\to ϕ(1020) K^0_S$ are similar but other properties of the Dalitz plot are quite different for the four solutions. These four solutions have consistent $ϕ^{\rm eff}_1$ values for all three $B$ meson decay channels and none of them deviates significantly from the values measured in $B \to (c\bar{c}) K^0$ decays with the currently available statistics. In addition, we find no significant direct $CP$ violation.

hep-ex↗
arXiv2004

An Effective Reduction of Critical Current for Current-Induced Magnetization Switching by a Ru Layer Insertion in an Exchange-Biased Spin-Valve

Recently it has been predicted that a spin-polarized electrical current perpendicular-to-plane (CPP) directly flowing through a magnetic element can induce magnetization switching through spin-momentum transfer. In this letter, the first observation of current-induced magnetization switching (CIMS) in exchange-biased spin-valves (ESPVs) at room temperature is reported. The ESPVs show the CIMS behavior under a sweeping dc current with a very high critical current density. It is demonstrated that a thin Ruthenium (Ru) layer inserted between a free layer and a top electrode effectively reduces the critical current densities for the CIMS. An "inverse" CIMS behavior is also observed when the thickness of the free layer increases.

cond-mat.mtrl-sci↗