arXiv subjects

T. O. Wehling

Publications and source records attributed to T. O. Wehling.

At least 37 records · Page 2Linked to original sources

arXiv2015

Variational exact diagonalization method for Anderson impurity models

We describe a variational approach to solving Anderson impurity models by means of exact diagonalization. Optimized parameters of a discretized auxiliary model are obtained on the basis of the Peierls-Feynman-Bogoliubov principle. Thereby, the variational approach resolves ambiguities related with the bath discretization, which is generally necessary to make Anderson impurity models tractable by exact diagonalization. The choice of variational degrees of freedom made here allows systematic improvements of total energies over mean field decouplings like Hartree-Fock. Furthermore, our approach allows us to embed arbitrary bath discretization schemes in total energy calculations and to systematically optimize and improve on traditional routes to the discretization problem such as fitting of hybridization functions on Matsubara frequencies. Benchmarks in terms of a single orbital Anderson model demonstrate that the variational exact diagonalization method accurately reproduces free energies as well as several single- and two-particle observables obtained from an exact solution. Finally, we demonstrate the applicability of the variational exact diagonalization approach to realistic five orbital problems with the example system of Co impurities in bulk Cu and compare to continuous-time Monte Carlo calculations. The accuracy of established bath discretization schemes is assessed in the framework of the variational approach introduced here.

cond-mat.str-el↗

arXiv2015

Wannier Function Approach to Realistic Coulomb Interactions in Layered Materials and Heterostructures

We introduce an approach to derive realistic Coulomb interaction terms in free standing layered materials and vertical heterostructures from ab-initio modelling of the corresponding bulk materials. To this end, we establish a combination of calculations within the framework of the constrained random phase approximation, Wannier function representation of Coulomb matrix elements within some low energy Hilbert space and continuum medium electrostatics, which we call Wannier function continuum electrostatics (WFCE). For monolayer and bilayer graphene we reproduce full ab-initio calculations of the Coulomb matrix elements within an accuracy of $0.2$eV or better. We show that realistic Coulomb interactions in bilayer graphene can be manipulated on the eV scale by different dielectric and metallic environments. A comparison to electronic phase diagrams derived in [M. M. Scherer et al., Phys. Rev. B 85, 235408 (2012)] suggests that the electronic ground state of bilayer graphene is a layered antiferromagnet and remains surprisingly unaffected by these strong changes in the Coulomb interaction.

cond-mat.mtrl-sci↗

arXiv2014

Phase Diagram of Electron Doped Dichalcogenides

Using first principle calculations, we examine the sequence of phases in electron doped dichalcogenides, such as recently realized in field-gated MoS$_2$. Upon increasing the electron doping level, we observe a succession of semiconducting, metallic, superconducting and charge density wave regimes, i.e. in different order compared to the phase diagram of (semi-)metallic dichalcogenides such as TiSe$_2$. Both instabilities trace back to a softening of phonons which couple the electron populated conduction band minima. The superconducting dome, calculated using Eliashberg theory, is found to fit the experimentally observed phase diagram, obtained from resistivity measurements. The charge density wave phase at higher electron doping concentrations as predicted from instabilities in the phonon modes is further corroborated by detecting the accompanying lattice deformation in density functional based supercell relaxations. Upon charge density wave formation, doped MoS$_2$ remains metallic but undergoes a Lifschitz transition, where the number of Fermi pockets is reduced.

cond-mat.mtrl-sci↗

arXiv2014

Probing of valley polarization in graphene via optical second-harmonic generation

Valley polarization in graphene breaks inversion symmetry and therefore leads to second-harmonic generation. We present a complete theory of this effect within a single-particle approximation. It is shown that this may be a sensitive tool to measure the valley polarization created, e.g., by polarized light and, thus, can be used for a development of ultrafast valleytronics in graphene.

cond-mat.mes-hall↗

arXiv2014

Dirac materials

A wide range of materials, like d-wave superconductors, graphene, and topological insulators, share a fundamental similarity: their low-energy fermionic excitations behave as massless Dirac particles rather than fermions obeying the usual Schrodinger Hamiltonian. This emergent behavior of Dirac fermions in condensed matter systems defines the unifying framework for a class of materials we call "Dirac materials''. In order to establish this class of materials, we illustrate how Dirac fermions emerge in multiple entirely different condensed matter systems and we discuss how Dirac fermions have been identified experimentally using electron spectroscopy techniques (angle-resolved photoemission spectroscopy and scanning tunneling spectroscopy). As a consequence of their common low-energy excitations, this diverse set of materials shares a significant number of universal properties in the low-energy (infrared) limit. We review these common properties including nodal points in the excitation spectrum, density of states, specific heat, transport, thermodynamic properties, impurity resonances, and magnetic field responses, as well as discuss many-body interaction effects. We further review how the emergence of Dirac excitations is controlled by specific symmetries of the material, such as time-reversal, gauge, and spin-orbit symmetries, and how by breaking these symmetries a finite Dirac mass is generated. We give examples of how the interaction of Dirac fermions with their distinct real material background leads to rich novel physics with common fingerprints such as the suppression of back scattering and impurity-induced resonant states.

cond-mat.mtrl-sci↗

arXiv2013

Doping Mechanisms in Graphene-MoS2 Hybrids

We present a joint theoretical and experimental investigation of charge doping and electronic potential landscapes in hybrid structures composed of graphene and semiconducting single layer MoS2. From first-principles simulations we find electron doping of graphene due to the presence of rhenium impurities in MoS2. Furthermore, we show that MoS2 edges give rise to charge reordering and a potential shift in graphene, which can be controlled through external gate voltages. The interplay of edge and impurity effects allows the use of the graphene-MoS2 hybrid as a photodetector. Spatially resolved photocurrent signals can be used to resolve potential gradients and local doping levels in the sample.

cond-mat.mes-hall↗

arXiv2013

Ferromagnetic two-dimensional crystals: Single layers of K2CuF4

The successful isolation of graphene ten years ago has evoked a rapidly growing scientific interest in the nature of two-dimensional (2D) crystals. A number of different 2D crystals has been produced since then, with properties ranging from superconductivity to insulating behavior. Here, we predict the possibility for realizing ferromagnetic 2D crystals by exfoliating atomically thin films of K2CuF4. From a first-principles theoretical analysis, we find that single layers of K2CuF4 form exactly 2D Kosterlitz-Thouless systems. The 2D crystal can form a free-standing membrane, and exhibits an experimentally accessible transition temperature and robust magnetic moments of 1 Bohr magneton per formula unit. 2D K2CuF4 unites ferromagnetic and insulating properties and is a demonstration of principles for nanoelectronics such as novel 2D-based heterostructures.

cond-mat.mes-hall↗

arXiv2013

Optimal Hubbard models for materials with nonlocal Coulomb interactions: graphene, silicene and benzene

To understand how nonlocal Coulomb interactions affect the phase diagram of correlated electron materials, we report on a method to approximate a correlated lattice model with nonlocal interactions by an effective Hubbard model with on-site interactions U* only. The effective model is defined by the Peierls-Feynman-Bogoliubov variational principle. We find that the local part of the interaction U is reduced according to U*=U-V', where V' is a weighted average of nonlocal interactions. For graphene, silicene and benzene we show that the nonlocal Coulomb interaction can decrease the effective local interaction by more than a factor of 2 in a wide doping range.

cond-mat.str-el↗

arXiv2013

Magnetic Impurity Affected by Spin-Orbit Coupling: Behavior near a Topological Phase Transition

We investigate the effect of spin-orbit coupling on the behavior of magnetic impurity at the edge of a zigzag graphene ribbon by means of quantum Monte Carlo simulations. A peculiar interplay of Kane-Mele type spin-orbit and impurity-host coupling is found to affect local properties such as the impurity magnetic moment and spectral densities. The special helical nature of the topological insulator on the edge is found to affect nonlocal quantities, such as the two-particle and spin-spin correlation functions linking electrons on the impurity with those in the conduction band.

cond-mat.str-el↗

arXiv2013

Adatoms and clusters of 3d transition metals on graphene: Electronic and magnetic configurations

We investigate the electronic and magnetic properties of single Fe, Co, and Ni atoms and clusters on monolayer graphene (MLG) on SiC(0001) by means of scanning tunneling microscopy (STM), x-ray absorption spectroscopy, x-ray magnetic circular dichroism (XMCD), and ab initio calculations. STM reveals different adsorption sites for Ni and Co adatoms. XMCD proves Fe and Co adatoms to be paramagnetic and to exhibit an out-of-plane easy axis in agreement with theory. In contrast, we experimentally find a nonmagnetic ground state for Ni monomers while an increasing cluster size leads to sizeable magnetic moments. These observations are well reproduced by our calculations and reveal the importance of hybridization effects and intra-atomic charge transfer for the properties of adatoms and clusters on MLG.

cond-mat.mes-hall↗

arXiv2012

Excitation spectra of transition metal atoms on the Ag (100) surface controlled by Hund's exchange

We report photoemission experiments revealing the valence electron spectral function of Mn, Fe, Co and Ni atoms on the Ag(100) surface. The series of spectra shows splittings of higher energy features which decrease with the filling of the 3d shell and a highly non-monotonous evolution of spectral weight near the Fermi edge. First principles calculations demonstrate that two manifestations of Hund's exchange $J$ are responsible for this evolution. First, there is a monotonous reduction of the effective exchange splittings with increasing filling of the 3d shell. Second, the amount of charge fluctuations and, thus, the weight of quasiparticle peaks at the Fermi level varies non-monotonously through this 3d series due to a distinct occupancy dependence of effective charging energies $U_{\rm eff}$.

cond-mat.str-el↗

arXiv2012

Controllable magnetic doping of the surface state of a topological insulator

A combined experimental and theoretical study of doping individual Fe atoms into Bi2Se3 is presented. It is shown through a scanning tunneling microscopy study that single Fe atoms initially located at hollow sites on top of the surface (adatoms) can be incorporated into subsurface layers by thermally-activated diffusion. Angle-resolved photoemission spectroscopy in combination with ab-initio calculations suggest that the doping behavior changes from electron donation for the Fe adatom to neutral or electron acceptance for Fe incorporated into substitutional Bi sites. According to first principles calculations within density functional theory, these Fe substitutional impurities retain a large magnetic moment thus presenting an alternative scheme for magnetically doping the topological surface state. For both types of Fe doping, we see no indication of a gap at the Dirac point.

cond-mat.mtrl-sci↗

arXiv2012

Enhanced Screening in Chemically Functionalized Graphene

Resonant scatterers such as hydrogen adatoms can strongly enhance the low energy density of states in graphene. Here, we study the impact of these impurities on the electronic screening. We find a two-faced behavior: Kubo formula calculations reveal an increased dielectric function $\varepsilon$ upon creation of midgap states but no metallic divergence of the static $\varepsilon$ at small momentum transfer $q\to 0$. This bad metal behavior manifests also in the dynamic polarization function and can be directly measured by means of electron energy loss spectroscopy. A new length scale $l_c$ beyond which screening is suppressed emerges, which we identify with the Anderson localization length.

cond-mat.mes-hall↗

arXiv2012

Local Gating of an Ir(111) Surface Resonance by Graphene Islands

The influence of graphene islands on the electronic structure of the Ir(111) surface is investigated. Scanning tunneling spectroscopy (STS) indicates the presence of a two-dimensional electron gas with a binding energy of -160meV and an effective mass of -0.18m_e underneath single-layer graphene on the Ir(111) surface. Density functional calculations reveal that the STS features are predominantly due to a holelike surface resonance of the Ir(111) substrate. Nanometer-sized graphene islands act as local gates, which shift and confine the surface resonance.

cond-mat.mes-hall↗

arXiv2011

In-plane magnetic anisotropy of Fe atoms on Bi$_2$Se$_3$(111)

The robustness of the gapless topological surface state hosted by a 3D topological insulator against perturbations of magnetic origin has been the focus of recent investigations. We present a comprehensive study of the magnetic properties of Fe impurities on a prototypical 3D topological insulator Bi$_2$Se$_3$ using local low temperature scanning tunneling microscopy and integral x-ray magnetic circular dichroism techniques. Single Fe adatoms on the Bi$_2$Se$_3$ surface, in the coverage range $\approx 1%$ are heavily relaxed into the surface and exhibit a magnetic easy axis within the surface-plane, contrary to what was assumed in recent investigations on the opening of a gap. Using \textit{ab initio} approaches, we demonstrate that an in-plane easy axis arises from the combination of the crystal field and dynamic hybridization effects.

cond-mat.mes-hall↗

arXiv2011

Multi-scale magnetic study on Ni(111) and graphene on Ni(111)

We have investigated the magnetism of the bare and graphene-covered (111) surface of a Ni single crystal employing three different magnetic imaging techniques and ab initio calculations, covering length scales from the nanometer regime up to several millimeters. With low temperature spinpolarized scanning tunneling microscopy (SP-STM) we find domain walls with widths of 60 - 90 nm, which can be moved by small perpendicular magnetic fields. Spin contrast is also achieved on the graphene-covered surface, which means that the electron density in the vacuum above graphene is substantially spin-polarized. In accordance with our ab initio calculations we find an enhanced atomic corrugation with respect to the bare surface, due to the presence of the carbon pz orbitals and as a result of the quenching of Ni surface states. The latter also leads to an inversion of spinpolarization with respect to the pristine surface. Room temperature Kerr microscopy shows a stripe like domain pattern with stripe widths of 3 - 6 μm. Applying in-plane-fields, domain walls start to move at about 13 mT and a single domain state is achieved at 140 mT. Via scanning electron microscopy with polarization analysis (SEMPA) a second type of modulation within the stripes is found and identified as 330 nm wide V-lines. Qualitatively, the observed surface domain pattern originates from bulk domains and their quasi-domain branching is driven by stray field reduction.

cond-mat.mes-hall↗

arXiv2011

Adhesion and electronic structure of graphene on hexagonal boron nitride substrates

We investigate the adsorption of graphene sheets on h-BN substrates by means of first-principles calculations in the framework of adiabatic connection fluctuation-dissipation theory in the random phase approximation. We obtain adhesion energies for different crystallographic stacking configurations and show that the interlayer bonding is due to long-range van der Waals forces. The interplay of elastic and adhesion energies is shown to lead to stacking disorder and moiré structures. Band structure calculations reveal substrate induced mass terms in graphene which change their sign with the stacking configuration. The dispersion, absolute band gaps and the real space shape of the low energy electronic states in the moiré structures are discussed. We find that the absolute band gaps in the moiré structures are at least an order of magnitude smaller than the maximum local values of the mass term. Our results are in agreement with recent STM experiments.

cond-mat.mes-hall↗

arXiv2011

Transition metal ad-atoms on graphene: Influence of local Coulomb interactions on chemical bonding and magnetic moments

We address the interaction of graphene with 3d transition metal adatoms and the formation of localized magnetic moments by means of first-principles calculations. By comparing calculations within the generalized gradient approximation (GGA) to GGA+U we find that the electronic configuration and the adsorption geometries can be very sensitive to effects of local Coulomb interactions U in the transition metal d-orbitals. We find high-spin configurations being favorable for Cr and Mn adatoms independent of the functional. For Fe, Co and Ni different electronic configurations are realized depending on the value of the local Coulomb interaction strength U. Chemical control over the spin of the adatoms by hydrogenation is demonstrated: NiH and CoH adsorbed to graphene exhibit spin S=1/2 and S=1, respectively.

cond-mat.str-el↗