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T. Patrick Xiao

Publications and source records attributed to T. Patrick Xiao.

15 recordsLinked to original sources

Scalable extensions to given-data Sobol' index estimators

Given-data methods for variance-based sensitivity analysis have significantly advanced the feasibility of Sobol' index computation for computationally expensive models and models with many inputs. However, the limitations of existing methods still preclude their application to models with an extremely large number of inputs. In this work, we present practical and theoretical extensions to the existing given-data Sobol' index method, which allow variance-based sensitivity analysis to be efficiently performed on large models such as neural networks, which have $>10^4$ inputs. For models of this size, holding all input-output evaluations simultaneously in memory---as required by existing methods---can quickly become impractical. Our extensions include a general definition of the given-data Sobol' index estimator with arbitrary partition, a streaming algorithm to process input-output samples in batches, and an asymptotic analysis of the new estimator that motivates a practical screening heuristic for small indices. We show that the equiprobable partition employed in existing given-data methods can introduce significant bias into Sobol' index estimates even at large sample sizes and provide numerical analyses that demonstrate why this can occur. We also show that the streaming algorithm can achieve comparable accuracy and runtime while substantially reducing memory requirements, enabling sensitivity analysis of models with much larger input dimension. We demonstrate our novel developments on two application problems in neural network modeling.

stat.ML

Analog fast Fourier transforms for scalable and efficient signal processing

Edge devices are being deployed at increasing volumes to sense and act on information from the physical world. The discrete Fourier transform (DFT) is often necessary to make this sensed data suitable for further processing -- such as by artificial intelligence (AI) algorithms -- and for transmission over communication networks. Analog in-memory computing has been shown to be a fast, energy-efficient, and scalable solution for processing edge AI workloads, but not for Fourier transforms. This is because of the existence of the fast Fourier transform (FFT) algorithm, which enormously reduces the complexity of the DFT but has so far belonged only to digital processors. Here, we show that the FFT can be mapped to analog in-memory computing systems, enabling them to efficiently scale to arbitrarily large Fourier transforms without requiring large sizes or large numbers of non-volatile memory arrays. We experimentally demonstrate analog FFTs on 1D audio and 2D image signals, performing analog computations on up to 524K charge-trapping memory devices simultaneously, where each device has precisely tunable, low-conductance analog states. The scalability of both the new analog FFT approach and the charge-trapping memory device is leveraged to compute a 65,536-point analog DFT, a scale that is otherwise inaccessible by analog systems and which is $>$500$\times$ larger than any previous analog DFT demonstration. Analog FFT cores can provide higher energy efficiency and performance per area than specialized digital FFT processors at all FFT sizes, while also functioning as efficient matrix multiplication engines for AI workloads.

cs.ET

A self-heating electrochemical cell with nine decades of programmable linear resistance

A programmable linear resistor with a compact footprint would have profound implications for microelectronics, enabling efficient in-sensor analog signal processing and in-memory computing. Non-volatile memory offers a potential solution but suffers from limitations due to the programming mechanisms that confine switching to nanoscale constrictions or field-sensitive semiconductor junctions, leading to non-linear current-voltage relationships and errors. Here, we introduce a tunable resistor that is programmed into non-volatile, high-precision resistance states spanning nine orders of magnitude, with linear current-voltage characteristics across the entire range -- significantly improving the performance and widening the application space of resistive memory. A key advance is an electrothermal gate that simultaneously spreads heat and electrochemical reactions during programming to enable large, bulk composition modulation. The volumetric modulation can host thousands of linear resistance states with 100x lower conductance errors than other memory. This enables direct processing of analog signals with high fidelity, and we demonstrate variable-gain amplification, division, and multiplication. Integration with CMOS is used to show resilience to electrical and thermal disturb in arrays and to demonstrate retention of analog levels at <1% average loss for more than 2 months across 100 devices. Simulations indicate matrix multiplication efficiency could approach >1,000 TOPS/W.

cs.ET

Incorruptible Neural Networks: Training Models that can Generalize to Large Internal Perturbations

Flat regions of the neural network loss landscape have long been hypothesized to correlate with better generalization properties. A closely related but distinct problem is training models that are robust to internal perturbations to their weights, which may be an important need for future low-power hardware platforms. In this paper, we explore the usage of two methods, sharpness-aware minimization (SAM) and random-weight perturbation (RWP), to find minima robust to a variety of random corruptions to weights. We consider the problem from two angles: generalization (how do we reduce the noise-robust generalization gap) and optimization (how do we maximize performance from optimizers when subject to strong perturbations). First, we establish, both theoretically and empirically, that an over-regularized RWP training objective is optimal for noise-robust generalization. For small-magnitude noise, we find that SAM's adversarial objective further improves performance over any RWP configuration, but performs poorly for large-magnitude noise. We link the cause of this to a vanishing-gradient effect, caused by unevenness in the loss landscape, affecting both SAM and RWP. Lastly, we demonstrate that dynamically adjusting the perturbation strength to match the evolution of the loss landscape improves optimizing for these perturbed objectives.

cs.LG

Analog Bayesian neural networks are insensitive to the shape of the weight distribution

Recent work has demonstrated that Bayesian neural networks (BNN's) trained with mean field variational inference (MFVI) can be implemented in analog hardware, promising orders of magnitude energy savings compared to the standard digital implementations. However, while Gaussians are typically used as the variational distribution in MFVI, it is difficult to precisely control the shape of the noise distributions produced by sampling analog devices. This paper introduces a method for MFVI training using real device noise as the variational distribution. Furthermore, we demonstrate empirically that the predictive distributions from BNN's with the same weight means and variances converge to the same distribution, regardless of the shape of the variational distribution. This result suggests that analog device designers do not need to consider the shape of the device noise distribution when hardware-implementing BNNs performing MFVI.

cs.LG

An out-of-distribution discriminator based on Bayesian neural network epistemic uncertainty

Neural networks have revolutionized the field of machine learning with increased predictive capability. In addition to improving the predictions of neural networks, there is a simultaneous demand for reliable uncertainty quantification on estimates made by machine learning methods such as neural networks. Bayesian neural networks (BNNs) are an important type of neural network with built-in capability for quantifying uncertainty. This paper discusses aleatoric and epistemic uncertainty in BNNs and how they can be calculated. With an example dataset of images where the goal is to identify the amplitude of an event in the image, it is shown that epistemic uncertainty tends to be lower in images which are well-represented in the training dataset and tends to be high in images which are not well-represented. An algorithm for out-of-distribution (OoD) detection with BNN epistemic uncertainty is introduced along with various experiments demonstrating factors influencing the OoD detection capability in a BNN. The OoD detection capability with epistemic uncertainty is shown to be comparable to the OoD detection in the discriminator network of a generative adversarial network (GAN) with comparable network architecture.

cs.LG

Parallel Matrix Multiplication Using Voltage Controlled Magnetic Anisotropy Domain Wall Logic

The domain wall-magnetic tunnel junction (DW-MTJ) is a versatile device that can simultaneously store data and perform computations. These three-terminal devices are promising for digital logic due to their nonvolatility, low-energy operation, and radiation hardness. Here, we augment the DW-MTJ logic gate with voltage controlled magnetic anisotropy (VCMA) to improve the reliability of logical concatenation in the presence of realistic process variations. VCMA creates potential wells that allow for reliable and repeatable localization of domain walls. The DW-MTJ logic gate supports different fanouts, allowing for multiple inputs and outputs for a single device without affecting area. We simulate a systolic array of DW-MTJ Multiply-Accumulate (MAC) units with 4-bit and 8-bit precision, which uses the nonvolatility of DW-MTJ logic gates to enable fine-grained pipelining and high parallelism. The DW-MTJ systolic array provides comparable throughput and efficiency to state-of-the-art CMOS systolic arrays while being radiation-hard. These results improve the feasibility of using domain wall-based processors, especially for extreme-environment applications such as space.

cond-mat.mes-hall

Metaplastic and Energy-Efficient Biocompatible Graphene Artificial Synaptic Transistors for Enhanced Accuracy Neuromorphic Computing

CMOS-based computing systems that employ the von Neumann architecture are relatively limited when it comes to parallel data storage and processing. In contrast, the human brain is a living computational signal processing unit that operates with extreme parallelism and energy efficiency. Although numerous neuromorphic electronic devices have emerged in the last decade, most of them are rigid or contain materials that are toxic to biological systems. In this work, we report on biocompatible bilayer graphene-based artificial synaptic transistors (BLAST) capable of mimicking synaptic behavior. The BLAST devices leverage a dry ion-selective membrane, enabling long-term potentiation, with ~50 aJ/m^2 switching energy efficiency, at least an order of magnitude lower than previous reports on two-dimensional material-based artificial synapses. The devices show unique metaplasticity, a useful feature for generalizable deep neural networks, and we demonstrate that metaplastic BLASTs outperform ideal linear synapses in classic image classification tasks. With switching energy well below the 1 fJ energy estimated per biological synapse, the proposed devices are powerful candidates for bio-interfaced online learning, bridging the gap between artificial and biological neural networks.

cond-mat.mes-hall

Shape-Dependent Multi-Weight Magnetic Artificial Synapses for Neuromorphic Computing

In neuromorphic computing, artificial synapses provide a multi-weight conductance state that is set based on inputs from neurons, analogous to the brain. Additional properties of the synapse beyond multiple weights can be needed, and can depend on the application, requiring the need for generating different synapse behaviors from the same materials. Here, we measure artificial synapses based on magnetic materials that use a magnetic tunnel junction and a magnetic domain wall. By fabricating lithographic notches in a domain wall track underneath a single magnetic tunnel junction, we achieve 4-5 stable resistance states that can be repeatably controlled electrically using spin orbit torque. We analyze the effect of geometry on the synapse behavior, showing that a trapezoidal device has asymmetric weight updates with high controllability, while a straight device has higher stochasticity, but with stable resistance levels. The device data is input into neuromorphic computing simulators to show the usefulness of application-specific synaptic functions. Implementing an artificial neural network applied on streamed Fashion-MNIST data, we show that the trapezoidal magnetic synapse can be used as a metaplastic function for efficient online learning. Implementing a convolutional neural network for CIFAR-100 image recognition, we show that the straight magnetic synapse achieves near-ideal inference accuracy, due to the stability of its resistance levels. This work shows multi-weight magnetic synapses are a feasible technology for neuromorphic computing and provides design guidelines for emerging artificial synapse technologies.

cond-mat.mes-hall

On the Accuracy of Analog Neural Network Inference Accelerators

Specialized accelerators have recently garnered attention as a method to reduce the power consumption of neural network inference. A promising category of accelerators utilizes nonvolatile memory arrays to both store weights and perform $\textit{in situ}$ analog computation inside the array. While prior work has explored the design space of analog accelerators to optimize performance and energy efficiency, there is seldom a rigorous evaluation of the accuracy of these accelerators. This work shows how architectural design decisions, particularly in mapping neural network parameters to analog memory cells, influence inference accuracy. When evaluated using ResNet50 on ImageNet, the resilience of the system to analog non-idealities - cell programming errors, analog-to-digital converter resolution, and array parasitic resistances - all improve when analog quantities in the hardware are made proportional to the weights in the network. Moreover, contrary to the assumptions of prior work, nearly equivalent resilience to cell imprecision can be achieved by fully storing weights as analog quantities, rather than spreading weight bits across multiple devices, often referred to as bit slicing. By exploiting proportionality, analog system designers have the freedom to match the precision of the hardware to the needs of the algorithm, rather than attempting to guarantee the same level of precision in the intermediate results as an equivalent digital accelerator. This ultimately results in an analog accelerator that is more accurate, more robust to analog errors, and more energy-efficient.

cs.AR

Domain Wall-Magnetic Tunnel Junction Spin Orbit Torque Devices and Circuits for In-Memory Computing

There are pressing problems with traditional computing, especially for accomplishing data-intensive and real-time tasks, that motivate the development of in-memory computing devices to both store information and perform computation. Magnetic tunnel junction (MTJ) memory elements can be used for computation by manipulating a domain wall (DW), a transition region between magnetic domains. But, these devices have suffered from challenges: spin transfer torque (STT) switching of a DW requires high current, and the multiple etch steps needed to create an MTJ pillar on top of a DW track has led to reduced tunnel magnetoresistance (TMR). These issues have limited experimental study of devices and circuits. Here, we study prototypes of three-terminal domain wall-magnetic tunnel junction (DW-MTJ) in-memory computing devices that can address data processing bottlenecks and resolve these challenges by using perpendicular magnetic anisotropy (PMA), spin-orbit torque (SOT) switching, and an optimized lithography process to produce average device tunnel magnetoresistance TMR = 164%, resistance-area product RA = 31 Ω-μm^2, close to the RA of the unpatterned film, and lower switching current density compared to using spin transfer torque. A two-device circuit shows bit propagation between devices. Device initialization variation in switching voltage is shown to be curtailed to 7% by controlling the DW initial position, which we show corresponds to 96% accuracy in a DW-MTJ full adder simulation. These results make strides in using MTJs and DWs for in-memory and neuromorphic computing applications.

cond-mat.mes-hall

Device-aware inference operations in SONOS nonvolatile memory arrays

Non-volatile memory arrays can deploy pre-trained neural network models for edge inference. However, these systems are affected by device-level noise and retention issues. Here, we examine damage caused by these effects, introduce a mitigation strategy, and demonstrate its use in fabricated array of SONOS (Silicon-Oxide-Nitride-Oxide-Silicon) devices. On MNIST, fashion-MNIST, and CIFAR-10 tasks, our approach increases resilience to synaptic noise and drift. We also show strong performance can be realized with ADCs of 5-8 bits precision.

cs.NE

Plasticity-Enhanced Domain-Wall MTJ Neural Networks for Energy-Efficient Online Learning

Machine learning implements backpropagation via abundant training samples. We demonstrate a multi-stage learning system realized by a promising non-volatile memory device, the domain-wall magnetic tunnel junction (DW-MTJ). The system consists of unsupervised (clustering) as well as supervised sub-systems, and generalizes quickly (with few samples). We demonstrate interactions between physical properties of this device and optimal implementation of neuroscience-inspired plasticity learning rules, and highlight performance on a suite of tasks. Our energy analysis confirms the value of the approach, as the learning budget stays below 20 $μJ$ even for large tasks used typically in machine learning.

cs.NE

Evaluating complexity and resilience trade-offs in emerging memory inference machines

Neuromorphic-style inference only works well if limited hardware resources are maximized properly, e.g. accuracy continues to scale with parameters and complexity in the face of potential disturbance. In this work, we use realistic crossbar simulations to highlight that compact implementations of deep neural networks are unexpectedly susceptible to collapse from multiple system disturbances. Our work proposes a middle path towards high performance and strong resilience utilizing the Mosaics framework, and specifically by re-using synaptic connections in a recurrent neural network implementation that possesses a natural form of noise-immunity.

cs.NE

Ultra-Efficient Thermophotovoltaics Exploiting Spectral Filtering by the Photovoltaic Band-Edge

Thermophotovotaics convert thermal radiation from local heat sources to electricity. A new breakthrough in creating highly efficient thin-film solar cells can potentially enable thermophotovoltaic systems with unprecedented high efficiency. The current 28.8% single-junction solar efficiency record, by Alta Devices, was achieved by recognizing that a good solar cell needs to reflect infrared band-edge radiation at the back surface, to effectively recycle infrared luminescent photons. The effort to reflect band-edge luminescence in solar cells has serendipitously created the technology to reflect all infrared wavelengths, which can revolutionize thermophotovoltaics. We have never before had such high back reflectivity for sub-bandgap radiation, permitting step-function spectral control for the first time. Thus, contemporary efficiency advances in solar photovoltaic cells create the possibility of realizing a $>50\%$ efficient thermophotovoltaic system.

physics.optics