arXiv subjects

T. S. Jespersen

Publications and source records attributed to T. S. Jespersen.

18 recordsLinked to original sources

arXiv2018

Coupling of shells in a carbon nanotube quantum dot

We systematically study the coupling of longitudinal modes (shells) in a carbon nanotube quantum dot. Inelastic cotunneling spectroscopy is used to probe the excitation spectrum in parallel, perpendicular and rotating magnetic fields. The data is compared to a theoretical model including coupling between shells, induced by atomically sharp disorder in the nanotube. The calculated excitation spectra show good correspondence with experimental data.

cond-mat.mes-hall↗

arXiv2017

Evolution of Nanowire Transmons and Their Quantum Coherence in Magnetic Field

We present an experimental study of nanowire transmons at zero and applied in-plane magnetic field. With Josephson non-linearities provided by the nanowires, our qubits operate at higher magnetic fields than standard transmons. Nanowire transmons exhibit coherence up to 70 mT, where the induced superconducting gap in the nanowire closes. We demonstrate that on-chip charge noise coupling to the Josephson energy plays a dominant role in the qubit dephasing. This takes the form of strongly-coupled two-level systems switching on 100 ms timescales and a more weakly coupled background producing $1/f$ noise. Several observations, including the field dependence of qubit energy relaxation and dephasing, are not fully understood, inviting further experimental investigation and theory. Using nanowires with a thinner superconducting shell will enable operation of these circuits up to 0.5 T, a regime relevant for topological quantum computation.

quant-ph↗

arXiv2016

Transport signatures of quasiparticle poisoning in a Majorana island

We investigate effects of quasiparticle poisoning in a Majorana island with strong tunnel coupling to normal-metal leads. In addition to the main Coulomb blockade diamonds, "shadow" diamonds appear, shifted by 1e in gate voltage, consistent with transport through an excited (poisoned) state of the island. Comparison to a simple model yields an estimate of parity lifetime for the strongly coupled island (~ 1 μs) and sets a bound for a weakly coupled island (> 10 μs). Fluctuations in the gate-voltage spacing of Coulomb peaks at high field, reflecting Majorana hybridization, are enhanced by the reduced lever arm at strong coupling. In energy units, fluctuations are consistent with previous measurements.

cond-mat.mes-hall↗

arXiv2016

Exponential Protection of Zero Modes in Majorana Islands

Majorana zero modes are quasiparticle excitations in condensed matter systems that have been proposed as building blocks of fault-tolerant quantum computers [1]. They are expected to exhibit non-Abelian particle statistics, in contrast to the usual statistics of fermions and bosons, enabling quantum operations to be performed by braiding isolated modes around one another. Quantum braiding operations are topologically protected insofar as these modes are pinned near zero energy, and the pinning is predicted to be exponential as the modes become spatially separated. Following theoretical proposals, several experiments have identified signatures of Majorana modes in proximitized nanowires and atomic chains, with small mode-splitting potentially explained by hybridization of Majoranas. Here, we use Coulomb-blockade spectroscopy in an InAs nanowire segment with epitaxial aluminum, which forms a proximity-induced superconducting Coulomb island (a Majorana island) that is isolated from normal-metal leads by tunnel barriers, to measure the splitting of near-zero-energy Majorana modes. We observe exponential suppression of energy splitting with increasing wire length. For short devices of a few hundred nanometers, sub-gap state energies oscillate as the magnetic field is varied, as is expected for hybridized Majorana modes. Splitting decreases by a factor of about ten for each half micrometer of increased wire length. For devices longer than about one micrometer, transport in strong magnetic fields occurs through a zero-energy state that is energetically isolated from a continuum, yielding uniformly spaced Coulomb-blockade conductance peaks, consistent with teleportation via Majorana modes. Our results help explain the trivial-to-topological transition in finite systems and to quantify the scaling of topological protection with end-mode separation.

cond-mat.mes-hall↗

arXiv2016

Raman spectroscopy and electrical properties of InAs nanowires with local oxidation enabled by substrate micro-trenches and laser irradiation

The thermal gradient along indium-arsenide nanowires was engineered by a combination of fabricated micro- trenches in the supporting substrate and focused laser irradiation. This allowed local control of thermally activated oxidation reactions of the nanowire on the scale of the diffraction limit. The locality of the oxidation was detected by micro-Raman mapping, and the results were found consistent with numerical simulations of the temperature profile. Applying the technique to nanowires in electrical devices the locally oxidized nanowires remained conducting with a lower conductance as expected for an effectively thinner conducting core.

physics.optics↗

arXiv2015

Extreme mobility enhancement of two-dimensional electron gases at oxide interfaces via charge transfer induced modulation doping

The discovery of two-dimensional electron gases (2DEGs) at the interface between two insulating complex oxides, such as LaAlO3 (LAO) or gamma-Al2O3 (GAO) epitaxially grown on SrTiO3 (STO) 1,2, provides an opportunity for developing all-oxide electronic devices3,4. These 2DEGs at complex oxide interfaces involve many-body interactions and give rise to a rich set of phenomena5, for example, superconductivity6, magnetism7,8, tunable metal-insulator transitions9, and phase separation10. However, large enhancement of the interfacial electron mobility remains a major and long-standing challenge for fundamental as well as applied research of complex oxides11-15. Here, we inserted a single unit cell insulating layer of polar La1-xSrxMnO3 (x=0, 1/8, and 1/3) at the interface between disordered LaAlO3 and crystalline SrTiO3 created at room temperature. We find that the electron mobility of the interfacial 2DEG is enhanced by more than two orders of magnitude. Our in-situ and resonant x-ray spectroscopic in addition to transmission electron microscopy results indicate that the manganite layer undergoes unambiguous electronic reconstruction and leads to modulation doping of such atomically engineered complex oxide heterointerfaces. At low temperatures, the modulation-doped 2DEG exhibits clear Shubnikov-de Haas oscillations and the initial manifestation of the quantum Hall effect, demonstrating an unprecedented high-mobility and low electron density oxide 2DEG system. These findings open new avenues for oxide electronics.

cond-mat.str-el↗

arXiv2015

A Semiconductor Nanowire-Based Superconducting Qubit

We introduce a hybrid qubit based on a semiconductor nanowire with an epitaxially grown superconductor layer. Josephson energy of the transmon-like device ("gatemon") is controlled by an electrostatic gate that depletes carriers in a semiconducting weak link region. Strong coupling to an on-chip microwave cavity and coherent qubit control via gate voltage pulses is demonstrated, yielding reasonably long relaxation times (0.8 μs) and dephasing times (1 μs), exceeding gate operation times by two orders of magnitude, in these first-generation devices. Because qubit control relies on voltages rather than fluxes, dissipation in resistive control lines is reduced, screening reduces crosstalk, and the absence of flux control allows operation in a magnetic field, relevant for topological quantum information.

cond-mat.mes-hall↗

arXiv2015

Hard gap in epitaxial semiconductor-superconductor nanowires

Many present and future applications of superconductivity would benefit from electrostatic control of carrier density and tunneling rates, the hallmark of semiconductor devices. One particularly exciting application is the realization of topological superconductivity as a basis for quantum information processing. Proposals in this direction based on proximity effect in semiconductor nanowires are appealing because the key ingredients are currently in hand. However, previous instances of proximitized semiconductors show significant tunneling conductance below the superconducting gap, suggesting a continuum of subgap states---a situation that nullifies topological protection. Here, we report a hard superconducting gap induced by proximity effect in a semiconductor, using epitaxial Al-InAs superconductor-semiconductor nanowires. The hard gap, along with favorable material properties and gate-tunability, makes this new hybrid system attractive for a number of applications, as well as fundamental studies of mesoscopic superconductivity.

cond-mat.mes-hall↗

arXiv2015

Parity lifetime of bound states in a proximitized semiconductor nanowire

Quasiparticle excitations can compromise the performance of superconducting devices, causing high frequency dissipation, decoherence in Josephson qubits, and braiding errors in proposed Majorana-based topological quantum computers. Quasiparticle dynamics have been studied in detail in metallic superconductors but remain relatively unexplored in semiconductor-superconductor structures, which are now being intensely pursued in the context of topological superconductivity. To this end, we introduce a new physical system comprised of a gate-confined semiconductor nanowire with an epitaxially grown superconductor layer, yielding an isolated, proximitized nanowire segment. We identify Andreev-like bound states in the semiconductor via bias spectroscopy, determine the characteristic temperatures and magnetic fields for quasiparticle excitations, and extract a parity lifetime (poisoning time) of the bound state in the semiconductor exceeding 10 ms.

cond-mat.mes-hall↗

arXiv2014

Epitaxy of Semiconductor-Superconductor nanowires

Controlling the properties of semiconductor/metal interfaces is a powerful method for designing functionality and improving the performance of electrical devices. Recently semiconductor/superconductor hybrids have appeared as an important example where the atomic scale uniformity of the interface plays a key role for the quality of the induced superconducting gap. Here we present epitaxial growth of semiconductor-metal core-shell nanowires by molecular beam epitaxy, a method that provides a conceptually new route to controlled electrical contacting of nanostructures and for designing devices for specialized applications such as topological and gate-controlled superconducting electronics. Our materials of choice, InAs/Al, are grown with epitaxially matched single plane interfaces, and alternative semiconductor/metal combinations allowing epitaxial interface matching in nanowires are discussed. We formulate the grain growth kinetics of the metal phase in general terms of continuum parameters and bicrystal symmetries. The method realizes the ultimate limit of uniform interfaces and appears to solve the soft-gap problem in superconducting hybrid structures.

cond-mat.mtrl-sci↗

arXiv2013

Epitaxial aluminum contacts to InAs nanowires

We report a method for making epitaxial superconducting contacts to semiconducting nanowires. The temperature and gate characteristics demonstrate barrier-free electrical contact, and the properties in the superconducting state are investigated at low temperature. Half-covering aluminum contacts are realized without the need of lithography and we demonstrate how to controllably insert high-band gap layers in the interface region. These developments are relevant to hybrid superconductor-nanowire devices that support Majorana zero energy states.

cond-mat.mtrl-sci↗

arXiv2013

A high-mobility two-dimensional electron gas at the heteroepitaxial spinel/perovskite complex oxide interface of γ-Al2O3/SrTiO3

The discovery of two-dimensional electron gases (2DEGs) at the heterointerface between two insulating perovskite-type oxides, such as LaAlO3 and SrTiO3, provides opportunities for a new generation of all-oxide electronic and photonic devices. However, significant improvement of the interfacial electron mobility beyond the current value of approximately 1,000 cm2V-1s-1 (at low temperatures), remains a key challenge for fundamental as well as applied research of complex oxides. Here, we present a new type of 2DEG created at the heterointerface between SrTiO3 and a spinel γ-Al2O3 epitaxial film with excellent quality and compatible oxygen ions sublattices. This spinel/perovskite oxide heterointerface exhibits electron mobilities more than one order of magnitude higher than those of perovskite/perovskite oxide interfaces, and demonstrates unambiguous two-dimensional conduction character as revealed by the observation of quantum magnetoresistance oscillations. Furthermore, we find that the spinel/perovskite 2DEG results from interface-stabilized oxygen vacancies and is confined within a layer of 0.9 nm in proximity to the heterointerface. Our findings pave the way for studies of mesoscopic physics with complex oxides and design of high-mobility all-oxide electronic devices.

cond-mat.mtrl-sci↗

arXiv2012

Tunneling Spectroscopy of Quasiparticle Bound States in a Spinful Josephson Junction

The spectrum of a segment of InAs nanowire, confined between two superconducting leads, was measured as function of gate voltage and superconducting phase difference using a third normal-metal tunnel probe. Sub-gap resonances for odd electron occupancy---interpreted as bound states involving a confined electron and a quasiparticle from the superconducting leads, reminiscent of Yu-Shiba-Rusinov states---evolve into Kondo-related resonances at higher magnetic fields. An additional zero bias peak of unknown origin is observed to coexist with the quasiparticle bound states.

cond-mat.mes-hall↗

arXiv2009

Mesoscopic conductance fluctuations in InAs nanowire-based SNS junctions

We report a systematic experimental study of mesoscopic conductance fluctuations in superconductor/normal/superconductor (SNS) devices Nb/InAs-nanowire/Nb. These fluctuations far exceed their value in the normal state and strongly depend on temperature even in the low-temperature regime. This dependence is attributed to high sensitivity of perfectly conducting channels to dephasing and the SNS fluctuations thus provide a sensitive probe of dephasing in a regime where normal transport fails to detect it. Further, the conductance fluctuations are strongly non-linear in bias voltage and reveal sub-gap structure. The experimental findings are qualitatively explained in terms of multiple Andreev reflections in chaotic quantum dots with imperfect contacts.

cond-mat.mes-hall↗

arXiv2009

Superconductivity-enhanced bias spectroscopy in carbon nanotube quantum dots

We study low-temperature transport through carbon nanotube quantum dots in the Coulomb blockade regime coupled to niobium-based superconducting leads. We observe pronounced conductance peaks at finite source-drain bias, which we ascribe to elastic and inelastic cotunneling processes enhanced by the coherence peaks in the density of states of the superconducting leads. The inelastic cotunneling lines display a marked dependence on the applied gate voltage which we relate to different tunneling-renormalizations of the two subbands in the nanotube. Finally, we discuss the origin of an especially pronounced sub-gap structure observed in every fourth Coulomb diamond.

cond-mat.mes-hall↗

arXiv2009

Nonequilibrium Cotunneling through a Three-Level Quantum Dot

We calculate the nonlinear cotunneling conductance through a quantum dot with 3 electrons occupying the three highest lying energy levels. Starting from a 3-orbital Anderson model, we apply a generalized Schrieffer-Wolff transformation to derive an effective Kondo model for the system. Within this model we calculate the nonequilibrium occupation numbers and the corresponding cotunneling current to leading order in the exchange couplings. We identify the inelastic cotunneling thresholds and their splittings with applied magnetic field, and make a qualitative comparison to recent experimental data on carbon nanotube and InAs quantum-wire quantum dots. Further predictions of the model like cascade resonances and a magnetic-field dependence of the orbital level splitting are not yet observed but within reach of recent experimental work on carbon nanotube and InAs nanowire quantum dots.

cond-mat.str-el↗

arXiv2008

Giant fluctuations and gate control of the g-factor in InAs Nanowire Quantum Dots

We study the g-factor of discrete electron states in InAs nanowire based quantum dots. The g values are determined from the magnetic field splitting of the zero bias anomaly due to the spin 1/2-Kondo effect. Unlike to previous studies based on 2DEG quantum dots, the g-factors of neighboring electron states show a surprisingly large fluctuation: g can scatter between 2 and 18. Furthermore electric gate tunability of the g-factor is demonstrated.

cond-mat.mes-hall↗

arXiv2006

Kondo physics in tunable semiconductor nanowire quantum dots

We have observed the Kondo effect in strongly coupled semiconducting nanowire quantum dots. The devices are made from indium arsenide nanowires, grown by molecular beam epitaxy, and contacted by titanium leads. The device transparency can be tuned by changing the potential on a gate electrode, and for increasing transparencies the effects dominating the transport changes from Coulomb Blockade to Universal Conductance Fluctuations with Kondo physics appearing in the intermediate region.

cond-mat.mes-hall↗