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arXiv · 1309.4569

Epitaxial aluminum contacts to InAs nanowires

N. L. B. Ziino·P. Krogstrup·M. H. Madsen·E. Johnson·J. B. Wagner·C. M. Marcus·J. Nygård·T. S. Jespersen
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Abstract

We report a method for making epitaxial superconducting contacts to semiconducting nanowires. The temperature and gate characteristics demonstrate barrier-free electrical contact, and the properties in the superconducting state are investigated at low temperature. Half-covering aluminum contacts are realized without the need of lithography and we demonstrate how to controllably insert high-band gap layers in the interface region. These developments are relevant to hybrid superconductor-nanowire devices that support Majorana zero energy states.

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N. L. B. Ziino, P. Krogstrup, M. H. Madsen, E. Johnson, J. B. Wagner, C. M. Marcus, J. Nygård, T. S. Jespersen. 2013-09-18. Epitaxial aluminum contacts to InAs nanowires. https://arxiv.org/abs/1309.4569

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