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T. Taniguchi

Publications and source records attributed to T. Taniguchi.

At least 235 records · Page 13Linked to original sources

Insulating state in low-disorder graphene nanoribbons

We report on quantum transport measurements on etched graphene nanoribbons encapsulated in hexagonal boron nitride (hBN). At zero magnetic field our devices behave qualitatively very similar to what has been reported for graphene nanoribbons on $\text{SiO}_2$ or hBN, but exhibit a considerable smaller transport gap. At magnetic fields of around $3~$T the transport behavior changes considerably and is dominated by a much larger energy gap induced by electron-electron interactions completely suppressing transport. This energy gap increases with a slope on the order of $3-4~ $meV/T reaching values of up to $ 30~\mathrm{meV} $ at $ 9~ $T.

cond-mat.mes-hall↗

Revealing exciton masses and dielectric properties of monolayer semiconductors with high magnetic fields

In semiconductor physics, many essential optoelectronic material parameters can be experimentally revealed via optical spectroscopy in sufficiently large magnetic fields. For monolayer transition-metal dichalcogenide semiconductors, this field scale is substantial --tens of teslas or more-- due to heavy carrier masses and huge exciton binding energies. Here we report absorption spectroscopy of monolayer MoS$_2$, MoSe$_2$, MoTe$_2$, and WS$_2$ in very high magnetic fields to 91~T. We follow the diamagnetic shifts and valley Zeeman splittings of not only the exciton's $1s$ ground state but also its excited $2s$, $3s$, ..., $ns$ Rydberg states. This provides a direct experimental measure of the effective (reduced) exciton masses and dielectric properties. Exciton binding energies, exciton radii, and free-particle bandgaps are also determined. The measured exciton masses are heavier than theoretically predicted, especially for Mo-based monolayers. These results provide essential and quantitative parameters for the rational design of opto-electronic van der Waals heterostructures incorporating 2D semiconductors.

cond-mat.mes-hall↗

Electronic Compressibility of Magic-Angle Graphene Superlattices

We report the first electronic compressibility measurements of magic-angle twisted bilayer graphene. The evolution of the compressibility with carrier density offers insights into the interaction-driven ground state that have not been accessible in prior transport and tunneling studies. From capacitance measurements, we determine chemical potential as a function of carrier density and find the widths of the energy gaps at fractional filling of the moiré lattice. In the electron-doped regime, we observe unexpectedly large gaps at quarter- and half-filling and strong electron-hole asymmetry. Moreover, we measure a $\mathord{\sim}35\,\textrm{meV}$ mini-bandwidth that is much wider than most theoretical estimates. Finally, we explore the field dependence up to the quantum Hall regime and observe significant differences from transport measurements.

cond-mat.mes-hall↗

Control of the Exciton Radiative Lifetime in van der Waals Heterostructures

Optical properties of atomically thin transition metal dichalcogenides are controlled by robust excitons characterized by a very large oscillator strength. Encapsulation of monolayers such as MoSe$_2$ in hexagonal boron nitride (hBN) yields narrow optical transitions approaching the homogenous exciton linewidth. We demonstrate that the exciton radiative rate in these van der Waals heterostructures can be tailored by a simple change of the hBN encapsulation layer thickness as a consequence of the Purcell effect. The time-resolved photoluminescence measurements together with cw reflectivity and photoluminescence experiments show that the neutral exciton spontaneous emission time can be tuned by one order of magnitude depending on the thickness of the surrounding hBN layers. The inhibition of the radiative recombination can yield spontaneous emission time up to $10$~ps. These results are in very good agreement with the calculated recombination rate in the weak exciton-photon coupling regime. The analysis shows that we are also able to observe a sizeable enhancement of the exciton radiative decay rate. Understanding the role of these electrodynamical effects allow us to elucidate the complex dynamics of relaxation and recombination for both neutral and charged excitons.

cond-mat.mes-hall↗

Energy spectrum of two-dimensional excitons in a non-uniform dielectric medium

We demonstrate that, in monolayers (MLs) of semiconducting transition metal dichalcogenides, the $s$-type Rydberg series of excitonic states follows a simple energy ladder: $ε_n=-Ry^*/(n+δ)^2$, $n$=1,2,\ldots, in which $Ry^*$ is very close to the Rydberg energy scaled by the dielectric constant of the medium surrounding the ML and by the reduced effective electron-hole mass, whereas the ML polarizability is only accounted for by $δ$. This is justified by the analysis of experimental data on excitonic resonances, as extracted from magneto-optical measurements of a high-quality WSe$_2$ ML encapsulated in hexagonal boron nitride (hBN), and well reproduced with an analytically solvable Schrödinger equation when approximating the electron-hole potential in the form of a modified Kratzer potential. Applying our convention to other, MoSe$_2$, WS$_2$, MoS$_2$ MLs encapsulated in hBN, we estimate an apparent magnitude of $δ$ for each of the studied structures. Intriguingly, $δ$ is found to be close to zero for WSe$_2$ as well as for MoS$_2$ monolayers, what implies that the energy ladder of excitonic states in these two-dimensional structures resembles that of Rydberg states of a three-dimensional hydrogen atom.

cond-mat.mes-hall↗

Intrinsic quantized anomalous Hall effect in a moiré heterostructure

We report the observation of a quantum anomalous Hall effect in twisted bilayer graphene showing Hall resistance quantized to within .1\% of the von Klitzing constant $h/e^2$ at zero magnetic field.The effect is driven by intrinsic strong correlations, which polarize the electron system into a single spin and valley resolved moiré miniband with Chern number $C=1$. In contrast to extrinsic, magnetically doped systems, the measured transport energy gap $Δ/k_B\approx 27$~K is larger than the Curie temperature for magnetic ordering $T_C\approx 9$~K, and Hall quantization persists to temperatures of several Kelvin. Remarkably, we find that electrical currents as small as 1~nA can be used to controllably switch the magnetic order between states of opposite polarization, forming an electrically rewritable magnetic memory.

cond-mat.str-el↗

Integrated impedance bridge for absolute capacitance measurements at cryogenic temperatures and finite magnetic fields

We developed an impedance bridge that operates at cryogenic temperatures (down to 60 mK) and in perpendicular magnetic fields up to at least 12 T. This is achieved by mounting a GaAs HEMT amplifier perpendicular to a printed circuit board containing the device under test and thereby parallel to the magnetic field. The measured amplitude and phase of the output signal allows for the separation of the total impedance into an absolute capacitance and a resistance. Through a detailed noise characterization, we find that the best resolution is obtained when operating the HEMT amplifier at the highest gain. We obtained a resolution in the absolute capacitance of 6.4~aF$/\sqrt{\textrm{Hz}}$ at 77 K on a comb-drive actuator, while maintaining a small excitation amplitude of 15~$k_\text{B} T/e$. We show the magnetic field functionality of our impedance bridge by measuring the quantum Hall plateaus of a top-gated hBN/graphene/hBN heterostructure at 60~mK with a probe signal of 12.8~$k_\text{B} T/e$.

physics.ins-det↗

2$Φ_{0}$-periodic magnetic interference in ballistic graphene Josephson junctions

We investigate supercurrent interference patterns measured as a function of magnetic field in ballistic graphene Josephson junctions. At high doping, the expected $Φ_{0}$-periodic "Fraunhofer" pattern is observed, indicating a uniform current distribution. Close to the Dirac point, we find anomalous interference patterns with an apparent 2$Φ_{0}$ periodicity, similar to that predicted for topological Andreev bound states carrying a charge of $e$ instead of $2e$. This feature persists with increasing temperature, ruling out a non-sinusoidal current-phase relationship. It also persists in junctions in which sharp vacuum edges are eliminated. Our results indicate that the observed behavior may originate from an intrinsic property of ballistic graphene Josephson junctions, though the exact mechanism remains unclear.

cond-mat.mes-hall↗

Probing and manipulating valley coherence of dark excitons in monolayer WSe$_2$

Monolayers of semiconducting transition metal dichalcogenides are two-dimensional direct-gap systems which host tightly-bound excitons with an internal degree of freedom corresponding to the valley of the constituting carriers. Strong spin-orbit interaction and the resulting ordering of the spin-split subbands in the valence and conduction bands makes the lowest-lying excitons in WX$_2$ (X~being S or Se) spin-forbidden and optically dark. With polarization-resolved photoluminescence experiments performed on a WSe$_2$ monolayer encapsulated in a hexagonal boron nitride, we show how the intrinsic exchange interaction in combination with the applied in-plane and/or out-of-plane magnetic fields enables one to probe and manipulate the valley degree of freedom of the dark excitons.

cond-mat.mes-hall↗

Magneto-spectroscopy of exciton Rydberg states in a CVD grown WSe2 monolayer

The results of magneto-optical spectroscopy investigations of excitons in a CVD grown monolayer of WSe2 encapsulated in hexagonal boron nitride are presented. The emission linewidth for the 1s state is of 4:7 meV, close to the narrowest emissions observed in monolayers exfoliated from bulk material. The 2s excitonic state is also observed at higher energies in the photoluminescence spectrum. Magneto-optical spectroscopy allows for the determination of the g-factors and of the spatial extent of the excitonic wave functions associated with these emissions. Our work establishes CVD grown monolayers of transition metal dichalcogenides as a mature technology for optoelectronic applications.

cond-mat.mes-hall↗

Interlayer Charge Transfer and Defect Creation in Type I van der Waals Heterostructures

Van der Waals heterostructures give access to a wide variety of new phenomena that emerge thanks to the combination of properties brought in by the constituent layered materials. We show here that owing to an enhanced interaction cross section with electrons in a type I van der Waals heterostructure, made of single layer molybdenum disulphide and thin boron nitride films, electrons and holes created in boron nitride can be transferred to the dichalcogenide where they form electron-hole pairs yielding luminescence. This cathodoluminescence can be mapped with a spatial resolution far exceeding what can be achieved in a typical photoluminescence experiment, and is highly valuable to understand the optoelectronic properties at the nanometer scale. We find that in heterostructures prepared following the mainstream dry transfer technique, cathodoluminescence is locally extinguished, and we show that this extinction is associated with the formation of defects, that are detected in Raman spectroscopy and photoluminescence. We establish that to avoid defect formation induced by low-energy electron beams and to ensure efficient transfer of electrons and holes at the interface between the layers, flat and uniform interlayer interfaces are needed, that are free of trapped species, airborne ones or contaminants associated with sample preparation. We show that heterostructure fabrication using a pick-up technique leads to superior, intimate interlayer contacts associated with significantly more homogeneous cathodoluminescence.

cond-mat.mes-hall↗

Upconverted electroluminescence via Auger scattering of interlayer excitons in van der Waals heterostructures

The intriguing physics of carrier-carrier interactions, which likewise affect the operation of light emitting devices, stimulate the research on semiconductor structures at high densities of excited carriers, a limit reachable at large pumping rates or in systems with long-lived electron-hole pairs. By electrically injecting carriers into WSe$_2$/MoS$_2$ type-II heterostructures which are indirect in real and k-space, we establish a large population of typical optically silent interlayer excitons. Here, we reveal their emission spectra and show that the emission energy is tunable by an applied electric field. When the population is further increased by suppressing the radiative recombination rate with the introduction of an hBN spacer between WSe$_2$ and MoS$_2$, Auger-type and exciton-exciton annihilation processes become important. These processes are traced by the observation of an up-converted emission demonstrating that excitons gaining energy in non-radiative Auger processes can be recovered and recombine radiatively.

cond-mat.mes-hall↗

Unconventional thermal metallic state of charge-neutral fermions in an insulator

Quantum oscillations (QOs) in transport and thermodynamic parameters at high magnetic fields are an unambiguous signature of the Fermi surface, the defining characteristic of a metal. Therefore, recent observations of QOs in insulating SmB$_6$ and YbB$_{12}$, in particular the QOs of the resistivity $ρ_{xx}$ in YbB$_{12}$, have been a big surprise, pointing to the formation of a novel state of quantum matter. Despite the large charge gap inferred from the insulating behaviour of $ρ_{xx}$, these compounds seemingly host a Fermi surface at high magnetic fields. However, the nature of the ground state in zero field has been little explored. Here we report the use of low-temperature heat-transport measurements to discover gapless, itinerant, charge-neutral excitations in the ground state of YbB$_{12}$. At zero field, despite $ρ_{xx}$ being far larger than that of conventional metals, a sizable linear temperature dependent term in the thermal conductivity is clearly resolved in the zero-temperature limit ($κ_{xx}/T(T\rightarrow0)=κ_{xx}^0/T\neq0$). Such a residual $κ_{xx}^0/T$ term at zero field, which is absent in SmB$_6$, leads to a spectacular violation of the Wiedemann-Franz law: the Lorenz ratio $L=κ_{xx}ρ_{xx}/T$ is $10^{4}$-$10^{5}$ times larger than that expected in conventional metals. These data indicate that YbB$_{12}$ is a charge insulator but a thermal metal, suggesting the presence of itinerant neutral fermions. Remarkably, more insulating crystals with larger activation energies exhibit a larger amplitude of the resistive QOs as well as a larger $κ_{xx}^0/T$, in stark contrast to conventional metals. Moreover, we find that these fermions couple to magnetic field, despite their charge neutrality. Our findings expose novel gapless and highly itinerant, charge-neutral quasiparticles in this unconventional quantum state.

cond-mat.str-el↗

Impact of intrinsic and extrinsic imperfections on the electronic and optical properties of MoS2

Intrinsic and extrinsic disorder from lattice imperfections, substrate and environment has a strong effect on the local electronic structure and hence the optical properties of atomically thin transition metal dichalcogenides that are determined by strong Coulomb interaction. Here, we examine the role of the substrate material and intrinsic defects in monolayer MoS2 crystals on SiO2 and hBN substrates using a combination of scanning tunneling spectroscopy, scanning tunneling microscopy, optical absorbance, and low-temperature photoluminescence measurements. We find that the different substrates significantly impact the optical properties and the local density of states near the conduction band edge observed in tunneling spectra. While the SiO2 substrates induce a large background doping with electrons and a substantial amount of band tail states near the conduction band edge of MoS2, such states as well as the high doping density are absent using high quality hBN substrates. By accounting for the substrate effects we obtain a quasiparticle gap that is in excellent agreement with optical absorbance spectra and we deduce an exciton binding energy of about 480 meV. We identify several intrinsic lattice defects that are ubiquitious in MoS2, but we find that on hBN substrates the impact of these defects appears to be passivated. We conclude that the choice of substrate controls both the effects of intrinsic defects and extrinsic disorder, and thus the electronic and optical properties of MoS2. The correlation of substrate induced disorder and defects on the electronic and optical properties of MoS2 contributes to an in-depth understanding of the role of the substrates on the performance of 2D materials and will help to further improve the properties of 2D materials based quantum nanosystems.

cond-mat.mtrl-sci↗

Chiral Quasiparticle Tunneling Between Quantum Hall Edges in Proximity with a Superconductor

We study a two-terminal graphene Josephson junction with contacts shaped to form a narrow constriction, less than 100nm in length. The contacts are made from type II superconducting contacts and able to withstand magnetic fields high enough to reach the quantum Hall (QH) regime in graphene. In this regime, the device conductance is determined by edge states, plus the contribution from the constricted region. In particular, the constriction area can support supercurrents up to fields of ~2.5T. Moreover, enhanced conductance is observed through a wide range of magnetic fields and gate voltages. This additional conductance and the appearance of supercurrent is attributed to the tunneling between counter-propagating quantum Hall edge states along opposite superconducting contacts.

cond-mat.mes-hall↗

Excited states in bilayer graphene quantum dots

We report on ground- and excited state transport through an electrostatically defined few-hole quantum dot in bilayer graphene in both parallel and perpendicular applied magnetic fields. A remarkably clear level scheme for the two-particle spectra is found by analyzing finite bias spectroscopy data within a two-particle model including spin and valley degrees of freedom. We identify the two-hole ground-state to be a spin-triplet and valley-singlet state. This spin alignment can be seen as Hund's rule for a valley-degenerate system, which is fundamentally different to quantum dots in carbon nano tubes and GaAs-based quantum dots. The spin-singlet excited states are found to be valley-triplet states by tilting the magnetic field with respect to the sample plane. We quantify the exchange energy to be 0.35meV and measure a valley and spin g-factor of 36 and 2, respectively.

cond-mat.mes-hall↗

High-mobility, wet-transferred graphene grown by chemical vapor deposition

We report high room-temperature mobility in single layer graphene grown by Chemical Vapor Deposition (CVD) after wet transfer on SiO$_2$ and hexagonal boron nitride (hBN) encapsulation. By removing contaminations trapped at the interfaces between single-crystal graphene and hBN, we achieve mobilities up to$\sim70000cm^2 V^{-1} s^{-1}$ at room temperature and$\sim120000cm^2 V^{-1} s^{-1}$ at 9K. These are over twice those of previous wet transferred graphene and comparable to samples prepared by dry transfer. We also investigate the combined approach of thermal annealing and encapsulation in polycrystalline graphene, achieving room temperature mobilities$\sim30000 cm^2 V^{-1} s^{-1}$. These results show that, with appropriate encapsulation and cleaning, room temperature mobilities well above $10000cm^2 V^{-1} s^{-1}$ can be obtained in samples grown by CVD and transferred using a conventional, easily scalable PMMA-based wet approach.

cond-mat.mes-hall↗

Tunable crystal symmetry in graphene-boron nitride heterostructures with coexisting moiré superlattices

In heterostructures consisting of atomically thin crystals layered on top of one another, lattice mismatch or rotation between the layers results in long-wavelength moiré superlattices. These moiré patterns can drive significant band structure reconstruction of the composite material, leading to a wide range of emergent phenomena including superconductivity, magnetism, fractional Chern insulating states, and moiré excitons. Here, we investigate monolayer graphene encapsulated between two crystals of boron nitride (BN), where the rotational alignment between all three components can be varied. We find that band gaps in the graphene arising from perfect rotational alignment with both BN layers can be modified substantially depending on whether the relative orientation of the two BN layers is 0 or 60 degrees, suggesting a tunable transition between the absence or presence of inversion symmetry in the heterostructure. Small deviations ($<1^{\circ}$) from perfect alignment of all three layers leads to coexisting long-wavelength moiré potentials, resulting in a highly reconstructed graphene band structure featuring multiple secondary Dirac points. Our results demonstrate that the interplay between multiple moiré patterns can be utilized to controllably modify the electronic properties of the composite heterostructure.

cond-mat.mes-hall↗