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Tae-Hoon Lee

Publications and source records attributed to Tae-Hoon Lee.

4 recordsLinked to original sources

RL-SPH: Learning to Achieve Feasible Solutions for Integer Linear Programs

Primal heuristics play a crucial role in quickly finding feasible solutions for NP-hard integer linear programming (ILP). Although $\textit{end-to-end learning}$-based primal heuristics (E2EPH) have recently been proposed, they are typically unable to independently generate feasible solutions. To address this challenge, we propose RL-SPH, a novel reinforcement learning-based start primal heuristic capable of independently generating feasible solutions, even for ILP involving non-binary integers. Empirically, RL-SPH rapidly obtains high-quality feasible solutions with a 100% feasibility rate, achieving on average a 28.6$\times$ lower primal gap and a 2.6$\times$ lower primal integral compared to existing start primal heuristics.

cs.LG

Electrical properties of Bi-implanted amorphous chalcogenide films

The impact of Bi implantation on the conductivity and the thermopower of amorphous chalcogenide films is investigated. Incorporation of Bi in Ge-Sb-Te and GeTe results in enhanced conductivity. The negative Seebeck coefficient confirms onset of the electron conductivity in GeTe implanted with Bi at a dose of 2x1016 cm-2. The enhanced conductivity is accompanied by defect accumulation in the films upon implantation as is inferred by using analysis of the space-charge limited current. The results indicate that native coordination defects in lone-pair semiconductors can be deactivated by means of ion implantation, and higher conductivity of the films stems from additional electrically active defects created by implantation of bismuth.

cond-mat.mtrl-sci

n-Type Chalcogenides by Ion Implantation

Carrier-type reversal to enable the formation of semiconductor p-n junctions is a prerequisite for many electronic applications. Chalcogenide glasses are p-type semiconductors and their applications have been limited by the extraordinary difficulty in obtaining n-type conductivity. The ability to form chalcogenide glass p-n junctions could improve the performance of phase-change memory and thermoelectric devices and allow the direct electronic control of nonlinear optical devices. Previously, carrier-type reversal has been restricted to the GeCh (Ch=S, Se, Te) family of glasses, with very high Bi or Pb doping concentrations (5 to 11 at.%) incorporated during high-temperature glass melting. Here we report the first n-type doping of chalcogenide glasses by ion implantation of Bi into GeTe and GaLaSO amorphous films, demonstrating rectification and photocurrent in a Bi-implanted GaLaSO device. The electrical doping effect of Bi is observed at a 100 times lower concentration than for Bi melt-doped GeCh glasses.

cond-mat.mtrl-sci

Cosmological Coincidence without Fine Tuning

We present a simple cosmological model in which a single, non-minimally coupled scalar field with a quartic potential is responsible for both inflation at early times and acceleration at late times. Little or no fine tuning is needed to explain why the present density of dark energy is comparable to that of pressureless matter. Dark energy is identified with the potential of the scalar field, which is sourced by the trace of the energy-momentum tensor. This becomes significant when matter has decoupled from radiation and become fully non-relativistic, so that $ϕ\proptoρ_m^{1/3}\proptoρ_{m,0}^{1/3}(a_0/a)\sim(10^{-120})^{1/3}(10^{10})\sim10^{-30}$ and $V\simϕ^4\sim10^{-120}$ in Planck units, as observed.

hep-th