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Tai Kong

Publications and source records attributed to Tai Kong.

At least 37 records · Page 2Linked to original sources

Mn(Pt$_{1-x}$Pd$_{x}$)$_5$P: Isovalent Tuning of Mn Sublattice Magnetic Order

We report the growth and characterization of MnPd$_5$P, a ferromagnet with T$_C$ $\approx$ 295 K, and conduct a substitutional study with its antiferromagnetic analogue MnPt$_5$P. We grow single crystals of MnPd$_5$P and Mn(Pt$_{1-x}$Pd$_x$)$_5$P by adding Mn into (Pt$_{1-x}$Pd$_{x}$)-P based melts. All compounds in the family adopt the layered anti-CeCoIn$_5$ structure with space group P4/mmm, and EDS and XRD results indicate that MnPt$_5$P and MnPd$_5$P form a solid solution. Based on magnetization and resistance data, we construct a T-x phase diagram for Mn(Pt$_{1-x}$Pd$_x$)$_5$P and demonstrate the antiferromagnetic order found in MnPt$_5$P is extraordinarily sensitive to Pd substitution. At low Pd fractions (x $<$ 0.010), the single antiferromagnetic transition in pure MnPt$_5$P splits into a higher temperature ferromagnetic transition followed on cooling by a lower temperature ferromagnetic to antiferromagnetic transition and then by a re-entrant antiferromagnetic to ferromagnetic transition at lower temperatures. The antiferromagnetic region makes up a bubble that persists to x $\approx$ 0.009 for T $\approx$ 150 K, with all samples x $<$ 0.009 recovering their initial ferromagnetic state with further cooling to base temperature. Over the same low x range we find a non-monotonic change in the room temperature unit cell volume, further suggesting that pure MnPt$_5$P is close to an instability. Once x $>$ 0.010, Mn(Pt$_{1-x}$Pd$_x$)$_5$P undergoes a single ferromagnetic transition. The Curie temperature increases rapidly with x, rising from T$_C$ $\approx$ 197 K at x = 0.013 to a maximum of T$_C$ $\approx$ 312 K for x $\approx$ 0.62, and then falls back to T$_C$ $\approx$ 295 K for pure MnPd$_5$P (x = 1). Given that Pt and Pd are isoelectronic, this work raises questions as to the origin of the extreme sensitivity of the magnetic ground state in MnPt$_5$P upon introducing Pd.

cond-mat.mtrl-sci↗

Single crystal synthesis and magnetic properties of a Shastry-Sutherland lattice compound BaNd2ZnS5

Single crystals of a Shastry-Sutherland magnetic semiconductor, BaNd2ZnS5, were synthesized through a high-temperature solution growth technique. Physical properties were characterized by powder and single crystal x-ray diffraction, temperature- and field-dependent magnetization, and temperature-dependent specific heat measurements. BaNd2ZnS5 orders antiferromagnetically at 2.9 K, with magnetic moments primarily aligned within the ab-plane. Magnetic isothermal measurements show metamagnetic transitions at ~ 15 kOe for the [110] direction and ~ 21 kOe for the [100] direction. Estimated magnetic entropy suggests a double ground state for each Nd ion.

cond-mat.mtrl-sci↗

Polarization dependent photoemission as a probe of the magnetic ground state in the layered ferromagnet VI3

Layered ferromagnets are thrilling materials from both a fundamental and technological point of view. VI3 is an interesting example, with a complex magnetism that differentiates it from the first reported Cr based layered ferromagnets. Here, we show in an indirect way through Angle Resolved Photoemission Spectroscopy (ARPES) experiments, the importance of spin-orbit coupling setting the electronic properties of this material. Our light polarized photoemission measurements point to a ground state with a half-filled e'_+- doublet, where a gap opening is triggered by spin-orbit coupling enhanced by electronic correlations.

cond-mat.mes-hall↗

Theory-guided investigation on magnetic evolution of MnPt$_{5-x}$Pd$_x$P and discovery of anti-CeCoIn$_5$-type ferromagnetic MnPd$_5$P

We report the magnetic changes from canted antiferromagnetic to ferromagnetic orderings in anti-115-type MnPt$_{5-x}$Pd$_x$P ($x$ = 1, 2, 2.5, 3, 4, and 5) and the discovery of a new rare-earth-free ferromagnet, MnPd$_5$P by both theoretical prediction and experimental investigation. The family compounds were synthesized using high temperature solid state method and characterized to crystalize in the anti-CeCoIn$_5$ type with the space group P4/mmm exhibiting a two-dimensional layered structural feature. The magnetic property measurements indicate that the compounds ordered from canted A-type antiferromagnet in MnPt$_5$P to ferromagnet above the room temperature with varying degrees of coercivity and magnetic moments in MnPd$_5$P by reducing the spin orbital coupling. The results of the MnPt$_{5-x}$Pd$_x$P have been analyzed in comparison to the other candidates of the 151 family of Mn(Pt/Pd)$_5$(P/As) to understand the complex structure-magnetism relationships.

cond-mat.mtrl-sci↗

Spin stiffness of chromium-based van der Waals ferromagnets

Low temperature magnetization of CrI3, CrSiTe3 and CrGeTe3 single crystals were systematically studied. Based on the temperature dependence of extrapolated spontaneous magnetization from magnetic isotherms measured at different temperatures, the spin stiffness constant (D) and spin excitation gap ($Δ$) were extracted according to Bloch's law. For spin stiffness, D is estimated to be 27${\pm}$6 meV $Å^2$, 20${\pm}$3 meV $Å^2$ and 38${\pm}$7 meV $Å^2$ for CrI3, CrSiTe3 and CrGeTe3 respectively. Spin excitation gaps determined via Bloch's formulation have larger error bars yielding 0.59${\pm}$0.34 meV (CrI3), 0.37${\pm}$0.22 meV (CrSiTe3) and 0.28${\pm}$0.19 meV (CrGeTe3). Among all three studied compounds, larger spin stiffness value leads to higher ferromagnetic transition temperature.

cond-mat.mtrl-sci↗

Multiple ferromagnetic transitions and structural distortion in the van-der-Waals ferromagnet VI$_3$ at ambient and finite pressures

We present a combined study of zero-field $^{51}$V and $^{127}$I NMR at ambient pressure and specific heat and magnetization measurements under pressure up to 2.08 GPa on bulk single crystals of the van-der-Waals ferromagnet VI$_3$. At ambient pressure, our results consistently demonstrate that VI$_3$ undergoes a structural transition at $T_s \approx $78 K, followed by two subsequent ferromagnetic transitions at $T_{FM1} \approx $50 K and $T_{FM2} \approx $36 K upon cooling. At lowest temperature ($T < T_{FM2}$), two magnetically-ordered V sites exist, whereas only one magnetically-ordered V site is observed for $T_{FM1} < T\,< T_{FM2}$. Whereas $T_{FM1}$ is almost unaffected by external pressure, $T_{FM2}$ is highly responsive to pressure and merges with the $T_{FM1}$ line at $p \approx 0.6 $GPa. At even higher pressures ($p \approx $1.25\,GPa), the $T_{FM2}$ line merges with the structural transition at $T_s$ which becomes moderately suppressed with $p$ for $p < 1.25$ GPa. Taken together, our data point towards a complex magnetic structure and an interesting interplay of magnetic and structural degrees of freedom in VI$_3$.

cond-mat.str-el↗

Quadratic to linear magnetoresistance tuning in TmB4

The change of a material's electrical resistance (R) in response to an external magnetic field (B) provides subtle information for the characterization of its electronic properties and has found applications in sensor and storage related technologies. In good metals, Boltzmann's theory predicts a quadratic growth in magnetoresistance (MR) at low B, and saturation at high fields. On the other hand, a number of nonmagnetic materials with weak electronic correlation and low carrier concentration for metallicity, such as inhomogeneous conductors, semimetals, narrow gap semiconductors and topological insulators, two-dimensional electron gas (2DEG) show positive, non-saturating linear magnetoresistance (LMR). However, observation of LMR in single crystals of a good metal is rare. Here we present low-temperature, angle dependent magnetotransport in single crystals of the antiferromagnetic metal, TmB4. We observe large, positive and anisotropic MR(B), which can be tuned from quadratic to linear by changing the direction of the applied field. In view of the fact that isotropic, single crystalline metals with large Fermi surface (FS) are not expected to exhibit LMR, we attribute our observations to the anisotropic FS topology of TmB4. Furthermore, the linear MR is found to be temperature-independent, suggestive of quantum mechanical origin.

cond-mat.str-el↗

VI3 - a new layered ferromagnetic semiconductor

Two-dimensional (2D) materials are promising candidates for next-generation electronic devices. In this regime, insulating 2D ferromagnets, which remain rare, are of special importance due to their potential for enabling new device architectures. Here we report the discovery of ferromagnetism in a layered van der Waals semiconductor, VI3, which is based on honeycomb vanadium layers separated by an iodine-iodine van der Waals gap. It has a BiI3-type structure (R-3, No.148) at room temperature, and our experimental evidence suggests that it may undergo a subtle structural phase transition at 78 K. VI3 becomes ferromagnetic at 49 K, below which magneto-optical Kerr effect imaging clearly shows ferromagnetic domains, which can be manipulated by the applied external magnetic field. The optical band gap determined by reflectance measurements is 0.6 eV, and the material is highly resistive.

cond-mat.mtrl-sci↗

Degeneracy of the 1/8 plateau and antiferromagnetic phases in the Shastry-Sutherland magnet TmB4

The 1/8 fractional plateau phase (1/8-FPP) in Shastry-Sutherland Lattice (SSL) spin systems has been viewed an exemplar of emergence on an Archimedean lattice. Here we explore this phase in the Ising magnet TmB4 using high-resolution specific heat (C) and magnetization (M) in the field-temperature plane. We show that the 1/8-FPP is smoothly connected to the antiferromagnetic (AF) phase on ramping the field from H= 0. Thus, the 1/8-FPP is not a distinct ground state of TmB4. The implication of these results for Heisenberg spins on the SSL is discussed.

cond-mat.str-el↗

Trimers of MnO6 octahedra and ferrimagnetism of Ba4NbMn3O12

Ba4NbMn3O12 is reported, synthesized by a solid state method in air. The crystal structure, determined by performing refinements on room temperature powder X-ray diffraction data by the Rietveld method, consists of Mn3O12 trimers in the configuration of three face-sharing MnO6 octahedra, with the trimers arranged in triangular planes. An effective moment of 4.82 μB/f.u is observed and competing antiferromagnetic and ferromagnetic interactions between Mn ions are inferred from the Weiss temperature of -4 K and the ferrimagnetic ordering transition of approximately 42 K. Ba4NbMn3O12 is a semiconductor with a transport activation energy of 0.37 eV.

cond-mat.str-el↗

Collapse of Kondo state and ferromagnetic quantum phase transition in YbFe$_2$Zn$_{20}$

We present the electrical resistivity data under application of pressures up to $\sim$ 26 GPa and down to 50 mK temperatures on YbFe$_2$Zn$_{20}$. We find a pressure induced magnetic phase transition with an onset at $p_c$=18.2$\pm$0.8 GPa. At ambient pressure, YbFe$_2$Zn$_{20}$ manifests a heavy fermion, nonmagnetic ground state and the Fermi liquid behavior at low temperatures. As pressure is increased, the power law exponent in resistivity, $n$, deviates significantly from Fermi liquid behavior and tends to saturate with $n$ = 1 near $p_c$. A pronounced resistivity maximum, $T_\text{max}$, which scales with Kondo temperature is observed. $T_\text{max}$ decreases with increasing pressure and flattened out near $p_c$ indicating the suppression of Kondo exchange interaction. For $p>p_c$, $T_\text{max}$ shows a sudden upward shift, most likely becoming associated with crystal electric field scattering. Application of magnetic field for $p>p_c$ broadens the transition and shifts it toward the higher temperature, which is a typical behavior of the ferromagnetic transition. The magnetic transition appears to abruptly develop above $p_c$, suggesting probable first-order (with changing pressure) nature of the transition; once stabilized, the ordering temperature does not depend on pressure up to $\sim$ 26 GPa. Taken as a whole, these data suggest that YbFe$_2$Zn$_{20}$ has a quantum phase transition at $p_c$ = 18.2 GPa associated with the avoided quantum criticality in metallic ferromagnets.

cond-mat.str-el↗

A Family of Pb-based Superconductors with Variable Cubic to Hexagonal Packing

We describe three previously unreported superconductors, BaPb3, Ba0.89Sr0.11Pb3 and Ba0.5Sr0.5Pb3. These three materials, together with SrPb3, form a distinctive isoelectronic family of intermetallic superconductors based on the stacking of Pb planes, with crystal structures that display a hexagonal to cubic perovskite-like progression, as rarely seen in metals. The superconducting transition temperatures (Tc) are similar for all - 2.2 K for BaPb3, 2.7 K for Ba0.89Sr0.11Pb3 and 2.6 K for Ba0.5Sr0.5Pb3, and the previously reported Tc of SrPb3, ~ 2 K, is confirmed. The materials are moderate coupling superconductors, and calculations show that the electronic densities of states at the Fermi energy are primarily contributed by Pb. The observations suggest that the Pb-stacking variation has only a minor effect on the superconductivity.

cond-mat.supr-con↗

Stabilizing the Tb-based 214 cuprate by partial Pd substitution

Previously known to form only under high pressure synthetic conditions, here we report that the T'-type 214-structure cuprate based on the rare earth atom Tb is stabilized for ambient pressure synthesis through partial substitution of Pd for Cu. The new material is obtained in purest form for mixtures of nominal composition $Tb_{1.96}Cu_{0.80}Pd_{0.20}O_{4}$. The refined formula, in orthorhombic space group Pbca, with a = 5.5117(1) Å, b = 5.5088(1) Å, and c = 11.8818(1) Å, is $Tb_{2}Cu_{0.83}Pd_{0.17}O_{4}$. An incommensurate structural modulation is seen along the a axis by electron diffraction and high resolution imaging. Magnetic susceptibility measurements reveal long range antiferromagnetic ordering at 7.9 K, with a less pronounced feature at 95 K; a magnetic moment reorientation transition is observed to onset at a field of approximately 1.1 Tesla at 3 K. The material is an n-type semiconductor.

cond-mat.supr-con↗

A Geometrically Frustrated Trimer-Based Mott Insulator

The crystal structure of Ba4NbRu3O12 is based on triangular planes of elongated Ru3O12 trimers oriented perpendicular to the plane. We report that it is semiconducting, that its Weiss temperature and effective magnetic moment are -155 K and 2.59 μB/f.u. respectively, and that magnetic susceptibility and specific heat data indicate that it exhibits magnetic ordering near 4 K. The presence of a high density of low energy states is evidenced by a substantial Sommerfeld-like T-linear term (gamma = 31(2) mJ/mole-K^2) in the specific heat. Electronic structure calculations reveal that the electronic states at the Fermi Energy reside on the Ru3O12 trimers and that the calculated density of electronic states is high and continuous around the Fermi Energy - in other words density functional theory calculates the material to be a metal. Our results imply that Ba4NbRu3O12 is a geometrically frustrated trimer-based Mott insulator.

cond-mat.str-el↗

Realization of a Type-II Nodal-Line Semimetal in Mg$_3$Bi$_2$

Nodal-line semimetals (NLSs) represent a new type of topological semimetallic beyond Weyl and Dirac semimetals in the sense that they host closed loops or open curves of band degeneracies in the Brillouin zone. Parallel to the classification of type-I and type-II Weyl semimetals, there are two types of NLSs. The conventional NLS phase, in which the two bands forming the nodal line have opposite signs for their slopes along any direction perpendicular to the nodal line, has been proposed and realized in many compounds, whereas the exotic type-II NLS is very rare. Our first-principles calculations show that Mg$_3$Bi$_2$ is a material candidate that hosts a single type-II nodal loop around $Γ$. The band crossing is close to the Fermi level and the two crossing bands have the same sign in their slopes along the radial direction of the loop, indicating the type-II nature of the nodal line. Spin-orbit coupling generates only a small energy gap ($\sim$35 meV) at the nodal points and does not negate the band dispersion of Mg$_3$Bi$_2$ that yields the type-II nodal line. Based on this prediction we have synthesized Mg$_3$Bi$_2$ single crystals and confirmed the presence of the type-II nodal lines in the material. Our angle-resolved photoemission spectroscopy (ARPES) measurements agree well with our first-principles results and thus establish Mg$_3$Bi$_2$ as an ideal materials platform for studying the exotic properties of type-II nodal line semimetals.

cond-mat.mtrl-sci↗

Anisotropic magnetic properties of the ferromagnetic semiconductor CrSbSe$_3$

Single crystals of CrSbSe$_3$, a structurally pseudo-one-dimensional ferromagnetic semiconductor, were grown using a high-temperature solution growth technique and were characterized by x-ray diffraction, anisotropic, temperature- and field-dependent magnetization, temperature-dependent resistivity and optical absorption measurements. A band gap of 0.7 eV was determined from both resistivity and optical measurements. At high temperatures, CrSbSe$_3$ is paramagnetic and isotropic with a Curie-Weiss temperature of $\sim$145 K and an effective moment of $\sim$4.1 $μ_B$/Cr. A ferromagnetic transition occurs at $T_c$ = 71 K. The $a$-axis, perpendicular to the chains in the structure, is the magnetic easy axis, while the chain axis direction, along $b$, is the hard axis. Magnetic isotherms measured around $T_c$ do not follow the behavior predicted by simple mean field critical exponents for a second order phase transition. A tentative set of critical exponents is estimated based on a modified Arrott plot analysis, giving $β\sim$0.25, $γ\sim$1.38 and $δ\sim$6.6.

cond-mat.mtrl-sci↗

Anisotropic magnetic properties of the triangular plane lattice material TmMgGaO4

The crystal growth, structure, and basic magnetic properties of TmMgGaO4 are reported. The Tm ions are located in a planar triangular lattice consisting of distorted TmO6 octahedra, while the Mg and Ga atoms randomly occupy intermediary bilayers of M-O triangular bipyramids. The Tm ions are positionally disordered. The material displays an antiferromagnetic Curie Weiss theta of ~ -20 -25 K, with no clear ordering visible in the magnetic susceptibility down to 1.8 K; the structure and magnetic properties suggest that ordering of the magnetic moments is frustrated by both structural disorder and the triangular magnetic motif. Single crystal magnetization measurements indicate that the magnetic properties are highly anisotropic, with large moments measured perpendicular to the triangular planes. At 2 K, a broad step-like feature is seen in the field-dependent magnetization perpendicular to the plane on applied field near 2 Tesla.

cond-mat.mtrl-sci↗

Superconductivity in the Nb-Ru-Ge $σ$-Phase

We show that the previously unreported ternary $σ$-phase material Nb$_{20.4}$Ru$_{5.7}$Ge$_{3.9}$ is a superconductor with a critical temperature of 2.2 K. Temperature-dependent magnetic susceptibility, resistance, and specific heat measurements were used to characterize the superconducting transition. The Sommerfeld constant $γ$ for Nb$_{20.4}$Ru$_{5.7}$Ge$_{3.9}$ is 91 mJ mol-f.u.$^{-1}$K$^{-2}$ and the specific heat anomaly at the superconducting transition, $Δ$C/$γ$T$_c$, is approximately 1.38. The zero-temperature upper critical field ($μ_0$H$_{c2}$(0)) was estimated to be 2 T by resistance data. Field-dependent magnetization data analysis estimated $μ_0$H$_{c1}$(0) to be 5.5 mT. Thus, the characterization shows Nb$_{20.4}$Ru$_{5.7}$Ge$_{3.9}$ to be a type II BCS superconductor. This material appears to be the first reported ternary phase in the Nb-Ru-Ge system, and the fact that there are no previously reported binary Nb-Ru, Nb-Ge, or Ru-Ge $σ$-phases shows that all three elements are necessary to stabilize the material. A $σ$-phase in the Ta-Ru-Ge system was synthesized but did not display superconductivity above 1.7 K, which suggests that electron count cannot govern the superconductivity observed. Preliminary characterization of a possible superconducting $σ$-phase in the Nb-Ru-Ga system is also reported.

cond-mat.supr-con↗