arXiv subjects

Takashi Tanii

Publications and source records attributed to Takashi Tanii.

5 recordsLinked to original sources

arXiv2022

Microfluidic cell engineering on high-density microelectrode arrays for assessing structure-function relationships in living neuronal networks

Neuronal networks in dissociated culture combined with cell engineering technology offer a pivotal platform to constructively explore the relationship between structure and function in living neuronal networks. Here, we fabricated defined neuronal networks possessing a modular architecture on high-density microelectrode arrays (HD-MEAs), a state-of-the-art electrophysiological tool for recording neural activity with high spatial and temporal resolutions. We first established a surface coating protocol using a cell-permissive hydrogel to stably attach polydimethylsiloxane microfluidic film on the HD-MEA. We then recorded the spontaneous neural activity of the engineered neuronal network, which revealed an important portrait of the engineered neuronal network--modular architecture enhances functional complexity by reducing the excessive neural correlation between spatially segregated modules. The results of this study highlight the impact of HD-MEA recordings combined with cell engineering technologies as a novel tool in neuroscience to constructively assess the structure-function relationships in neuronal networks.

q-bio.NC↗

arXiv2021

Position-controlled functionalization of vacancies in silicon by single-ion implanted germanium atoms

Special point defects in semiconductors have been envisioned as suitable components for quantum-information technology. The identification of new deep centers in silicon that can be easily activated and controlled is a main target of the research in the field. Vacancy-related complexes are suitable to provide deep electronic levels but they are hard to control spatially. With the spirit of investigating solid state devices with intentional vacancy-related defects at controlled position, here we report on the functionalization of silicon vacancies by implanting Ge atoms through single-ion implantation, producing Ge-vacancy (GeV) complexes. We investigate the quantum transport through an array of GeV complexes in a silicon-based transistor. By exploiting a model based on an extended Hubbard Hamiltonian derived from ab-initio results we find anomalous activation energy values of the thermally activated conductance of both quasi-localized and delocalized many-body states, compared to conventional dopants. We identify such states, forming the upper Hubbard band, as responsible of the experimental sub-threshold transport across the transistor. The combination of our model with the single-ion implantation method enables future research for the engineering of GeV complexes towards the creation of spatially controllable individual defects in silicon for applications in quantum information technologies.

cond-mat.mtrl-sci↗

arXiv2019

GeVn complexes for silicon-based room-temperature single-atom nanoelectronics

We characterize germanium-vacancy GeVn complexes in silicon using first-principles Density Functional Theory calculations with screening-dependent hybrid functionals. We report on the local geometry and electronic excited states of these defects, including charge transition levels corresponding to the addition of one or more electrons to the defect. Our main theoretical result concerns the GeV complex, which we show to give rise to two excited states deep in the gap, at -0.51 and -0.35 eV from the conduction band, consistently with the available spectroscopic data. The adopted theoretical scheme, suitable to compute a reliable estimate of the wavefunction decay, leads us to predict that such states are associated to an electron localization over a length of about 0.45 nm. By combining the electronic properties of the bare silicon vacancy, carrying deep states in the band gap, with the spatial controllability arising from single Ge ion implantation techniques, the GeVn complex emerges as a suitable ingredient for silicon-based room-temperature single-atom devices.

physics.comp-ph↗

arXiv2017

Control of the Correlation of Spontaneous Neuron Activity in Biological and Noise-activated CMOS Artificial Neural Microcircuits

There are several indications that brain is organized not on a basis of individual unreliable neurons, but on a micro-circuital scale providing Lego blocks employed to create complex architectures. At such an intermediate scale, the firing activity in the microcircuits is governed by collective effects emerging by the background noise soliciting spontaneous firing, the degree of mutual connections between the neurons, and the topology of the connections. We compare spontaneous firing activity of small populations of neurons adhering to an engineered scaffold with simulations of biologically plausible CMOS artificial neuron populations whose spontaneous activity is ignited by tailored background noise. We provide a full set of flexible and low-power consuming silicon blocks including neurons, excitatory and inhibitory synapses, and both white and pink noise generators for spontaneous firing activation. We achieve a comparable degree of correlation of the firing activity of the biological neurons by controlling the kind and the number of connection among the silicon neurons. The correlation between groups of neurons, organized as a ring of four distinct populations connected by the equivalent of interneurons, is triggered more effectively by adding multiple synapses to the connections than increasing the number of independent point-to-point connections. The comparison between the biological and the artificial systems suggests that a considerable number of synapses is active also in biological populations adhering to engineered scaffolds.

cs.NE↗

arXiv2017

Room-temperature 1.54 $μ$m photoluminescence of Er:O$_x$ centers at extremely low concentration in silicon

The demand for single photon sources at $λ~=~1.54~μ$m, which follows from the consistent development of quantum networks based on commercial optical fibers, makes Er:O$_x$ centers in Si still a viable resource thanks to the optical transition of $Er^{3+}~:~^4I_{13/2}~\rightarrow~^4I_{15/2}$. Yet, to date, the implementation of such system remains hindered by its extremely low emission rate. In this Letter, we explore the room-temperature photoluminescence (PL) at the telecomm wavelength of very low implantation doses of $Er:O_x$ in $Si$. The emitted photons, excited by a $λ~=~792~nm$ laser in both large areas and confined dots of diameter down to $5~μ$m, are collected by an inverted confocal microscope. The lower-bound number of detectable emission centers within our diffraction-limited illumination spot is estimated to be down to about 10$^4$, corresponding to an emission rate per individual ion of about $4~\times~10^{3}$ photons/s.

cond-mat.mtrl-sci↗