arXiv subjects

Tangsheng Chen

Publications and source records attributed to Tangsheng Chen.

4 recordsLinked to original sources

arXiv2026

Efficient and broadband quantum frequency comb generation in a monolithic AlGaAs-on-insulator microresonator

The exploration of photonic systems for quantum information processing has generated widespread interest in multiple cutting-edge research fields. Photonic frequency encoding stands out as an especially viable approach, given its natural alignment with established optical communication technologies, including fiber networks and wavelength-division multiplexing systems. Substantial reductions in hardware resources and improvements in quantum performance can be expected by utilizing multiple frequency modes. The integration of nonlinear photonics with microresonators provides a compelling way for generating frequency-correlated photon pairs across discrete spectral modes. Here, by leveraging the high material nonlinearity and low nonlinear loss, we demonstrate an efficient chip-scale multi-wavelength quantum light source based on AlGaAs-on-insulator, featuring a free spectral range of approximately 200 GHz at telecom wavelengths. The optimized submicron waveguide geometry provides both high effective nonlinearity (~550 m$^{-1}$W$^{-1}$) and broad generation bandwidth, producing eleven distinct wavelength pairs across a 35.2 nm bandwidth with an average spectral brightness of 2.64 GHz mW$^{-2}$nm$^{-1}$. The generation of energy-time entanglement for each pair of frequency modes is verified through Franson interferometry, yielding an average net visibility of 93.1%. With its exceptional optical gain and lasing capabilities, the AlGaAs-on-insulator platform developed here shows outstanding potential for realizing fully integrated, ready-to-deploy quantum photonic systems on chip.

quant-ph↗

arXiv2023

Coexistence of multiuser entanglement distribution and classical light in optical fiber network with a semiconductor chip

Building communication links among multiple users in a scalable and robust way is a key objective in achieving large-scale quantum networks. In realistic scenario, noise from the coexisting classical light is inevitable and can ultimately disrupt the entanglement. The previous significant fully connected multiuser entanglement distribution experiments are conducted using dark fiber links and there is no explicit relation between the entanglement degradations induced by classical noise and its error rate. Here we fabricate a semiconductor chip with a high figure-of-merit modal overlap to directly generate broadband polarization entanglement. Our monolithic source maintains polarization entanglement fidelity above 96% for 42 nm bandwidth with a brightness of 1.2*10^7 Hz/mW. We perform a continuously working quantum entanglement distribution among three users coexisting with classical light. Under finite-key analysis, we establish secure keys and enable images encryption as well as quantum secret sharing between users. Our work paves the way for practical multiparty quantum communication with integrated photonic architecture compatible with real-world fiber optical communication network.

quant-ph↗

arXiv2019

Integrating high-quality dielectrics with one-nanometer equivalent oxide thickness on two-dimensional electronic devices

Two-dimensional (2D) semiconductors are widely recognized as attractive channel materials for low-power electronics. However, an unresolved challenge is the integration of high-quality, ultrathin high-\k{appa} dielectrics that fully meet the roadmap requirements for low-power applications. With a dangling-bond free surface, the deposition of dielectrics by atomic layer deposition (ALD) on 2D materials is usually characterized with non-uniform nucleation and island formation, producing a highly porous dielectric layer with serious leakage particularly at the small equivalent oxide thickness (EOT) limit. Here, we report the robust ALD of highly uniform high-\k{appa} dielectric on 2D semiconductors by using ~0.3 nm-thick exclusively monolayer molecular crystal as seeding layer. Ultrathin dielectrics down to 1 nm EOT is realized on graphene, MoS2 and WSe2, with considerably reduced roughness, density of interface states, leakage current and improved breakdown field compared to prior methods. Taking advantage of the reduced EOT, we demonstrate graphene RF transistors operating at 60 GHz, as well as MoS2 and WSe2 complementary metal-oxide-semiconductor (CMOS) transistors with Vdd =0.8 V and ideal subthreshold swing (SS) of 60 mV/dec, 20 nm-channel-length MoS2 transistors with on/off ratio over 10^7. These studies highlight that our dielectric integration method is generally applicable for different 2D materials, and compatible with top-down fabrication process on large-area chemical vapor deposited films.

physics.app-ph↗

arXiv2015

High-Performance Monolayer WS2 Field-effect Transistors on High-k Dielectrics

The combination of high-quality Al2O3 dielectric and thiol chemistry passivation can effectively reduce the density of interface traps and Coulomb impurities of WS2, leading to a significant improvement of the mobility and a transition of the charge transport from the insulating to the metallic regime. A record high mobility of 83 cm2/Vs (337 cm2/Vs) is reached at room temperature (low temperature) for monolayer WS2. A theoretical model for electron transport is also developed.

cond-mat.mtrl-sci↗