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arXiv · 1510.00826

High-Performance Monolayer WS2 Field-effect Transistors on High-k Dielectrics

Yang Cui·Run Xin·Zhihao Yu·Yiming Pan·Zhun-Yong Ong·Xiaoxu Wei·Junzhuan Wang·Haiyan Nan·Zhenhua Ni·Yun Wu·Tangsheng Chen·Yi Shi·Baigeng Wang·Gang Zhang·Yong-Wei Zhang·Xinran Wang
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Abstract

The combination of high-quality Al2O3 dielectric and thiol chemistry passivation can effectively reduce the density of interface traps and Coulomb impurities of WS2, leading to a significant improvement of the mobility and a transition of the charge transport from the insulating to the metallic regime. A record high mobility of 83 cm2/Vs (337 cm2/Vs) is reached at room temperature (low temperature) for monolayer WS2. A theoretical model for electron transport is also developed.

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Yang Cui, Run Xin, Zhihao Yu, Yiming Pan, Zhun-Yong Ong, Xiaoxu Wei, Junzhuan Wang, Haiyan Nan, Zhenhua Ni, Yun Wu, Tangsheng Chen, Yi Shi, Baigeng Wang, Gang Zhang, Yong-Wei Zhang, Xinran Wang. 2015-10-03. High-Performance Monolayer WS2 Field-effect Transistors on High-k Dielectrics. https://doi.org/10.1002/adma.201502222

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