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Thomas Mueller

Publications and source records attributed to Thomas Mueller.

At least 19 recordsLinked to original sources

JWST Observations of Asteroid 2024 YR4 Rule Out a 2032 Lunar Impact and Demonstrate a New Regime for Planetary Defense Follow-up

At the end of its discovery apparition, the $\sim$60 m near-Earth object 2024 YR4 was associated with a non-zero probability of lunar impact during its 2032 December 22 close approach. While posing no threat to Earth, a lunar impact of this scale could have consequences for Earth-orbiting infrastructure, as well as for human exploration on and around the Moon. We present new JWST/NIRCam observations from 2026 February 18 and 26 that extend the observational arc by eight months, reduce the uncertainty in the 2032 lunar encounter by a factor $>$30, and constitute the faintest detection of a near-Earth object to date, reaching $V \sim 30.5$ -- beyond the $V \sim 27$ ground-based limit. The updated orbit solution yields a predicted miss distance of $22{\,}900 \pm 800$ km (1$\sigma$) from the center of the Moon, thus ruling out a lunar impact. Despite challenges due to the limited number of reference stars and saturation and trailing effects, we derive astrometric positions with three independent analysis methods, demonstrating consistency at the $\lesssim$50 mas level. These observations extend the orbital arc at epochs when the object is not accessible from the ground, advancing the timeline for hazard assessment by two years relative to the next feasible ground-based recovery. This capability is critical in an emerging regime of planetary defense characterized by the discovery of decameter-scale objects by next-generation surveys. These objects are far more common but rapidly become inaccessible to ground-based follow-up. In this regime, hazard assessment can become follow-up-limited, requiring targeted space-based observations, such as those demonstrated here, to reliably constrain impact probabilities on operationally relevant timescales.

astro-ph.EP

Modern Minimal Perfect Hashing: A Survey

Given a set $S$ of $n$ keys, a perfect hash function for $S$ maps the keys in $S$ to the first $m \geq n$ integers without collisions. It may return an arbitrary result for any key not in $S$ and is called minimal if $m = n$. The most important parameters are its space consumption, construction time, and query time. Years of research now enable modern perfect hash functions to be extremely fast to query, very space-efficient, and scale to billions of keys. Different approaches give different trade-offs between these aspects. For example, the smallest constructions get within 0.1% of the space lower bound of $\log_2(e)$ bits per key. Others are particularly fast to query, requiring only one memory access. Perfect hashing has many applications, for example to avoid collision resolution in static hash tables, and is used in databases, bioinformatics, and stringology. Since the last comprehensive survey in 1997, significant progress has been made. This survey covers the latest developments and provides a starting point for getting familiar with the topic. Additionally, our extensive experimental evaluation can serve as a guide to select a perfect hash function for use in applications.

cs.DS

3D XY Universality and Nonlinear magnetic susceptibility in a kagome ice compound

Kagome spin ice is an intriguing class of spin systems constituted by in-plane Ising spins with ferromagnetic interaction residing on the kagome lattice, theoretically predicted to host a plethora of magnetic transitions and excitations. In particular, different variants of kagome spin ice models can exhibit different sequences of symmetry breaking upon cooling from the paramagnetic to the fully ordered ground state. Recently, it has been demonstrated that the frustrated intermetallic HoAgGe stands as a faithful solid-state realization of kagome spin ice. Here we use single crystal neutron diffuse scattering to map the spin ordering of HoAgGe at various temperatures more accurately and surprisingly find that the ordering sequence appears to be different from previously known scenarios: From the paramagnetic state, the system first enters a partially ordered state with fluctuating magnetic charges, in contrast to a charge-ordered paramagnetic phase before reaching the fully ordered state. Through state-of-the-art Monte Carlo simulations and scaling analyses using a quasi-2D model for the distorted Kagome spin ice in HoAgGe, we elucidate a single three-dimensional (3D) XY phase transition into the ground state with broken time-reversal symmetry (TRS). However, the 3D XY transition has a long crossover tail before the fluctuating magnetic charges fully order. More interestingly, we find both experimentally and theoretically that the TRS breaking phase of HoAgGe features an unusual, hysteretic response: In spite of their vanishing magnetization, the two time-reversal partners are distinguished and selected by a nonlinear magnetic susceptibility tied to the kagome ice rule. Our discovery not only unveils a new symmetry breaking hierarchy of kagome spin ice, but also demonstrates the potential of TRS-breaking frustrated spin systems for information technology applications.

cond-mat.str-el

Flat band-engineered spin-density wave and the emergent multi-$k$ magnetic state in the topological kagome metal Mn$_{3}$Sn

Magnetic kagome metals, in which topologically non-trivial band structures and electronic correlation are intertwined, have recently emerged as an exciting platform to explore exotic correlated topological phases, that are usually not found in weakly interacting materials described within the semi-classical picture of electrons. Here, via a comprehensive single-crystal neutron diffraction and first-principles density functional theory study of the archetypical topological kagome metal Mn$_3$Sn, which is also a magnetic Weyl fermion material and a promising chiral magnet for antiferromagnetic spintronics, we report the realisation of an emergent spin-density wave (SDW) order, a hallmark correlated many-body phenomenon, that is engineered by the Fermi surface nesting of topological flat bands. We further reveal that the phase transition, from the well-known high-temperature coplanar and non-collinear k = 0 inverse triangular antiferromagnetic order to a double-$k$ non-coplanar modulated incommensurate magnetic structure below $T_1$ = 280 K, is primarily driven by the SDW instability. The double-$k$ nature of this complex low-temperature magnetic order, which can be regarded as an intriguing superposition of a longitudinal SDW with a modulation wavevector k$_L$ and a transverse incommensurate helical magnetic order with a modulation wavevector k$_T$, is unambiguously confirmed by our observation of the inter-modulation high-order harmonics of the type of 2k$_L$+k$_T$. This discovery not only solves a long-standing puzzle concerning the nature of the phase transition at $T_1$, but also provides an extraordinary example on the intrinsic engineering of correlated many-body phenomena in topological matter. The identified multi-$k$ magnetic state can be further exploited for the engineering of the new modes of magnetization and chirality switching in antiferromagnetic spintronics.

cond-mat.str-el

Hydrostatic pressure effects in the Kitaev quantum magnet $\alpha$-RuCl$_3$: A single-crystal neutron diffraction study

We report a comprehensive single-crystal neutron diffraction investigation of the Kitaev quantum magnet $\alpha$-RuCl$_{3}$ under hydrostatic pressure. Utilizing a He-gas pressure cell, we successfully applied an ideal hydrostatic pressure in situ at low temperatures, which allows to effectively eliminate any possible influences from the structural transition occurring between 200 K and 50 K under ambient conditions. Our experiments reveal a gradual suppression of the ziagzag antiferromagnetic order as hydrostatic pressure increases. Furthermore, a reversible pressure-induced structural transition occurs at a critical pressure of $P_d$ = 0.15 GPa at 30 K, as evidenced by the absence of magnetic order and non-uniform changes in lattice constants. The decrease in magnetic transition temperature is discussed in relation to a pressure-induced change in the trigonal distortion of the Ru-Cl octahedra in this compound. Our findings emphasize the significance of the trigonal distortion in Kitaev materials, and provide a new perspective on the role of hydrostatic pressures in the realization of the Kitaev quantum spin liquid state in $\alpha$-RuCl$_{3}$.

cond-mat.str-el

Optically transparent and thermally efficient 2D MoS2 heaters integrated with silicon microring resonators

Thermal tuning of the optical refractive index in the waveguides to control light phase accumulation is essential in photonic integrated systems and applications. In silicon photonics, microheaters are mainly realized by metal wires or highly doped silicon lines placed at a safe distance (1um) from the waveguide to avoid considerable optical loss. However, this poses a significant limitation for heating efficiency because of the excessive free-carrier loss when a heater is brought closer to the optical path. In this work, we present a new concept of using optically transparent 2D semiconductors (e.g. MoS2) for realizing highly efficient waveguide integrated heaters operating at telecom wavelengths. We demonstrate that a single-layer MoS2 heater with negligible optical absorption in the infrared can be placed in close proximity (only 30nm) to the waveguide and show the best-reported heating efficiency of 15 mW per FSR without sacrificing the optical insertion loss. The heater response time is 25us, limited by Au 1L-MoS2 Schottky contact. Both the efficiency and response time can be further significantly improved by realizing 2D MoS2 heaters with ohmic contacts. Our work shows clear advantages of employing 2D semiconductors for heaters applications and paves the way for developing novel energy-efficient, lossless 2D heaters for on-chip photonic integrated circuits.

physics.optics

X-ray performance of critical-angle transmission grating prototypes for the Arcus mission

Arcus is a proposed soft x-ray grating spectrometer Explorer. It aims to explore cosmic feedback by mapping hot gases within and between galaxies and galaxy clusters and characterizing jets and winds from supermassive black holes, and to investigate the dynamics of protoplanetary discs and stellar accretion. Arcus features 12 m-focal-length grazing-incidence silicon pore optics (SPO) developed for the Athena mission. Critical-angle transmission (CAT) gratings efficiently disperse high diffraction orders onto CCDs. We report new and improved x-ray performance results for Arcus-like CAT gratings, including record resolving power for two co-aligned CAT gratings. Multiple Arcus prototype grating facets were illuminated by an SPO at the PANTER facility. The facets consist of $32\times32.5$ mm$^2$ patterned silicon membranes, bonded to metal frames. The bonding angle is adjusted according to the measured average tilt angle of the grating bars in the membrane. Two simultaneously illuminated facets show minor broadening of the Al-K$_{\alpha}$ doublet in 18$^{\rm th}$ and 21$^{\rm st}$ orders with a best fit record effective resolving power of $R_G \approx 1.3^{+\infty}_{-0.5}\times10^4$ ($3\sigma$), about 3-4 times the Arcus requirement. We measured the diffraction efficiency of quasi-fully illuminated gratings at O-K wavelengths in orders 4-7 in an Arcus-like configuration and compare results with synchrotron spot measurements. After corrections for geometrical effects and bremsstrahlung continuum we find agreement between full and spot illumination at the two different facilities, as well as with the models used for Arcus effective area predictions. We find that these flight-like gratings meet diffraction efficiency and greatly exceed resolving power Arcus requirements.

astro-ph.IM

A photosensor employing data-driven binning for ultrafast image recognition

Pixel binning is a technique, widely used in optical image acquisition and spectroscopy, in which adjacent detector elements of an image sensor are combined into larger pixels. This reduces the amount of data to be processed as well as the impact of noise, but comes at the cost of a loss of information. Here, we push the concept of binning to its limit by combining a large fraction of the sensor elements into a single superpixel that extends over the whole face of the chip. For a given pattern recognition task, its optimal shape is determined from training data using a machine learning algorithm. We demonstrate the classification of optically projected images from the MNIST dataset on a nanosecond timescale, with enhanced sensitivity and without loss of classification accuracy. Our concept is not limited to imaging alone but can also be applied in optical spectroscopy or other sensing applications.

cs.CV

Sparse pixel image sensor

As conventional frame-based cameras suffer from high energy consumption and latency, several new types of image sensors have been devised, with some of them exploiting the sparsity of natural images in some transform domains. Instead of sampling the full image, those devices capture only the coefficients of the most relevant spatial frequencies. The number of samples can be even sparser if a signal only needs to be classified rather than being fully reconstructed. Based on this mathematical framework, we developed an image sensor that can be trained to classify optically projected images by reading out the few most relevant pixels. The device is based on a two-dimensional array of metal-semiconductor-metal photodetectors with individually tunable photoresponsivity values. We demonstrate its use for the classification of handwritten digits with an accuracy comparable to that of conventional systems, but with lower delay and energy consumption.

physics.app-ph

Topological magnon insulators in two-dimensional van der Waals ferromagnets CrSiTe$_3$ and CrGeTe$_3$: towards intrinsic gap-tunability

The bosonic analogues of topological insulators have been proposed in numerous theoretical works, but their experimental realization is still very rare, especially for spin systems. Recently, two-dimensional (2D) honeycomb van der Waals (vdW) ferromagnets have emerged as a new platform for topological spin excitations. Here, via a comprehensive inelastic neutron scattering study and theoretical analysis of the spin-wave excitations, we report the realization of topological magnon insulators in CrXTe$_3$ (X=Si, Ge) compounds. The nontrivial nature and intrinsic tunability of the gap opening at the magnon band-crossing Dirac points are confirmed, while the emergence of the corresponding in-gap topological edge states is demonstrated theoretically. The realization of topological magnon insulators with intrinsic gap-tunability in this class of remarkable 2D materials will undoubtedly lead to new and fascinating technological applications in the domain of magnonics and topological spintronics.

cond-mat.str-el

High-responsivity graphene photodetectors integrated on silicon microring resonators

Graphene integrated photonics provides several advantages over conventional Si photonics. Single layer graphene (SLG) enables fast, broadband, and energy-efficient electro-optic modulators, optical switches and photodetectors (GPDs), and is compatible with any optical waveguide. The last major barrier to SLG-based optical receivers lies in the low responsivity - electrical output per optical input - of GPDs compared to conventional PDs. Here we overcome this shortfall by integrating a photo-thermoelectric GPD with a Si microring resonator. Under critical coupling, we achieve $>$90% light absorption in a $\sim$6 $\mu$m SLG channel along the Si waveguide. Exploiting the cavity-enhanced light-matter interaction, causing carriers in SLG to reach $\sim$400 K for an input power of $\sim$0.6 mW, we get a voltage responsivity $\sim$90 V/W, demonstrating the feasibility of our approach. Our device is capable of detecting data rates up to 20 Gbit/s, with a receiver sensitivity enabling it to operate at a 10$^{-9}$ bit-error rate, on par with mature semiconductor technology. The natural generation of a voltage rather than a current, removes the need for transimpedance amplification, with a reduction of the energy-per-bit cost and foot-print, when compared to a traditional semiconductor-based receiver.

physics.app-ph

Magnetic structures, spin-flop transition and coupling of Eu and Mn magnetism in the Dirac semimetal EuMnBi$_2$

We report here a comprehensive study of the AFM structures of the Eu and Mn magnetic sublattices as well as the interplay between Eu and Mn magnetism in this compound by using both polarized and non-polarized single-crystal neutron diffraction. Magnetic susceptibility, specific heat capacity measurements and the temperature dependence of magnetic diffractions suggest that the AFM ordering temperature of the Eu and Mn moments is at 22 and 337 K, respectively. The magnetic moments of both Eu and Mn ions are oriented along the crystallographic $c$ axis, and the respective magnetic propagation vector is $\textbf{k}_{Eu} = (0,0,1)$ and $\textbf{k}_{Mn}=(0,0,0)$. With proper neutron absorption correction, the ordered moments are refined at 3 K as 7.7(1) $\mu_B$ and 4.1(1) $\mu_B$ for the Eu and Mn ions, respectively. In addition, a spin-flop (SF) phase transition of the Eu moments in an applied magnetic field along the $c$ axis was confirmed to take place at a critical field of B$_c$ $\sim$ 5.3 T. The evolution of the Eu magnetic moment direction as a function of the applied magnetic field in the SF phase was also determined. Clear kinks in both field and temperature dependence of the magnetic reflections ($\pm1$, 0, 1) of Mn were observed at the onset of the SF phase transition and the AFM order of the Eu moments, respectively. This unambiguously indicates the existence of a strong coupling between Eu and Mn magnetism. The interplay between two magnetic sublattices could bring new possibilities to tune Dirac fermions via changing magnetic structures by applied fields in this class of magnetic topological semimetals.

cond-mat.str-el

Low-voltage 2D materials-based printed field-effect transistors for integrated digital and analog electronics on paper

Paper is the ideal substrate for the development of flexible and environmentally sustainable ubiquitous electronic systems, which, combined with two-dimensional materials, could be exploited in many Internet-of-Things applications, ranging from wearable electronics to smart packaging. Here we report high-performance MoS2 field-effect transistors on paper fabricated with a channel-array approach, combining the advantages of two large-area techniques: chemical vapor deposition and inkjet-printing.The first allows the pre-deposition of a pattern of MoS2; the second, the printing of dielectric layers, contacts, and connections to complete transistors and circuits fabrication. Average ION/IOFF of 8 x 10^3 (up to 5 x 10^4) and mobility of 5.5 cm2 V-1 s-1 (up to 26 cm2 V-1 s-1) are obtained. Fully functional integrated circuits of digital and analog building blocks, such as logic gates and current mirrors, are demonstrated, highlighting the potential of this approach for ubiquitous electronics on paper.

physics.app-ph

Analogue two-dimensional semiconductor electronics

While digital electronics has become entirely ubiquitous in today's world and appears in the limelight, analogue electronics is still playing a crucial role in many devices and applications. Current analogue circuits are mostly manufactured using silicon as active material, but the ever present demand for improved performance, new devices and flexible integration has - similar to their digital counterparts - pushed for research into alternative materials. In recent years two-dimensional materials have received considerable research interest, fitting their promising properties for future electronics. In this work we demonstrate an operational amplifier - a basic building block of analogue electronics - using a two-dimensional semiconductor, namely molybdenum disulfide, as active material. Our device is capable of stable operation with good performance, and we demonstrate its use in feedback circuits such as inverting amplifiers, integrators, log amplifiers, and transimpedance amplifiers.

physics.app-ph

Real-time image processing with a 2D semiconductor neural network vision sensor

In recent years, machine vision has taken huge leaps and is now becoming an integral part of various intelligent systems, including autonomous vehicles, robotics, and many others. Usually, visual information is captured by a frame-based camera, converted into a digital format, and processed afterwards using a machine learning algorithm such as an artificial neural network (ANN). A large amount of (mostly redundant) data being passed through the entire signal chain, however, results in low frame rates and large power consumption. Various visual data preprocessing techniques have thus been developed that allow to increase the efficiency of the subsequent signal processing in an ANN. Here, we demonstrate that an image sensor itself can constitute an ANN that is able to simultaneously sense and process optical images without latency. Our device is based on a reconfigurable two-dimensional (2D) semiconductor photodiode array, with the synaptic weights of the network being stored in a continuously tunable photoresponsivity matrix. We demonstrate both supervised and unsupervised learning and successfully train the sensor to classify and encode images, that are optically projected onto the chip, with a throughput of 20 million bins per second.

physics.app-ph

Thermal light emission from monolayer MoS2

Because of their strong excitonic photoluminescence (PL) and electroluminescence (EL), together with an excellent electronic tunability, transition metal dichalcogenide (TMD) semiconductors are promising candidates for novel optoelectronic devices. In recent years, several concepts for light emission from two-dimensional (2D) materials have been demonstrated. Most of these concepts are based on the recombination of electrons and holes in a pn-junction, either along the lateral direction using split-gate geometries in combination with monolayer TMDs, or by precisely stacking different 2D semiconductors on top of each other, in order to fabricate vertical van der Waals heterostructures, working as light-emitting diodes (LEDs). Further, EL was also observed along the channel of ionic liquid gated field-effect transistors (FETs) under ambipolar carrier injection. Another mechanism, which has been studied extensively in carbon nanotubes (CNTs) and more recently also in graphene, is thermal light emission as a result of Joule heating. Although the resulting efficiencies are smaller than that of LEDs based on ambipolar electron-hole injection, these experiments provide valuable insights into microscopic processes, such as electron-phonon and phonon-phonon interactions, and the behavior of low-dimensional materials under strong bias in general.

cond-mat.mes-hall

Graphene photodetector integrated on a photonic crystal defect waveguide

We present a graphene photodetector for telecom applications based on a silicon photonic crystal defect waveguide. The photonic structure is used to confine the propagating light in a narrow region in the graphene layer to enhance light-matter interaction. Additionally, it is utilized as split-gate electrode to create a pn-junction in the vicinity of the optical absorption region. The photonic crystal defect waveguide allows for optimal photo-thermoelectric conversion of the occurring temperature profile in graphene into a photovoltage due to additional silicon slabs on both sides of the waveguide, enhancing the device response as compared to a conventional slot waveguide design. A photoresponsivity of 4.7 V/W and a (setup-limited) electrical bandwidth of 18 GHz are achieved. Under a moderate bias of 0.4 V we obtain a photoconductive responsivity of 0.17 A/W.

physics.app-ph

Optical imaging of strain in two-dimensional crystals

Strain engineering is widely used in material science to tune the (opto-)electronic properties of materials and enhance the performance of devices. Two-dimensional atomic crystals are a versatile playground to study the influence of strain, as they can sustain very large deformations without breaking. Various optical techniques have been employed to probe strain in two-dimensional materials, including micro-Raman and photoluminescence spectroscopy. Here we demonstrate that optical second harmonic generation constitutes an even more powerful technique, as it allows to extract the full strain tensor with a spatial resolution below the optical diffraction limit. Our method is based on the strain-induced modification of the nonlinear susceptibility tensor due to a photoelastic effect. Using a two-point bending technique, we determine the photoelastic tensor elements of molybdenum disulfide. Once identified, these parameters allow us to spatially image the two-dimensional strain field in an inhomogeneously strained sample.

cond-mat.mes-hall