arXiv subjects

Thomas Mussenbrock

Publications and source records attributed to Thomas Mussenbrock.

At least 55 records · Page 3Linked to original sources

arXiv2017

Resistive Switching in Memristive Electrochemical Metallization Devices

We report on resistive switching of memristive electrochemical metallization devices using 3D kinetic Monte Carlo simulations describing the transport of ions through a solid state electrolyte of an Ag/TiO$_{\text{x}}$/Pt thin layer system. The ion transport model is consistently coupled with solvers for the electric field and thermal diffusion. We show that the model is able to describe not only the formation of conducting filaments but also its dissolution. Furthermore, we calculate realistic current-voltage characteristics and resistive switching kinetics. Finally, we discuss in detail the influence of both the electric field and the local heat on the switching processes of the device.

cond-mat.mtrl-sci↗

arXiv2017

In depth nano spectroscopic analysis on homogeneously switching double barrier memristive devices

Memristors based on a double barrier design have been analysed by various nano spectroscopic methods to unveil details about its microstructure and conduction mechanism. The device consists of an AlOx tunnel barrier and a NbOy/Au Schottky barrier sandwiched between Nb bottom electrode and Au top electrode. As it was anticipated that the local chemical composition of the tunnel barrier, i.e. oxidation state of the metals as well as concentration and distribution of oxygen ions, have a major influence on electronic conduction, these factors were carefully analysed. A combined approach was chosen in order to reliably investigate electronic states of Nb and O by electron energy-loss spectroscopy as well as map elements whose transition edges exhibit a different energy range by energy-dispersive X-ray spectroscopy like Au and Al. The results conclusively demonstrate significant oxidation of the bottom electrode as well as a small oxygen vacancy concentration in the Al oxide tunnel barrier. Possible scenarios to explain this unexpected additional oxide layer are discussed and kinetic Monte Carlo simulations were applied in order to identify its influence on conduction mechanisms in the device. In light of the strong deviations between observed and originally sought layout, this study highlights the robustness in terms of structural deviations of the double barrier memristor device.

cond-mat.mtrl-sci↗

arXiv2017

An Enhanced Lumped Element Electrical Model of a Double Barrier Memristive Device

The massive parallel approach of neuromorphic circuits leads to effective methods for solving complex problems. It has turned out that resistive switching devices with a continuous resistance range are potential candidates for such applications. These devices are memristive systems - nonlinear resistors with memory. They are fabricated in nanotechnology and hence parameter spread during fabrication may aggravate reproducible analyses. This issue makes simulation models of memristive devices worthwhile. Kinetic Monte-Carlo simulations based on a distributed model of the device can be used to understand the underlying physical and chemical phenomena. However, such simulations are very time-consuming and neither convenient for investigations of whole circuits nor for real-time applications, e.g. emulation purposes. Instead, a concentrated model of the device can be used for both fast simulations and real-time applications, respectively. We introduce an enhanced electrical model of a valence change mechanism (VCM) based double barrier memristive device (DBMD) with a continuous resistance range. This device consists of an ultra-thin memristive layer sandwiched between a tunnel barrier and a Schottky-contact. The introduced model leads to very fast simulations by using usual circuit simulation tools while maintaining physically meaningful parameters. Kinetic Monte-Carlo simulations based on a distributed model and experimental data have been utilized as references to verify the concentrated model.

cs.ET↗

arXiv2016

Kinetic analysis of negative power deposition in low pressure plasmas

The negative power absorption in low pressure plasmas is investigated by means of an analyical model which couples Boltzmann's equation and the quasi-stationary Maxwell's equation. Exploiting standard Hilbert space methods an explicit solution for both, the electric field and the distribution function of the electrons for a bounded discharge configuration subject to an unsymmetrical excitation has been found for the first time. The model is applied to a low pressure inductively coupled plasma discharge. In this context particularly the anomalous skin effect and the effect of phase mixing is discussed. The analytical solution is compared with results from electromagnetic full wave particle in cell simulations. Excellent agreement between the analytical and the numerical results is found.

physics.plasm-ph↗

arXiv2016

Particle-in-Cell/Test-Particle Simulations of Technological Plasmas: Sputtering Transport in Capacitive Radio Frequency Discharges

The paper provides a tutorial to the conceptual layout of a self-consistently coupled Particle-In-Cell/Test-Particle model for the kinetic simulation of sputtering transport in capacitively coupled plasmas at low gas pressures. It explains when a kinetic approach is actually needed and which numerical concepts allow for the inherent nonequilibrium behavior of the charged and neutral particles. At the example of a generic sputtering discharge both the fundamentals of the applied Monte Carlo methods as well as the conceptual details in the context of the sputtering scenario are elaborated on. Finally, two in the context of sputtering transport simulations often exploited assumptions, namely on the energy distribution of impinging ions as well as on the test particle approach, are validated for the proposed example discharge.

physics.plasm-ph↗

arXiv2016

The role of ion transport phenomena in memristive double barrier devices

In this work we report on the role of ion transport for the dynamic behavior of a double barrier quantum mechanical Al/Al$_2$O$_3$/Nb$_{\text{x}}$O$_{\text{y}}$/Au memristive device based on numerical simulations in conjunction with experimental measurements. The device consists of an ultra-thin Nb$_{\text{x}}$O$_{\text{y}}$ solid state electrolyte between an Al$_2$O$_3$ tunnel barrier and a semiconductor metal interface at an Au electrode. It is shown that the device provides a number of interesting features for potential applications such as an intrinsic current compliance, a relatively long retention time, and no need for an initialization step. Therefore, it is particularly attractive for applications in highly dense random access memories or neuromorphic mixed signal circuits. However, the underlying physical mechanisms of the resistive switching are still not completely understood yet. To investigate the interplay between the current transport mechanisms and the inner atomistic device structure a lumped element circuit model is consistently coupled with 3D kinetic Monte Carlo model for the ion transport. The simulation results indicate that the drift of charged point defects within the Nb$_{\text{x}}$O$_{\text{y}}$ is the key factor for the resistive switching behavior. It is shown in detail that the diffusion of oxygen modifies the local electronic interface states resulting in a change of the interface properties of the double barrier device.

cond-mat.mtrl-sci↗

arXiv2015

Kinetic Simulation of Filament Growth Dynamics in Memristive Electrochemical Metallization Devices

In this work we report on kinetic Monte-Carlo calculations of resistive switching and the underlying growth dynamics of filaments in an electrochemical metallization device consisting of an Ag/TiO2/Pt sandwich-like thin film system. The developed model is not limited to i) fast time scale dynamics and ii) only one growth and dissolution cycle of metallic filaments. In particular, we present results from the simulation of consecutive cycles. We find that the numerical results are in excellent agreement with experimentally obtained data. Additionally, we observe an unexpected filament growth mode which is in contradiction to the widely acknowledged picture of filament growth, but consistent with recent experimental findings.

cond-mat.mtrl-sci↗

arXiv2015

A New Hybrid Scheme for Simulations of Highly Collisional RF-Driven Plasmas

This work describes a new 1D hybrid approach for modeling atmospheric pressure discharges featuring complex chemistry. In this approach electrons are described fully kinetically using Particle-In-Cell/Monte-Carlo (PIC/MCC) scheme, whereas the heavy species are modeled within a fluid description. Validity of the popular drift-diffusion approximation is verified against a "full" fluid model accounting for the ion inertia and a fully kinetic PIC/MCC code for ions as well as electrons. The fluid models require knowledge of the momentum exchange frequency and dependence of the ion mobilities on the electric field when the ions are in equilibrium with the latter. To this end an auxiliary Monte-Carlo scheme is constructed. It is demonstrated that the drift-diffusion approximation can overestimate ion transport in simulations of RF-driven discharges with heavy ion species operated in the $γ$ mode at the atmospheric pressure or in all discharge simulations for lower pressures. This can lead to exaggerated plasma densities and incorrect profiles provided by the drift-diffusion models. Therefore, the hybrid code version featuring the full ion fluid model should be favored against the more popular drfit-diffusion model, noting that the suggested numerical scheme for the former model implies only a small additional computational cost.

physics.plasm-ph↗

arXiv2015

Transport of Sputtered Particles in Capacitive Sputter Sources

The transport of sputtered aluminum inside a multi frequency capacitively coupled plasma chamber is simulated by means of a kinetic test multi-particle approach. A novel consistent set of scattering parameters obtained for a modified variable hard sphere collision model is presented for both argon and aluminum. An angular dependent Thompson energy distribution is fitted to results from Monte Carlo simulations and used for the kinetic simulation of the transport of sputtered aluminum. For the proposed configuration the transport of sputtered particles is characterized under typical process conditions at a gas pressure of p=0.5 Pa. It is found that -- due to the peculiar geometric conditions -- the transport can be understood in a one dimensional picture, governed by the interaction of the imposed and backscattered particle fluxes. It is shown that the precise geometric features play an important role only in proximity to the electrode edges, where the effect of backscattering from the outside chamber volume becomes the governing mechanism.

physics.plasm-ph↗

arXiv2015

Analytic model of the energy distribution function for highly energetic electrons in magnetron plasmas

This paper analyzes a situation which is common for magnetized technical plasmas such as dc magnetron discharges and HiPIMS systems, where secondary electrons enter the plasma after being accelerated in the cathode fall and encounter a nearly uniform bulk. An analytic calculation of the distribution function of hot electrons is presented; these are described as an initially monoenergetic beam that slows down by Coulomb collisions with a Maxwellian distribution of bulk (cold) electrons, and by inelastic collisions with neutrals. Although this analytical solution is based on a steady-state assumption, a comparison of the characteristic time-scales suggests that it may be applicable to a variety of practical time-dependent discharges, and it may be used to introduce kinetic effects into models based on the hypothesis of Maxwellian electrons. The results are verified for parameters appropriate to HiPIMS discharges, by means of time-dependent and fully-kinetic numerical calculations.

physics.plasm-ph↗

arXiv2014

Continuum and Kinetic Simulations of the Neutral Gas Flow in an Industrial Physical Vapor Deposition Reactor

Magnetron sputtering used for physical vapor deposition processes often requires gas pressures well below 1 Pa. Under these conditions the gas flow in the reactor is usually determined by a Knudsen number of about one, i.e., a transition regime between the hydrodynamic and the rarefied gas regime. In the first, the gas flow is well described by the Navier-Stokes equations, while in the second a kinetic approach via the Boltzmann equation is necessary. In this paper the neutral gas flow of argon and molecular nitrogen gas inside an industrial scale plasma reactor was simulated using both a fluid model and a fully kinetic Direct Simulation Monte Carlo model. By comparing both model results the validity of the fluid model was checked. Although in both models a Maxwell-Boltzmann energy distribution of the neutral particles is the natural outcome, the results of the gas flow differ significantly. The fluid model description breaks down, due to the inappropriate assumption of a fluid continuum. This is due to exclusion of non-local effects in the multi dimensional velocity space, as well as invalid gas/wall interactions. Only the kinetic model is able to provide an accurate physical description of the gas flow in the transition regime. Our analysis is completed with a brief investigation of different definitions of the local Knudsen number. We conclude that the most decisive parameter - the spatial length scale L - has to be very careful chosen in order to obtain a reasonable estimate of the gas flow regime.

physics.comp-ph↗

arXiv2014

Ion energy distribution functions behind the sheaths of magnetized and non magnetized radio frequency discharges

The effect of a magnetic field on the characteristics of capacitively coupled radio frequency discharges is investigated and found to be substantial. A one-dimensional particle-in-cell simulation shows that geometrically symmetric discharges can be asymmetrized by applying a spatially inhomogeneous magnetic field. This effect is similar to the recently discovered electrical asymmetry effect. Both effects act independently, they can work in the same direction or compensate each other. Also the ion energy distribution functions at the electrodes are strongly affected by the magnetic field, although only indirectly. The field influences not the dynamics of the sheath itself but rather its operating conditions, i.e., the ion flux through it and voltage drop across it. To support this interpretation, the particle-in-cell results are compared with the outcome of the recently proposed ensemble-in-spacetime algorithm. Although that scheme resolves only the sheath and neglects magnetization, it is able to reproduce the ion energy distribution functions with very good accuracy, regardless of whether the discharge is magnetized or not.

physics.plasm-ph↗

arXiv2013

Active plasma resonance spectroscopy: A functional analytic description

The term "Active Plasma Resonance Spectroscopy" refers to a class of diagnostic methods which employ the ability of plasmas to resonate on or near the plasma frequency. The basic idea dates back to the early days of discharge physics: An signal in the GHz range is coupled to the plasma via an electrical probe; the spectral response is recorded, and then evaluated with a mathematical model to obtain information on the electron density and other plasma parameters. In recent years, the concept has found renewed interest as a basis of industry compatible plasma diagnostics. This paper analyzes the diagnostics technique in terms of a general description based on functional analytic (or Hilbert Space) methods which hold for arbitrary probe geometries. It is shown that the response function of the plasma-probe system can be expressed as a matrix element of the resolvent of an appropriately defined dynamical operator. A specialization of the formalism for a symmetric probe desing is given, as well as an interpreation in terms of a lumped circuit model consisting of series resonators. We present ideas for an optimized probe design based on geometric and electrical symmetry.

physics.plasm-ph↗

arXiv2012

Simulations of electromagnetic effects in high frequency capacitively coupled discharges using the Darwin approximation

The Darwin approximation is investigated for its possible use in simulation of electromagnetic effects in large size, high frequency capacitively coupled discharges. The approximation is utilized within the framework of two different fluid models which are applied to typical cases showing pronounced standing wave and skin effects. With the first model it is demonstrated that Darwin approximation is valid for treatment of such effects in the range of parameters under consideration. The second approach, a reduced nonlinear Darwin approximation-based model, shows that the electromagnetic phenomena persist in a more realistic setting. The Darwin approximation offers a simple and efficient way of carrying out electromagnetic simulations as it removes the Courant condition plaguing explicit electromagnetic algorithms and can be implemented as a straightforward modification of electrostatic algorithms. The algorithm described here avoids iterative schemes needed for the divergence cleaning and represents a fast and efficient solver, which can be used in fluid and kinetic models for self-consistent description of technical plasmas exhibiting certain electromagnetic activity.

physics.plasm-ph↗

arXiv2011

Self-pulsing of a micro thin cathode discharge

Microplasmas operated at atmospheric pressure show a number of peculiar dynamic phenomena. One of these phenomena is self-pulsing, which is characterized by intrinsic pulsing behavior of a DC driven plasma discharge. This work focuses on the numerical simulation of self-pulsing in a micro thin cathode discharge operated in atmospheric pressure argon. By means of a hybrid plasma model we show self-pulsing of the discharge in the expected MHz frequency range and described its actual origin.

physics.plasm-ph↗

arXiv2011

Modeling and simulation of ion energy distribution functions in technological plasmas

The highly advanced treatment of surfaces as etching and deposition is mainly enabled by the extraordinary properties of technological plasmas. The primary factors that influence these processes are the flux and the energy of various species, particularly ions, that impinge the substrate surface. These features can be theoretically described using the ion energy distribution function (IEDF). The article is intended to summarize the fundamental concepts of modeling and simulation of IEDFs from simplified models to self-consistent plasma simulations. Finally, concepts for controlling the IEDF are discussed.

physics.plasm-ph↗

arXiv2011

Ionization wave propagation on a micro cavity plasma array

Microcavity plasma arrays of inverse pyramidal cavities have been fabricated in p-Si wafers. Each cavity acts as a microscopic dielectric barrier discharge. Operated at atmospheric pressure in argon and excited with high voltage at about 10 kHz, each cavity develops a localized microplasma. Experiments have shown a strong interaction of individual cavities, leading to the propagation of wave-like optical emission structures along the surface of the array. This phenomenon is numerically investigated using computer simulation. The observed ionization wave propagates with a speed of about 5 km/s, which agrees well the experimental findings. It is found that the wave propagation is due to sequential contributions of a drift of electrons followed by drift of ions between cavities seeded by photoemission of electrons by the plasma in adjacent cavities.

physics.plasm-ph↗

arXiv2011

Numerical study of secondary electron emission in a coaxial radio-frequency driven plasma jet at atmospheric pressure

In this work we investigate a numerical model of a coaxial RF-driven plasma jet operated at atmospheric pressure. Due to the cylindrical symmetry an adequate 2-D representation of the otherwise 3-dimensional structure is used. A helium-oxygen chemistry reaction scheme is applied. We study the effect of secondary electrons emitted at the inner electrode as well as the inserted dielectric tube and discuss their impact on the discharge behavior. We conclude that a proper choice of materials can improve the desired mode of operation of such plasma jets in terms of materials and surface processing.

physics.plasm-ph↗