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Tianyi Han

Publications and source records attributed to Tianyi Han.

At least 19 recordsLinked to original sources

OAG-Bench: A Human-Curated Benchmark for Academic Graph Mining

With the rapid proliferation of scientific literature, versatile academic knowledge services increasingly rely on comprehensive academic graph mining. Despite the availability of public academic graphs, benchmarks, and datasets, these resources often fall short in multi-aspect and fine-grained annotations, are constrained to specific task types and domains, or lack underlying real academic graphs. In this paper, we present OAG-Bench, a comprehensive, multi-aspect, and fine-grained human-curated benchmark based on the Open Academic Graph (OAG). OAG-Bench covers 10 tasks, 20 datasets, 70+ baselines, and 120+ experimental results to date. We propose new data annotation strategies for certain tasks and offer a suite of data pre-processing codes, algorithm implementations, and standardized evaluation protocols to facilitate academic graph mining. Extensive experiments reveal that even advanced algorithms like large language models (LLMs) encounter difficulties in addressing key challenges in certain tasks, such as paper source tracing and scholar profiling. We also introduce the Open Academic Graph Challenge (OAG-Challenge) to encourage community input and sharing. We envisage that OAG-Bench can serve as a common ground for the community to evaluate and compare algorithms in academic graph mining, thereby accelerating algorithm development and advancement in this field. OAG-Bench is accessible at https://www.aminer.cn/data/.

cs.DL

Scalable Acceleration for Classification-Based Derivative-Free Optimization

Derivative-free optimization algorithms play an important role in scientific and engineering design optimization problems, especially when derivative information is not accessible. In this paper, we study the framework of sequential classification-based derivative-free optimization algorithms. By introducing learning theoretic concept hypothesis-target shattering rate, we revisit the computational complexity upper bound of SRACOS (Hu, Qian, and Yu 2017). Inspired by the revisited upper bound, we propose an algorithm named RACE-CARS, which adds a random region-shrinking step compared with SRACOS. We further establish theorems showing the acceleration by region shrinking. Experiments on the synthetic functions as well as black-box tuning for language-model-as-a-service demonstrate empirically the efficiency of RACE-CARS. An ablation experiment on the introduced hyperparameters is also conducted, revealing the mechanism of RACE-CARS and putting forward an empirical hyper-parameter tuning guidance.

cs.LG

Orbital Multiferroicity in Pentalayer Rhombohedral Graphene

Ferroic orders describe spontaneous polarization of spin, charge, and lattice degrees of freedom in materials. Materials featuring multiple ferroic orders, known as multiferroics, play important roles in multi-functional electrical and magnetic device applications. 2D materials with honeycomb lattices offer exciting opportunities to engineer unconventional multiferroicity, where the ferroic orders are driven purely by the orbital degrees of freedom but not electron spin. These include ferro-valleytricity corresponding to the electron valley and ferro-orbital-magnetism supported by quantum geometric effects. Such orbital multiferroics could offer strong valley-magnetic couplings and large responses to external fields-enabling device applications such as multiple-state memory elements, and electric control of valley and magnetic states. Here we report orbital multiferroicity in pentalayer rhombohedral graphene using low temperature magneto-transport measurements. We observed anomalous Hall signals Rxy with an exceptionally large Hall angle (tan{\Theta}H > 0.6) and orbital magnetic hysteresis at hole doping. There are four such states with different valley polarizations and orbital magnetizations, forming a valley-magnetic quartet. By sweeping the gate electric field E we observed a butterfly-shaped hysteresis of Rxy connecting the quartet. This hysteresis indicates a ferro-valleytronic order that couples to the composite field E\cdot B, but not the individual fields. Tuning E would switch each ferroic order independently, and achieve non-volatile switching of them together. Our observations demonstrate a new type of multiferroics and point to electrically tunable ultra-low power valleytronic and magnetic devices.

cond-mat.mes-hall

Correlated Insulator and Chern Insulators in Pentalayer Rhombohedral Stacked Graphene

Rhombohedral stacked multilayer graphene is an ideal platform to search for correlated electron phenomena, due to its pair of flat bands touching at zero energy and further tunability by an electric field. Furthermore, its valley-dependent Berry phase at zero energy points to possible topological states when the pseudospin symmetry is broken by electron correlation. However, experimental explorations of these opportunities are very limited so far, due to a lack of devices with optimized layer numbers and configurations. Here we present electron transport measurements of hBN-encapsulated pentalayer graphene at down to 100 milli-Kelvin. We observed a correlated insulating state with >MOhm resistance at zero charge density and zero displacement field, where the tight-binding calculation predicts a metallic ground state. By increasing the displacement field, we observed a Chern insulator state with C = -5 and two other states with C = -3 at a low magnetic field of ~1 Tesla. At high displacement fields and charge densities, we observed isospin-polarized quarter- and half-metals. Therefore, rhombohedral-stacked pentalayer graphene is the first graphene system to exhibit two different types of Fermi-surface instabilities: driven by a pair of flat bands touching at zero energy, and by the Stoner mechanism in a single flat band. Our results demonstrate a new direction to explore intertwined electron correlation and topology phenomena in natural graphitic materials without the need of moir\'e superlattice engineering.

cond-mat.mes-hall

Web-Scale Academic Name Disambiguation: the WhoIsWho Benchmark, Leaderboard, and Toolkit

Name disambiguation -- a fundamental problem in online academic systems -- is now facing greater challenges with the increasing growth of research papers. For example, on AMiner, an online academic search platform, about 10% of names own more than 100 authors. Such real-world challenging cases have not been effectively addressed by existing researches due to the small-scale or low-quality datasets that they have used. The development of effective algorithms is further hampered by a variety of tasks and evaluation protocols designed on top of diverse datasets. To this end, we present WhoIsWho owning, a large-scale benchmark with over 1,000,000 papers built using an interactive annotation process, a regular leaderboard with comprehensive tasks, and an easy-to-use toolkit encapsulating the entire pipeline as well as the most powerful features and baseline models for tackling the tasks. Our developed strong baseline has already been deployed online in the AMiner system to enable daily arXiv paper assignments. The public leaderboard is available at http://whoiswho.biendata.xyz/. The toolkit is at https://github.com/THUDM/WhoIsWho. The online demo of daily arXiv paper assignments is at https://na-demo.aminer.cn/arxivpaper.

cs.IR

Utopia point method based robust vector polynomial optimization scheme

In this paper, we focus on a class of robust vector polynomial optimization problems (RVPOP in short) without any convex assumptions. By combining/improving the utopia point method (a nonlinear scalarization) for vector optimization and "joint+marginal" relaxation method for polynomial optimization, we solve the RVPOP successfully. Both theoratical and computational aspects are considered.

math.OC

Spectroscopy Signatures of Electron Correlations in a Trilayer Graphene/hBN Moir\'e Superlattice

ABC-stacked trilayer graphene/hBN moir\'e superlattice (TLG/hBN) has emerged as a playground for correlated electron physics. We report spectroscopy measurements of dual-gated TLG/hBN using Fourier transformed infrared photocurrent spectroscopy. We observed a strong optical transition between moir\'e mini-bands that narrows continuously as a bandgap is opened by gating, indicating a reduction of the single particle bandwidth. At half-filling of the valence flat band, a broad absorption peak emerges at ~18 meV, indicating direct optical excitation across an emerging Mott gap. Similar photocurrent spectra are observed in two other correlated insulating states at quarter- and half-filling of the first conduction band. Our findings provide key parameters of the Hubbard model for the understanding of electron correlation in TLG/hBN.

cond-mat.str-el

Bridging the gap between atomically thin semiconductors and metal leads

Electrically interfacing atomically thin transition metal dichalcogenide semiconductors (TMDSCs) with metal leads is challenging because of undesired interface barriers, which have drastically constrained the electrical performance of TMDSC devices for exploring their unconventional physical properties and realizing potential electronic applications. Here we demonstrate a strategy to achieve nearly barrier-free electrical contacts with few-layer TMDSCs by engineering interfacial bonding distortion. The carrier-injection efficiency of such electrical junction is substantially increased with robust ohmic behaviors from room to cryogenic temperatures. The performance enhancements of TMDSC field-effect transistors are well reflected by the ultralow contact resistance (down to 90 Ohm um in MoS2, towards the quantum limit), the ultrahigh field-effect mobility (up to 358,000 cm2V-1s-1 in WSe2) and the prominent transport characteristics at cryogenic temperatures. This method also offers new possibilities of the local manipulation of structures and electronic properties for TMDSC device design.

cond-mat.mtrl-sci

Revisiting the third-order elastic constants of diamond: the higher-order effect

In this letter, we study the higher-order effect on the third-order elastic constants (TOECs) of diamond using longitudinal stress-uniaxial strain (LSUS) approach based on density functional theory. The result shows that the higher-order effect on TOECs is not negligible in the shock wave experiments and similar calculations. By taking the higher-order elastic response (up to fifth order) into consideration, the convergence of TOECs against maximum stain gets improved significantly and resolves the discrepancy of several different theoretical methods and experiments.

cond-mat.mtrl-sci

Accurate Measurement of the Gap of Graphene/hBN Moir\'e Superlattice through Photocurrent Spectroscopy

Monolayer graphene aligned with hexagonal boron nitride (hBN) develops a gap at the charge neutrality point (CNP). This gap has previously been extensively studied by electrical transport through thermal activation measurements. Here, we report the determination of the gap size at the CNP of graphene/hBN superlattice through photocurrent spectroscopy study. We demonstrate two distinct measurement approaches to extract the gap size. A maximum of ~ 14 meV gap is observed for devices with a twist angle of less than 1 degree. This value is significantly smaller than that obtained from thermal activation measurements, yet larger than the theoretically predicted single-particle gap. Our results suggest that lattice relaxation and moderate electron-electron interaction effects may enhance the CNP gap in hBN/graphene superlattice.

cond-mat.mes-hall

Selection of strain and fitting schemes for calculating higher-order elastic constants

Criteria of selecting strain and fitting schemes are proposed for the calculation of higher-order elastic constants more efficiently, robustly and accurately. As demonstrated by the third-order elastic constants (TOECs) of diamond, the proposed method is 3-5 times faster than existing methods, and the range of strain for getting correct TOECs is expanded. In addition, our result provides an evidence for the inaccuracy of some previous experiments caused by higher-order effect, and the difference among experiments and several different theoretical methods is resolved. Finally, we give the recommend TOECs values for diamond.

cond-mat.mtrl-sci

Nodal and nematic superconducting phases in NbSe2 monolayers from competing superconducting channels

Transition metal dichalcogenides like 2H-NbSe2 in their two-dimensional (2D) form exhibit Ising superconductivity with the quasiparticle spins are firmly pinned in the direction perpendicular to the basal plane. This enables them to withstand exceptionally high magnetic fields beyond the Pauli limit for superconductivity. Using field-angle-resolved magnetoresistance experiments for fields rotated in the basal plane we investigate the field-angle dependence of the upper critical field (Hc2), which directly reflects the symmetry of the superconducting order parameter. We observe a six-fold nodal symmetry superposed on a two-fold symmetry. This agrees with theoretical predictions of a nodal topological superconducting phase near Hc2, together with a nematic superconducting state. We demonstrate that in NbSe2 such unconventional superconducting states can arise from the presence of several competing superconducting channels.

cond-mat.supr-con

Intrinsic valley Hall transport in atomically thin MoS2

Electrons hopping in two-dimensional honeycomb lattices possess a valley degree of freedom in addition to charge and spin. In the absence of inversion symmetry, these systems were predicted to exhibit opposite Hall effects for electrons from different valleys. Such valley Hall effects have been achieved only by extrinsic means, such as substrate coupling, dual gating, and light illuminating. Here, we report the first observation of intrinsic valley Hall transport without any extrinsic symmetry breaking in the non-centrosymmetric monolayer and trilayer MoS2, evidenced by considerable nonlocal resistance that scales cubically with local resistance. Such a hallmark survives even at room temperature with a valley diffusion length at micron scale. By contrast, no valley Hall signal is observed in the centrosymmetric bilayer MoS2. Our work elucidates the topological quantum origin of valley Hall effects and marks a significant step towards the purely electrical control of valley degree of freedom in topological valleytronics.

cond-mat.mes-hall

Probing Landau levels of strongly interacting massive Dirac electrons in layer-polarized MoS$_2$

Monolayer transition metal dichalcogenides are recently emerged 2D electronic systems with various novel properties, such as spin-valley locking, circular dichroism, valley Hall effects, Ising superconductivity. The reduced dimensionality and large effective masses further produce unconventional many-body interaction effects. Although recent hole transport measurements in WSe$_2$ indicate strong interactions in the valence bands, many-body interaction effects, particularly in the conduction bands, remain elusive to date. Here, for the first time, we perform transport measurements up to a magnetic field of $29$T to study the massive Dirac electron Landau levels (LL) in layer-polarized MoS$_2$ samples with mobilities of $22000$cm$^2$/(V$\cdot$s) at $1.5$K and densities of $\sim10^{12}$cm$^{-2}$. With decreasing the density, we observe LL crossing induced valley ferrimagnet-to-ferromagnet transitions, as a result of the interaction enhancement of the g-factor from $5.64$ to $21.82$. Near integer ratios of Zeeman-to-cyclotron energies, we discover LL anticrossings due to the formation of quantum Hall Ising ferromagnets, the valley polarizations of which appear to be reversible by tuning the density or an in-plane magnetic field. Our results provide compelling evidence for many-body interaction effects in the conduction bands of monolayer MoS$_2$ and establish a fertile ground for exploring strongly correlated phenomena of massive Dirac electrons.

cond-mat.mes-hall

Probing strong interactions in p-type few-layer WSe$_2$ by density-dependent Landau level crossing

Atomically thin transition metal dichalcogenides (TMDCs) such as MoS$_2$ and WSe$_2$ are emerging as a new platform for exploring many-body effects. Coulomb interactions are markedly enhanced in these materials because of the reduced screening and the large Wigner-Seitz radii. Although many-body excitonic effects in TMDCs have been extensively studied by optical means, not until recently did probing their strongly correlated electronic effects become possible in transport. Here, in p-type few-layer WSe$_2$ we observe highly density-dependent quantum Hall states of Γ valley holes below 12 T, whose predominant sequences alternate between odd- and even-integers. By tilting the magnetic field to induce Landau level crossings, we show that the strong Coulomb interaction enhances the Zeeman-to-cyclotron energy ratio from 2.67 to 3.55 as the density is reduced from 5.7 to 4.0$\times$10$^{12}$ cm$^{-2}$, giving rise to the even-odd alternation. Unprecedentedly, this indicates a 4.8 times enhancement of the g-factor over its band theory value at a density as high as 4.0$\times$10$^{12}$ cm$^{-2}$. Our findings unambiguously demonstrate that p-type few-layer WSe$_2$ is a superior platform for exploring strongly correlated electronic phenomena, opening a new perspective for realizing the elusive Wigner crystallization at a moderate density.

cond-mat.mes-hall

Isolation and Characterization of Few-layer Manganese Thiophosphite

This work reports an experimental study on an antiferromagnetic honeycomb lattice of MnPS$_3$ that couples the valley degree of freedom to a macroscopic antiferromagnetic order. The crystal structure of MnPS$_3$ is identified by high resolution scanning transmission electron microscopy. Layer dependent angle resolved polarized Raman fingerprints of the MnPS$_3$ crystal are obtained and the Raman peak at 383 cm$^{-1}$ exhibits 100% polarity. Temperature dependences of anisotropic magnetic susceptibility of MnPS$_3$ crystal are measured in superconducting quantum interference device. Magnetic parameters like effective magnetic moment, and exchange interaction are extracted from the mean field approximation mode. Ambipolar electronic transport channels in MnPS$_3$ are realized by the liquid gating technique. The conducting channel of MnPS$_3$ offers a unique platform for exploring the spin/valleytronics and magnetic orders in 2D limitation.

cond-mat.mes-hall

Quantum Transport in Ambipolar Few-layer Black Phosphorus

Few-layer black phosphorus possesses unique electronic properties giving rise to distinct quantum phenomena and thus offers a fertile platform to explore the emergent correlation phenomena in low dimensions. A great progress has been demonstrated in improving the quality of hole-doped few-layer black phosphorus and its quantum transport studies, whereas the same achievements are rather modest for electron-doped few-layer black phosphorus. Here, we report the ambipolar quantum transport in few-layer black phosphorus exhibiting undoubtedly the quantum Hall effect for hole transport and showing clear signatures of the quantum Hall effect for electron transport. By bringing the spin-resolved Landau levels of the electron-doped black phosphorus to the coincidence, we measure the spin susceptibility $χ_s=m^\ast g^\ast=1.1\pm0.03$. This value is larger than for hole-doped black phosphorus and illustrates an energetically equidistant arrangement of spin-resolved Landau levels. Evidently, the n-type black phosphorus offers a unique platform with equidistant sequence of spin-up and spin-down states for exploring the quantum spintronic.

cond-mat.mes-hall

Gate-tunable strong-weak localization transition in few-layer black phosphorus

Atomically thin black phosphorus (BP) field-effect transistors show strong-weak localization transition which is tunable through gate voltages. Hopping transports through charge impurity induced localized states are measured at low-carrier density regime. Variable-range hopping model is applied to simulate the charge carrier scattering behavior. In the high-carrier concentration regime, a negative magnetoresistance signals the weak localization effect. The extracted phase coherence length is power-law temperature dependent ($\sim T^{-0.48\pm0.03}$) and demonstrates electron-electron interactions in few-layer BP. The competition between the Strong localization length and phase coherence length is proposed and discussed based on the observed gate tunable strong-weak localization transition in few-layer BP.

cond-mat.mes-hall