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Tomoki Yoshikawa

Publications and source records attributed to Tomoki Yoshikawa.

4 recordsLinked to original sources

Emergence of low-energy electronic states in oxygen-controlled Mott insulator Ca$_{2}$RuO$_{4+δ}$

Insulator-to-metal transition in Ca$_{2}$RuO$_{4}$ has drawn keen attention because of its sensitivity to various stimulation and its potential controllability. Here, we report a direct observation of Fermi surface, which emerges upon introducing excess oxygen into an insulating Ca$_{2}$RuO$_{4}$, by using angle-resolved photoemission spectroscopy. Comparison between energy distribution curves shows that the Mott insulating gap is closed by eV-scale spectral-weight transfer with excess oxygen. Momentum-space mapping exhibits two square-shaped sheets of the Fermi surface. One is a hole-like $α$ sheet around the corner of a tetragonal Brillouin zone, and the other is an electron-like $β$ sheet around the $Γ$ point. The electron occupancies of the $α$ and $β$ bands are determined to be $n_α=1.6$ and $n_β=0.6$, respectively. Our result indicates that the insulator-to-metal transition occurs selectively in $d_{xz}$ and $d_{yz}$ bands and not yet in $d_{xy}$ band. This orbital selectivity is most likely explained in terms of the energy level of $d_{xy}$, which is deeper for Ca$_{2}$RuO$_{4+δ}$ than for Ca$_{1.8}$Sr$_{0.2}$RuO$_{4}$. Consequently, we found substantial differences from the Fermi surface of other ruthenates, shedding light on a unique role of excess oxygen among the metallization methods of Ca$_{2}$RuO$_{4}$.

cond-mat.str-el

Visualizing half-metallic bulk band structure with multiple Weyl cones of the Heusler ferromagnet

Using a well-focused soft X-ray synchrotron radiation beam, angle-resolved photoelectron spectroscopy was applied to a full-Heusler-type Co$_2$MnGe alloy to elucidate its bulk band structure. A large parabolic band at the Brillouin zone center and several bands that cross the Fermi level near the Brillouin zone boundary were identified in line with the results from first-principles calculations. These Fermi level crossings are ascribed to majority spin bands that are responsible for electron transport with extremely high spin polarization especially along the direction being perpendicular to the interface of magneto-resistive devices. The spectroscopy confirms there is no contribution of the minority spin bands to the Fermi surface, signifying half-metallicity for the alloy. Furthermore, two topological Weyl cones with band crossing points were identified around the $X$ point, yielding the conclusion that Co$_2$MnGe could exhibit topologically meaningful behavior such as large anomalous Hall and Nernst effects driven by the Berry flux in its half-metallic band structure.

cond-mat.mtrl-sci

Direct evidence of hidden local spin polarization in a centrosymmetric superconductor LaO$_{0.55}$F$_{0.45}$BiS$_2$

Conventional Rashba spin polarization is caused by the combination of strong spin-orbit interaction (SOI) and spatial inversion asymmetry. However, Rashba- and Dresselhaus-type spin-split states are predicted in LaOBiS$_2$ system by recent theory even though the crystal structure is centrosymmetric, which stem from the local inversion asymmetry of active BiS$_2$ layer. By performing high-resolution spin- and angle-resolved photoemission spectroscopy, we have investigated the electronic band structure and spin texture of superconductor LaO$_{0.55}$F$_{0.45}$BiS$_2$. Our studies present direct spectroscopic evidence for the local spin polarization in the vicinity of X point of both valence band and conduction band. Especially the coexistence of Rashba-like and Dresselhaus-like spin textures has been observed in the conduction band for the first time. The finding is of key importance for fabrication of proposed dual-gated spin-field effect transistor (SFET). Moreover, the spin-split band leads to a spin-momentum locking Fermi surface from which novel superconductivity emerges. Our demonstration not only expands the scope of spintronic materials but also enhances the understanding of SOI related superconductivity.

cond-mat.mtrl-sci

High quality atomically thin PtSe2 films grown by molecular beam epitaxy

Atomically thin PtSe2 films have attracted extensive research interests for potential applications in high-speed electronics, spintronics and photodetectors. Obtaining high quality, single crystalline thin films with large size is critical. Here we report the first successful layer-by-layer growth of high quality PtSe2 films by molecular beam epitaxy. Atomically thin films from 1 ML to 22 ML have been grown and characterized by low-energy electron diffraction, Raman spectroscopy and X-ray photoemission spectroscopy. Moreover, a systematic thickness dependent study of the electronic structure is revealed by angle-resolved photoemission spectroscopy (ARPES), and helical spin texture is revealed by spin-ARPES. Our work provides new opportunities for growing large size single crystalline films for investigating the physical properties and potential applications of PtSe2.

cond-mat.mtrl-sci