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Toshihiro Taen

Publications and source records attributed to Toshihiro Taen.

At least 19 recordsLinked to original sources

Magnetic-field periodic quantum Sondheimer oscillations in thin-film graphite

Materials with the mesoscopic scales have provided an excellent platform for quantum-mechanical studies. Among them, the periodic oscillations of the electrical resistivity against the direct and the inverse of the magnetic fields, such as the Aharonov-Bohm effect and the Shubnikov-de Haas effect, manifest the interference of the wavefunction relevant to the electron motion perpendicular to the magnetic field. In contrast, the electron motion along the magnetic field also leads to the magnetic-field periodicity, which is the so-called Sondheimer effect. However, the Sondheimer effect has been understood only in the framework of the semiclassical picture, and thereby its interpretation at the quasiquantum limit was not clear. Here, we show that thin-film graphite exhibits clear sinusoidal oscillations with a period of about 1-3 T over a wide range of the magnetic fields (from around 10 T to 30 T), where conventional quantum oscillations are absent. In addition, the sample with a designed step in the middle for eliminating the stacking disorder effect verifies that the period of the oscillations is inversely proportional to the thickness, which supports the emergence of the Sondheimer oscillations in the quasiquantum limit. These findings suggest that the Sondheimer oscillations can be reinterpreted as inter-Landau-level resonances even at the field range where the semiclassical picture fails. Our results expand the quantum oscillation family, and pave the way for the exploration of the out-of-plane wavefunction motion.

cond-mat.mes-hall

Quantized thermoelectric Hall plateau in the quantum limit of graphite as a nodal line semimetal

We performed thermoelectric Hall conductivity $α_{xy}$ measurements on single-crystal graphite in the quantum limit up to 13 T. Both electrical and thermoelectric transport measurements were performed on the same crystal to extract pure $α_{xy}$, avoiding any sample quality dependence. The $α_{xy}$ converges to a plateau in the quantum limit with a linear dependence on temperature. This behavior is analogous to the quantized thermoelectric Hall effect (QTHE) observed in three-dimensional Dirac/Weyl nodal-point semimetals, and experimentally confirms a theoretical proposal on the QTHE in semimetals with nodal lines as in graphite.

cond-mat.mes-hall

Weak localization on moiré superlattice in twisted double bilayer graphene

Moiré superlattice created by twist stacking has multiple physical properties. These physical properties depend on the twist angle, hence investigation of the twist angle dependency is important for the deep understanding of physical phenomena in moiré superlattice. In this work, negative magnetoresistance owing to weak localization (WL) was investigated in twisted double bilayer graphene (TDBG) as a function of the twist angle. The ratio of the intervalley scattering time to the intravalley scattering time, estimated using the WL formula for bilayer graphene, tended to decrease as the twist angle increased. This feature is qualitatively explained by the enhancement of intervalley scattering due to the reduction of the intervalley distance in the moiré Brillouin zone (BZ) of the TDBG. This indicates that WL in the TDBG occurs for the moiré superlattice with the reconstructed BZ.

cond-mat.mes-hall

Thermoelectric Hall Effect at High-Magnetic-Field Quantum Limit in Graphite as a Nodal-Line Semimetal

The high-magnetic-field thermoelectric effect in nodal-line semimetals with straight nodal lines was investigated. Three-dimensional (3D) Dirac/Weyl semimetals exhibit constant thermoelectric Hall conductivity at the high-magnetic-field quantum limit, resulting in a boundless linear increase of Seebeck coefficient. This is known as the quantized thermoelectric Hall effect (QTHE), and is expected to lead to high-performance thermoelectricity at low temperatures. Here, in addition to Dirac/Weyl semimetals, we demonstrated that 3D semimetals with straight nodal lines can also exhibit the QTHE under high magnetic fields. As a candidate material for experimental validation, we discussed the thermoelectric properties of bulk graphite. Furthermore, we investigated the dimensional crossover of thermoelectricity to two-dimensional behavior in thin-film graphite.

cond-mat.mes-hall

Double carrier transport in electron doped region in black phosphorus FET

The double carrier transport has been observed in thin film black phosphorus (BP) field effect transistor (FET) devices in highly electron doped region. BP thin films with typical thickness of 15 nm were encapsulated by hexagonal boron nitride (h-BN) thin films to avoid degradation by air exposure. Their Hall mobility has reached 5300 cm2/Vs and 5400 cm2/Vs at 4.2 K in the hole and electron doped regions, respectively. The gate voltage dependence of conductivity exhibits an anomalous shoulder structure in electron doped region. In addition, at gate voltages above the shoulder, the magnetoresistance changes to positive, and there appears an additional slow Shubnikov-de Haas oscillation. These results strongly suggest the appearance of the second carriers, which originate from the second subband with localized band edge.

cond-mat.mes-hall

Thickness-dependent phase transition in graphite under high magnetic field

Various electronic phases emerge when applying high magnetic fields in graphite. However, the origin of a semimetal-insulator transition at $B \simeq 30\; \textrm{T}$ is still not clear, while an exotic density-wave state is theoretically proposed. In order to identify the electronic state of the insulator phase, we investigate the phase transition in thin-film graphite samples that were fabricated on silicon substrate by a mechanical exfoliation method. The critical magnetic fields of the semimetal-insulator transition in thin-film graphite shift to higher magnetic fields, accompanied by a reduction in temperature dependence. These results can be qualitatively reproduced by a density-wave model by introducing a quantum size effect. Our findings establish the electronic state of the insulator phase as a density-wave state standing along the out-of-plane direction, and help determine the electronic states in other high-magnetic-field phases.

cond-mat.mes-hall

Electronic Structure and the Properties of Phosphorene Systems

A single atomic layer of black phosphorus, phosphorene, was experimentally realized in 2014. It has a puckered honeycomb lattice structure and a semiconducting electronic structure. In the first part of this paper, we use a simple LCAO model, and discuss qualitatively the electronic structure of phosphorene systems under electric and magnetic fields, especially, noting their midgap edge states. The next part is spent for the review of the research progress on phosphorene in the past one year since its appearance in 2014. Phosphorene has been a typical object to study the semiconductor physics in atomic layers.

cond-mat.mes-hall

Evolution of superconducting and transport properties in annealed FeTe$_{1-x}$Se$_x$ (0.1 $\leq$ $x$ $\leq$ 0.4) multiband superconductors

We investigated the superconducting and transport properties in FeTe$_{1-x}$Se$_{x}$ (0.1 $\leq$ $x$ $\leq$ 0.4) single crystals prepared by O$_2$-annealing. Sharp superconducting transition width observed in magnetization measurement and the small residual resistivity prove the high quality of the crystals. All the crystals manifest large, homogeneous, and isotropic critical current density \emph{J}$_c$ with self-field value over 10$^5$ A/cm$^2$ at 2 K. The large and field-robust critical current densities prove that the superconductivity in FeTe$_{1-x}$Se$_{x}$ (0.1 $\leq$ $x$ $\leq$ 0.4) is in bulk nature. The values of anisotropy parameter close to $T_c$ for crystals with different Se doping levels all reside in the range of 2 - 3. Hall coefficients $R_H$ keeps positive and almost constant value at high temperatures, followed by a sudden decreases before reaching $T$$_c$, which indicates that the electron-type charge carriers become dominant at low temperatures. Furthermore, the characteristic temperature for the sudden decrease in $R_H$ gradually increases with Se doping.

cond-mat.supr-con

Multiband Effect and Possible Dirac Fermions in Fe$_{1+y}$Te$_{0.6}$Se$_{0.4}$

We investigated the transport properties of Fe$_{1+y}$Te$_{0.6}$Se$_{0.4}$ single crystals with different amounts of excess Fe prepared by O$_2$ annealing. The O$_2$ annealing remarkably improves transport properties. In particular, a strongly nonlinear Hall resistivity was observed only in the fully-annealed crystal, and the magnetoresistance (MR) is drastically enhanced after annealing, reaching a value larger than 17% at 16 K and 14 T. The obvious change of transport properties after the annealing indicates that the band structure of Fe$_{1+y}$Te$_{0.6}$Se$_{0.4}$ is affected by the excess Fe. The nonlinear Hall resistivity and violation of (modified) Kohler's scaling of the large MR prove the multiband effects in the Fe$_{1+y}$Te$_{0.6}$Se$_{0.4}$ single crystal. The MR for the fully-annealed crystal develops linearly against magnetic field from intermediate field (e. g. 2 T at 16 K) to the measurement limit of 14 T. This phenomenon is interpreted by the existence of Dirac cone state, in which all the Dirac fermions occupy only the lowest Landau level in the quantum limit.

cond-mat.supr-con

Dynamics and mechanism of oxygen annealing in Fe$_{1+y}$Te$_{0.6}$Se$_{0.4}$ single crystal

Iron chalcogenide Fe(Te,Se) attracted much attention due to its simple structure, which is favorable for probing the superconducting mechanism. Its less toxic nature compared with iron arsenides is also advantageous for applications of iron-based superconductors. By intercalating spacer layers, superconducting transition temperature has been raised over 40 K. On the other hand, the presence of excess Fe is almost unavoidable in Fe(Te,Se) single crystals, which hinders the appearance of bulk superconductivity and causes strong controversies over its fundamental properties. Here we report a systematical study of O$_2$-annealing dynamics in Fe$_{1+y}$Te$_{1-x}$Se$_{x}$ by controlling the amount of O$_2$, annealing temperature, and time. Bulk superconductivity can be gradually induced by increasing the amount of O$_2$ and annealing time at suitable temperatures. The optimally annealed crystals can be easily obtained by annealing with ~ 1.5% molar ratio of oxygen at 400 $^{\circ}$C for more than 1 hour. Superconductivity was witnessed to evolve mainly from the edge of the crystal to the central part. After the optimal annealing, the complete removal of excess Fe was demonstrated via STM measurements. Some fundamental properties were recharacterized and compared with those of as-grown crystals to discuss the influence of excess Fe.

cond-mat.supr-con

Enhancement of Critical Current Densities in (Ba,K)Fe2As2 by 320 MeV Au Irradiation in Single Crystals and by High-Pressure Sintering in PIT Wires

We demonstrate a large enhancement of critical current density (Jc) up to 1.0x10^7 A/cm2 at 5 K under self-field in (Ba,K)Fe2As2 single crystals by irradiating 320 MeV Au ions. With the very promising potential of this material in mind, we have fabricated a (Ba,K)Fe2As2 superconducting wire through a powder-in-tube method combined with the hot isostatic pressing technique, whose effectiveness has been proven in industrial Bi2223 tapes. The Jc in the wire at 4.2 K has reached 37 kA/cm2 under self-field and 3.0 kA/cm2 at 90 kOe. Magneto-optical imaging of the wire confirmed the large intergranular Jc in the wire core.

cond-mat.supr-con

Bulk Superconductivity in Fe$_{1+y}$Te$_{1-x}$Se$_{x}$ Induced by Annealing in Se and S Vapor

We reported that bulk superconductivity in Fe$_{1+y}$Te$_{1-x}$Se$_{x}$ can be induced by annealing in Se and S vapor. The well-annealed samples show a large critical current density, emph{J}$_c$ $\sim$ 2 - 4 $\times$ 10$^5$ A/cm$^2$. Combined with our previous reports about O$_2$ and Te annealing effects, we proved that bulk superconductivity can be successfully induced in Fe$_{1+y}$Te$_{1-x}$Se$_{x}$ by annealing in atmosphere of all chalcogens, such as O, S, Se and Te.

cond-mat.supr-con

Magnetic relaxation and collective vortex creep in FeTe$_{0.6}$Se$_{0.4}$ single crystal

We study the vortex dynamics in high-quality FeTe$_{0.6}$Se$_{0.4}$ single crystal by performing magnetization measurements of the screening current density \emph{J}$_s$ and flux creep rate \emph{S}. Temperature dependence of \emph{S} shows a plateau in the intermediate temperature region with a high creep rate $\sim$ 0.03, which is interpreted in the framework of the collective creep theory. A crossover from elastic to plastic creep is observed. The glassy exponent and barrier height for flux creep are directly determined by extended Maley's method. \emph{J}$_s$ with flux creep, obtained from magnetic hysteresis loops, is successfully reproduced based on the collective creep analysis. We also approach critical current density without flux creep by means of the generalized inversion scheme, which proves that the $δ$\emph{l} and $δ$\emph{T}$_c$ pinning coexist in FeTe$_{0.6}$Se$_{0.4}$ single crystal.

cond-mat.supr-con

Evolution of Superconductivity in Fe$_{1+y}$Te$_{1-x}$Se$_{x}$ Annealed in Te Vapor

We report a detailed study of the Te vapor annealing effect in Fe$_{1+y}$Te$_{0.6}$Se$_{0.4}$ single crystals. Bulk superconductivity can be gradually induced by annealing with increasing amount of Te, until the molar ratio of Te to the sample reaches 1 : 10. By further increasing Te molar ratio, superconducting volume is gradually reduced. Resistivity and Hall effect measurements manifest that annealing in Te vapor delocalizes the charge carriers by removing excess Fe. The optimally Te annealed crystal shows homogeneous critical current densities with a large value of $\sim$ 4.3 $\times$ 10$^5$ A/cm$^2$, which proves that the Te annealing is effective to induce bulk superconductivity in Fe$_{1+y}$Te$_{1-x}$Se$_{x}$.

cond-mat.supr-con

Large, Homogeneous, and Isotropic Critical Current Density in Oxygen-Annealed Fe1+yTe0.6Se0.4 Single Crystal

We reported a controllable way of removing excess Fe in Fe1+yTe0.6Se0.4 by annealing in a fixed amount of O2. Compared with the weak superconductivity induced by dilute acids, O2 annealing can successfully induce bulk superconductivity. Proper O2 annealing changes the temperature dependence of resistivity at low temperatures from semiconducting to metallic, which comes from the deintercalation of excess Fe. Critical current densities with field along the c-axis and ab-plane are found almost isotropic with large values of 3*10^5 A/cm2 and 2.5*10^5 A/cm2 at 2 K. Furthermore, magneto-optical images reveal isotropic current flow within the ab-plane.

cond-mat.supr-con

Anisotropies and Homogeneities of Superconducting Properties in Iron-Platinum-Arsenide Ca10(Pt3As8)(Fe1.79Pt0.21As2)5

We report a study on the anisotropy of superconducting properties in single crystalline Ca10(Pt4-δAs8)(Fe1.79Pt0.21As2)5 with Tc ~13.6 K. Under a field of 5 Oe, the sample reaches fully-diamagnetic state at ~10 K for H//c, and ~8 K for H//ab, indicating the presence of slight inhomogeneities. The magnetization measurements reveal fish-tail effect in the hysteresis loop for both H//c and H//ab. Averaged critical current densities at low magnetic fields along the c-axis and ab-plane Jc(H//c) and Jc(H//ab) at 5 K are estimated to be 0.9*10^5 and 0.7*10^5 A/cm2, respectively. Resistive transitions under magnetic field show broadening, which is consistent with a relatively large anisotropy of upper critical field. Magneto-optical images reveal homogenous current flow within the ab-plane.

cond-mat.supr-con

Enhancement of critical current density and vortex activation energy in proton-irradiated Co-doped BaFe2As2

The effect of proton irradiation in Ba(Fe0.93Co0.07)2As2 single crystals is reported. We analyze temperature dependence of current density and normalized flux relaxation rate in the framework of collective creep model. Glassy exponent and barrier height for flux creep are directly determined by Maley's method. Our model functions for barrier height and critical current density in the absence of flux creep are explained by the superposition of \deltaTc- and \deltal-pinning. We also approach true critical current density by means of generalized inversion scheme, and the obtained result is in reasonable agreement with our model function. Proton irradiation effect on temperature dependence of current density and normalized relaxation rate can be summarized as doubling of barrier height at the beginning of flux creep.

cond-mat.supr-con

Magnetic and transport properties of iron-platinum arsenide Ca10(Pt4-δAs8)(Fe2-xPtxAs2)5 single crystal

We report superconducting properties of single crystalline Ca10(Pt4-δAs8)(Fe2-xPtxAs2)5 by X-ray diffraction, magnetization, resistivity, and magneto-optical imaging measurements. The magnetization measurements reveal fish-tail hysteresis loop and relatively high critical current density Jc ~ 0.8\times105 A/cm2 at low temperatures. The exponential temperature dependence of Jc, which arises from nonlinear effective flux-creep activation energy, has been observed. Upper critical field determined by resistive transition shows a relatively large anisotropy. The magneto-optical images reveal homogenous current flow within the crystal.

cond-mat.supr-con