arXiv subjects

Toshio Kamiya

Publications and source records attributed to Toshio Kamiya.

At least 37 records · Page 2Linked to original sources

arXiv2014

Critical factor for epitaxial growth of cobalt-doped BaFe2As2 films by pulsed laser deposition

We heteroepitaxially grew cobalt-doped BaFe2As2 films on (La,Sr)(Al,Ta)O3 single-crystal substrates by pulsed laser deposition using four different wavelengths and investigated how the excitation wavelength and pulse energy affected growth. Using the tilting and twisting angles of X-ray diffraction rocking curves, we quantitatively analyzed the crystallinity of each film. We found that the optimal deposition rate, which could be tuned by pulse energy, was independent of laser wavelength. The high-quality film grown at the optimal pulse energy (i.e., the optimum deposition rate) exhibited high critical current density over 1 MA/cm2 irrespective of the laser wavelength.

cond-mat.supr-con↗

arXiv2014

Electric double-layer transistor using layered iron selenide Mott insulator TlFe1.6Se2

A1-xFe2-ySe2 (A = K, Cs, Rb, Tl) are recently discovered iron-based superconductors with critical temperatures (Tc) ranging up to 32 K. Their parent phases have unique properties when compared with other iron-based superconductors; e.g., their crystal structures include ordered Fe vacancies, their normal states are antiferromagnetic (AFM) insulating phases, and they have extremely high Néel transition temperatures. However, control of carrier doping into the parent AFM insulators has been difficult due to their intrinsic phase separation. Here, we fabricated an Fe-vacancy-ordered TlFe1.6Se2 insulating epitaxial film with an atomically flat surface and examined its electrostatic carrier doping using an electric double-layer transistor (EDLT) structure with an ionic liquid gate. The positive gate voltage gave conductance modulation of three orders of magnitude at 25 K, and further induced and manipulated a phase transition; i.e., delocalized carrier generation by electrostatic doping is the origin of the phase transition. This is the first demonstration, to the authors' knowledge, of an EDLT using a Mott insulator iron-selenide channel and opens a way to explore high-Tc superconductivity in iron-based layered materials, where carrier doping by conventional chemical means is difficult.

cond-mat.mtrl-sci↗

arXiv2013

Epitaxial Growth and Electronic Structure of a Layered Zinc Pnictide Semiconductor, beta-BaZn2As2

BaZn2As2 is expected for a good p-type semiconductor and has two crystalline phases of an orthorhombic alpha phase and a higher-symmetry tetragonal beta phase. Here, we report high-quality epitaxial films of the tetragonal beta-BaZn2As2 were grown on single-crystal MgO (001) substrates by a reactive solid-phase epitaxy technique. Out-of-plane and in-plane epitaxial relationships between the film and the substrate were BaZn2As2 (00l)//MgO (001) and BaZn2As2 [200]//MgO [200], respectively. The full-widths at half maximum were 0.082o for a 008 out-of-plane rocking curve and 0.342o for a 200 in-plane rocking curve. A step-and-terrace structure was observed by atomic force microscopy. The band gap of beta-BaZn2As2 was evaluated to be around 0.2 eV, which is much smaller than that of a family compound LaZnOAs (1.5 eV). Density functional theory calculation using the Heyd-Scuseria-Ernzerhof hybrid functionals supports the small band gap.

cond-mat.mtrl-sci↗

arXiv2013

Unusual pressure effects on the superconductivity of indirectly electron-doped (Ba1-xLax)Fe2As2 epitaxial films

Applying an external pressure to indirectly electron-doped 122-type (Ba1-xLax)Fe2As2 epitaxial films enhances the superconducting critical temperature (Tc) up to 30.3 K. Different from the other family compounds, the Tc is enhanced not only in the under-doped region but also in the optimally doped and over-doped regions. Narrowing of the superconducting transition width and an increase in the carrier density take place simultaneously in the whole doping region, except at the heavily over-doped limit. This characteristic is unique to and observed only in (Ba1-xLax)Fe2As2, in which the La doping is stabilized via non-equilibrium growth of the vapor phase epitaxy, among the 122-type iron-based superconductors, AFe2As2 (A = Ba, Sr, and Ca).

cond-mat.supr-con↗

arXiv2013

Magnetic scattering and electron pair breaking by rare-earth-ion substitution in BaFe2As2 epitaxial films

The effect of electron doping by trivalent charge state rare-earth ion (RE = La, Ce, Pr, and Nd) substitutions on the superconductivity in BaFe2As2 was examined using epitaxial films. Each of the RE substitutions suppressed the resistivity anomaly associated with the magnetic/structural phase transitions, leading to the resistivity drops and superconductivity transitions. Bulk superconductivity was observed at the maximum onset critical temperature (Tconset) of 22.4 K for La-doping and 13.4 K for Ce-doping, while only broad resistivity drops were observed at 6.2 K for Pr-doping and 5.8 K for Nd-doping but neither zero resistivity nor distinct Meissner effect were observed at least down to 2 K. The decrease in Tconset with increasing the number of RE 4f electrons cannot be explained in terms of the crystalline qualities or crystallographic structure parameters of the BaFe2As2 films. It was clarified, based on resistivity-temperature analyses, that magnetic scattering became increasingly significant in the above order of the RE dopants. The negative magnetoresistance was enhanced by the Ce- and Pr-doping, implying that the decrease in Tc originates from magnetic pair breaking by interaction of the localized 4f orbitals in the RE dopants with the itinerant Fe 3d orbitals.

cond-mat.supr-con↗

arXiv2013

Anomalous scaling behavior in a mixed-state Hall effect of a cobalt-doped BaFe2As2 epitaxial film with a high critical current density over 1 MA/cm2

The mixed-state Hall effect was examined in a Ba(Fe1-xCox)2As2 epitaxial film with a high critical current density. The transverse resistivity ρxy and the longitudinal resistivity ρxx follow power law scaling ρxy = Aρxxβ. In the temperature-sweep with a fixed field (T sweep), all of the β values are independent of magnetic field up to 9 T, and are lower than 2.0 (around 1.8). In contrast, the β values in the magnetic-field sweep with a fixed temperature (H sweep) change from 1.8 to 2.0 as the temperature increases from 13 to 16 K even in the T/H region that overlaps with the T sweep measurements. These results indicate that the vortices introduced at low temperatures are trapped by strong pinning centers, but a portion of the vortices introduced at high temperatures are not strongly trapped by the pinning centers. The sign of ρxy is negative, and a sign reversal is not detected. These distinct scaling behaviors, which sharply contrast cuprates and MgB2, are explained by high-density c-axis pinning centers in the Ba(Fe1-xCox)2As2 epitaxial film and are consistent with a wider vortex liquid phase.

cond-mat.supr-con↗

arXiv2013

Superconducting Properties and Phase Diagram of Indirectly Electron-Doped (Sr1-xLax)Fe2As2 Epitaxial Films Grown by Pulsed Laser Deposition

A non-equilibrium phase (Sr1-xLax)Fe2As2 was formed by epitaxial film-growth. The resulting films emerged superconductivity along with suppression of the resistivity anomaly that is associated with magnetic and structural phase transitions. The maximum critical temperature was 20.8 K, which is almost the same as that of directly electron-doped Sr(Fe1-xCox)2As2. Its electronic phase diagram is much similar to that of Sr(Fe1-xCox)2As2, indicating that the difference in the electron doping sites does not influence the superconducting properties of 122-type SrFe2As2.

cond-mat.supr-con↗

arXiv2012

Thin film growth by pulsed laser deposition and properties of 122-type iron-based superconductor AE(Fe1--xCox)2As2 (AE = alkaline earth)

This paper reports comprehensive results on thin-film growth of 122-type iron-pnictide superconductors, AE(Fe1-xCox)2As2 (AE = Ca, Sr, and Ba, AEFe2As2:Co) by a pulsed laser deposition method using a neodymium-doped yttrium aluminum garnet laser as an excitation source. The most critical parameter to produce the SrFe2As2:Co and BaFe2As2:Co phases is the substrate temperature (Ts). It is difficult to produce highly-pure CaFe2As2:Co phase thin film at any Ts. For BaFe2As2:Co epitaxial films, controlling Ts at 800-850 °C and growth rate to 2.8-3.3 Å/s produced high-quality films with good crystallinity, flat surfaces, and high critical current densities > 1 MA/cm2, which were obtained for film thicknesses from 100 to 500 nm. The doping concentration x was optimized for Ba(Fe1-xCox)2As2 epitaxial films, leading to the highest critical temperature of 25.5 K in the epitaxial films with the nominal x = 0.075.

cond-mat.supr-con↗

arXiv2012

Identical effects of indirect and direct electron doping of superconducting BaFe2As2 thin films

Electron doping of a 122-type iron pnictide BaFe2As2 by substituting the Ba site with an aliovalent ion (indirect doping), which had been unsuccessful by conventional solid-state synthesis methods, was achieved by a non-equilibrium film growth process. The substitution with La was substantiated by a systematic shrinkage of the c-axis lattice parameter due to the smaller ionic radius of La3+ than that of Ba2+. A negative Hall coefficient indicated that the majority carriers were electrons, as is consistent with this aliovalent ion doping. The La substitution suppressed an antiferromagnetic transition and induced bulk superconductivity at a maximum onset critical temperature (Tc) of 22.4 K. The electronic phase diagram for (Ba1-xLax)Fe2As2 was built, which revealed that the indirect electron doping at the Ba site with La [(Ba1-xLax)Fe2As2] exhibits almost the same Tc - doping level relation as that of the direct electron-doping at the Fe site with Co [Ba(Fe1-xCox)2As2]. This finding clarified that Tc in 122-type compounds is not affected by a crystallographic doping site, which is in sharp contrast to the 1111-type compounds, REFeAsO (RE = rare earth). It is tentatively attributed to the differences in their dimensionality of electronic structures and electron pairing symmetries.

cond-mat.supr-con↗

arXiv2011

Thin Film Growth and Device Fabrication of Iron-Based Superconductors

Iron-based superconductors have received much attention as a new family of high-temperature superconductors owing to their unique properties and distinct differences from cuprates and conventional superconductors. This paper reviews progress in thin film research on iron-based superconductors since their discovery for each of five material systems with an emphasis on growth, physical properties, device fabrication, and relevant bulk material properties.

cond-mat.supr-con↗

arXiv2011

LaCo2B2: A Co-based layered superconductor with a ThCr2Si2-type structure

LaCo2B2 with a ThCr2Si2-type structure composed of alternately stacked La and CoB layers exhibits metallic electrical conductivity and Pauli paramagnetic behavior down to 2K. Bulk superconductivity with a Tc of ~4K emerges upon substitution with dopant elements; i.e., isovalent substitution to form (La1-xYx)Co2B2, or aliovalent substitution to form La(Co1-xFex)2B2. Highly covalent bonding between Co 3d and B 2p levels in the CoB layers, which is caused by the B 2p level being shallower than the Fermi level, removes magnetic ordering from Co 3d electrons even in the undoped samples.

cond-mat.supr-con↗

arXiv2011

Advantageous grain boundaries in iron pnictide superconductors

High critical temperature superconductors have zero power consumption and could be used to produce ideal electric power lines. The principal obstacle in fabricating superconducting wires and tapes is grain boundaries-the misalignment of crystalline orientations at grain boundaries, which is unavoidable for polycrystals, largely deteriorates critical current density. Here, we report that High critical temperature iron pnictide superconductors have advantages over cuprates with respect to these grain boundary issues. The transport properties through well-defined bicrystal grain boundary junctions with various misorientation angles (thetaGB) were systematically investigated for cobalt-doped BaFe2As2 (BaFe2As2:Co) epitaxial films fabricated on bicrystal substrates. The critical current density through bicrystal grain boundary (JcBGB) remained high (> 1 MA/cm2) and nearly constant up to a critical angle thetac of ~9o, which is substantially larger than the thetac of ~5o for YBCO. Even at thetaGB > thetac, the decay of JcBGB was much smaller than that of YBCO.

cond-mat.supr-con↗

arXiv2011

Biaxially textured cobalt-doped BaFe2As2 films with high critical current density over 1 MA/cm2 on MgO-buffered metal-tape flexible substrates

High critical current densities (Jc) > 1 MA/cm2 were realized in cobalt-doped BaFe2As2 (BaFe2As2:Co) films on flexible metal substrates with biaxially-textured MgO base-layers fabricated by an ion-beam assisted deposition technique. The BaFe2As2:Co films showed small in-plane crystalline misorientations (delta fai BaFe2As2:Co) of ~3o regardless of doubly larger misorientaions of the MgO base-layers (delta fai MgO = 7.3o), and exhibited high self-field Jc up to 3.5 MA/cm2 at 2 K. These values are comparable to that on MgO single crystals and the highest Jc among iron pnictide superconducting tapes and wires ever reported. High in-field Jc suggests the existence of c-axis correlated vortex pinning centers.

cond-mat.supr-con↗

arXiv2010

DC superconducting quantum interference devices fabricated using bicrystal grain boundary junctions in Co-doped BaFe2As2 epitaxial films

DC superconducting quantum interference devices (dc-SQUIDs) were fabricated in Co-doped BaFe2As2 epitaxial films on (La, Sr)(Al, Ta)O3 bicrystal substrates with 30deg misorientation angles. The 18 x 8 micro-meter^2 SQUID loop with an estimated inductance of 13 pH contained two 3 micro-meter wide grain boundary junctions. The voltage-flux characteristics clearly exhibited periodic modulations with deltaV = 1.4 micro-volt at 14 K, while the intrinsic flux noise of dc-SQUIDs was 7.8 x 10^-5 fai0/Hz^1/2 above 20 Hz. The rather high flux noise is mainly attributed to the small voltage modulation depth which results from the superconductor-normal metal-superconductor junction nature of the bicrystal grain boundary.

cond-mat.supr-con↗

arXiv2010

High Critical Current Density 4 MA/cm2 in Co-Doped BaFe2As2 Epitaxial Films Grown on (La, Sr)(Al, Ta)O3 Substrates without Buffer Layers

High critical current densities Jc of 4 MA/cm2 at 4 K were obtained in Co-doped BaFe2As2 (BaFe2As2:Co) epitaxial films grown directly on (La, Sr)(Al, Ta)O3 substrates by pulsed laser deposition. Use of a highly pure target and improvement of film homogeneity were the critical factors to achieve the high Jc. The improved BaFe2As2:Co epitaxial films contained almost no Fe impurity and showed high crystallinity (crystallite tilt angle delta omega = 0.5 deg and twist angle delta fai = 0.5 deg) and a sharp superconducting transition with a width of 1.1 K. It is considered that these improvements resulted in the enhanced superconducting properties comparable to those of single crystals.

cond-mat.supr-con↗

arXiv2010

Josephson junction in cobalt-doped BaFe2As2 epitaxial thin films on (La, Sr)(Al, Ta)O3 bicrystal substrates

Josephson junctions were fabricated in epitaxial films of cobalt-doped BaFe2As2 on [001]-tilt (La,Sr)(Al,Ta)O3 bicrystal substrates. 10m-wide microbridges spanning a 30-degrees-tilted bicrystal grain boundary (BGB bridge) exhibited resistively-shunted-junction (RSJ)-like current-voltage characteristics up to 17 K, and the critical current was suppressed remarkably by a magnetic field. Microbridges without a BGB did not show the RSJ-like behavior, and their critical current densities were 20 times larger than those of BGB bridges, confirming BGB bridges display a Josephson effect originating from weakly-linked BGB.

cond-mat.supr-con↗

arXiv2009

Two-Dimensional Spin Dynamics in the Itinerant Ferromagnet LaCoPO Revealed by Magnetization and $^{31}$P-NMR Measurements

We have performed magnetization and $^{31}$P-NMR measurements on the itinerant ferromagnet LaCoPO (Curie temperature $T_{\rm Curie}\sim 44$ K) with a layered structure in order to investigate spin dynamics in the paramagnetic state. The linear scaling between the Knight shift $K$ at the P site and the bulk susceptibility $χ$ above $T_{\rm Curie}$ indicates that the P nucleus is suitable for investigating magnetic properties. The temperature and magnetic field dependences of the nuclear spin-lattice relaxation rate divided by the temperature $1/T_1T$ at the P site show characteristic features of itinerant ferromagnets, such as ZrZn$_2$ and Y(Co$_{1-x}$Al$_x$)$_2$. In addition, the relationship between $1/T_1T$ and $χ$ above $T_{\rm Curie}$ suggests that ferromagnetic fluctuations possess a two-dimensional (2D) characteristic. The present data show that LaCoPO is a unique ferromagnet, where the 2D fluctuations anticipated from the crystal structure are predominant down to almost $T_{\rm Curie}$.

cond-mat.str-el↗

arXiv2009

Atomically-flat, chemically-stable, superconducting epitaxial thin film of iron-based superconductor, cobalt-doped BaFe$_2$As$_2$

Epitaxial growth of Fe-based superconductors such as Co-doped SrFe$_2$As$_2$ (SrFe$_2$As$_2$:Co) was reported recently, but has still insufficient properties for device application because they have rough surfaces and are decomposed by reactions with water vapor in an ambient atmosphere. This letter reports that epitaxial films of Co-doped BaFe$_2$As$_2$ grown at 700 oC show the onset superconducting transition tempearture of 20 K. The transition is sharper than those observed on the SrFe$_2$As$_2$:Co films, which would originate from their improved crystallinity. These films also have atomically-flat surfaces with steps-and-terraces structures and exhibit chemical stability against exposure to water vapor.

cond-mat.supr-con↗