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Tse-Ming Chen

Publications and source records attributed to Tse-Ming Chen.

10 recordsLinked to original sources

Electronic Reconstruction at the Quasicrystal-Moir\'e Crossover in Twisted Bilayer Graphene

Large twist angles in twisted bilayer graphene are widely expected to be electronically trivial, with negligible interlayer coupling and no electronic reconstruction, in contrast to the rich moir\'e-driven band reconstruction and correlated physics that emerge at small twist angles. Here, we show that this paradigm breaks down near a twist angle of 29{\deg}, where the system crosses over between quasicrystalline and commensurate order. Atomic-resolution transmission electron microscopy directly reveals the coexistence of near-dodecagonal quasicrystalline symmetry and emerging moir\'e periodicity, indicating an intermediate, nonperiodic structural regime. Magnetotransport measurements uncover strong interlayer hybridization mediated by Umklapp scattering, manifested by magneto-intersubband oscillations and a highly unconventional Landau-level spectrum. Remarkably, the Landau-level degeneracy evolves from 4- to 12-fold with increasing temperature, a behavior incompatible with two decoupled graphene monolayers. These findings establish large-angle twisted bilayer graphene as a platform where quasiperiodic symmetry fundamentally reshapes low-energy electronic states beyond the conventional moir\'e framework.

cond-mat.mes-hall

On-chip quantum sensing of Kondo spins in a high-mobility quasi-one-dimensional nanoconstriction

The precise nature of Kondo spins has remained enigmatic when extended to multiple spin impurities or, more intriguingly, when the localized spin itself may already be the consequence of many-body interactions in a presumably-delocalized open nanoconstriction, such as a quantum point contact (QPC). It is experimentally challenging to distinguish the Kondo state from other coexisting many-body spin states in such a strongly correlated system. Here we lithographically define an all-on-chip electronic resonator (ER) and a QPC in a high-mobility GaAs/AlGaAs heterostructure transistor. Local Kondo screening of the QPC spin and nonlocal spin singlet across the ER-QPC integration are controllable in response to ER occupancy parity. We also show that the 0.7 anomaly, another strongly-correlated state in QPCs, not only has a different physical origin but furthermore counteracts the Kondo spin singlet. These results demonstrate a noninvasive quantum method for sensing spontaneous magnetic impurities within an open nanoconstriction.

cond-mat.mes-hall

Detecting basis-dependent hardware errors through spatio-temporal quantum steering

Spatio-temporal quantum steering provides a framework for benchmarking the nonclassicality of general quantum state transfer processes. A central diagnostic is the no-signaling-in-time (NSIT) condition, whose violation can indicate basis-dependent hardware errors. However, finite measurement statistics may also yield apparent violations, thereby obscuring the detection of basis-dependent hardware errors. To address this, we construct a statistical hypothesis test under the null hypothesis that NSIT violations arise solely from statistical fluctuations. Combining the statistical properties of NSIT violation under the null hypothesis with Chebyshev's inequality, we obtain a distribution-free upper bound on the $p$-value without parametric assumptions. We apply this method to two examples. For a single-qubit state-transfer experiment on a superconducting processor, we observe several instances that the NSIT violation is observed and the null hypothesis is simultaneously rejected by a small $p$-value, providing statistical evidence of basis-dependent hardware errors. For a seven-qubit Hayden-Preskill teleportation protocol on IonQ devices, the null hypothesis is also rejected even when the average fidelity exceeds the classical threshold, while the associated nonclassicality measure vanishes. Our results highlight the necessity of statistical hypothesis testing for detecting basis-dependent errors in near-term quantum devices.

quant-ph

On-demand higher-harmonic generation through nonlinear Hall effects in curved nanomembranes

The high-order Hall effects, which go beyond the ordinary, unlock more possibilities of electronic transport properties and functionalities. Pioneer works focus on the manufacture of complex nanostructures with low lattice symmetry to produce them. In this paper, we theoretically show that such high-order Hall effects can alternatively be generated by curving a conducting nanomembrane which is highly tunable and also enables anisotropy. Its Hall response can be tuned from first to fourth order by simply varying the direction and magnitude of the applied magnetic field. The dominant Hall current frequency can also be altered from zero to double, or even four times that of the applied alternating electric field. This phenomenon is critically dependent on the occurrence of high-order snake orbits associated with the effective magnetic-field dipoles and quadruples induced by the curved geometry. Our results offer pathways for spatially engineering magnetotransport, current rectification, and frequency multiplication in the bent conducting nanomembrane.

cond-mat.mes-hall

Engineering the strain and interlayer excitons of 2D materials via lithographically engraved hexagonal boron nitride

Strain engineering has quickly emerged as a viable option to modify the electronic, optical and magnetic properties of 2D materials. However, it remains challenging to arbitrarily control the strain. Here we show that by creating atomically-flat surface nanostructures in hexagonal boron nitride, we achieve an arbitrary on-chip control of both the strain distribution and magnitude on high-quality molybdenum disulfide. The phonon and exciton emissions are shown to vary in accordance with our strain field designs, enabling us to write and draw any photoluminescence color image in a single chip. Moreover, our strain engineering offers a powerful means to significantly and controllably alter the strengths and energies of interlayer excitons at room temperature. This method can be easily extended to other material systems and offers a promise for functional excitonic devices.

cond-mat.mes-hall

Machine Learning-based Automatic Graphene Detection with Color Correction for Optical Microscope Images

Graphene serves critical application and research purposes in various fields. However, fabricating high-quality and large quantities of graphene is time-consuming and it requires heavy human resource labor costs. In this paper, we propose a Machine Learning-based Automatic Graphene Detection Method with Color Correction (MLA-GDCC), a reliable and autonomous graphene detection from microscopic images. The MLA-GDCC includes a white balance (WB) to correct the color imbalance on the images, a modified U-Net and a support vector machine (SVM) to segment the graphene flakes. Considering the color shifts of the images caused by different cameras, we apply WB correction to correct the imbalance of the color pixels. A modified U-Net model, a convolutional neural network (CNN) architecture for fast and precise image segmentation, is introduced to segment the graphene flakes from the background. In order to improve the pixel-level accuracy, we implement a SVM after the modified U-Net model to separate the monolayer and bilayer graphene flakes. The MLA-GDCC achieves flake-level detection rates of 87.09% for monolayer and 90.41% for bilayer graphene, and the pixel-level accuracy of 99.27% for monolayer and 98.92% for bilayer graphene. MLA-GDCC not only achieves high detection rates of the graphene flakes but also speeds up the latency for the graphene detection process from hours to seconds.

physics.app-ph

Zero-magnetic-field Hall effects in artificially corrugated bilayer graphene

The ability to engineer the electronic band structure and, more strikingly, to access new exotic phase of matter has been the cornerstone of the advance of science and technology. Twisting van der Waals materials to form moiré superlattice is a powerful paradigm and can drive graphene from a normal metallic state into an insulating, superconducting, or ferromagnetic states. Here, we present a new route to create non-trivial band structure and consequently an exotic phase of matter via lithographically patterned strain (lattice deformation). This method is used to realize an artificially corrugated bilayer graphene wherein the real-space and momentum-space pseudo-magnetic fields (Berry curvatures) coexist and have nontrivial properties, namely, the Berry curvature dipole. This new class of condensed-matter systems enables us to observe the so-called nonlinear anomalous Hall effect and a new type of Hall effect without breaking the time-reversal symmetry. Such artificial material system and our approach to unconventional electronic states may open an avenue of geometrical and/or topological quantum phenomena as well as that of band engineering in van der Waals crystals.

cond-mat.mes-hall

Imaging the zigzag Wigner crystal in confinement-tunable quantum wires

The existence of Wigner crystallization, one of the most significant hallmarks of strong electron correlations, has to date only been definitively observed in two-dimensional systems. In one-dimensional (1D) quantum wires Wigner crystals correspond to regularly spaced electrons; however, weakening the confinement and allowing the electrons to relax in a second dimension is predicted to lead to the formation of a new ground state constituting a zigzag chain with nontrivial spin phases and properties. Here we report the observation of such zigzag Wigner crystals by use of on-chip charge and spin detectors employing electron focusing to image the charge density distribution and probe their spin properties. This experiment demonstrates both the structural and spin phase diagrams of the 1D Wigner crystallization. The existence of zigzag spin chains and phases which can be electrically controlled in semiconductor systems may open avenues for experimental studies of Wigner crystals and their technological applications in spintronics and quantum information.

cond-mat.mes-hall

Controlled spatial separation of spins and coherent dynamics in spin-orbit-coupled nanostructures

The spatial separation of electron spins followed by the control of their individual spin dynamics has recently emerged as an essential ingredient in many proposals for spin-based technologies because it would enable both of the two spin species to be simultaneously utilized, distinct from most of the current spintronic studies and technologies wherein only one spin species could be handled at a time. Here we demonstrate that the spatial spin splitting of a coherent beam of electrons can be achieved and controlled using the interplay between an external magnetic field and Rashba spin-orbit interaction in semiconductor nanostructures. The technique of transverse magnetic focusing is used to detect this spin separation. More notably, our ability to engineer the spin-orbit interactions enables us to simultaneously manipulate and probe the coherent spin dynamics of both spin species and hence their correlation, which could open a route towards spintronics and spin-based quantum information processing.

cond-mat.mes-hall

All-electric all-semiconductor spin field effect transistors

The spin field effect transistor envisioned by Datta and Das opens a gateway to spin information processing. Although the coherent manipulation of electron spins in semiconductors is now possible, the realization of a functional spin field effect transistor for information processing has yet to be achieved, owing to several fundamental challenges such as the low spin-injection efficiency due to resistance mismatch, spin relaxation, and the spread of spin precession angles. Alternative spin transistor designs have therefore been proposed, but these differ from the field effect transistor concept and require the use of optical or magnetic elements, which pose difficulties for the incorporation into integrated circuits. Here, we present an all-electric and all-semiconductor spin field effect transistor, in which these obstacles are overcome by employing two quantum point contacts as spin injectors and detectors. Distinct engineering architectures of spin-orbit coupling are exploited for the quantum point contacts and the central semiconductor channel to achieve complete control of the electron spins -- spin injection, manipulation, and detection -- in a purely electrical manner. Such a device is compatible with large-scale integration and hold promise for future spintronic devices for information processing.

cond-mat.mes-hall