Searcharxiv⌕ Search

arXiv subjects

Tsutomu Nojima

Publications and source records attributed to Tsutomu Nojima.

20 records · Page 2Linked to original sources

Quenched metastable vortex states in Sr2RuO4

Sr2RuO4, a leading-candidate spin-triplet superconductor and a highly anisotropic quasi-two-dimensional type-II superconductor, provides unique opportunity to study unconventional as well as conventional vortex phases. To investigate its vortex-matter phases, we studied the ac susceptibility of Sr2RuO4 for fields parallel to the RuO2 plane by adapting two different thermal processes: In addition to the ordinary field sweep (FS) process, we newly employed the "each-point field cooling (EPFC)" process, in which the superconductivity is once thermally destroyed before collecting the data. We find that the ac susceptibility signal substantially changes with the EPFC process.This result indicates that we succeed in inducing new metastable vortex states by the EPFC process.We also find a new field scale H*1, below which the FS and EPFC processes provide the same value of the ac susceptibility. This new field scale suggests a liquid-like vortex state in the low-field region.

cond-mat.supr-con↗

Giant enhancement of spin detection sensitivity in (Ga,Mn)As/GaAs Esaki diodes

We investigate the correlation between spin signals measured in three-terminal (3T) geometry by the Hanle effect and the spin accumulation generated in a semiconductor channel in a lateral (Ga,Mn)As/GaAs Esaki diode device. We systematically compare measurements using a 3T configuration, probing spin accumulation directly beneath the injecting contact, with results from nonlocal measurements, where solely spin accumulation in the GaAs channel is probed. We find that the spin signal detected in the 3T configuration is dominated by a bias-dependent spin detection sensitivity, which in turn is strongly correlated with charge-transport properties of the junction. This results in a particularly strong enhancement of the detected spin signal in a region of increased differential resistance. We find additionally that two-step tunneling via localized states (LS) in the gap of (Ga,Mn)As does not compromise spin injection into the semiconductor conduction band.

cond-mat.mtrl-sci↗