arXiv subjects

V. A. Stephanovich

Publications and source records attributed to V. A. Stephanovich.

59 records · Page 4Linked to original sources

arXiv2000

Conversion of free magnetic polaron into vortex lattice in diluted magnetic semiconductors in quantizing magnetic fields

We show that in strong (quantizing) magnetic fields "ordinary" free magnetic polaron in diluted magnetic semiconductors (of type $A^2MeB^6$, where Me=Fe, Mn) exists in the form of vortex lattice quite similar to that in type II superconductors (Abricosov vortex lattice). The region of external parameters (like external magnetic field and temperature), where such lattice exists, is determined from the condition that lattice dimension is less or equal to polaron localization radius.

cond-mat.mtrl-sci↗

arXiv2000

Griffiths phase manifestation in disordered dielectrics

We predict the existence of Griffith phase in the dielectrics with concentrational crossover between dipole glass (electric analog of spin glass) and ferroelectricity. The peculiar representatives of above substances are $KTaO_3:Li$, $Nb$, $Na$ or relaxor ferroelectrics like $Pb_{1-x}La_xZr_{0.65}Ti_{0.35}O_3$. Since this phase exists above ferroelectric phase transition temperature (but below that temperature for ordered substance), we call it "para-glass phase". We assert that the difference between paraelectric and para-glass phase of above substances is the existence of clusters (inherent to "ordinary" Griffiths phase in Ising magnets) of correlated dipoles. We show that randomness play a decisive role in Griffiths (para-glass) phase formation; this phase does not exist in a mean field approximation.

cond-mat.dis-nn↗

arXiv2000

Static and dynamic properties of ferroelectric thin film multilayers

A thermodynamic theory of ferroelectric thin film multilayers is developed. The free energy function is written down using a multilayer model in which c-domain layers of one ferroelectric material alternate with a-domain layers of a second ferroelectric material. We assume that the interfaces are perfectly sharp and that the polarization at these boundaries is zero. The renormalization of the free energy coefficients due to the stresses in the films and to the depolarizing field was taken into account, as well as the renormalization of the coefficients of the polarization gradients. The equilibrium inhomogeneous polarization temperature and its thickness dependence were determined from the solutions of the Euler-Lagrange equations resulting from the minimization of the free energy functional. A thickness induced ferroelectric phase transition is shown to exist and its transition temperature and critical layer thickness depend on the domain orientation. The criteria for ''a/c'', ''c/c'' and ''a/a'' domain multilayering are calculated and expressed via coefficients of the free energy density and the layer thickness. The calculated multilayer susceptibility diverges at the transition temperature of the thickness induced ferroelectric phase. This divergence is shown to be the origin of the giant dielectric response observed in some multilayers. The theory gives an excellent fit to the temperature dependence of the giant susceptibility observed recently in multilayers of PbTiO$_{3}$-Pb$_{1-x}$La$_{x}$TiO$_{3}$ ($x=0.28$).

cond-mat.mtrl-sci↗

arXiv1999

Phase transitions in the antiferroelectric-ferroelectric mixed systems

Phase diagram of solid solutions of antiferroelectric and ferroelectric materials like PbZr$_{1-x}$Ti$_x$O$_3$ (PZT), Rb$_x$(NH$_4$)$_{1-x}$H$_2$PO$% _4$ (RADP) is calculated at the region $x\leq 0.1$. Antiferroelectric and ferroelectric order parameters (which correspond respectively to the difference and sum of two sublattices ions shifts) were introduced for antiferroelectric host lattice. Small admixture of ferroelectric component was considered as a random electric field source. The influence of this field on both aforementioned order parameters was calculated. Self consistent averaging with calculated random field distribution function made it possible to obtain the system of equations for order parameters of mixed system. The antiferroelectric $T_a$ and ferroelectric $T_c$ phase transition temperature concentrational dependence was expressed through the transition temperatures of the composition and members. The obtained $T_a(x)$ dependence was shown to fit pretty good the observed values for PZT and RADP. The application of the proposed theoretical approach to other types of mixed systems is discussed.

cond-mat.mtrl-sci↗

arXiv1999

On the physical mechanisms of relaxation time distribution in disordered dielectrics

The distribution function of relaxation times in disordered dielectrics has been calculated in the random field theory framework. For this purpose, we first consider the dynamics of single two-orientable impurity electric dipole in a random electric field $E$ created by the rest of impurities in disordered ferroelectric. This dynamics is conveniently described by Langevin equation. Relaxation time $τ$ is then a reciprocal probability (calculated on the base of Fokker-Planck equation) of the dipole transition through barrier in a double-well potential (corresponding to two possible dipole orientations), distorted by a random fields. The obtained dependence $τ(E)$ made it possible to obtain the expression for relaxation times distribution function $F(τ)$(via random fields distribution function $f(E)$. Latter function has been calculated self-consistently in the random field theory framework. Nonlinear random field contribution and effects of spatial correlations between impurities have also been taken into account. It was shown that nonlinear contribution of random field gives asymmetric shape of $F(τ)$, while in linear case it is symmetric. Comparison of calculated $F(τ)$ curves with those extracted from empirical Cole-Cole (CC), Davidson-Cole (DC), Kohlrausch-William-Watts (KWW) and Havriliak-Negami (HN) functions had shown, that they correspond to mixed ferro-glass phase with coexistence of short and long-range order. Different forms of $F(τ)$ are determined by linear (CC) or nonlinear (DC, KWW, HN) contributions of random field.

cond-mat.mtrl-sci↗