arXiv subjects

V. Cindro

Publications and source records attributed to V. Cindro.

At least 19 recordsLinked to original sources

arXiv2025

Irradiation Study Using QA Test Pieces of ATLAS18 ITk Strip Sensors with 80MeV Protons

The ATLAS experiment is planning a complete replacement of its inner detector(ID) with a new all-silicon inner tracker (ITk) for the ATLAS Inner Tracker Phase-2 upgrade. The ATLAS18 silicon strip sensors are designed to operate up to the integrated luminosity of 4000 fb$^{-1}$, which corresponds to the maximum fluence of $1.6 \times 10^{15} \, \text n_{\text{eq}} / \text{cm}^2$ (including safety factor). To enhance the quality assurance (QA) program to monitor the key properties of the sensors, the strip sensor community is considering to include China Spallation Neutron Source (CSNS) as a proton irradiation site and Institute of High Energy Physics (IHEP) as a QA test site. A total of 18 ATLAS18 ITk QA test pieces were irradiated with $6.0 \times 10^{14}$, $1.6 \times 10^{15}$, and $2.6 \times 10^{15} \, \text n_{\text{eq}} / \text{cm}^2$ protons at CSNS, and measured at IHEP, including IV (leakage current-voltage), CV (capacitance-voltage) and CCE (charge collection efficiency) measurements. The upgraded irradiation setup at CSNS and measurement setup at IHEP are shown in this paper. Irradiated samples were exchanged between IHEP, Ljubljana and Birmingham to cross-check CCE measurements.

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arXiv2024

Evolution of the electrical characteristics of the ATLAS18 ITk strip sensors with HL-LHC radiation exposure range

The objective of the study is to evaluate the evolution of the performance of the new ATLAS Inner-Tracker (ITk) strip sensors as a function of radiation exposure, to ensure the proper operation of the upgraded detector during the lifetime of the High-Luminosity Large Hadron Collider (HL-LHC). Full-size ATLAS ITk Barrel Short-Strip (SS) sensors with final layout design, ATLAS18SS, have been irradiated with neutrons and gammas, to confirm the results obtained with prototypes and miniature sensors during the development phase. The irradiations cover a wide range of fluences and doses that ITk will experience, going from 1e13 neq/cm2 and 0.49 Mrad, to 1.6e15 neq/cm2 and 80 Mrad. The split irradiation enables a proper combination of fluence and dose values of the HL-LHC, including a 1.5 safety factor. A complete electrical characterization of the key sensor parameters before and after irradiation is presented, studying the leakage current, bulk capacitance, single-strip and inter-strip characteristics. The results confirm the fulfilment of the ATLAS specifications throughout the whole experiment. The study of a wide range of fluences and doses also allows to obtain detailed results, such as the frequency dependence of the bulk capacitance measurements for highly irradiated sensors, or the evolution of the punch-through protection and inter-strip resistance with radiation.

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arXiv2023

Gain Recovery in Heavily Irradiated Low Gain Avalanche Detectors by High Temperature Annealing

Studies of annealing at temperatures up to 450$^\circ$C with LGADs irradiated with neutrons are described. It was found that the performance of LGADs irradiated with 1.5e15 n/cm$^2$ was already improved at 5 minutes of annealing at 250$^\circ$C. Isochronal annealing for 30 minutes in 50$^\circ$C steps between 300$^\circ$C and 450$^\circ$C showed that the largest beneficial effect of annealing is at around 350$^\circ$C. Another set of devices was annealed for 60 minutes at 350$^\circ$C and this annealing significantly increased V$_{\mathrm{gl}}$. The effect is equivalent to reducing the effective acceptor removal constant by a factor of $\sim$ 4. Increase of V$_{\mathrm{gl}}$ is the consequence of increased effective space charge in the gain layer caused by formation of electrically active defects or re-activation of interstitial Boron atoms.

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arXiv2022

Tuning of gain layer doping concentration and Carbon implantation effect on deep gain layer

Next generation Low Gain Avalanche Diodes (LGAD) produced by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before and after irradiation with ~1MeV neutrons at the JSI facility in Ljubljana. Sensors were irradiated to a maximum 1-MeV equivalent fluence of 2.5E15 Neq/cm2. The sensors analysed in this paper are an improvement after the lessons learned from previous FBK and HPK productions that were already reported in precedent papers. The gain layer of HPK sensors was fine-tuned to optimize the performance before and after irradiation. FBK sensors instead combined the benefit of Carbon infusion and deep gain layer to further the radiation hardness of the sensors and reduced the bulk thickness to enhance the timing resolution. The sensor performance was measured in charge collection studies using \b{eta}-particles from a 90Sr source and in capacitance-voltage scans (C-V) to determine the bias to deplete the gain layer. The collected charge and the timing resolution were measured as a function of bias voltage at -30C. Finally a correlation is shown between the bias voltage to deplete the gain layer and the bias voltage needed to reach a certain amount of gain in the sensor. HPK sensors showed a better performance before irradiation while maintaining the radiation hardness of the previous production. FBK sensors showed exceptional radiation hardness allowing a collected charge up to 10 fC and a time resolution of 40 ps at the maximum fluence.

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arXiv2021

Study of neutron irradiation effects in Depleted CMOS detector structures

In this paper results of Edge-TCT and I-V measurements with passive test structures made in LFoundry 150 nm HV-CMOS process on p-type substrates with different initial resistivities ranging from 0.5 to 3 k$\Omega$cm are presented. Samples were irradiated with reactor neutrons up to a fluence of 2$\cdot$10$^{15}$ n$_{\mathrm{eq}}$/cm$^2$. Depletion depth was measured with Edge-TCT. Effective space charge concentration $N_{\mathrm{eff}}$ was estimated from the dependence of depletion depth on bias voltage and studied as a function of neutron fluence. Dependence of $N_{\mathrm{eff}}$ on fluence changes with initial acceptor concentration in agreement with other measurements with p-type silicon. Long term accelerated annealing study of $N_{\mathrm{eff}}$ and detector current up to 1280 minutes at 60$^\circ$C was made. It was found that $N_{\mathrm{eff}}$ and current in reverse biased detector behaves as expected for irradiated silicon.

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arXiv2021

Inter-pad dead regions of irradiated FBK Low Gain Avalanche Detectors

Low Gain Avalanche Detectors (LGADs) are a type of thin silicon detector with a highly doped gain layer. LGADs manufactured by Fondazione Bruno Kessler (FBK) were tested before and after irradiation with neutrons. In this study, the Inter-pad distances (IPDs), defined as the width of the distances between pads, were measured with a TCT laser system. The response of the laser was tuned using $\beta$-particles from a 90Sr source. These insensitive "dead zones" are created by a protection structure to avoid breakdown, the Junction Termination Extension (JTE), which separates the pads. The effect of neutron radiation damage at \fluence{1.5}{15}, and \fluence{2.5}{15} on IPDs was studied. These distances are compared to the nominal distances given from the vendor, it was found that the higher fluence corresponds to a better matching of the nominal IPD.

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arXiv2021

Characterisation of analogue front end and time walk in CMOS active pixel sensor

In this work we investigated a method to determine time walk in an active silicon pixel sensor prototype using Edge-TCT with infrared laser charge injection. Samples were investigated before and after neutron irradiation to 5e14 neq/cm2. Threshold, noise and calibration of the analogue front end were determined with external charge injection. A spatially sensitive measurement of collected charge and time walk was carried out with Edge-TCT, showing a uniform charge collection and output delay in pixel centre. On pixel edges charge sharing was observed due to finite beam width resulting in smaller signals and larger output delay. Time walk below 25 ns was observed for charge above 2000 electrons at a threshold above the noise level. Time walk measurement with external charge injection yielded identical results.

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arXiv2021

Mapping the in-plane electric field inside irradiated diodes

A significant aspect of the Phase-II Upgrade of the ATLAS detector is the replacement of the current Inner Detector with the ATLAS Inner Tracker (ITk). The ATLAS ITk is an all-silicon detector consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker have been developed to withstand the high radiation environment in the ATLAS detector after the High Luminosity Upgrade of the Large Hadron Collider at CERN, which will significantly increase the rate of particle collisions and resulting particle tracks. During their operation in the ATLAS detector, sensors for the ITk strip tracker are expected to accumulate fluences up to 1.6 x 10^15 n_eq/cm^2 (including a safety factor of 1.5), which will significantly affect their performance. One characteristic of interest for highly irradiated sensors is the shape and homogeneity of the electric field inside its active area. For the results presented here, diodes with edge structures similar to full size ATLAS sensors were irradiated up to fluences comparable to those in the ATLAS ITk strip tracker and their electric fields mapped using a micro-focused X-ray beam (beam diameter 2x3 {\mu}m^2). This study shows the extension and shape of the electric field inside highly irradiated diodes over a range of applied bias voltages. Additionally, measurements of the outline of the depleted sensor areas allow a comparison of the measured leakage current for different fluences with expectations for the corresponding active areas.

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arXiv2020

Measurements with silicon detectors at extreme neutron fluences

Thin pad detectors made from 75 $\mu$m thick epitaxial silicon on low resistivity substrate were irradiated with reactor neutrons to fluences from 2.5$\times 10^{16}$ n/cm$^2$ to 1$\times 10^{17}$ n/cm$^2$. Edge-TCT measurements showed that the active detector thickness is limited to the epitaxial layer and does not extend into the low resistivity substrate even after the highest fluence. Detector current was measured under reverse and forward bias. The forward current was higher than the reverse at the same voltage but the difference gets smaller with increasing fluence. Rapid increase of current (breakdown) above ~ 700 V under reverse bias was observed. An annealing study at 60$^\circ$C was made to 1200 minutes of accumulated annealing time. It showed that the reverse current anneals with similar time constants as measured at lower fluences. A small increase of forward current due to annealing was seen. Collected charge was measured with electrons from $^{90}$Sr source in forward and reverse bias configurations. Under reverse bias the collected charge increased linearly with bias voltage up to 6000 electrons at 2.5$\times 10^{16}$ n/cm$^2$ and 3000 electrons at 1$\times 10^{17}$ n/cm$^2$. Rapid increase of noise was measured above $\sim$ 700 V reverse bias due to breakdown resulting in worse S/N ratio. At low bias voltages slightly more charge is measured under forward bias compared to reverse. However better S/N is achieved under reverse bias. Effective trapping times were estimated from charge collection measurements under forward bias showing that at high fluences they are much longer than values extrapolated from low fluence measurements - at 1$\times 10^{17}$ n/cm$^2$ a factor of 6 larger value was measured.

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arXiv2020

Beam test results of IHEP-NDL Low Gain Avalanche Detectors(LGAD)

To meet the timing resolution requirement of up-coming High Luminosity LHC (HL-LHC), a new detector based on the Low-Gain Avalanche Detector(LGAD), High-Granularity Timing Detector (HGTD), is under intensive research in ATLAS. Two types of IHEP-NDL LGADs(BV60 and BV170) for this update is being developed by Institute of High Energy Physics (IHEP) of Chinese Academic of Sciences (CAS) cooperated with Novel Device Laboratory (NDL) of Beijing Normal University and they are now under detailed study. These detectors are tested with $5GeV$ electron beam at DESY. A SiPM detector is chosen as a reference detector to get the timing resolution of LGADs. The fluctuation of time difference between LGAD and SiPM is extracted by fitting with a Gaussian function. Constant fraction discriminator (CFD) method is used to mitigate the effect of time walk. The timing resolution of $41 \pm 1 ps$ and $63 \pm 1 ps$ are obtained for BV60 and BV170 respectively.

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arXiv2020

Radiation Campaign of HPK Prototype LGAD sensors for the High-Granularity Timing Detector (HGTD)

We report on the results of a radiation campaign with neutrons and protons of Low Gain Avalanche Detectors (LGAD) produced by Hamamatsu (HPK) as prototypes for the High-Granularity Timing Detector (HGTD) in ATLAS. Sensors with an active thickness of 50~$\mu$m were irradiated in steps of roughly 2$\times$ up to a fluence of $3\times10^{15}~\mathrm{n_{eq}cm^{-2}}$. As a function of the fluence, the collected charge and time resolution of the irradiated sensors will be reported for operation at $-30^{\circ}$.

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arXiv2020

Effect of deep gain layer and Carbon infusion on LGAD radiation hardness

The properties of 50 um thick Low Gain Avalanche Diode (LGAD) detectors manufactured by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before and after irradiation with 1 MeV neutrons. Their performance were measured in charge collection studies using b-particles from a 90Sr source and in capacitance-voltage scans (C-V) to determine the bias to deplete the gain layer. Carbon infusion to the gain layer of the sensors was tested by FBK in the UFSD3 production. HPK instead produced LGADs with a very thin, highly doped and deep multiplication layer. The sensors were exposed to a neutron fluence from 4e14 neq/cm2 to 4e15 neq/cm2. The collected charge and the timing resolution were measured as a function of bias voltage at -30C, furthermore the profile of the capacitance over voltage of the sensors was measured.

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arXiv2020

Layout and Performance of HPK Prototype LGAD Sensors for the High-Granularity Timing Detector

The High-Granularity Timing Detector is a detector proposed for the ATLAS Phase II upgrade. The detector, based on the Low-Gain Avalanche Detector (LGAD) technology will cover the pseudo-rapidity region of $2.4<|\eta|<4.0$ with two end caps on each side and a total area of 6.4 $m^2$. The timing performance can be improved by implanting an internal gain layer that can produce signal with a fast rising edge, which improve significantly the signal-to-noise ratio. The required average timing resolution per track for a minimum-ionising particle is 30 ps at the start and 50 ps at the end of the HL-LHC operation. This is achieved with several layers of LGAD. The innermost region of the detector would accumulate a 1 MeV-neutron equivalent fluence up to $2.5 \times 10^{15} cm^{-2}$ before being replaced during the scheduled shutdowns. The addition of this new detector is expected to play an important role in the mitigation of high pile-up at the HL-LHC. The layout and performance of the various versions of LGAD prototypes produced by Hamamatsu (HPK) have been studied by the ATLAS Collaboration. The breakdown voltages, depletion voltages, inter-pad gaps, collected charge as well as the time resolution have been measured and the production yield of large size sensors has been evaluated.

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arXiv2020

Experimental Study of Acceptor Removal in UFSD

The performance of the Ultra-Fast Silicon Detectors (UFSD) after irradiation with neutrons and protons is compromised by the removal of acceptors in the thin layer below the junction responsible for the gain. This effect is tested both with C-V measurements of the doping concentration and with measurements of charge collection using charged particles. We find a perfect linear correlation between the bias voltage to deplete the gain layer determined with C-V and the bias voltage to collect a defined charge, measured with charge collection. An example for the usefulness of this correlation is presented.

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arXiv2019

Recent Results from Polycrystalline CVD Diamond Detectors

Diamond is a material in use at many nuclear and high energy facilities due to its inherent radiation tolerance and ease of use. We have characterized detectors based on chemical vapor deposition (CVD) diamond before and after proton irradiation. We present preliminary results of the spatial resolution of unirradiated and irradiated CVD diamond strip sensors. In addition, we measured the pulse height versus particle rate of unirradiated and irradiated polycrystalline CVD (pCVD) diamond pad detectors up to a particle flux of $20\,\mathrm{MHz/cm^2}$ and a fluence up to $4 \times 10^{15}\,n/\mathrm{cm^2}$.

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arXiv2019

Timing performance of small cell 3D silicon detectors

A silicon 3D detector with a single cell of 50x50 um2 was produced and evaluated for timing applications. The measurements of time resolution were performed for 90Sr electrons with dedicated electronics used also for determining time resolution of Low Gain Avalanche Detectors (LGADs). The measurements were compared to those with LGADs and also simulations. The studies showed that the dominant contribution to the timing resolution comes from the time walk originating from different induced current shapes for hits over the cell area. This contribution decreases with higher bias voltages, lower temperatures and smaller cell sizes. It is around 30 ps for a 3D detector of 50x50 um2 cell at 150 V and -20C, which is comparable to the time walk due to Landau fluctuations in LGADs. It even improves for inclined tracks and larger pads composed of multiple cells. A good agreement between measurements and simulations was obtained, thus validating the simulation results.

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arXiv2018

Proprieties of FBK UFSDs after neutron and proton irradiation up to 6*10e15 neq/cm2

The properties of 60-{\mu}m thick Ultra-Fast Silicon Detectors (UFSD) detectors manufactured by Fondazione Bruno Kessler (FBK), Trento (Italy) were tested before and after irradiation with minimum ionizing particles (MIPs) from a 90Sr \b{eta}-source . This FBK production, called UFSD2, has UFSDs with gain layer made of Boron, Boron low-diffusion, Gallium, Carbonated Boron and Carbonated. The irradiation with neutrons took place at the TRIGA reactor in Ljubljana, while the proton irradiation took place at CERN SPS. The sensors were exposed to a neutron fluence of 4*10e14, 8*1014, 1.5*10e15, 3*10e15, 6*10e15 neq/cm2 and to a proton fluence of 9.6*10e14 p/cm2, equivalent to a fluence of 6*10e14 neq/cm2. The internal gain and the timing resolution were measured as a function of bias voltage at -20C. The timing resolution was extracted from the time difference with a second calibrated UFSD in coincidence, using the constant fraction method for both.

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arXiv2018

Production and Integration of the ATLAS Insertable B-Layer

During the shutdown of the CERN Large Hadron Collider in 2013-2014, an additional pixel layer was installed between the existing Pixel detector of the ATLAS experiment and a new, smaller radius beam pipe. The motivation for this new pixel layer, the Insertable B-Layer (IBL), was to maintain or improve the robustness and performance of the ATLAS tracking system, given the higher instantaneous and integrated luminosities realised following the shutdown. Because of the extreme radiation and collision rate environment, several new radiation-tolerant sensor and electronic technologies were utilised for this layer. This paper reports on the IBL construction and integration prior to its operation in the ATLAS detector.

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