arXiv subjects

V. Da Costa

Publications and source records attributed to V. Da Costa.

6 recordsLinked to original sources

arXiv2026

A low-tech solution to process entire metal/molecule heterostructure stacks into vertical nanopillar electronic devices

Quantum technologies aim to assemble devices whose operation is controlled by the quantum state of individual atoms. Achieving this level of control in a practical, scalable design remains, however, a major obstacle to mass societal adoption. By working at the level of interatomic bonding, molecular engineering has enabled exquisite control over the electronic properties of individual atoms and their interactions with neighboring atoms. This positions molecular electronics as a potentially disruptive quantum technology, but serious technological challenges have prevented it from being included in technical road maps. The main obstacle is that conventional, mass scalable nanodevice technologies utilize resists and solvents that can degrade molecules. Some approaches involve exposing junction interfaces to contaminants (e.g. air, resist etc...), which can be particularly problematic for spintronics. In this technical paper, we present our decade-long work into building a nanotechnological chain that can process entire metal/molecule heterostructures into vertical nanopillars electronic devices. We discuss the advantages and pitfalls of the various iterations of this process that were implemented. We also discuss outlooks for this unique technology.

cond-mat.mes-hall↗

arXiv2019

Magnetoresistance and spintronic anisotropy induced by spin excitations along molecular spin chains

Electrically manipulating the quantum properties of nano-objects, such as atoms or molecules, is typically done using scanning tunnelling microscopes and lateral junctions. The resulting nanotransport path is well established in these model devices. Societal applications require transposing this knowledge to nano-objects embedded within vertical solid-state junctions, which can advantageously harness spintronics to address these quantum properties thanks to ferromagnetic electrodes and high-quality interfaces. The challenge here is to ascertain the device's effective, buried nanotransport path, and to electrically involve these nano-objects in this path by shrinking the device area from the macro- to the nano-scale while maintaining high structural/chemical quality across the heterostructure. We've developed a low-tech, resist- and solvent-free technological process that can craft nanopillar devices from entire in-situ grown heterostructures, and use it to study magnetotransport between two Fe and Co ferromagnetic electrodes across a functional magnetic CoPc molecular layer. We observe how spin-flip transport across CoPc molecular spin chains promotes a specific magnetoresistance effect, and alters the nanojunction's magnetism through spintronic anisotropy. In the process, we identify three magnetic units along the effective nanotransport path thanks to a macrospin model of magnetotransport. Our work elegantly connects the until now loosely associated concepts of spin-flip spectroscopy, magnetic exchange bias and magnetotransport due to molecular spin chains, within a solid-state device. We notably measure a 5.9meV energy threshold for magnetic decoupling between the Fe layer's buried atoms and those in contact with the CoPc layer forming the so-called 'spinterface'. This provides a first insight into the experimental energetics of this promising low-power information encoding unit.

cond-mat.mes-hall↗

arXiv2012

Light controlled magnetoresistance and magnetic field controlled photoresistance in CoFe film deposited on BiFeO3

We present a magnetoresistive-photoresistive device based on the interaction of a piezomagnetic CoFe thin film with a photostrictive BiFeO3 substrate that undergoes light-induced strain. The magnitude of the resistance and magnetoresistance in the CoFe film can be controlled by the wavelength of the incident light on the BiFeO3. Moreover, a light-induced decrease in anisotropic magnetoresistance is detected due to an additional magnetoelastic contribution to magnetic anisotropy of the CoFe film. This effect may find applications in photo-sensing systems, wavelength detectors and can possibly open a research development in light-controlled magnetic switching properties for next generation magnetoresistive memory devices.

cond-mat.mtrl-sci↗

arXiv2012

Photostriction in BiFeO3: wavelength dependence

In electrically polar solids optomechanical effects result from the combination of two main processes, electric field-induced strain and photon-induced voltages. Whereas the former depends on the electrostrictive ability of the sample to convert electric energy into mechanical energy, the latter is caused by the capacity of photons with appropriate energy to generate charges and, therefore, can depend on wavelength.We report here on mechanical deformation of BiFeO3 and its response time to discrete wavelengths of incident light ranging from 365 to 940 nm. The mechanical response of BiFeO3 is found to have two maxima in near-UV and green spectral wavelength regions.

cond-mat.mtrl-sci↗

arXiv2003

Broad distribution effects in sums of lognormal random variables

The lognormal distribution describing, e.g., exponentials of Gaussian random variables is one of the most common statistical distributions in physics. It can exhibit features of broad distributions that imply qualitative departure from the usual statistical scaling associated to narrow distributions. Approximate formulae are derived for the typical sums of lognormal random variables. The validity of these formulae is numerically checked and the physical consequences, e.g., for the current flowing through small tunnel junctions, are pointed out.

physics.data-an↗

arXiv2002

Statistical properties of currents flowing through tunnel junctions

This paper presents an overview of the statistical properties arising from the broadness of the distribution of tunnel currents in metal-insulator-metal tunnel junctions. Experimental current inhomogeneities can be modelled by a lognormal distribution and the size dependence of the tunnel current is modified at small sizes by the effect of broad distributions.

cond-mat.mtrl-sci↗