arXiv · 1207.0314
Light controlled magnetoresistance and magnetic field controlled photoresistance in CoFe film deposited on BiFeO3
Abstract
We present a magnetoresistive-photoresistive device based on the interaction of a piezomagnetic CoFe thin film with a photostrictive BiFeO3 substrate that undergoes light-induced strain. The magnitude of the resistance and magnetoresistance in the CoFe film can be controlled by the wavelength of the incident light on the BiFeO3. Moreover, a light-induced decrease in anisotropic magnetoresistance is detected due to an additional magnetoelastic contribution to magnetic anisotropy of the CoFe film. This effect may find applications in photo-sensing systems, wavelength detectors and can possibly open a research development in light-controlled magnetic switching properties for next generation magnetoresistive memory devices.
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B. Kundys, C. Meny, M. R. J. Gibbs, V. Da Costa, M. Viret, M. Acosta, D. Colson, B. Doudin. 2012-07-02. Light controlled magnetoresistance and magnetic field controlled photoresistance in CoFe film deposited on BiFeO3. https://doi.org/10.1063/1.4731201
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