arXiv subjects
Publications and source records attributed to V. Dobrosavljevic.
The temperature dependence of the electrical resistivity of two chemically substituted Ca-ruthenates is examined with the Efros-Shklovskii mechanism invoking Coulomb interactions between carriers. Additional mechanisms causing an energy dependence to the density of states at the Fermi surface may explain the unusually wide temperature and conductivity range obeyed by one system.
The zero-temperature magnetoconductivity of just-metallic Si:P scales with magnetic field, H, and dopant concentration, n, lying on a single universal curve. We note that Si:P, Si:B, and Si:As all have unusually large magnetic field crossover exponents near 2, and suggest that this anomalously weak response to a magnetic field is a common feature of uncompensated doped semiconductors.
We discuss the successes of the dynamical mean field (DMF) approach to metal insulator transitions in both the clean and the disordered limit. In the latter case, standard DMF equations are generalized in order to incorporate both the physics of strong correlation and Anderson localization effects. The results give new insights into the puzzling features of doped semiconductors.
We present a theory for disordered interacting electrons that can describe both the Mott and the Anderson transition in the respective limits of zero disorder and zero interaction. We use it to investigate the T=0 Mott-Anderson transition at a fixed electron density, as a the disorder strength is increased. Surprisingly, we find two critical values of disorder W_{nfl} and W_c. For W > W_{nfl}, the system enters a ``Griffiths'' phase, displaying metallic non-Fermi liquid behavior. At even stronger disorder, W=W_c > W_{nfl} the system undergoes a metal insulator transition, characterized by the linear vanishing of both the typical density of states and the typical quasiparticle weight.
We discuss the recently discovered two-dimensional metal-insulator transition in zero magnetic field in the light of the scaling theory of localization. We demonstrate that the observed symmetry relating conductivity and resistivity follows directly from the quantum critical behavior associated with such a transition. In addition, we show that very general scaling considerations imply that any disordered two dimensional metal is a perfect metal, but most likely not a Fermi liquid.
We present a general model of disorder in Kondo alloys that, under certain conditions, leads to non-Fermi liquid behavior. The central underlying idea is the presence of a distribution of local Kondo temperature scales. If this distribution is broad enough, such that there are sites with arbitrarily low Kondo temperatures, a non-Fermi liquid phase is formed. We analyze thermodynamics and transport in this approach and show it is consistent with a number of Kondo alloys. We also compare the predictions of this model with the measured dynamical magnetic response of these systems.
We demonstrate that a model of disordered Anderson lattices can account for many non-Fermi liquid features observed in a number of Kondo alloys. Due to the exponential nature of the Kondo temperature scale, even moderate disorder leads to a rather broad distribution of Kondo temperatures, inducing strong effective disorder seen by the conduction electrons. Spins with very small Kondo temperatures remain unquenched and dominate the low temperature properties. The model predicts logarithmic divergences in thermodynamic quantities at low temperatures. We also find a linear temperature dependence of the resistivity, a feature that remained a stumbling block in previous theoretical attempts. We argue that for realistic amounts of disorder, such marginal Fermi liquid behavior is a very robust feature of disordered Kondo alloys.